To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR10CS OUTLINE DRAWING 4 Dimensions in mm ∗ 1.3 VOLTAGE CLASS +0.3 0 –0 (1.5) 3.0 –0.5 +0.3 1.5 MAX 8.6±0.3 9.8±0.5 TYPE NAME 4.5 1.5 MAX 10.5 MAX 1 5 0.5 1 2 3 24 • IT (RMS) ...................................................................... 10A • VDRM ....................................................................... 600V • IFGT !, IRGT !, IRGT # ............................................ 20mA 1 1 2 3 3 4 2.6±0.4 4.5 0.8 ∗ Measurement point of case temperature T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220S APPLICATION Contactless AC switches, light drimmer, electric flasher unit, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage ✽1 600 V VDSM Non-repetitive peak off-state voltage ✽1 720 V Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=103°C✽3 ITSM Surge on-state current I2t I2t for fusing PGM Peak gate power dissipation 5 W PG (AV) Average gate power dissipation 0.5 W VGM Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Tstg 10 A 60Hz sinewave 1 full cycle, peak value, non-repetitive 100 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 41.6 A2s Storage temperature — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 1.2 g ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=15A, Instantaneous measurement — — 1.5 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 20 mA — — 20 mA — — 20 mA IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V Rth (j-c) Thermal resistance Junction to case ✽3 ✽4 — — 1.8 °C/ W (dv/dt)c Critical-rate of rise of off-state commutating voltage Tj=125°C 10 — — V/µs ✽5 ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. ✽5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125°C MAIN CURRENT 2. Rate of decay of on-state commutating current (di/dt)c=–5.0A/ms TIME (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD=400V TIME (dv/dt)c VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 100 7 5 3 2 101 7 5 3 2 Tj = 125°C Tj = 25°C 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 VGM = 10V 101 PGM = 5W PG(AV) = 7 5 0.5W 3 VGT = 1.5V 2 IGM = 2A 100 7 5 3 2 IRGT I IFGT I, IRGT III VGD = 0.2V 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT I, IRGT III 102 7 5 4 3 2 IFGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) 103 7 5 4 3 2 102 2 3 5 7 103 2 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (°C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 32 160 28 140 CASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 24 360° CONDUCTION 20 RESISTIVE, INDUCTIVE 16 LOADS 12 8 4 0 0 2 4 6 8 10 12 14 RMS ON-STATE CURRENT (A) 16 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS 40 20 0 0 2 4 6 8 10 12 14 16 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS MEDIUM POWER USE 60 60 t2.3 60 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 0 2 4 6 8 10 12 14 AMBIENT TEMPERATURE (°C) 80 60 40 20 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 104 7 5 3 2 103 7 5 3 2 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) JUNCTION TEMPERATURE (°C) 103 7 5 3 2 DISTRIBUTION T2+, G– TYPICAL EXAMPLE 102 7 5 3 2 100 –40 80 RMS ON-STATE CURRENT (A) 105 7 TYPICAL EXAMPLE 5 3 2 101 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 0 16 BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) LACHING CURRENT (mA) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE COPPER AND ALUMINUM 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 120 120 t2.3 100 100 100 t2.3 100 (%) AMBIENT TEMPERATURE (°C) Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C T2 , G TYPICAL T2– , G– EXAMPLE + + 0 40 80 120 JUNCTION TEMPERATURE (°C) 160 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 140 120 100 III QUADRANT 80 60 40 20 I QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 100 (%) Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C COMMUTATION CHARACTERISTICS 7 5 3 2 SUPPLY VOLTAGE MAIN VOLTAGE (dv/dt)c 101 7 5 (di/dt)c TIME TIME VD MINIMUM CHARACTERISTICS VALUE 3 2 TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz TIME MAIN CURRENT I QUADRANT III QUADRANT 100 7 100 2 3 5 7 101 2 3 5 7 102 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 103 7 5 4 3 2 6Ω TYPICAL EXAMPLE IFGT I IRGT I IRGT III A 6V 102 7 5 4 3 2 A 6V RG V TEST PROCEDURE 1 V RG TEST PROCEDURE 2 6Ω A 6V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) V RG TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR10CS OUTLINE DRAWING 4 Dimensions in mm ∗ 1.3 VOLTAGE CLASS +0.3 0 –0 (1.5) 3.0 –0.5 +0.3 1.5 MAX 8.6±0.3 9.8±0.5 TYPE NAME 4.5 1.5 MAX 10.5 MAX 1 5 0.5 1 2 3 24 • IT (RMS) ...................................................................... 10A • VDRM ....................................................................... 600V • IFGT !, IRGT !, IRGT # ............................................ 20mA 1 1 2 3 3 4 2.6±0.4 4.5 0.8 ∗ Measurement point of case temperature T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220S APPLICATION Contactless AC switches, light drimmer, electric flasher unit, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage ✽1 600 V VDSM Non-repetitive peak off-state voltage ✽1 720 V Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=128°C✽3 ITSM Surge on-state current I2t I2t for fusing PGM Peak gate power dissipation 5 W PG (AV) Average gate power dissipation 0.5 W VGM Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Tstg 10 A 60Hz sinewave 1 full cycle, peak value, non-repetitive 100 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 41.6 A2s Storage temperature — Weight Typical value A –40 ~ +150 °C –40 ~ +150 °C 1.2 g ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=150°C, VDRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=15A, Instantaneous measurement — — 1.5 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 20 mA — — 20 mA — — 20 mA 0.2/0.1 — — V — — 1.8 °C/ W 10/1 — — V/µs IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C/150°C, VD=1/2VDRM Rth (j-c) Thermal resistance Junction to case ✽3 ✽4 (dv/dt)c Critical-rate of rise of off-state commutating voltage ✽5 Tj=125°C/150°C ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. ✽5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125°C/150°C MAIN CURRENT 2. Rate of decay of on-state commutating current (di/dt)c=–5.0A/ms TIME (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD=400V TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT MAXIMUM ON-STATE CHARACTERISTICS 102 SURGE ON-STATE CURRENT (A) 100 ON-STATE CURRENT (A) 7 5 3 2 Tj = 150°C 101 7 5 3 2 Tj = 25°C 100 7 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ON-STATE VOLTAGE (V) 4.0 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) GATE VOLTAGE (V) 5 3 2 VGM = 10V PGM = 5W 101 7 5 3 2 PG(AV) = 0.5W IGM = 2A VGT = 1.5V 100 7 5 3 2 IRGT I IFGT I, IRGT III 10–1 7 VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 TYPICAL EXAMPLE 7 5 3 IRGT I, IRGT III 2 102 IFGT I 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 TRANSIENT THERMAL IMPEDANCE (°C/W) 103 7 5 4 3 2 102 2 3 5 7 103 2 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (°C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 32 160 28 140 CASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 24 360° CONDUCTION 20 RESISTIVE, INDUCTIVE 16 LOADS 12 8 4 0 0 2 4 6 8 10 12 14 RMS ON-STATE CURRENT (A) 16 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS 40 20 0 0 2 4 6 8 10 12 14 16 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS MEDIUM POWER USE 20 0 100 (%) HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 3 2 DISTRIBUTION 102 7 5 3 2 + 100 (%) JUNCTION TEMPERATURE (°C) – T2 , G TYPICAL EXAMPLE BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) LACHING CURRENT (mA) 40 HOLDING CURRENT VS. JUNCTION TEMPERATURE 7 5 3 2 –40 60 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 100 80 RMS ON-STATE CURRENT (A) TYPICAL EXAMPLE 101 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS, CURVES APPLY 140 REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE 100 LOADS RMS ON-STATE CURRENT (A) 106 7 5 3 2 AMBIENT TEMPERATURE (°C) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE COPPER AND ALUMINUM, CURVES 140 APPLY REGARDLESS OF CONDUCTION ANGLE 120 120 120 t2.3 100 100 100 t2.3 80 60 60 t2.3 60 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 2 4 6 8 10 12 14 16 0 100 (%) AMBIENT TEMPERATURE (°C) The product guaranteed maximum junction temperature 150°C (See warning.) T2 , G TYPICAL T2– , G– EXAMPLE + + 0 40 80 120 JUNCTION TEMPERATURE (°C) 160 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS MEDIUM POWER USE TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 III QUADRANT 100 80 60 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 100 (%) 160 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150°C) 160 TYPICAL EXAMPLE Tj = 150°C 140 BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125°C) 140 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 120 100 III QUADRANT 80 60 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) COMMUTATION CHARACTERISTICS (Tj = 125°C) COMMUTATION CHARACTERISTICS (Tj = 150°C) 7 5 3 2 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz TIME (di/dt)c TIME TIME VD 101 7 MINIMUM CHARAC5 TERISTICS 3 VALUE I QUADRANT 2 III QUADRANT 100 7 0 10 2 3 5 7 101 2 3 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 100 (%) The product guaranteed maximum junction temperature 150°C (See warning.) 7 5 3 2 101 7 5 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD TYPICAL EXAMPLE Tj = 150°C 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz I QUADRANT III QUADRANT 3 2 MINIMUM CHARACTERISTICS 100 VALUE 7 0 10 2 3 5 7 101 2 3 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 TYPICAL EXAMPLE IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC 6Ω LOAD A 6V RG V TEST PROCEDURE 1 C1 A 6V V RG TEST PROCEDURE 2 R1 C1 = 0.1~0.47µF R1 = 47~100Ω C0 R0 C0 = 0.1µF R0 = 100Ω 6Ω A 6V V RG TEST PROCEDURE 3 Mar. 2002