Formosa MM914 High-speed switching diode Datasheet

MM914
FORMOSA MICROSEMI
High-speed switching diode
Features
1.
Small surface mounting type
2.
High reliability
3.
High speed (t rr= 4 ns)
Applications
Extreme fast switches
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25?
Parameter
Test Conditions
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
75
V
DC blocking voltage
VR
75
V
Non repetitive peak forward surge
t=1s
IFSM
1
A
current
t=1µ s
IFSM
4
mA
IF
300
mA
IFAV
200
mA
Power dissipation
PV
500
mW
Junction temperature
Tj
175
?
Tstg
-65~+175
?
Forward current
Average rectified current
Half wave rectification with
resistive load and f>50 MHz
Storage temperature range
Maximum Thermal Resistance
Tj=25?
Parameter
Junction ambient
Test Conditions
Symbol
Value
Unit
on PC board 50mm× 50mm× 1.6mm
RthJ A
500
K/W
FORMOSA MS
1
MM914
FORMOSA MICROSEMI
Electrical Characteristics
Tj=25?
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
1
V
Forward voltage
IF =10mA
VF
Breakdown voltage
IR =100µ A
VR
Peak reverse current
VR =75V
IR
5
µ A
VR =20V, Tj=150?
IR
50
µ A
VR =20V
IR
25
nA
Diode capacitance
VR =0, f=1MHz
CD
4
pF
Reverse recovery time
IF =10mA, VR =6V, i R =0.1× IR , RL=100O
trr
4
ns
100
V
Dimensions in mm
Cathode band
Glass Case
Mini Melf / SOD 80
JEDEC DO 213 AA
FORMOSA MS
2
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