MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS Features • • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves Straight Lead Version in Plastic Sleeves (“1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular TIP31 and TIP32 Series Epoxy Meets UL 94, V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available MARKING DIAGRAMS 4 1 2 MAXIMUM RATINGS 3 Rating Symbol Collector−Emitter Voltage Vdc VCB Emitter−Base Voltage Vdc 40 100 1 2 VEB 5 Vdc Collector Current − Continuous − Peak IC 3 5 Adc Base Current IB 1 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 15 0.12 W W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 1.56 0.012 W W/°C TJ, Tstg −65 to + 150 °C Operating and Storage Junction Temperature Range DPAK−3 CASE 369D STYLE 1 YWW J3xxG 4 40 100 MJD31, MJD32 MJD31C, MJD32C YWW J3xxG Unit VCEO MJD31, MJD32 MJD31C, MJD32C Collector−Base Voltage Max DPAK CASE 369C STYLE 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 Y WW xx G = Year = Work Week = 1, 1C, 2, or 2C = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 8.3 °C/W Thermal Resistance, Junction−to−Ambient* RqJA 80 °C/W TL 260 °C Lead Temperature for Soldering Purposes *These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. 6 1 Publication Order Number: MJD31/D MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit 40 100 − − ICEO − 50 mAdc Collector Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES − 20 mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 1 mAdc 25 10 − 50 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) VCEO(sus) MJD31, MJD32 MJD31C, MJD32C Vdc MJD31, MJD32 MJD31C, MJD32C ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 1 Adc, VCE = 4 Vdc) (IC = 3 Adc, VCE = 4 Vdc) − Collector−Emitter Saturation Voltage (IC = 3 Adc, IB = 375 mAdc) VCE(sat) − 1.2 Vdc Base−Emitter On Voltage (IC = 3 Adc, VCE = 4 Vdc) VBE(on) − 1.8 Vdc Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) fT 3 − MHz Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) hfe 20 − − DYNAMIC CHARACTERISTICS 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. fT = ⎪hfe⎪• ftest. http://onsemi.com 2 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) TYPICAL CHARACTERISTICS VCC +30 V PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 +11 V 1.5 15 TA (SURFACE MOUNT) SCOPE TC 1 10 0.5 5 0 0 25 tr, tf ≤ 10 ns DUTY CYCLE = 1% 50 75 100 T, TEMPERATURE (°C) 125 150 Figure 2. Switching Time Test Circuit 2 TJ = 150°C VCE = 2 V 1 0.7 0.5 100 25°C 70 50 −55 °C 30 10 7 5 0.03 0.3 tr @ VCC = 30 V tr @ VCC = 10 V 0.07 0.05 0.05 0.07 0.1 0.5 0.3 0.7 1 0.03 0.02 0.03 3 td @ VBE(off) = 2 V 0.05 0.07 0.1 0.3 0.5 0.7 3 Figure 4. Turn−On Time 3 2 1.4 TJ = 25°C IB1 = IB2 IC/IB = 10 ts′ = ts − 1/8 tf TJ = 25°C ts′ 1 t, TIME (s) μ 1 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2 V 0.4 tf @ VCC = 30 V 0.7 0.5 0.3 0.2 tf @ VCC = 10 V 0.1 0.07 0.05 VCE(sat) @ IC/IB = 10 0 0.003 0.005 0.01 0.02 0.03 0.05 1 IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain 0.2 IC/IB = 10 TJ = 25°C 0.1 IC, COLLECTOR CURRENT (AMPS) 1.2 −4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA REVERSE ALL POLARITIES FOR PNP. t, TIME (s) μ 300 D1 51 −9 V 500 hFE , DC CURRENT GAIN RB 0 Figure 1. Power Derating V, VOLTAGE (VOLTS) RC 25 ms 0.1 0.2 0.3 0.5 1 0.03 0.03 2 3 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. “On” Voltages Figure 6. Turn−Off Time http://onsemi.com 3 2 3 300 2 TJ = +25°C TJ = 25°C 200 1.6 IC = 0.3 A 1.2 1A CAPACITANCE (pF) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) 3A 0.8 Ceb 70 50 0.4 0 100 1 2 5 10 20 50 100 IB, BASE CURRENT (mA) 200 500 30 0.1 1000 Ccb 0.2 0.3 0.5 1 2 3 5 10 VR, REVERSE VOLTAGE (VOLTS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 7. Collector Saturation Region 1 0.7 0.5 20 30 40 Figure 8. Capacitance D = 0.5 0.3 0.2 0.2 RqJC(t) = r(t) RqJC RqJC = 8.33°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) 0.1 0.1 0.05 0.07 0.05 0.01 0.03 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1k Figure 9. Thermal Response IC, COLLECTOR CURRENT (AMPS) 10 5 3 2 1ms 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. T J(pk) may be calculated from the data in Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100ms 500ms dc WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO TC = 25°C SINGLE PULSE TJ = 150°C MJD31, MJD32 0.01 1.5 2 MJD31C, MJD32C 3 5 7 10 20 30 50 70 100 150 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 10. Active Region Safe Operating Area http://onsemi.com 4 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) ORDERING INFORMATION Package Type Package Shipping † DPAK 369C 75 Units / Rail MJD31CG DPAK (Pb−Free) 369C 75 Units / Rail MJD31C1 DPAK−3 369D 75 Units / Rail MJD31C1G DPAK−3 (Pb−Free) 369D 75 Units / Rail MJD31CRL DPAK 369C 1800 Tape & Reel DPAK (Pb−Free) 369C 1800 Tape & Reel DPAK 369C 2500 Tape & Reel DPAK (Pb−Free) 369C 2500 Tape & Reel DPAK 369C 2500 Tape & Reel DPAK (Pb−Free) 369C 2500 Tape & Reel DPAK 369C 75 Units / Rail MJD32CG DPAK (Pb−Free) 369C 75 Units / Rail MJD32C1 DPAK−3 369D 75 Units / Rail MJD32C1G DPAK−3 (Pb−Free) 369D 75 Units / Rail MJD32CRL DPAK 369C 1800 Tape & Reel DPAK (Pb−Free) 369C 1800 Tape & Reel DPAK 369C 2500 Tape & Reel DPAK (Pb−Free) 369C 2500 Tape & Reel DPAK 369C 1800 Tape & Reel DPAK (Pb−Free) 369C 1800 Tape & Reel DPAK 369C 2500 Tape & Reel DPAK (Pb−Free) 369C 2500 Tape & Reel Device MJD31C MJD31CRLG MJD31CT4 MJD31CT4G MJD31T4 MJD31T4G MJD32C MJD32CRLG MJD32CT4 MJD32CT4G MJD32RL MJD32RLG MJD32T4 MJD32T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− T STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR T http://onsemi.com 7 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MJD31/D