SemiHow HCS60R180E Extremely low switching loss Datasheet

HCS60R180E
600V N-Channel Super Junction MOSFET
Features
Key Parameters
‰ Very Low FOM (RDS(on) X Qg)
‰ Extremely low switching loss
Parameter
Value
Unit
BVDSS @Tj,max
650
V
ID
20
A
RDS(on), max
0.18
ȍ
Qg, Typ
22
nC
‰ Excellent stability and uniformity
‰ 100% Avalanche Tested
Application
Package & Internal Circuit
‰ Telecom Power equipment / Server station
TO-220F
‰ Uninterruptible Power Supply (UPS)
‰ Power Factor Correction (PFC)
‰ TV power & LED Lighting Power
G
D
Absolute Maximum Ratings
Symbol
S
TC=25୅ unless otherwise specified
Parameter
Value
Units
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
ρ30
V
Drain Current
– Continuous (TC = 25୅)
20.0 *
A
Drain Current
– Continuous (TC = 100୅)
12.6 *
A
IDM
Drain Current
– Pulsed
(Note 1)
60.0 *
A
EAS
Single Pulsed Avalanche Energy
(Note 2)
310
mJ
dv/dt
MOSFET dv/dt ruggedness, VDS=0…480V
50
V/ns
dv/dt
Reverse diode dv/dt, VDS=0…480V, IDS”ID
15
V/ns
PD
Power Dissipation
34
W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
୅
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
୅
ID
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJC
Junction-to-Case
--
3.67
RșJA
Junction-to-Ambient
--
62.5
Units
୅/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝;ΒΣ͑ͣͧ͑͢͡
HCS60R180E Super Junction MOSFET
Mar 2016
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 10 A
--
0.15
0.18
Ÿ
VGS = 0 V, ID = 250 Ꮃ
600
--
--
V
VDS = 600 V, VGS = 0 V
--
--
1
Ꮃ
VDS = 480 V, TJ = 125୅
--
--
100
Ꮃ
VGS = ρ30 V, VDS = 0 V
--
--
ρ100
Ꮂ
--
1440
--
Ꮔ
--
105
--
Ꮔ
--
3.9
--
Ꮔ
--
44
--
Ꭸ
--
20
--
Ꭸ
--
85
--
Ꭸ
--
17
--
Ꭸ
--
22
29
nC
--
8
--
nC
--
4
--
nC
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 300 V, ID = 10 A,
RG = 25 Ÿ
VDS = 480 V, ID = 10 A
VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
20
ISM
Pulsed Source-Drain Diode Forward Current
--
--
60
VSD
Source-Drain Diode Forward Voltage
IS = 20 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
367
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 20 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
4.2
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=2.7A, VDD=50V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝;ΒΣ͑ͣͧ͑͢͡
HCS60R180E Super Junction MOSFET
Electrical Characteristics TJ=25 qC
HCS60R180E Super Junction MOSFET
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
VGS, Gate-Source Voltage [V]
12
VDS = 120V
VDS = 300V
VDS = 480V
10
8
6
4
2
Note : ID = 10A
0
0
5
10
15
20
25
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝;ΒΣ͑ͣͧ͑͢͡
(continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
Note :
1. VGS = 0 V
2. ID = 250uA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
* Note :
1. VGS = 10 V
2. ID = 10 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
o
TJ, Junction Temperature [ C]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
20
Operation in This Area
is Limited by R DS(on)
2
10
ID, Drain Current [A]
101
100 Ps
1 ms
100
10 ms
100 ms
* Notes :
1. TC = 25 oC
10-1
10-2 -1
10
100
12
8
4
DC
2. TJ = 150 oC
3. Single Pulse
101
102
0
25
103
50
75
100
125
150
TJ, Junction Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
ZTJC(t), Thermal Response
ID, Drain Current [A]
16
10 Ps
100
0.2
* Notes :
1. ZTJC(t) = 3.67 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.1
0.05
10-1
0.02
PDM
0.01
t1
single pulse
-2
10
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝;ΒΣ͑ͣͧ͑͢͡
HCS60R180E Super Junction MOSFET
Typical Characteristics
HCS60R180E Super Junction MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝;ΒΣ͑ͣͧ͑͢͡
HCS60R180E Super Junction MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝;ΒΣ͑ͣͧ͑͢͡
HCS60R180E Super Junction MOSFET
Package Dimension
{vTYYWmG
±0.20
±0.20
.2
±0
0
2.54±0.20
6.68±0.20
0.70±0.20
12.42±0.20
3.30±0.20
2.76±0.20
1.47max
9.75±0.20
15.87±0.20
ij
0.80±0.20
0.50±0.20
2.54typ
2.54typ
TO-220FM
TO-220F
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