WTE GBP201 2.0a glass passivated bridge rectifier Datasheet

GBP2005 – GBP210
WTE
POWER SEMICONDUCTORS
2.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
!
!
!
!
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Ideal for Printed Circuit Boards
!
A
H
B
+
~
~
-
G
D
K
E
Mechanical Data
!
!
!
!
!
!
GBP
Dim
Min
Max
A
14.25
14.75
B
10.2
10.6
C
3.8
4.7
D
14.25
14.73
E
2.29
—
G
1.17
1.42
H
2.8 x 45°
J
1.14
1.52
K
0.76
0.86
L
0.3
0.64
P
3.56
4.06
All Dimensions in mm
P
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 2.0 grams (approx.)
Mounting Position: Any
Marking: Type Number
P
P
C
J
L
Maximum Ratings and Electrical Characteristics
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @TA = 50°C
Symbol
GBP
2005
GBP
201
GBP
202
GBP
204
GBP
206
GBP
208
GBP
210
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
2.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
50
A
Forward Voltage (per bridge)
VFM
1.1
V
IR
10
1.0
µA
mA
Tj
-55 to +125
°C
TSTG
-55 to +150
°C
Peak Reverse Current
At Rated DC Blocking Voltage
Operating Temperature Range
Storage Temperature Range
GBP2005 – GBP210
@IF = 2.0A
@TA = 25°C
@TA = 100°C
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© 2002 Won-Top Electronics
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
6
5
4
3
2
1
Resistive or
Inductive load
0
0
25
50
75
100
125
100
Tj = 25°C
10
1.0
Pulse width = 300µs
0.1
150
0.0
0.6
1.0
1.8
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Fwd Characteristics, per element
100
Single half-sine-wave
(JEDEC method)
Tj = 25°C
f = 1.0MHz
50
Tj = 25°C
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
T , TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
0.2
40
30
20
10
1
10
1
10
100
1
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
GBP2005 – GBP210
10
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© 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.
Package Type
Shipping Quantity
GBP2005
SIL Bridge
1000 Units/Box
GBP201
SIL Bridge
1000 Units/Box
GBP202
SIL Bridge
1000 Units/Box
GBP204
SIL Bridge
1000 Units/Box
GBP206
SIL Bridge
1000 Units/Box
GBP208
SIL Bridge
1000 Units/Box
GBP210
SIL Bridge
1000 Units/Box
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: [email protected]
Internet: http://www.wontop.com
GBP2005 – GBP210
We power your everyday.
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© 2002 Won-Top Electronics
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