IRFY240 MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 200V 12A Ω 0.19Ω FEATURES 0.89 1.14 2.54 BSC 2.65 2.75 • HERMETICALLY SEALED TO–220 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS TO–220M – Metal Package Pad 1 – Gate Pad 2 – Drain Pad 3 – Source • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE • ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current @ Tcase = 25°C 12A ID Continuous Drain Current @ Tcase = 100°C 7.8A IDM Pulsed Drain Current 48A PD Power Dissipation @ Tcase = 25°C 60W Linear Derating Factor 0.48W/°C TJ , Tstg Operating and Storage Temperature Range –55 to 150°C RθJC Thermal Resistance Junction to Case 2.1°C/W max. RθJA Thermal Resistance Junction to Ambient 80°C/W max. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/95 IRFY240 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ RDS(on) VGS = 0 ID = 1mA Min. Typ. Max. 200 Reference to 25°C V 0.29 V / °C Breakdown Voltage ID = 1mA Static Drain – Source On–State VGS = 10V ID = 7.8A 0.19 Resistance VGS = 10V ID = 12A 0.22 VDS = VGS ID = 250µA 2 VDS ≥ 15V IDS = 7.8A 6.1 VGS = 0 VDS = 0.8BVDSS 25 TJ = 125°C 250 VGS(th) Gate Threshold Voltage 4 Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 1300 Coss Output Capacitance VDS = 25V 400 Crss Reverse Transfer Capacitance f = 1MHz 130 Qg Total Gate Charge Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 12 ISM Pulse Source Current 49 VSD Diode Forward Voltage trr Reverse Recovery Time IS = 12A Qrr Reverse Recovery Charge di / dt ≤ 100A/µs VDD ≤ 50V LD PACKAGE CHARACTERISTICS Internal Drain Inductance LS Internal Source Inductance Semelab plc. ID = 12A nA nC 60 ID = 12A 2.2 10.6 VDS = 0.5BVDSS 14.2 37.6 nC 20 VDD = 100V 152 ID = 12A 58 RG = 9.1Ω IS = 12A µA pF 32 VDS = 0.5BVDSS Ω V (Ω) S(Ω gfs VGS = 10V Unit ns 67 TJ = 25°C VGS = 0 TJ = 25°C (from 6mm down drain lead pad to centre of die) 8.7 (from 6mm down source lead to centre of source bond pad) 8.7 Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. A 1.5 V 500 ns 5.3 µC nH Prelim. 9/95