AP6N3R7MT
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
▼ Simple Drive Requirement
▼ Ultra Low On-resistance
BVDSS
RDS(ON)
4
ID
D
60V
3.7mΩ
130A
G
▼ RoHS Compliant & Halogen-Free
D
S
Description
AP6N3R7 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
S
S
S
G
D
D
D
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
Drain Current (Chip), VGS @ 10V
4
Rating
Units
60
V
+20
V
130
A
Drain Current, VGS @ 10V
3
28.8
A
Drain Current, VGS @ 10V
3
23
A
350
A
104
W
5
W
163
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
.
Parameter
Symbol
Total Power Dissipation
3
5
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient 3
25
℃/W
Data and specifications subject to change without notice
1
201601111
AP6N3R7MT
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
60
-
-
V
VGS=10V, ID=20A
-
-
3.7
mΩ
1.5
-
4
V
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=20A
-
50
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=20A
-
75
120
nC
Qgs
Gate-Source Charge
VDS=30V
-
16
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
24
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
20
-
ns
tr
Rise Time
ID=20A
-
66
-
ns
td(off)
Turn-off Delay Time
RG=6Ω
-
62
-
ns
tf
Fall Time
VGS=10V
-
108
-
ns
Ciss
Input Capacitance
VGS=0V
-
4080 6530
pF
Coss
Output Capacitance
VDS=30V
-
2600
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
200
-
pF
Rg
Gate Resistance
-
1.8
-
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.3
V
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
60
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
70
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec; 60oC/W at steady state.
4.Package limitation current is 100A .
5.Starting Tj=25oC , VDD=30V , L=0.3mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6N3R7MT
250
350
10V
9.0V
8.0V
7.0V
V G =6.0V
ID , Drain Current (A)
300
250
T C =150 o C
200
ID , Drain Current (A)
T C =25 o C
200
150
10V
9.0V
8.0V
7.0V
V G =6.0V
150
100
100
50
50
0
0
0
4
8
12
0
16
2
4
6
8
10
12
14
16
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
8
I D =20A
V G =10V
I D =20A
o
T C =25 C
7
5
.
4
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
6
1.2
0.8
3
2
0.4
4
5
6
7
8
9
10
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
2.0
I D =250uA
1.6
12
T j =150 o C
Normalized VGS(th)
IS(A)
16
T j =25 o C
8
4
1.2
0.8
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6N3R7MT
f=1.0MHz
8000
I D =20A
V DS =30V
10
6000
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
4000
4
C oss
2000
2
C rss
0
0
0
20
40
60
80
1
100
21
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
61
81
Fig 8. Typical Capacitance Characteristics
1
10us
Operation in this
area limited by
RDS(ON)
100
10
100us
1
1ms
0.1
T C =25 o C
Single Pulse
10ms
DC
.
Normalized Thermal Response (Rthjc)
1000
ID (A)
41
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
0.01
0.01
0.1
1
10
0.00001
100
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
200
160
ID , Drain Current (A)
ID , Drain Current (A)
V DS =5V
120
Limited by
package
80
160
120
80
T j =150 o C
40
40
T j =25 o C
T j =-55 o C
0
0
25
50
75
100
125
T C , Case Temperature ( o C )
Fig 11. Drain Current v.s. Case
Temperature
150
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP6N3R7MT
8
120
T j =25 o C
PD, Power Dissipation(W)
100
RDS(ON) (mΩ)
6
4
V GS =10V
2
80
60
40
20
0
0
0
30
60
90
120
150
0
50
100
150
o
I D , Drain Current (A)
T C , Case Temperature( C)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
.
5
AP6N3R7MT
MARKING INFORMATION
Part Number
6N3R7
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6