2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2Mb SYNCBURST™ SRAM MT58L128L18F, MT58L64L32F, MT58L64L36F; MT58L128V18F, MT58L64V32F, MT58L64V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply (VDD) • Separate +3.3V or +2.5V isolated output buffer supply (VDDQ) • SNOOZE MODE for reduced-power standby • Common data inputs and data outputs • Individual BYTE WRITE control and GLOBAL WRITE • Three chip enables for simple depth expansion and address pipelining • Clock-controlled and registered addresses, data I/Os and control signals • Internally self-timed WRITE cycle • Burst control pin (interleaved or linear burst) • Automatic power-down • 100-pin TQFP package • Low capacitive bus loading • x18, x32, and x36 versions available OPTIONS 100-Pin TQFP** **JEDEC-standard MS-026 BHA (LQFP). GENERAL DESCRIPTION The Micron® SyncBurst™ SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 2Mb SyncBurst SRAMs integrate a 128K x 18, 64K x 32, or 64K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input (CLK). The synchronous inputs include all addresses, all data inputs, active LOW chip enable (CE#), two additional chip enables for easy depth expansion (CE2, CE2#), burst control inputs (ADSC#, ADSP#, ADV#), byte write enables (BWx#) and global write (GW#). Asynchronous inputs include the output enable (OE#), snooze enable (ZZ) and clock (CLK). There is also a burst mode pin (MODE) that selects between interleaved and linear burst modes. The data-out (Q), enabled by OE#, is also asynchronous. WRITE cycles can be from one to two bytes wide (x18) or from one to four bytes wide (x32/x36), as controlled by the write control inputs. Burst operation can be initiated with either address status processor (ADSP#) or address status controller (ADSC#) input pins. Subsequent burst addresses can be internally generated as controlled by the burst advance pin (ADV#). MARKING • Timing (Access/Cycle/MHz) 6.8ns/8.0ns/125 MHz 7.5ns/8.8ns/113 MHz 8.5ns/10ns/100 MHz 10ns/15ns/66 MHz • Configurations 3.3V I/O 128K x 18 64K x 32 64K x 36 2.5V I/O 128K x 18 64K x 32 64K x 36 -6.8 -7.5 -8.5 -10 MT58L128L18F MT58L64L32F MT58L64L36F MT58L128V18F MT58L64V32F MT58L64V36F • Packages 100-pin TQFP T • Operating Temperature Range Commercial (0°C to +70°C) None Part Number Example: MT58L64L36FT-8.5 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM FUNCTIONAL BLOCK DIAGRAM 128K x 18 17 15 17 ADDRESS REGISTER SA0, SA1, SA 2 MODE SA0-SA1 SA1' BINARY Q1 COUNTER AND LOGIC CLR Q0 ADV# CLK 17 SA0' ADSC# ADSP# BYTE “b” WRITE REGISTER BWb# BYTE “a” WRITE DRIVER 9 BYTE “a” WRITE REGISTER BWa# BYTE “b” WRITE DRIVER 9 9 128K x 9 x 2 MEMORY ARRAY 18 OUTPUT BUFFERS SENSE 18 AMPS 18 9 DQs DQPa DQPb BWE# GW# INPUT REGISTERS 18 ENABLE REGISTER CE# CE2 CE2# 2 OE# FUNCTIONAL BLOCK DIAGRAM 64K x 32/36 16 ADDRESS REGISTER SA0, SA1, SA 16 14 16 SA0-SA1 MODE BINARY Q1 SA1' COUNTER AND LOGIC Q0 CLR SA0' ADV# CLK ADSC# ADSP# BWd# BYTE “d” WRITE REGISTER 9 BYTE “d” WRITE DRIVER 9 BWc# BYTE “c” WRITE REGISTER 9 BYTE “c” WRITE DRIVER 9 9 9 64K x 9 x 4 (x36) BWb# BYTE “b” WRITE REGISTER 9 BYTE “b” WRITE DRIVER BWa# BWE# BYTE “a” WRITE REGISTER 9 BYTE “a” WRITE DRIVER GW# CE# CE2 CE2# OE# 64K x 8 x 4 (x32) 36 SENSE AMPS 36 OUTPUT BUFFERS 36 MEMORY ARRAY DQs DQPa DQPb DQPc DQPd INPUT REGISTERS 36 ENABLE REGISTER 4 NOTE: Functional Block Diagrams illustrate simplified device operation. See truth table, pin descriptions and timing diagrams for detailed information. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM GENERAL DESCRIPTION (continued) Address and write control are registered on-chip to simplify WRITE cycles. This allows self-timed WRITE cycles. Individual byte enables allow individual bytes to be written. During WRITE cycles on the x18 device, BWa# controls DQa pins and DQPa; BWb# controls DQb pins and DQPb. During WRITE cycles on the x32 and x36 devices, BWa# controls DQa pins and DQPa; BWb# controls DQb pins and DQPb; BWc# controls DQc pins and DQPc; BWd# controls DQd pins and DQPd. GW# LOW causes all bytes to be written. Parity bits are only available on the x18 and x36 versions. Micron’s 2Mb SyncBurst SRAMs operate from a +3.3V VDD power supply, and all inputs and outputs are TTL-compatible. Users can choose either a 3.3V or 2.5V I/O version. The device is ideally suited for 486, Pentium®, 680X0, and PowerPC systems and systems that benefit from a very wide data bus. The device is also ideal in generic 16-, 18-, 32-, 36-, 64-, and 72-bit-wide applications. Please refer to Micron’s Web site (www.micronsemi.com/datasheets/syncds.html) for the latest data sheet. TQFP PIN ASSIGNMENT TABLE PIN # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 x18 NC NC NC x32/x36 NC/DQPc** DQc DQc VDDQ VSS NC DQc NC DQc DQb DQc DQb DQc VSS VDDQ DQb DQc DQb DQc VSS VDD NC VSS DQb DQd DQb DQd VDDQ VSS DQb DQd DQb DQd DQPb DQd NC DQd PIN # 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 x18 x32/x36 VSS VDDQ NC DQd NC DQd NC NC/DQPd** MODE SA SA SA SA SA1 SA0 DNU DNU VSS VDD DNU DNU SA SA SA SA SA SA NC/SA* PIN # 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 x18 NC NC NC x32/x36 NC/DQPa** DQa DQa VDDQ VSS NC DQa NC DQa DQa DQa VSS VDDQ DQa DQa ZZ VDD NC VSS DQa DQb DQa DQb VDDQ VSS DQa DQb DQa DQb DQPa DQb NC DQb PIN # 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 x18 NC NC SA NC NC x32/x36 VSS VDDQ DQb DQb NC/DQPb** SA SA ADV# ADSP# ADSC# OE# BWE# GW# CLK VSS VDD CE2# BWa# BWb# BWc# BWd# CE2 CE# SA SA *Pin 50 is reserved for address expansion. **No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM SA NC NC VDDQ VSS NC DQPa DQa DQa VSS VDDQ DQa DQa VSS NC VDD ZZ DQa DQa VDDQ VSS DQa DQa NC NC VSS VDDQ NC NC NC PIN ASSIGNMENT (Top View) 100-Pin TQFP 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 81 49 82 48 83 47 84 46 85 45 86 44 87 43 88 42 89 41 90 40 91 39 92 38 93 37 94 36 95 35 96 34 97 33 98 32 99 31 100 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 x18 NC/SA* SA SA SA SA SA SA DNU DNU VDD VSS DNU DNU SA0 SA1 SA SA SA SA MODE NC/DQPb** DQb DQb VDDQ VSS DQb DQb DQb DQb VSS VDDQ DQb DQb VSS NC VDD ZZ DQa DQa VDDQ VSS DQa DQa DQa DQa VSS VDDQ DQa DQa NC/DQPa** NC NC NC VDDQ VSS NC NC DQb DQb VSS VDDQ DQb DQb VSS VDD NC VSS DQb DQb VDDQ VSS DQb DQb DQPb NC VSS VDDQ NC NC NC SA SA ADV# ADSP# ADSC# OE# BWE# GW# CLK VSS VDD CE2# BWa# BWb# NC NC CE2 CE# SA SA 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 81 49 82 48 83 47 84 46 85 45 86 44 87 43 88 42 89 41 90 40 91 39 92 38 93 37 94 36 95 35 96 34 97 33 98 32 99 31 100 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 x32/x36 NC/SA* SA SA SA SA SA SA DNU DNU VDD VSS DNU DNU SA0 SA1 SA SA SA SA MODE NC/DQPc** DQc DQc VDDQ VSS DQc DQc DQc DQc VSS VDDQ DQc DQc VSS VDD NC VSS DQd DQd VDDQ VSS DQd DQd DQd DQd VSS VDDQ DQd DQd NC/DQPd** SA SA ADV# ADSP# ADSC# OE# BWE# GW# CLK VSS VDD CE2# BWa# BWb# BWc# BWd# CE2 CE# SA SA *Pin 50 is reserved for address expansion. **No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM TQFP PIN DESCRIPTIONS x18 x32/x36 SYMBOL TYPE SA0 SA1 SA Input Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the rising edge of CLK. 37 37 36 36 32-35, 44-49, 32-35, 44-49, 80-82, 99, 81, 82, 99, 100 100 DESCRIPTION 93 94 – – 93 94 95 96 BWa# BWb# BWc# BWd# Input Synchronous Byte Write Enables: These active LOW inputs allow individual bytes to be written and must meet the setup and hold times around the rising edge of CLK. A byte write enable is LOW for a WRITE cycle and HIGH for a READ cycle. For the x18 version, BWa# controls DQa pins and DQPa; BWb# controls DQb pins and DQPb. For the x32 and x36 versions, BWa# controls DQa pins and DQPa; BWb# controls DQb pins and DQPb; BWc# controls DQc pins and DQPc; BWd# controls DQd pins and DQPd. Parity is only available on the x18 and x36 versions. 87 87 BWE# Input Byte Write Enable: This active LOW input permits BYTE WRITE operations and must meet the setup and hold times around the rising edge of CLK. 88 88 GW# Input Global Write: This active LOW input allows a full 18-, 32-, or 36-bit WRITE to occur independent of the BWE# and BWx# lines and must meet the setup and hold times around the rising edge of CLK. 89 89 CLK Input Clock: This signal registers the address, data, chip enable, byte write enables and burst control inputs on its rising edge. All synchronous inputs must meet setup and hold times around the clock’s rising edge. 98 98 CE# Input Synchronous Chip Enable: This active LOW input is used to enable the device and conditions the internal use of ADSP#. CE# is sampled only when a new external address is loaded. 92 92 CE2# Input Synchronous Chip Enable: This active LOW input is used to enable the device and is sampled only when a new external address is loaded. 97 97 CE2 Input Synchronous Chip Enable: This active HIGH input is used to enable the device and is sampled only when a new external address is loaded. 86 86 OE# Input Output Enable: This active LOW, asynchronous input enables the data I/O output drivers. 83 83 ADV# Input Synchronous Address Advance: This active LOW input is used to advance the internal burst counter, controlling burst access after the external address is loaded. A HIGH on this pin effectively causes wait states to be generated (no address advance). To ensure use of correct address during a WRITE cycle, ADV# must be HIGH at the rising edge of the first clock after an ADSP# cycle is initiated. 84 84 ADSP# Input Synchronous Address Status Processor: This active LOW input interrupts any ongoing burst, causing a new external address to be registered. A READ is performed using the new address, independent of the byte write enables and ADSC#, but dependent upon CE#, CE2 and CE2#. ADSP# is ignored if CE# is HIGH. Powerdown state is entered if CE2 is LOW or CE2# is HIGH. (continued on next page) 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 5 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM TQFP PIN DESCRIPTIONS (continued) x18 x32/x36 SYMBOL TYPE DESCRIPTION 85 85 ADSC# Input Synchronous Address Status Controller: This active LOW input interrupts any ongoing burst, causing a new external address to be registered. A READ or WRITE is performed using the new address if CE# is LOW. ADSC# is also used to place the chip into power-down state when CE# is HIGH. 31 31 MODE Input Mode: This input selects the burst sequence. A LOW on this pin selects “linear burst.” NC or HIGH on this pin selects “interleaved burst.” Do not alter input state while device is operating. 64 64 ZZ Input Snooze Enable: This active HIGH, asynchronous input causes the device to enter a low-power standby mode in which all data in the memory array is retained. When ZZ is active, all other inputs are ignored. (a) 58, 59, (a) 52, 53, 62, 63, 68, 69, 56-59, 62, 63 72, 73 (b) 8, 9, 12, (b) 68, 69, 13, 18, 19, 22, 72-75, 78, 79 23 (c) 2, 3, 6-9, 12, 13 (d) 18, 19, 22-25, 28, 29 74 24 – – 51 80 1 30 DQa DQb Input/ SRAM Data I/Os: For the x18 version, Byte “a” is DQa pins; Byte “b” Output is DQb pins. For the x32 and x36 versions, Byte “a” is DQa pins; Byte “b” is DQb pins; Byte “c” is DQc pins; Byte “d” is DQd pins. Input data must meet setup and hold times around the rising edge of CLK. DQc DQd NC/DQPa NC/DQPb NC/DQPc NC/DQPd NC/ I/O No Connect/Parity Data I/Os: On the x32 version, these pins are No Connect (NC). On the x18 version, Byte “a” parity is DQPa; Byte “b” parity is DQPb. On the x36 version, Byte “a” parity is DQPa; Byte “b” parity is DQPb; Byte “c” parity is DQPc; Byte “d” parity is DQPd. 15, 41, 65, 91 15, 41, 65, 91 VDD Supply Power Supply: See DC Electrical Characteristics and Operating Conditions for range. 4, 11, 20, 27, 4, 11, 20, 27, 54, 61, 70, 77 54, 61, 70, 77 VDDQ 5, 10, 14, 17, 5, 10, 14, 17, 21, 26, 40, 55, 21, 26, 40, 55, 60, 67, 71, 76, 60, 67, 71, 76, 90 90 VSS 38, 39, 42, 43 38, 39, 42, 43 DNU – Do Not Use: These signals may either be unconnected or wired to GND to improve package heat dissipation. Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and Operating Conditions for range. Supply Ground: GND. 1-3, 6, 7, 16, 25, 28-30, 51-53, 56, 57, 66, 75, 78, 79, 95, 96 16, 66 NC – No Connect: These signals are not internally connected and may be connected to ground to improve package heat dissipation. 50 50 NC/SA – No Connect: This pin is reserved for address expansion. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 6 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH) FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL) FOURTH ADDRESS (INTERNAL) X...X00 X...X01 X...X10 X...X11 X...X01 X...X00 X...X11 X...X10 X...X10 X...X11 X...X00 X...X01 X...X11 X...X10 X...X01 X...X00 LINEAR BURST ADDRESS TABLE (MODE = LOW) FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL) FOURTH ADDRESS (INTERNAL) X...X00 X...X01 X...X10 X...X11 X...X01 X...X10 X...X11 X...X00 X...X10 X...X11 X...X00 X...X01 X...X11 X...X00 X...X01 X...X10 PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x18) FUNCTION GW# BWE# BWa# BWb# READ H H X X READ H L H H WRITE Byte “a” H L L H WRITE Byte “b” H L H L WRITE All Bytes H L L L WRITE All Bytes L X X X PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x32/x36) FUNCTION GW# BWE# BWa# BWb# BWc# BWd# READ H H X X X X READ H L H H H H WRITE Byte “a” H L L H H H WRITE All Bytes H L L L L L WRITE All Bytes L X X X X X NOTE: Using BWE# and BWa# through BWd#, any one or more bytes may be written. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 7 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM TRUTH TABLE OPERATION ADDRESS CE# CE2# CE2 USED Deselected Cycle, Power-Down None H X X Deselected Cycle, Power-Down None L X L Deselected Cycle, Power-Down None L H X ZZ ADSP# ADSC# ADV# WRITE# OE# CLK DQ L L L X L L L X X X X X X X X X X X L-H L-H L-H High-Z High-Z High-Z Deselected Cycle, Power-Down Deselected Cycle, Power-Down SNOOZE MODE, Power-Down READ Cycle, Begin Burst READ Cycle, Begin Burst None None None External External L L X L L X H X L L L X X H H L L H L L H H X L L L L X X X X X X X X X X X X X X X X L H L-H L-H X L-H L-H High-Z High-Z High-Z Q High-Z WRITE Cycle, Begin Burst READ Cycle, Begin Burst READ Cycle, Begin Burst READ Cycle, Continue Burst External External External Next L L L X L L L X H H H X L L L L H H H H L L L H X X X L L H H H X L H L L-H L-H L-H L-H D Q High-Z Q READ Cycle, Continue Burst READ Cycle, Continue Burst Next Next X H X X X X L L H X H H L L H H H L L-H L-H High-Z Q READ Cycle, Continue Burst WRITE Cycle, Continue Burst WRITE Cycle, Continue Burst Next Next Next H X H X X X X X X L L L X H X H H H L L L H L L H X X L-H L-H L-H High-Z D D READ Cycle, Suspend Burst READ Cycle, Suspend Burst Current Current X X X X X X L L H H H H H H H H L H L-H L-H Q High-Z READ Cycle, Suspend Burst READ Cycle, Suspend Burst WRITE Cycle, Suspend Burst WRITE Cycle, Suspend Burst Current Current Current Current H H X H X X X X X X X X L L L L X X H X H H H H H H H H H H L L L H X X L-H L-H L-H L-H Q High-Z D D NOTE: 1. X means “Don’t Care.” # means active LOW. H means logic HIGH. L means logic LOW. 2. For WRITE#, L means any one or more byte write enable signals (BWa#, BWb#, BWc#, or BWd#) and BWE# are LOW or GW# is LOW. WRITE# = H for all BWx#, BWE#, GW# HIGH. 3. BWa# enables WRITEs to DQa pins, DQPa. BWb# enables WRITEs to DQb pins, DQPb. BWc# enables WRITEs to DQc pins, DQPc. BWd# enables WRITEs to DQd pins, DQPd. DQPa and DQPb are only available on the x18 and x36 versions. DQPc and DQPd are only available on the x36 version. 4. All inputs except OE# and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK. 5. Wait states are inserted by suspending burst. 6. For a WRITE operation following a READ operation, OE# must be HIGH before the input data setup time and held HIGH throughout the input data hold time. 7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up. 8. ADSP# LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write enable signals and BWE# LOW or GW# LOW for the subsequent L-H edge of CLK. Refer to WRITE timing diagram for clarification. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM ABSOLUTE MAXIMUM RATINGS* *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Maximum junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See Micron Technical Note TN-05-14 for more information. Voltage on VDD Supply Relative to VSS .................................... -0.5V to +4.6V Voltage on VDDQ Supply Relative to VSS .................................... -0.5V to +4.6V VIN ............................................... -0.5V to VDDQ + 0.5V Storage Temperature (plastic) ............ -55°C to +150°C Junction Temperature** .................................... +150°C Short Circuit Output Current ........................... 100mA 3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (0°C ≤ TA ≤ +70°C; VDD, VDDQ = +3.3V +0.3V/-0.165V unless otherwise noted) DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Supply Voltage Isolated Output Buffer Supply CONDITIONS SYMBOL VIH VIL MIN 2.0 -0.3 MAX VDD + 0.3 0.8 UNITS V V NOTES 1, 2 1, 2 0V ≤ VIN ≤ VDD Output(s) disabled, 0V ≤ VIN ≤ VDD IOH = -4.0mA ILI ILO -1.0 -1.0 1.0 1.0 µA µA 3 VOH 2.4 – V 1, 4 VOL VDD VDDQ – 3.135 3.135 0.4 3.6 VDD V V V 1, 4 1 1, 5 IOL = 8.0mA 2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (0°C ≤ TA ≤ +70°C; VDD = +3.3V +0.3V/-0.165V; VDDQ = +2.5V +0.4V/-0.125V unless otherwise noted) DESCRIPTION Input High (Logic 1) Voltage CONDITIONS SYMBOL MIN MAX UNITS NOTES Data bus (DQx) Inputs VIHQ VIH 1.7 1.7 VDDQ + 0.3 VDD + 0.3 V V 1, 2 1, 2 Input Low (Logic 0) Voltage VIL -0.3 0.7 V 1, 2 0V ≤ VIN ≤ VDD ILI -1.0 1.0 µA 3 Output(s) disabled, 0V ≤ VIN ≤ VDDQ (DQx) ILO -1.0 1.0 µA Output High Voltage IOH = -2.0mA IOH = -1.0mA VOH VOH 1.7 2.0 – – V V 1, 4 1, 4 Output Low Voltage IOL = 2.0mA IOL = 1.0mA VOL VOL – – 0.7 0.4 V V 1, 4 1, 4 VDD 3.135 3.6 V 1 VDDQ 2.375 2.9 V 1 Input Leakage Current Output Leakage Current Supply Voltage Isolated Output Buffer Supply NOTE: 1. All voltages referenced to VSS (GND). 2. Overshoot: VIH ≤ +4.6V for t ≤ tKC/2 for I ≤ 20mA Undershoot: VIL ≥ -0.7V for t ≤ tKC/2 for I ≤ 20mA Power-up: VIH ≤ +3.6V and VDD ≤ 3.135V for t ≤ 200ms 3. MODE pin has an internal pull-up, and input leakage = ±10µA. 4. The load used for VOH, VOL testing is shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O. AC load current is higher than the stated DC values. AC I/O curves are available upon request. 5. VDDQ should never exceed VDD. VDD and VDDQ can be connected together for 3.3V I/O. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM IDD OPERATING CONDITIONS AND MAXIMUM LIMITS (Note: 1) (0°C ≤ TA ≤ +70°C; VDD = +3.3V +0.3V/-0.165V unless otherwise noted) MAX DESCRIPTION CONDITIONS Power Supply Device selected; All inputs ≤ VIL or ≥ VIH; Current: Operating Cycle time ≥ tKC (MIN); VDD = MAX; Outputs open SYM TYP -6.8 -7.5 -8.5 -10 UNITS NOTES IDD 65 265 245 225 150 mA 2, 3, 4 IDD1 20 70 65 65 50 mA 2, 3, 4 Power Supply Current: Idle Device selected; VDD = MAX; ADSC#, ADSP#, ADV#, GW#, BWx# ≥ VIH; All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2; Cycle time ≥ tKC (MIN); Outputs open CMOS Standby Device deselected; VDD = MAX; All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2; All inputs static; CLK frequency = 0 ISB2 0.5 10 10 10 10 mA 3, 4 Device deselected; VDD = MAX; All inputs ≤ VIL or ≥ VIH; All inputs static; CLK frequency = 0 ISB3 6 25 25 25 25 mA 3, 4 ISB4 20 70 65 65 50 mA 3, 4 TTL Standby Clock Running Device deselected; VDD = MAX; ADSC#, ADSP#, ADV#, GW#, BWx# ≥ VIH; All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2; Cycle time ≥ tKC (MIN) NOTE: 1. VDDQ = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; VDDQ = +2.5V +0.4V/-0.125V for 2.5V I/O configuration. 2. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and greater output loading. 3. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means device is active (not in power-down mode). 4. Typical values are measured at 3.3V, 25°C and 15ns cycle time. 5. VDDQ = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; VDDQ = +2.5V +0.4V/-0.125V for 2.5V I/O configuration. 6. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and greater output loading. 7. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means device is active (not in power-down mode). 8. Typical values are measured at 3.3V, 25°C, and 15ns cycle time. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM TQFP CAPACITANCE DESCRIPTION Control Input Capacitance CONDITIONS SYMBOL TYP MAX UNITS NOTES TA = 25°C; f = 1 MHz; CI 2.7 3.5 pF 1 VDD = 3.3V CO 4 5 pF 1 Address Capacitance CA 2.5 3.5 pF 1 Clock Capacitance C CK 2.5 3.5 pF 1 Input/Output Capacitance (DQ) TQFP THERMAL RESISTANCE DESCRIPTION Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Top of Case) CONDITIONS SYMBOL TYP UNITS NOTES Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. θJA 40 °C/W 1 θJC 8 °C/W 1 NOTE: 1. This parameter is sampled. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 11 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 1) (0°C ≤ TA ≤ +70°C; VDD = +3.3V +0.3V/-0.165V) DESCRIPTION Clock Clock cycle time Clock frequency Clock HIGH time Clock LOW time Output Times Clock to output valid Clock to output invalid Clock to output in Low-Z Clock to output in High-Z OE# to output valid OE# to output in Low-Z OE# to output in High-Z Setup Times Address Address status (ADSC#, ADSP#) Address advance (ADV#) Byte write enables (BWa#-BWd#, GW#, BWE#) Data-in Chip enable (CE#) Hold Times Address Address status (ADSC#, ADSP#) Address advance (ADV#) Byte write enables (BWa#-BWd#, GW#, BWE#) Data-in Chip enable (CE#) SYMBOL tKC -6.8 MIN MAX 8.0 fKF tKH tKL tKQLZ 1.8 1.8 6.8 0 tOEHZ tAS tADSS tAAS tWS tDS tCES tAH tADSH tAAH tWH tDH tCEH 10.0 7.5 15 0 66 4.0 4.0 8.5 3.0 1.5 4.2 4.2 3.8 -10 MIN MAX UNITS NOTES 100 1.9 1.9 1.5 1.5 3.8 3.8 tOEQ -8.5 MIN MAX 113 1.9 1.9 1.5 1.5 tKQHZ tOELZ 8.8 125 tKQ tKQX -7.5 MIN MAX 10.0 3.0 1.5 5.0 5.0 0 4.2 5.0 5.0 0 5.0 5.0 ns MHz ns ns 2 2 ns ns ns ns ns ns ns 3 3, 4, 5, 6 3, 4, 5, 6 7 3, 4, 5, 6 3, 4, 5, 6 1.8 1.8 1.8 1.8 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.5 2.5 2.5 2.5 ns ns ns ns 8, 9 8, 9 8, 9 8, 9 1.8 1.8 2.0 2.0 2.0 2.0 2.5 2.5 ns ns 8, 9 8, 9 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns ns ns 8, 9 8, 9 8, 9 8, 9 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns 8, 9 8, 9 NOTE: 1. Test conditions as specified with the output loading shown in Figure 1 for 3.3V I/O (VDDQ = +3.3V +0.3V/-0.165V) and Figure 3 for 2.5V I/O (VDDQ = +2.5V +0.4V/-0.125V). 2. Measured as HIGH above VIH and LOW below VIL. 3. This parameter is measured with the output loading shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O. 4. This parameter is sampled. 5. Transition is measured ±500mV from steady state voltage. 6. Refer to Technical Note TN-58-09, “Synchronous SRAM Bus Contention Design Considerations,” for a more thorough discussion on these parameters. 7. OE# is a “Don’t Care” when a byte write enable is sampled LOW. 8. A READ cycle is defined by byte write enables all HIGH or ADSP# LOW for the required setup and hold times. A WRITE cycle is defined by at least one byte write enable LOW and ADSP# HIGH for the required setup and hold times. 9. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK when either ADSP# or ADSC# is LOW and chip enabled. All other synchronous inputs must meet the setup and hold times with stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at each rising edge of CLK when either ADSP# or ADSC# is LOW to remain enabled. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 12 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 3.3V I/O AC TEST CONDITIONS 2.5V I/O AC TEST CONDITIONS Input pulse levels ................. VIH = (VDD/2.2) + 1.5V Input pulse levels ............. VIH = (VDD/2.64) + 1.25V .................... VIL = (VDD/2.2) - 1.5V ................ VIL = (VDD/2.64) - 1.25V Input rise and fall times ..................................... 1ns Input rise and fall times ..................................... 1ns Input timing reference levels ..................... VDD/2.2 Input timing reference levels ................... VDD/2.64 Output reference levels ............................ VDDQ/2.2 Output reference levels ............................... VDDQ/2 Output load ............................. See Figures 1 and 2 Output load ............................. See Figures 3 and 4 3.3V I/O Output Load Equivalents 2.5V I/O Output Load Equivalents Q Q Z O= 50 Z O= 50Ω 50 50Ω VT = 1.25V VT = 1.5V Figure 3 Figure 1 +2.5V +3.3V 225Ω 317 Q Q 5pF 351 5pF 225Ω Figure 2 Figure 4 LOAD DERATING CURVES The Micron 128K x 18, 64K x 32, and 64K x 36 SyncBurst SRAM timing is dependent upon the capacitive loading on the outputs. Consult the factory for copies of I/O current versus voltage curves. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 13 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM SNOOZE MODE The ZZ pin is an asynchronous, active HIGH input that causes the device to enter SNOOZE MODE. When the ZZ pin becomes a logic HIGH, ISB2Z is guaranteed after the setup time tZZ is met. Any access pending when the device enters SNOOZE MODE is not guaranteed to complete successfully. Therefore, SNOOZE MODE must not be initiated until valid pending operations are completed. SNOOZE MODE is a low-current, “power-down” mode in which the device is deselected and current is reduced to ISB2Z. The duration of SNOOZE MODE is dictated by the length of time the ZZ pin is in a HIGH state. After the device enters SNOOZE MODE, all inputs except ZZ become gated inputs and are ignored. SNOOZE MODE ELECTRICAL CHARACTERISTICS DESCRIPTION Current during SNOOZE MODE CONDITIONS SYMBOL MAX UNITS ZZ ≥ VIH ISB2Z 10 mA tZZ tKC ns 1 ns 1 ZZ active to input ignored ZZ inactive to input sampled tRZZ ZZ active to snooze current tZZI tRZZI ZZ inactive to exit snooze current MIN tKC tKC 0 NOTES ns 1 ns 1 NOTE: 1. This parameter is sampled. SNOOZE MODE WAVEFORM CLK t ZZ ZZ I t RZZ t ZZI SUPPLY I ISB2Z t RZZI ALL INPUTS DESELECT or READ Only (except ZZ) Outputs (Q) High-Z DON’T CARE 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 14 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM READ TIMING tKC CLK tKL tKH tADSS tADSH ADSP# tADSS tADSH ADSC# tAS Deselect Cycle (Note 4) tAH A1 ADDRESS A2 tWS tWH BWE#, GW#, BWa#-BWd# tCES tCEH CE# (NOTE 2) tAAS tAAH ADV# ADV# suspends burst. OE# t OEQ t OEHZ tKQ t OELZ t KQLZ Q Q(A2) Q(A1) High-Z t KQHZ tKQX Q(A2 + 1) Q(A2 + 2) Q(A2 + 3) Q(A2) Q(A2 + 1) Q(A2 + 2) t KQ Burst wraps around to its initial state. (NOTE 1) Single READ BURST READ DONÕT CARE UNDEFINED READ TIMING PARAMETERS SYMBOL tKC -6.8 -7.5 -8.5 -10 MIN MAX MIN MAX MIN MAX MIN MAX UNITS 8.0 8.8 10.0 15 ns fKF 125 113 100 66 tKH 1.8 1.9 1.9 4.0 tKL 1.8 1.9 1.9 4.0 tKQ 6.8 7.5 8.5 10.0 tKQX 1.5 1.5 3.0 3.0 tKQLZ 1.5 1.5 1.5 1.5 tKQHZ 3.8 tOEQ tOELZ tOEHZ 4.2 3.8 0 4.2 0 3.8 5.0 5.0 5.0 0 4.2 5.0 0 5.0 5.0 SYMBOL MHz ns -6.8 -7.5 -8.5 -10 MIN MAX MIN MAX MIN MAX MIN MAX UNITS tAS 1.8 2.0 2.0 2.5 ns tADSS 1.8 1.8 1.8 2.0 2.0 2.0 2.0 2.0 2.0 2.5 2.5 2.5 ns ns ns 1.8 0.5 2.0 0.5 2.0 0.5 2.5 0.5 ns ns 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns ns 0.5 0.5 0.5 ns tAAS ns ns ns tWS ns ns tADSH ns ns ns tWH 0.5 0.5 0.5 tCEH 0.5 tCES tAH tAAH NOTE: 1. Q(A2) refers to output from address A2. Q(A2 + 1) refers to output from the next internal burst address following A2. 2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE# is HIGH, CE2# is HIGH and CE2 is LOW. 3. Timing is shown assuming that the device was not enabled before entering into this sequence. 4. Outputs are disabled tKQHZ after deselect. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM WRITE TIMING tKC CLK tKH tKL tADSS tADSH ADSP# ADSC# extends burst. tADSS tADSH tADSS tADSH ADSC# tAS tAH A1 ADDRESS A2 A3 BYTE WRITE signals are ignored when ADSP# is LOW. tWS tWH BWE#, BWa#-BWd# (NOTE 5) tWS tWH GW# tCES tCEH CE# (NOTE 2) tAAS tAAH ADV# ADV# suspends burst. (NOTE 4) OE# (NOTE 3) tDS D tDH D(A2) D(A1) High-Z D(A2 + 1) D(A2 + 1) D(A2 + 2) D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2) tOEHZ (NOTE 1) Q BURST READ Single WRITE BURST WRITE Extended BURST WRITE DONÕT CARE UNDEFINED WRITE TIMING PARAMETERS -6.8 SYMBOL tKC fKF tKH tKL -7.5 -8.5 -10 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX UNITS 8.0 8.8 10.0 15 ns 125 1.8 1.8 tOEHZ 113 1.9 1.9 100 1.9 1.9 66 4.0 4.0 MHz ns ns tDS 1.8 2.0 2.0 2.5 ns tCES 1.8 0.5 0.5 2.0 0.5 0.5 2.0 0.5 0.5 2.5 0.5 0.5 ns ns ns 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns tAH tADSH 1.8 2.0 2.0 2.5 ns ns tAAH tAS tADSS 1.8 1.8 1.8 2.0 2.0 2.0 2.0 2.0 2.0 2.5 2.5 2.5 ns ns ns tDH tAAS tWS 3.8 4.2 5.0 5.0 -6.8 -7.5 -8.5 -10 MIN MAX MIN MAX MIN MAX MIN MAX UNITS tWH tCEH NOTE: 1. D(A2) refers to input for address A2. D(A2 + 1) refers to input for the next internal burst address following A2. 2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE# is HIGH, CE2# is HIGH and CE2 is LOW. 3. OE# must be HIGH before the input data setup and held HIGH throughout the data hold time. This prevents input/ output data contention for the time period prior to the byte write enable inputs being sampled. 4. ADV# must be HIGH to permit a WRITE to the loaded address. 5. Full-width WRITE can be initiated by GW# LOW; or GW# HIGH and BWE#, BWa# and BWb# LOW for the x18 version; or GW# HIGH and BWE#, BWa#-BWd# LOW for the x32 and x36 versions. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 16 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM READ/WRITE TIMING tKC CLK tKH tADSS tKL tADSH ADSP# ADSC# tAS A1 ADDRESS tAH A2 A3 A4 tWS BWE#, BWa#-BWd# (NOTE 4) tCES A5 A6 D(A5) D(A6) tWH tCEH CE# (NOTE 2) ADV# OE# tDS D High-Z Q tDH tOELZ D(A3) tOEHZ tKQ Q(A2) Q(A1) (NOTE 1) Q(A4) Back-to-Back READs Single WRITE Q(A4+1) Q(A4+2) Q(A4+3) Back-to-Back WRITEs BURST READ DONÕT CARE UNDEFINED READ/WRITE TIMING PARAMETERS SYMBOL tKC fKF tKH tKL 1.8 1.8 tKQ tOELZ tADSS 1.9 1.9 6.8 0 tOEHZ tAS -6.8 -6.8 -7.5 -8.5 -10 MIN MAX MIN MAX MIN MAX MIN MAX UNITS 8.0 8.8 10.0 15 ns 125 113 100 66 MHz 7.5 0 3.8 1.8 1.8 1.9 1.9 8.5 0 4.2 2.0 2.0 4.0 4.0 10.0 0 5.0 2.0 2.0 5.0 2.5 2.5 SYMBOL tWS tDS ns ns tCES ns ns ns tADSH ns ns tCEH tAH tWH tDH -7.5 -8.5 -10 MIN MAX MIN MAX MIN MAX MIN MAX UNITS 1.8 2.0 2.0 2.5 ns 1.8 1.8 0.5 2.0 2.0 0.5 2.0 2.0 0.5 2.5 2.5 0.5 ns ns ns 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns NOTE: 1. Q(A4) refers to output from address A4. Q(A4 + 1) refers to output from the next internal burst address following A4. 2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE# is HIGH, CE2# is HIGH and CE2 is LOW. 3. The data bus (Q) remains in High-Z following a WRITE cycle unless an ADSP#, ADSC# or ADV# cycle is performed. 4. GW# is HIGH. 5. Back-to-back READs may be controlled by either ADSP# or ADSC#. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 17 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 100-PIN PLASTIC TQFP (JEDEC LQFP) PIN #1 ID 22.10 +0.10 -0.15 0.15 +0.03 -0.02 0.32 +0.06 -0.10 0.65 20.10 ±0.10 DETAIL A 0.62 1.50 ±0.10 0.10 14.00 ±0.10 16.00 +0.20 -0.05 0.25 0.10 +0.10 -0.05 GAGE PLANE 1.00 (TYP) 0.60 ±0.15 1.40 ±0.05 DETAIL A NOTE: 1. All dimensions in millimeters MAX or typical here noted. MIN 2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: [email protected], Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron and SyncBurst are registered trademarks of Micron Technology, Inc. Pentium is a registered trademark of Intel Corporation. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 18 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM REVISION HISTORY Removed 165-pin FBGA package, Rev. 6/01 .................................................................................................. June/7/01 Removed FBGA Part Marking Guide, REV 8/00, FINAL ........................................................................ August/22/00 Changed FBGA capacitance values, REV 8/00, FINAL ............................................................................. August/7/00 CI; TYP 2.5pF from 4pF; MAX. 3.5pF from 5pF CO; TYP 4pF from 6pF; MAX. 5pF from 7pF CCK; TYP 2.5pF from 5pF; MAX. 3.5pF from 6pF Removed IT References, REV 7/00, FINAL ..................................................................................................... July/10/00 Added FBGA Part Marking Guide Added Revision History to Datasheet Removed IT from Part Number Example, REV 6/00, FINAL ....................................................................... June/21/00 Added # of datalines to the databus in x32/36 Block Diagram Changed tKQLZ from 4.0ns MIN to 1.5ns MIN Added Note - “Preliminary Package Data” to FBGA Capacitance and Thermal Resistance Tables Changed heading on Mechanical Drawing from BGA to FBGA Added 165-Pin FBGA package, REV 3/00, FINAL ....................................................................................... May/23/00 Added PRELIMINARY PACKAGE DATA to diagram 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 6/01 19 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM WRITE TIMING tKC CLK tKH tKL tADSS tADSH ADSP# ADSC# extends burst. tADSS tADSH tADSS tADSH ADSC# tAS tAH A1 ADDRESS A2 A3 BYTE WRITE signals are ignored when ADSP# is LOW. tWS tWH BWE#, BWa#-BWd# (NOTE 5) tWS tWH GW# tCES tCEH CE# (NOTE 2) tAAS tAAH ADV# ADV# suspends burst. (NOTE 4) OE# (NOTE 3) tDS D tDH D(A2) D(A1) High-Z D(A2 + 1) D(A2 + 1) D(A2 + 2) D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2) tOEHZ (NOTE 1) Q BURST READ Single WRITE BURST WRITE Extended BURST WRITE DONÕT CARE UNDEFINED WRITE TIMING PARAMETERS -6.8 SYMBOL tKC fKF tKH tKL -7.5 -8.5 -10 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX UNITS 8.0 8.8 10.0 15 ns 125 1.8 1.8 tOEHZ 113 1.9 1.9 100 1.9 1.9 66 4.0 4.0 MHz ns ns tDS 1.8 2.0 2.0 2.5 ns tCES 1.8 0.5 0.5 2.0 0.5 0.5 2.0 0.5 0.5 2.5 0.5 0.5 ns ns ns 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns tAH tADSH 1.8 2.0 2.0 2.5 ns ns tAAH tAS tADSS 1.8 1.8 1.8 2.0 2.0 2.0 2.0 2.0 2.0 2.5 2.5 2.5 ns ns ns tDH tAAS tWS 3.8 4.2 5.0 5.0 -6.8 -7.5 -8.5 -10 MIN MAX MIN MAX MIN MAX MIN MAX UNITS tWH tCEH NOTE: 1. D(A2) refers to input for address A2. D(A2 + 1) refers to input for the next internal burst address following A2. 2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE# is HIGH, CE2# is HIGH and CE2 is LOW. 3. OE# must be HIGH before the input data setup and held HIGH throughout the data hold time. This prevents input/ output data contention for the time period prior to the byte write enable inputs being sampled. 4. ADV# must be HIGH to permit a WRITE to the loaded address. 5. Full-width WRITE can be initiated by GW# LOW; or GW# HIGH and BWE#, BWa# and BWb# LOW for the x18 version; or GW# HIGH and BWE#, BWa#-BWd# LOW for the x32 and x36 versions. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 8/00 20 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM READ/WRITE TIMING tKC CLK tKH tADSS tKL tADSH ADSP# ADSC# tAS A1 ADDRESS tAH A2 A3 A4 tWS A5 A6 D(A5) D(A6) tWH BWE#, BWa#-BWd# tCES (NOTE 4) tCEH CE# (NOTE 2) ADV# OE# tDS D High-Z Q tOELZ D(A3) tOEHZ Q(A1) tDH tKQ (NOTE 1) Q(A4) Q(A2) Back-to-Back READs Single WRITE Q(A4+1) Q(A4+2) Q(A4+3) Back-to-Back WRITEs BURST READ DONÕT CARE UNDEFINED READ/WRITE TIMING PARAMETERS SYMBOL tKC fKF tKH tKL 1.8 1.8 tKQ tOELZ tADSS 1.9 1.9 6.8 0 tOEHZ tAS -6.8 -6.8 -7.5 -8.5 -10 MIN MAX MIN MAX MIN MAX MIN MAX UNITS 8.0 8.8 10.0 15 ns 125 113 100 66 MHz 7.5 0 3.8 1.8 1.8 1.9 1.9 8.5 0 4.2 2.0 2.0 4.0 4.0 10.0 0 5.0 2.0 2.0 5.0 2.5 2.5 SYMBOL tWS tDS ns ns tCES ns ns ns tADSH ns ns tCEH tAH tWH tDH -7.5 -8.5 -10 MIN MAX MIN MAX MIN MAX MIN MAX UNITS 1.8 2.0 2.0 2.5 ns 1.8 1.8 0.5 2.0 2.0 0.5 2.0 2.0 0.5 2.5 2.5 0.5 ns ns ns 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns NOTE: 1. Q(A4) refers to output from address A4. Q(A4 + 1) refers to output from the next internal burst address following A4. 2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE# is HIGH, CE2# is HIGH and CE2 is LOW. 3. The data bus (Q) remains in High-Z following a WRITE cycle unless an ADSP#, ADSC# or ADV# cycle is performed. 4. GW# is HIGH. 5. Back-to-back READs may be controlled by either ADSP# or ADSC#. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 8/00 21 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 165-PIN FBGA 0.85 ±0.075 0.10 A SEATING PLANE A 10.00 BALL A11 165X Ø 0.45 1.00 (TYP) BALL A1 PIN A1 ID 1.20 MAX PIN A1 ID 7.50 ±0.05 14.00 15.00 ±0.10 7.00 ±0.05 1.00 (TYP) MOLD COMPOUND: EPOXY NOVOLAC SUBSTRATE: PLASTIC LAMINATE 6.50 ±0.05 SOLDER BALL MATERIAL: EUTECTIC 63% Sn, 37% Pb SOLDER BALL PAD: Ø .33mm 5.00 ±0.05 13.00 ±0.10 NOTE: 1. All dimensions in millimeters MAX or typical where noted. MIN 2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 8/00 22 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 100-PIN PLASTIC TQFP (JEDEC LQFP) PIN #1 ID 22.10 +0.10 -0.15 0.15 +0.03 -0.02 0.32 +0.06 -0.10 0.65 20.10 ±0.10 DETAIL A 0.62 1.50 ±0.10 0.10 14.00 ±0.10 16.00 +0.20 -0.05 0.25 0.10 +0.10 -0.05 GAGE PLANE 1.00 (TYP) 0.60 ±0.15 1.40 ±0.05 DETAIL A NOTE: 1. All dimensions in millimeters MAX or typical here noted. MIN 2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: [email protected], Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron and SyncBurst are registered trademarks of Micron Technology, Inc. Pentium is a registered trademark of Intel Corporation. 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 8/00 23 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM REVISION HISTORY Removed FBGA Part Marking Guide, REV 8/00, FINAL ........................................................................ August/22/00 Changed FBGA capacitance values, REV 8/00, FINAL ............................................................................. August/7/00 CI; TYP 2.5pF from 4pF; MAX. 3.5pF from 5pF CO; TYP 4pF from 6pF; MAX. 5pF from 7pF CCK; TYP 2.5pF from 5pF; MAX. 3.5pF from 6pF Removed IT References, REV 7/00, FINAL ..................................................................................................... July/10/00 Added FBGA Part Marking Guide Added Revision History to Datasheet Removed IT from Part Number Example, REV 6/00, FINAL ....................................................................... June/21/00 Added # of datalines to the databus in x32/36 Block Diagram Changed tKQLZ from 4.0ns MIN to 1.5ns MIN Added Note - “Preliminary Package Data” to FBGA Capacitance and Thermal Resistance Tables Changed heading on Mechanical Drawing from BGA to FBGA Added 165-Pin FBGA package, REV 3/00, FINAL ....................................................................................... May/23/00 Added PRELIMINARY PACKAGE DATA to diagram 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM MT58L128L18F_2.p65 – Rev. 8/00 24 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc.