MMBT3906T Rev.E Mar.-2016 描述 / DATA SHEET Descriptions SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package. 特征 / Features 高 hFE，低 VCE(sat) 。 High DC Current Gain, Low Collector to Emitter Saturation Voltage. 用途 / Applications 用于普通放大及开关。 General purpose amplifier and switching. 内部等效电路 / Equivalent Circuit 引脚排列 1 2 / Pinning 3 PIN1：Base 印章代码 PIN 2：Collector PIN 3：Emitter / Marking hFE Range http://www.fsbrec.com H2A ** Marking 100～300 1/7 MMBT3906T Rev.E Mar.-2016 极限参数 / DATA SHEET Absolute Maximum Ratings(Ta=25℃) 参数 Parameter 符号 Symbol Collector to Base Voltage VCBO 数值 Rating -40 Collector to Emitter Voltage VCEO -40 V Emitter to Base Voltage VEBO -5.0 V Collector Current - Continuous IC -200 mA Collector Power Dissipation PC 450 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range 电性能参数 单位 Unit V / Electrical Characteristics(Ta=25℃) 参数 Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage 符号 Symbol 测试条件 Test Conditions 最小值 典型值 最大值 单位 Min Typ Max Unit VCBO IC=-10mA IE=0 -40 V VCEO IC=-1.0mA IB=0 -40 V Emitter to Base Breakdown Voltage VEBO IE=-10μA IC=0 -5.0 V Collector Cut-Off Current ICBO VCB=-30V IE=0 -0.05 μA Emitter Base Cut-Off Current IEBO VEB=-3.0V IC=0 μA hFE(1) VCE=-1.0V IC=-10mA 100 -0.05 300 hFE(2) VCE=-1.0V IC=-100mA 30 hFE(3) VCE=-1.0V IC=-50mA 60 hFE(4) VCE=-1.0V IC=-1.0mA 80 hFE(5) VCE=-1.0V IC=-0.1mA 60 VCE(sat) (1) IC=-10mA IB=-1.0mA -0.25 V VCE(sat) (2) IC=-50mA IB=-5.0mA -0.4 V VBE(sat) (1) IC=-10mA IB=-1.0mA -0.85 V VBE(sat) (2) IC=-50mA IB=-5.0mA -0.95 V DC Current Gain Collector to Emitter Saturation Voltage Emitter to Base Saturation Voltage http://www.fsbrec.com -0.65 2/7 MMBT3906T Rev.E Mar.-2016 电性能参数 DATA SHEET / Electrical Characteristics(Ta=25℃) 参数 Parameter Transition Frequency 符号 Symbol fT Collector Output Capacitance Cob Storage Time tstg Fall Time tf Delay Time td Rise Time tr Input Capacitance http://www.fsbrec.com Cib 测试条件 最小值 典型值 最大值 单位 Test Conditions Min Typ Max Unit IC=-10mA VCE=-20V 250 MHz f=100MHz 4.5 pF VCB=-5.0V f=1.0MHz VCC=-3.0V IC=-10mA 225 ns IB1=-IB2=-1.0mA VCC=-3.0V IC=-10mA 75 ns IB1=-IB2=-1.0mA VCC=-3.0V VBE=-0.5V 35 ns IB1=-1.0mA IC=-10mA VCC=-3.0V VBE=-0.5V 35 ns IB1=-1.0mA IC=-10mA f=1.0MHz 10 pF VEB=-0.5V 3/7 MMBT3906T Rev.E Mar.-2016 DATA SHEET 电参数曲线图 / Electrical Characteristic Curve http://www.fsbrec.com 4/7 MMBT3906T Rev.E Mar.-2016 外形尺寸图 DATA SHEET / Package Dimensions http://www.fsbrec.com 5/7 MMBT3906T Rev.E Mar.-2016 印章说明 / DATA SHEET Marking Instructions ** H2A 说明： H： 为公司代码 2A： 为型号代码 **： 为生产批号代码，随生产批号变化。 Note: H: Company Code. 2A: Product Type. **: Lot No. Code, code change with Lot No. http://www.fsbrec.com 6/7 MMBT3906T Rev.E Mar.-2016 DATA SHEET 回流焊温度曲线图(无铅) / Temperature Profile for IR Reflow Soldering(Pb-Free) 说明： Note: 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150℃, Time:60~90sec. 2、峰值温度 245±5℃，时间持续为 5±0.5sec; 2.Peak Temp.:245±5℃, Duration:5±0.5sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：260±5℃ 包装规格 Time:10±1 sec / REEL Package Type 封装形式 使用说明 Temp.:260±5℃ / Packaging SPEC. 卷盘包装 SOT-89 时间：10±1 sec. Units 包装数量 Dimension 包装尺寸 3 (unit：mm ) Units/Reel 只/卷盘 Reels/Inner Box 卷盘/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Reel Inner Box 盒 Outer Box 箱 1,000 7 7,000 8 56,000 7〞×12 180×120×180 385×257×392 / Notices http://www.fsbrec.com 7/7