AH118 ¼ Watt, High Linearity InGaP HBT Amplifier Applications • • Final stage amplifiers for Repeaters Mobile Infrastructure SOT-89 Package Product Features • • • • • • • Functional Block Diagram GND 60 – 3500 MHz +24.7 dBm PIdB +40.5 dBm Output IP3 20.4 dB Gain @ 900 MHz 16.5 dB Gain @ 1900 MHz +5V Single Positive Supply Lead-free/Green/RoHS-compliant SOT-89 Package 4 1 RF IN 2 3 GND RF OUT General Description Pin Configuration The AH118 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +40.5 dBm OIP3 and +24.7 dBm of compressed 1dB power. The AH118 is available in a leadfree/green/RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. Pin # Function 1 2 3 4 The AH118 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. Internal biasing allows the AH118 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Input / Base Ground Output / Collector Ground Not Recommended for New Designs Recommended Replacement Part: TQP7M9101 Ordering Information Part No. AH118-89G Description High IP3 InGaP HBT Amp Standard T/R size = 1000 pieces on a 7” reel. Data Sheet: Rev B 02/14/12 © 2012 TriQuint Semiconductor, Inc. - 1 of 14 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® AH118 ¼ Watt, High Linearity InGaP HBT Amplifier Specifications Absolute Maximum Ratings Parameter Storage Temperature RF Input Power, T = 25ºC Device Voltage Device Current Recommended Operating Conditions Rating Parameter -65 to +150 oC +15 dBm +6 V 220 mA Vcc Icc TJ (for >106 hours MTTF) Min +4.75 Typ +5 160 Max Units +5.25 200 V mA o C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: +25ºC on a tuned test fixture Parameter Operational Frequency Range Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 WCDMA Channel Power @ -45 dBc ACLR, 2140 MHz Conditions Min 60 13.5 See Note 1 See Note 2 Noise Figure Vcc Operational Current Range Thermal Resistance (junction to case) +23 +39.5 140 Typical Max Units 3500 1900 16.0 12 20 +24.7 +40.5 +16.7 4.3 +5 160 175 92 MHz MHz dB dB dB dBm dBm dBm dB V mA o C/W Notes: 1. OIP3 is measured with two tones separated by 1 MHz at 11dBm output power/tone. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule. 2. Signal: W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10 dB @ 0.01% Probability, 3.84 MHz BW Data Sheet: Rev B 02/14/12 © 2012 TriQuint Semiconductor, Inc. - 2 of 14 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® AH118 ¼ Watt, High Linearity InGaP HBT Amplifier Device Characterization Data S11 0 3. 4.0 5.0 0.2 5 1.0 2. 0 10.0 4.0 5.0 2.0 3.0 1.0 0.8 0.6 0.2 0.4 -10.0 -4. 0 -5. 0 -3 .0 -0.8 Swp Min 0.01GHz -1.0 Swp Min 0.01GHz .0 -2 .4 -0 -0 .6 2.5 .0 -2 2 -1.0 1.5 1 Frequency (GHz) -0.8 0.5 0 -0 .6 .4 -0 -10 2 -0. -3 .0 2 -0. -4. 0 -5. 0 0 -5 3. 10.0 0 10.0 3.0 4.0 5.0 2.0 1.0 0.8 0.4 0.6 0.2 0 10 1. 2. 4.0 5.0 10.0 15 Note: 0 3. -10.0 Gain (dB) 25 20 0.8 2. 0 0. 4 30 Swp Max 6GHz 6 0. 1.0 0.8 6 0. DB(GMax) 0.2 DB(|S[2,1]|) 35 S22 Swp Max 6GHz 0. 4 Gain / Maximum Stable Gain 40 S-Parameters (VDevice = +5 V, ICC = 160 mA, 25 °C, unmatched 50 ohm system). The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 0.5 – 6 GHz, with markers placed at 0.5 – 6.0 GHz in 0.5 GHz increments. S-Parameter Data Vcc = +5 V, Icq = 160 mA, T = 25 °C, unmatched 50 Ohm system, calibrated to device leads Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (angle) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -2.69 -2.16 -1.91 -1.77 -1.60 -1.45 -1.40 -1.25 -1.20 -1.17 -1.13 -1.11 -1.05 -0.99 -0.93 -0.95 -0.92 -173.38 -177.19 178.30 172.47 166.83 161.09 155.39 149.59 143.79 137.57 132.05 126.72 121.50 115.58 110.41 105.30 100.11 21.74 19.63 18.22 17.13 15.99 14.97 13.84 12.76 11.71 10.63 9.75 8.88 8.00 7.31 6.52 5.73 5.05 153.70 150.82 148.19 135.41 121.91 109.02 97.28 86.83 76.95 68.15 59.55 52.22 45.09 37.40 30.66 23.51 17.07 -31.02 -30.31 -29.87 -29.83 -29.49 -29.18 -28.70 -28.63 -28.30 -27.94 -27.63 -27.51 -27.06 -27.02 -26.78 -26.66 -26.61 11.24 7.90 5.01 4.07 2.79 2.11 1.64 -0.09 -1.34 -4.47 -7.00 -8.43 -11.00 -14.19 -18.24 -20.10 -23.28 -7.02 -5.57 -5.06 -4.77 -4.60 -4.44 -4.26 -4.14 -3.97 -4.00 -3.86 -3.84 -3.62 -3.55 -3.46 -3.34 -3.30 -148.17 -162.45 -173.51 177.87 171.65 166.08 160.40 155.01 149.63 144.03 139.02 134.24 129.30 124.42 119.42 114.26 109.29 Device S-parameters are available for download off of the website at: http://www.triquint.com Data Sheet: Rev B 02/14/12 © 2012 TriQuint Semiconductor, Inc. - 3 of 14 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® AH118 ¼ Watt, High Linearity InGaP HBT Amplifier Reference Design 920-960 MHz (AH118-89PCB900) ID=C1 C=100000 pF Vcc = +5 V ID=C3 C=1000 pF D1 DIODE1 C1 C2 R2 L3 C9 L2 C7 C4 IND ID=L1 L=33 nH L1 U1 ID=C2 C=56 pF 5.6 V C3 C5 ID=C4 C=56 pF ID=L2 R=0 Ohm ID=R2 R=0.5 Ohm ID=C5 C=56 pF ID=L3 L=2.2 nH ID=C7 C=6.8 pF NET="AH118" ID=C9 C=2 pF Notes: 1. The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. 2. L2 - the 0 Ω resistor - can be removed (with a thru line) in the final circuit layout. 3. The distance from U1 pin1 pad to the edge of C7 is 120 mil. 4. The distance from U1 pin3 pad to the edge of C9 is 350 mil. Bill of Material Ref Des Value Description Manufacturer C1 0.1 μF Cap, Chip, 1206, 50 V, 10%, X7R various C2, C4, C5 56 pF Cap, Chip, 0603, 50 V, 5%, NPO/COG various C3 1000 pF Cap, Chip, 0805, 50 V, 5%, NPO various C7 6.8 pF Cap, Chip, 0603, 200 V, NPO/COG various C9 2.0 pF Cap, Chip, 0603, 200 V, NPO/COG various L1 33 nH Ind, Chip, 0603, 5%, Ceramic Core various L2 0Ω Res, Chip, 0603, 5%, 1/16 W various L3 2.2 nH Ind, Chip, 0603, ±0.3 nH, Multilayer various R2 0.51 Ω Res, Chip, 0603, 5%, 1/10 W various U1 High Linearity Amplifier R1 No Load Part D1 Zener Diode, SOD-123 Data Sheet: Rev B 02/14/12 © 2012 TriQuint Semiconductor, Inc. TriQuint - 4 of 14 - Part Number AH118-89G Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® AH118 ¼ Watt, High Linearity InGaP HBT Amplifier Typical Performance 920-960 MHz (AH118-89PCB900) Frequency MHz Gain [1] Input Return Loss Output Return Loss Output P1dB Output IP3 [2] Channel Power @ -45 dBc ACLR [3] Noise Figure Quiescent Current , Icq Device / Supply Voltage , Vcc 920 dB dB dB dBm dBm dBm dB mA V 940 19.5 12.5 12.5 24.4 39.3 16.7 4.3 960 19.5 13.2 11.7 24.5 39.5 16.7 4.4 160 +5 19.5 14.2 11.0 24.6 39.7 16.7 4.5 Notes 1. Test conditions unless otherwise noted: 25 ºC, +5V, in tuned application circuit. 2. OIP3 is measured at 11 dBm Pout / tone with 1 MHz spacing. 3. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability. S11 and S22 vs. Frequency Gain vs. Frequency 25oC 21 1MHz Spacing, 25oC 45 0.92GHz 19 18 17 -5 -10 -15 S22 S11 -20 16 0.8 0.85 0.9 Frequency (GHz) 0.95 1 0.8 0.85 0.9 Frequency (GHz) CW, 25oC 0.92GHz -40 ACLR1 (dBc) P1dB (dBm) 0.95 1 35 30 25 6 8 10 12 Output Power / Tone (dBm) 14 16 3GPP WCDMA, TM1+64DPCH, PAR=10.2dB, 5MHz Offset, 25oC -35 24 23 22 0.94GHz 0.96GHz -45 -50 -55 21 20 0.92 0.96GHz ACLR1 vs. Output Power vs. Frequency P1dB vs. Frequency 25 0.94GHz 40 OIP3 (dBm) S11 and S22 (dB) 20 Gain (dB) OIP3 vs. Output Power vs. Frequency 25oC 0 -60 0.93 0.94 Frequency (GHz) Data Sheet: Rev B 02/14/12 © 2012 TriQuint Semiconductor, Inc. 0.95 0.96 12 - 5 of 14 - 13 14 16 15 Output Power (dBm) 17 18 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® AH118 ¼ Watt, High Linearity InGaP HBT Amplifier Reference Design 1900 MHz +5V D1 CAP ID=C1 C=100000 pF D1 Diode 5.6V C1 CAP ID=C3 C=1000 pF C3 CAP ID=C2 C=56 pF C2 C9 L3 C7 C4 L1 U1 L2 C5 PORT P=1 Z=50 Ohm CAP ID=C4 C=56 pF IND ID=L1 L=18 nH IND ID=L2 L=4.7 nH CAP ID=C7 C=2.7 pF SUBCKT ID=U1 NET="AH118" CAP ID=C5 C=56 pF RES ID=L3 R=0 Ohm PORT P=2 Z=50 Ohm CAP ID=C9 C=1.8 pF Note: 1. 2. 3. 4. The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. L2 - the 0 Ω resistor - can be removed (with a thru line) in the final circuit layout. C7 should be placed at the silk screen marker 'B' on the TriQuint evaluation board. C7 should be placed at the silk screen marker '4' on the TriQuint evaluation board. Bill of Material Ref Des U1 C1 C2, C4, C5 C3 C7 C9 L1 L2 L3 R1 D1 Value 0.1 μF 56 pF 1000 pF 2.7 pF 1.8 pF 18 nH 4.7 nH 0Ω Description High Linearity Amplifier Cap, Chip, 1206, 50 V, 10%, X7R Cap, Chip, 0603, 50 V, 5%, NPO/COG Cap, Chip, 0805, 50 V, 5%, NPO Cap, Chip, 0603, 50 V, ±0.05 pF, NPO/COG Cap, Chip, 0603, 50 V, ±0.05 pF, NPO/COG Ind, Chip, 0603, 5%, Ceramic Core Ind, Chip, 0603, ±0.3 nH, Multilayer Res, 0402, Chip, 5%, 1/16 W No Load Part Zener Diode, SOD-123 Data Sheet: Rev B 02/14/12 © 2012 TriQuint Semiconductor, Inc. - 6 of 14 - Manufacturer Part Number TriQuint various various various various various various various various AH118-89G Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® AH118 ¼ Watt, High Linearity InGaP HBT Amplifier Typical Performance 1900 MHz Frequency MHz Gain [1] Input Return Loss Output Return Loss Output P1dB Output IP3 [2] Channel Power @ -45 dBc ACLR [3] Quiescent Current , Icq Device / Supply Voltage , Vcc 1900 dB dB dB dBm dBm dBm mA V 16.0 7.5 11.4 25.4 41.5 14 160 +5 Notes 1. Test conditions unless otherwise noted: 25 ºC, +5V, in tuned application circuit. 2. OIP3 is measured at 11 dBm Pout / tone with 1 MHz spacing. 3. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability. Gain vs. Frequency S11 and S22 vs. Frequency 25oC 18 25oC 0 S11 and S22 (dB) Gain (dB) 17 16 15 14 13 1.88 1.89 1.9 Frequency (GHz) 1.91 -5 S11 -10 S22 -15 1.88 1.92 OIP3 vs. Output Power 1.9 Frequency (GHz) 1.91 1.92 ACLR1 vs. Output Power Frequency: 1900MHz, 1MHz Spacing, 25oC 3GPP WCDMA, TM1+64DPCH, PAR=10.2dB, 5MHz Offset, 25oC -35 45 -40 ACLR1 (dBc) 40 OIP3 (dBm) 1.89 35 30 -45 -50 -55 25 6 8 10 12 Output Power / Tone (dBm) Data Sheet: Rev B 02/14/12 © 2012 TriQuint Semiconductor, Inc. 14 16 1900 MHz -60 - 7 of 14 - 11 12 13 Output Power (dBm) 14 15 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® AH118 ¼ Watt, High Linearity InGaP HBT Amplifier Reference Design 2110-2170 MHz (AH118-89PCB2140) Vcc = +5 V ID=C1 C=1e5 pF size 1206 ID=C3 C=1000 pF size 0805 D1 C1 DIODE1 C3 ID=C2 C=56 pF 5.6 V C2 ID=L1 L=18 nH L1 U1 L3 L2 C9 C6 C4 C5 ID=C4 C=56 pF ID=L2 C=1.5 pF ID=C5 C=56 pF ID=L3 R=0 Ohm NET="AH118" ID=C6 C=1.8 pF ID=C9 C=1.2 pF Note: 1. The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. 2. L2 - the 0 Ω resistor - can be removed (with a thru line) in the final circuit layout. 3. The distance from U1 pin1 pad to the edge of C6 is 253 mil. 4. The distance from U1 pin3 pad to the edge of C9 is 255 mil. Bill of Material Ref Des U1 C1 C2, C4, C5 C3 C6 C9 L1 L2 L3 R1 D1 Value 0.1 μF 56 pF 1000 pF 1.8 pF 1.2 pF 18 nH 1.5 pF 0Ω Description High Linearity Amplifier Cap, Chip, 1206, 50 V, 10%, X7R Cap, Chip, 0603, 50 V, 5%, NPO/COG Cap, Chip, 0805, 50 V, 5%, NPO Cap, Chip, 0603, 200 V, ±0.1 pF, NPO/COG Cap, Chip, 0603, 200 V, ±0.1 pF, NPO/COG Ind, Chip, 0603, 5%, Ceramic Core Cap, Chip, 0603, 200 V, ±0.1 pF, NPO/COG Res, 0402, Chip, 5%, 1/16 W No Load Part Zener Diode, SOD-123 Data Sheet: Rev B 02/14/12 © 2012 TriQuint Semiconductor, Inc. - 8 of 14 - Manufacturer TriQuint various various various various various various various various Part Number AH118-89G Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® AH118 ¼ Watt, High Linearity InGaP HBT Amplifier Typical Performance 2110-2170 MHz (AH118-89PCB2140) Frequency MHz Gain [1] Input Return Loss Output Return Loss Output P1dB Output IP3 [2] Channel Power @ -45 dBc ACLR [3] Noise Figure Quiescent Current , Icq Device / Supply Voltage , Vcc 2110 dB dB dB dBm dBm dBc dB mA V 2140 16.2 12.4 15.8 24.7 38.8 16.9 4.8 2170 16.2 12.3 13.3 24.9 39.0 17.0 4.9 160 +5 15.8 10.4 11.2 25.0 38.5 17.2 5.0 Notes 1. Test conditions unless otherwise noted: 25 ºC, +5V, in tuned application circuit. 2. OIP3 is measured at 11 dBm Pout / tone with 1 MHz spacing. 3. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability. Gain vs. Frequency S11 and S22 vs. Frequency 25oC 18 16 15 14 2.12 2.13 2.14 2.15 Frequency (GHz) 2.16 2.17 -5 -10 S11 S22 -15 -20 2.11 2.12 2.14 2.15 2.13 Frequency (GHz) P1dB vs. Frequency 2.16 2.17 35 30 25 6 8 10 12 Output Power / Tone (dBm) 14 16 3GPP WCDMA, TM1+64DPCH, PAR=10.2dB, 5MHz Offset, 25oC -40 2.11GHz 25 2.14GHz 2.17GHz -45 24 ACLR1 (dBc) P1dB (dBm) 2170MHz ACLR1 vs. Output Power vs. Frequency CW, 25oC 26 2140MHz 40 OIP3 (dBm) S11 and S22 (dB) Gain (dB) 1MHz Spacing, 25oC 45 2110MHz 17 13 2.11 OIP3 vs. Output Power vs. Frequency 25oC 0 23 22 -50 -55 21 20 2.11 -60 2.12 2.13 2.14 2.15 Frequency (GHz) Data Sheet: Rev B 02/14/12 © 2012 TriQuint Semiconductor, Inc. 2.16 2.17 11 - 9 of 14 - 12 13 14 15 16 Output Power (dBm) 17 18 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® AH118 ¼ Watt, High Linearity InGaP HBT Amplifier 70 MHz Reference Design Gain Input Return Loss Output Return Loss Output P1dB Output IP3 24.2 dB 17 dB 16 dB +23.6 dBm (+11 dBm / tone, Df=1 MHz) Noise Figure Supply Voltage Current +41 dBm Vcc = +5 V Gain / Return Loss 26 DB(|S(2,1)|) (L) DB(|S(2,2)|) (R) DB(|S(1,1)|) (R) 22 -10 20 -15 18 -20 16 -25 50 60 70 Frequency (MHz) 80 C=1000 pF 5.6 V -5 24 4.8 dB +5 V 160 mA C=100000 pF 0 S11, S22 (dB) 70 MHz Gain (dB) Frequency The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. L=180 nH C=1000 pF NET="AH118" L=47 nH C=1000 pF C=100 pF 90 150 MHz Reference Design (+11 dBm / tone, Df=1 MHz) Noise Figure Supply Voltage Current 23 dB 21 dB 14 dB +23.5 dBm +40 dBm Vcc = +5 V Gain / Return Loss 24 DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) DB(|S(2,1)|) (L) 23 4.9 dB +5 V 160 mA C=100000 pF 0 -5 22 -10 21 -15 20 -20 19 L=82 nH 130 140 150 160 Frequency (MHz) 170 NET="AH118" C=82 pF C=1000 pF L=18 nH -25 120 C=1000 pF 5.6 V The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. S11, S22 (dB) Gain Input Return Loss Output Return Loss Output P1dB Output IP3 150 MHz Gain (dB) Frequency 180 340 MHz Reference Design (+11 dBm / tone, Df=1 MHz) Noise Figure Supply Voltage Current 20.6 dB 14 dB 13 dB +24 dBm +41.4 dBm 5.1 dB +5 V 160 mA Data Sheet: Rev B 02/14/12 © 2012 TriQuint Semiconductor, Inc. Gain / Return Loss 22 DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) +5V 5 C=1e5 pF DB(|S(2,2)|) (R) 0 21 20 -5 19 -10 18 -15 -20 17 260 280 300 320 340 360 Frequency (MHz) 380 400 5.6 V S11, S22 (dB) Gain Input Return Loss Output Return Loss Output P1dB Output IP3 340 MHz Gain (dB) Frequency C=1000 pF The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. L=100 nH C=1000 pF L=8.2 nH R=1.8 Ohm NET="AH118" C=1000 pF L=15 nH C=18 pF C=5.6 pF 420 - 10 of 14 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® AH118 ¼ Watt, High Linearity InGaP HBT Amplifier 450 MHz Reference Design (+11 dBm / tone, Df=1 MHz) Noise Figure Supply Voltage Current 22 dB 15 dB 19 dB +24 dBm +40 dBm Vcc = +5 V Gain / Return Loss 23 DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) 0 DB(|S(2,2)|) (R) 22 5.7 dB +5 V 160 mA C=1e5 pF -5 21 -10 20 -15 19 -20 5.6 V S11, S22 (dB) Gain Input Return Loss Output Return Loss Output P1dB Output IP3 450 MHz Gain (dB) Frequency C=1000 pF The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. C=1000 pF L=22 nH NET="AH118" L=3.3 nH C=1000 pF C=27 pF 18 -25 400 420 440 460 Frequency (MHz) 480 500 2450 MHz Reference Design Gain Input Return Loss Output Return Loss Output P1dB Output IP3 14.4 dB 14 dB 15 dB +25 dBm Supply Voltage Current Gain +5 V 160 mA 14.4 dB (+11 dBm / tone, Df=1 MHz) +38 dBm Gain/ ReturnLoss 16 5 14 Vcc = +5 V 12 -5 10 -10 8 6 2.3 DB(|S(2,1)|) (L) 2.4 Frequency (GHz) DB(|S(2,2)|) (R) 2.5 ID=C2 C=1000 pF The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. -15 DB(|S(1,1)|) (R) ID=C1 C=1e5 pF size 1206 All passive components are of size 0603 unless otherwise noted. 0 S11, S22 (dB) 2450 MHz Gain (dB) Frequency ID=D1 5.6 V Component R1 is shown in the silkscreen but is not used for this configuration. ID=C3 C=56 pF size 0805 L3 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. The center of this component should be placed .170" away from the center of C6. ID=L2 L=5.6 nH ID=L1 L=18 nH size 0805 ID=L3 R=0 Ohm ID=C4 C=56 pF ID=C6 C=1.2 pF -20 2.6 CAP ID=C5 C=56 pF NET="AH118" ID=C7 C=1.2 pF The center of this component should be placed .200" away from pin 3. The center of this component should be placed .050" away from pin 1. 