SSDI F00307B N-channel power mosfet Datasheet

SFF130/3 & SFF130/66
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
DESIGNER’S DATA SHEET
14 AMP / 100 Volts
0.18 Ω
N-Channel Power MOSFET
Part Number / Ordering Information 1/
SFF130 __ __
│ └ Screening 2/
│
__ = Not Screen
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
│
Package
│
└ /3= TO-3
Features:
•
•
•
•
•
•
•
•
•
•
•
Rugged Construction with Poly Silicon Gate
Low RDS(ON) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed Package
Available in both hot case and isolated versions
Ideal for low power applications
TX, TXV, Space Level Screening Available 2/
• Replacement for IRFF130 & 2N6756 Types
/66= TO-66
TO-66
TO-3
Maximum Ratings 3/
Symbol
Value
Units
Drain – Source Voltage
VDS
100
Volts
Gate – Source Voltage
VGS
±20
Volts
TC = 25ºC
TC = 100ºC
ID
14
9
Amps
TC = 25ºC
TA = 25ºC
PD
25
19
Watts
Top & Tstg
-55 to +150
ºC
Thermal Resistance Junction to Case
RθJC
5
ºC/W
Single Pulse Avalanche Energy
EAS
75
mJ
Repetitive Avalanche Energy
EAR
7.5
mJ
Continuous Collector Current
Power Dissipation
Operating & Storage Temperature
TO-66
TO-3
.165
2x Ø.151
.135 MAX
.675
.655
.525 MAX
2x R.188 MAX
SEATING PLANE
2x .043
.038
Ø.875
MAX
2
.440
.420
.450
.250
2x .225
.205
2x .312 MIN
1
1.197
1.177
NOTES: 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500/542.
3/ Unless Otherwise Specified, All Maximum Ratings and Electrical Characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00307B
DOC
SFF130/3 & SFF130/66
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Electrical Characteristics @ TJ = 25ºC
(Unless Otherwise Specified)
Symbol
Min
Typ
Max
Units
BVDSS
100
––
––
Volts
ΔBVDSS
ΔTj
––
130
––
mV/ ºC
RDS(on)
––
0.13
0.14
0.18
0.21
Ω
VGS(th)
2.0
2.8
4.0
V
gfs
4.6
7
––
mho
IDSS
––
––
––
––
25
250
μA
At rated VGS
IGSS
––
––
––
––
+100
-100
nA
VGS=10 Volts
50% rated VDS
Rated ID
VDD=50%
Rated VDS
50% rated ID
RG= 7.5Ω
Qg
Qgs
Qgd
12
1.5
5
17
3.7
7.0
35
10
20
nC
td(on)
tr
td(off)
tf
––
––
––
––
9.5
42
22
25
35
80
60
45
nsec
VSD
––
1
1.5
V
trr
QRR
––
––
120
0.58
300
3
nsec
μC
Ciss
Coss
Crss
––
––
––
650
250
44
––
––
––
pF
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 μA)
Temperature Coefficient of Breakdown Voltage
Drain to Source On State Resistance
ID=9A
ID=14A
(VGS=10 V )
Gate Threshold Voltage
(VDS=VGS, ID=250 μA )
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 9A)
Zero Gate Voltage Drain Current
(VDS=80% max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TJ=25ºC
IF=10A
Di/dt=100A/μsec
VGS=0 Volts
VDS=25 Volts
f=1 MHz
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
Available Part Number:
SFF130/3; SFF130/66
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
PIN ASSIGNMENT (Standard)
Package
TO-3
TO-66
Drain
Case
Case
DATA SHEET #: F00307B
Source
Pin 2
Pin 2
Gate
Pin 1
Pin 1
DOC
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