ON BSS138LT1 Power mosfet 200 ma, 50 v n−channel sot−23 Datasheet

BSS138LT1
Preferred Device
Power MOSFET
200 mA, 50 V
N−Channel SOT−23
Typical applications are DC−DC converters, power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
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200 mA, 50 V
RDS(on) = 3.5 W
Features
• Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for
•
•
N−Channel
3
Low Voltage Applications
Miniature SOT−23 Surface Mount Package Saves Board Space
Pb−Free Packages are Available
1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
50
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 10 ms)
ID
IDM
200
800
Total Power Dissipation @ TA = 25°C
PD
225
mW
Operating and Storage Temperature
Range
TJ, Tstg
− 55 to 150
°C
RqJA
556
°C/W
TL
260
°C
Rating
Thermal Resistance,
Junction−to−Ambient
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds
mA
2
MARKING
DIAGRAM
3
1
2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
J1 M G
G
SOT−23
CASE 318
STYLE 21
1
J1
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Shipping†
Device
Package
BSS138LT1
SOT−23
3000 Tape & Reel
SOT−23
(Pb−Free)
3000 Tape & Reel
SOT−23
10,000 Tape & Reel
SOT−23
(Pb−Free)
10,000 Tape & Reel
BSS138LT1G
BSS138LT3
BSS138LT3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 4
1
Publication Order Number:
BSS138LT1/D
BSS138LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
50
−
−
Vdc
−
−
−
−
0.1
0.5
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
mAdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
±0.1
mAdc
Gate−Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.5
−
1.5
Vdc
Static Drain−to−Source On−Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
−
−
5.6
−
10
3.5
gfs
100
−
−
mmhos
pF
ON CHARACTERISTICS (Note 1)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
W
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
−
40
50
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Coss
−
12
25
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
−
3.5
5.0
td(on)
−
−
20
td(off)
−
−
20
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
ns
BSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
VGS = 3.25 V
0.6
VGS = 3.0 V
0.5
VGS = 2.75 V
0.4
VGS = 2.5 V
0.3
0.2
0.1
0
VDS = 10 V
0.8
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
0.7
0.9
VGS = 3.5 V
TJ = 25°C
− 55°C
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
7
8
9
0
10
0
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
2.2
1.25
ID = 1.0 mA
2
Vgs(th) , VARIANCE (VOLTS)
VGS = 10 V
ID = 0.8 A
1.8
1.6
VGS = 4.5 V
ID = 0.5 A
1.4
1.2
1
1.125
1
0.875
0.8
0.6
−55
−5
45
95
0.75
−55
145
−30
−5
20
45
70
95
120
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On−Resistance Variation with
Temperature
Figure 4. Threshold Voltage Variation
with Temperature
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
25°C
10
VDS = 40 V
TJ = 25°C
8
6
4
ID = 200 mA
2
0
0
500
1000
1500
2000
QT, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
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3
2500
3000
145
BSS138LT1
10
VGS = 2.5 V
9
8
150°C
7
6
5
25°C
4
−55°C
3
2
1
0
0.1
0.05
0.2
0.15
0.25
ID, DRAIN CURRENT (AMPS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
TYPICAL ELECTRICAL CHARACTERISTICS
8
7
5
4
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
150°C
5
4.5
4
3.5
3
25°C
2.5
2
−55°C
1.5
1
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
25°C
3
2
1
−55°C
0
0.2
0.15
0.25
ID, DRAIN CURRENT (AMPS)
0.5
4.5
VGS = 10 V
4
150°C
3.5
3
2.5
25°C
2
−55°C
1.5
1
0
0.05
0.1
ID, DRAIN CURRENT (AMPS)
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
ID, DRAIN CURRENT (AMPS)
Figure 9. On−Resistance versus Drain Current
Figure 8. On−Resistance versus Drain Current
1
I D , DIODE CURRENT (AMPS)
0.1
0.05
Figure 7. On−Resistance versus Drain Current
VGS = 4.5 V
5.5
150°C
6
Figure 6. On−Resistance versus Drain Current
6
VGS = 2.75 V
120
100
TJ = 150°C
0.1
25°C
−55°C
80
60
Ciss
0.01
40
Coss
20
0.001
0
0.2
0.4
0.6
0.8
1.0
0
1.2
Crss
0
5
10
15
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
Figure 11. Capacitance
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4
20
25
BSS138LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BSS138LT1/D
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