3500 MHz Reference Design (+11 dBm / tone, Df=1 MHz) Noise Figure Supply Voltage Current 11 dB 14 dB 10 dB +23.5 dBm +38.5 dBm 5.0 dB +5 V 160 mA Data Sheet: Rev B 02/14/12 © 2012 TriQuint Semiconductor, Inc. Vcc = +5 V Gain / Return Loss 13 DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) 0 DB(|S(2,2)|) (R) 12 -5 11 -10 10 -15 9 -20 -25 8 3.4 3.45 3.5 Frequency (GHz) 3.55 - 11 of 14 3.6 ID=C1 C=100000 pF size 1206 All passive components are of size 0603 unless otherwise noted. ID=C2 C=1000 pF The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. S11, S22 (dB) Gain Input Return Loss Output Return Loss Output P1dB Output IP3 3500 MHz Gain (dB) Frequency Component R1 is shown in the silkscreen but is not used for this configuration. The center of this component should be placed .170" away from the center of C6. ID=L2 L=6.8 nH ID=C4 C=56 pF ID=C6 C=0.2 pF ID=D1 5.6 V NET="AH118" ID=C3 C=56 pF size 0805 ID=L1 L=18 nH size 0805 ID=C7 C=.8 pF The center of this component should be placed .050" away from pin 1. Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® AH118 ¼ Watt, High Linearity InGaP HBT Amplifier Pin Description GND 4 Pin 1 2 3 4 Symbol RF IN GND RF OUT GND PADDLE 1 2 3 RF IN GND RF OUT Description RF Input. DC voltage present, blocking cap required No electrical connection. Provide an isolated or grounded solder pad for mounting integrity RF Output. DC voltage present, blocking cap required Multiple vias should be employed to minimize inductance and thermal resistance Applications Information PC Board Layout Circuit Board Material: .062” total thickness with a .014” Getek top RF layer, 4 layers (other layers added for rigidity), 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, Refer to http://www.triquint.com/prodserv/more_info/default.aspx?prod_id=AH118 Data Sheet: Rev B 02/14/12 © 2012 TriQuint Semiconductor, Inc. - 12 of 14 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® AH118 ¼ Watt, High Linearity InGaP HBT Amplifier Mechanical Information Package Information and Dimensions This package is lead-free/Green/RoHScompliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. AH118G YXXX-Z The AH118 will be marked with an “AH118G” designator with a lot code marked below the part designator. The “Y” represents the last digit of the year the part was manufactured, the “XXX” is an auto-generated number, and “Z” refers to a wafer number in a lot batch Mounting Configuration All dimensions are in millimeters (inches). Angles are in degrees. Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Data Sheet: Rev B 02/14/12 © 2012 TriQuint Semiconductor, Inc. - 13 of 14 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® AH118 ¼ Watt, High Linearity InGaP HBT Amplifier Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260° ESD Rating: Value: Test: Standard: This part compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). Class 1A Passes between 250 and 500V. Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating Level 3 at +260 °C convection reflow The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC standard J-STD-020. This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) • Antimony Free • TBBP-A (C15H12Br402) Free • PFOS Free • SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.503.615.9000 +1.503.615.8902 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev B 02/14/12 © 2012 TriQuint Semiconductor, Inc. - 14 of 14 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ®