Shantou Huashan Electronic Devices Co.,Ltd. HBTA8A60 ＩＮＮＥＲ ＩＮＳＵＬＡＴＥＤ ＴＹＰＥ ＴＲＩＡＣ （ＩＩ ＴＯ－２２０ ＰＡＣＫＡＧＥ） █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=8A) * High Commutation dv/dt █ General Description The Triac HBTA8A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. █ Absolute Maximum Ratings（Ta=25℃） T stg ——Storage Temperature……………………………………………………………… －40~125℃ T j ——Operating Junction Temperature …………………………………………………… －40~125℃ PGM——Peak Gate Power Dissipation………………………………………………………………… 5W VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V IT （RMS）——R.M.S On-State Current（Ta=89℃）………………………………………………… 8A VG M ——Peak Gate Voltage ………………………………………………………………… 10V I G M— — P e a k G a t e C u r r e n t … … … … … … … … … … … … … … … … … … … … … … … 2 . 0 A ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)…………………… 80/88A VISO ——RMS Isolation Breakdown Voltage……………………………………………………… 2500V █ Electrical Characteristics （Ta=25℃） Symbol Items Min. Max. Unit Conditions IDRM Repetitive Peak Off-State Current 2.0 mA VTM Peak On-State Voltage 1.4 V VD=VDRM, Single Phase,Half Wave, TJ=125℃ IT=12A, Inst. Measurement I+GT1 Gate Trigger Current（Ⅰ） 30 mA VD =6V, RL =10 ohm I- GT1 Gate Trigger Current（Ⅱ） 30 mA VD =6V, RL =10 ohm I-GT3 Gate Trigger Current（Ⅲ） 30 mA VD =6V, RL =10 ohm V+ GT1 Gate Trigger Voltage（Ⅰ） 1.5 V VD =6V, RL =10 ohm V- GT1 Gate Trigger Voltage（Ⅱ） 1.5 V VD =6V, RL =10 ohm V- GT3 Gate Trigger Voltage（Ⅲ） 1.5 V VD =6V, RL =10 ohm VGD 0.2 V 10 V/µS Rth(j-c) Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Thermal Resistance T J=125℃,VD =1/2VDRM TJ=125℃,VD=2/3VDRM (di/dt)c=-4.0A/ms Junction to case IH Holding Current (dv/dt)c 3.7 15 ℃/W mA Shantou Huashan Electronic Devices Co.,Ltd. HBTA8A60 █ Performance Curves Gate Characteristics Fig 2. On-State Voltage On-state Current [A] Gate Voltage (V) Fig 1. 10 1 0.1 101 102 Gate Current 103 (mA) On-State Voltage [V] Fig 3. Gate Trigger Voltage vs. Junction Fig 4. On State Current vs. Maximum Power Dissipation Power Dissipation [W] Temperature Junction Temperature [℃］ RMS On-State Current [A] Fig 5. On State Current vs. Fig 6. Surge On-State Current Rating ( Non-Repetitive ) Surge On-state Current [A] Allowable Case Temp. [°C] Allowable Case Temperature 100 RMS On-State Current [A] 101 Time（Cycles） 102 Shantou Huashan Electronic Devices Co.,Ltd. Fig 7. Gate Trigger Current vs. HBTA8A60 Fig 8. Transient Thermal Impedance Impedance [℃/W ] Transient Thermal Junction Temperature Ｔｉｍｅ（ｓｅｃ） Junction Temperature [℃］ Fig 9. Gate Trigger Characteristics Test Circuit １０Ω Test ProcedureⅠ １０Ω Test ProcedureⅡ １０Ω Test ProcedureⅢ