CHA2159 RoHS COMPLIANT 55-65GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2159 is a four - stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This simplifies the assembly process. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Gain & RLosses (dB) Main Features ■ 4.0 dB noise figure ■ 20 dB gain ■ 14 dBm output power (-1dB gain comp.) ■ DC power consumption, 115mA @ 3.5V ■ Chip size: 2.35 x 1.11 x 0.10 mm 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 dBS11 dBS22 55 dBS21 NF Typ. 60 65 Frequency (GHz) Typical on Wafer Measurements Main Characteristics Tamb = +25°C, Vd = 3.5V Symbol Parameter Min Fop Operating frequency range 55 G Small signal gain 18 NF Noise figure P1dB Output power at 1dB gain compression Id Bias current Typ Unit 65 GHz 20 4.0 13 Max dB 4.8 14 115 dB dBm 150 mA ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHA21597262 - 19 Sep 07 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 55-65GHz Low Noise Amplifier CHA2159 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V Symbol Fop G ∆G Parameter Min Operating frequency range (1) 55 Small signal gain (1) 18 Small signal gain flatness (1) Is Reverse isolation (1) NF Noise figure P1dB 40 Input VSWR (1) VSWRout Output VSWR (1) 13 Max Unit 65 GHz 20 dB ±1.0 dB 50 dB 4.0 CW output power at 1dB compression (1) VSWRin Typ 4.8 14 dBm 2.5:1 4.0:1 2.0:1 2.5:1 130 Id Bias current 115 Vd DC Voltage 3.5 dB mA V (1) These values are representative for CW on-wafer measurements that are made without bonding wires at the RF ports. A wire bond of typically 0.1 to 0.15 nH will improve the input and output matching. Absolute Maximum Ratings Tamb = +25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 4.0 V Id Drain bias current in linear condition 150 mA Vg Gate bias voltage -2.0 to +0.4 V Pin Maximum peak input power overdrive (2) 0 dBm Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA21597262 - 19 Sep 07 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 55-65GHz Low Noise Amplifier CHA2159 Typical chip on wafer Sij parameters Bias Conditions: Vd = +3.5V, Vg1 = Vg23 = Vg4 adjusted for Id = 115mA Freq (GHz) dB(S11) 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 -3.6 -3.7 -3.6 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.4 -3.4 -3.4 -3.5 -3.6 -3.7 -3.9 -4.1 -4.5 -4.9 -5.7 -6.6 -7.1 -6.9 -6.2 -5.5 -5.3 -5.5 -5.5 -5.7 -5.9 -5.9 -6.2 -6.0 -5.6 -5.5 -5.8 -5.7 -5.8 -5.9 -6.0 -7.1 -7.1 -7.0 -7.5 -7.9 -8.3 P(S11) (°) dB(S12) P(S12) (°) dB(S21) P(S21) (°) dB(S22) P(S22) (°) -168.5 -172.8 -177.5 177.6 172.6 167.9 163.2 158.5 153.2 147.9 142.3 136.2 130.0 123.7 117.5 110.8 103.7 95.9 88.5 81.3 78.0 76.7 76.6 73.3 64.0 53.7 42.8 34.2 24.3 16.0 6.7 -0.5 -8.6 -18.2 -31.1 -40.4 -50.9 -62.2 -72.9 -84.0 -94.9 -102.8 -111.9 -122.1 -127.1 -137.0 -64.4 -67.3 -62.1 -58.6 -58.3 -54.5 -57.5 -54.9 -54.9 -53.0 -52.6 -54.4 -51.5 -50.5 -49.7 -50.1 -48.8 -49.7 -49.6 -48.9 -50.3 -49.3 -48.3 -48.5 -48.1 -48.1 -49.8 -50.8 -51.8 -49.8 -51.2 -49.9 -47.8 -47.4 -47.2 -57.2 -51.5 -48.4 -49.5 -49.0 -44.6 -49.7 -44.5 -46.1 -44.5 -48.4 166 173 150 162 146 113 129 106 100 96 88 84 76 70 60 50 42 31 28 10 3 4 -1 -18 -21 -39 -49 -59 -40 -52 -42 -72 -68 -58 -63 -91 -99 -79 -91 -105 -115 -141 -141 -168 175 167 -8.4 -7.7 -7.4 -7.1 -6.9 -6.6 -6.5 -6.3 -6.0 -5.7 -5.4 -5.2 -4.8 -4.4 -3.9 -3.2 -2.2 -0.7 1.3 3.6 6.2 8.6 10.7 12.2 13.3 14.1 14.9 15.8 16.6 17.3 18.0 18.4 18.9 19.4 19.7 19.8 19.8 19.9 19.7 19.7 19.6 19.7 19.5 19.7 20.1 21.0 -116 -142 -168 167 144 122 101 82 62 44 25 7 -10 -25 -40 -54 -66 -78 -93 -109 -131 -155 176 146 116 88 61 33 4 -23 -53 -82 -111 -141 -172 157 127 96 65 35 5 -27 -59 -91 -124 -161 -4.7 -4.5 -4.3 -4.1 -3.8 -3.5 -3.3 -3.1 -2.9 -2.7 -2.7 -2.6 -2.5 -2.4 -2.3 -2.2 -2.2 -2.3 -2.2 -2.3 -2.5 -2.6 -3.0 -3.3 -3.7 -4.1 -4.8 -5.8 -6.6 -7.5 -8.2 -9.0 -9.4 -9.4 -9.6 -9.4 -9.1 -8.8 -9.1 -9.7 -10.1 -10.1 -10.3 -10.9 -12.5 -13.4 -177 -180 177 174 170 166 161 156 151 146 140 135 129 124 117 111 104 98 90 83 74 66 58 49 41 32 24 17 11 6 1 -1 -4 -6 -9 -14 -20 -26 -38 -43 -52 -57 -64 -72 -75 -69 Ref. : DSCHA21597262 - 19 Sep 07 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 55-65GHz Low Noise Amplifier CHA2159 Typical on Wafer Measurements Bias conditions: Tamb = +25°C, Vd = 3.5V, Vg1 = Vg2 3 = Vg4 adjusted for Id = 115mA Gain, Rlosses & NF (dB) Typical Gain, Return Losses and Noise figure 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 dBS11 40 dBS21 45 dBS22 50 55 Frequency (GHz) NF Typ. 60 65 Typ ic a l O u tp ut P ow e r -1 d B 20 19 Output Power P-1dB (dBm) 18 17 16 15 14 13 12 11 10 9 8 55 56 57 58 59 60 61 62 63 64 65 Fr e q ue n c y (GH z ) Ref. : DSCHA21597262 - 19 Sep 07 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 55-65GHz Low Noise Amplifier CHA2159 Chip Assembly and Mechanical Data Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended. Bonding pad positions DC Pads size: 100/100 µm, chip thickness: 100µm. Ref. : DSCHA21597262 - 19 Sep 07 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 55-65GHz Low Noise Amplifier CHA2159 Ordering Information Chip form : CHA2159-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA21597262 - 19 Sep 07 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice