Mitsubishi CM400E2G-130H High power switching use insulated type Datasheet

MITSUBISHI HVIGBT MODULES
Revision: B
Prepared by
K.Kurachi
Date
I.Umezaki 24-Feb.-2009
CM400E2G-130H
th
3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM400E2G-130H
● IC ………………………
400 A
● VCES ……………………
6500 V
● 1-element in a Pack (for brake chopper)
● Insulated Type
● AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1048-B
1 of 8
MITSUBISHI HVIGBT MODULES
CM400E2G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
th
3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICM
IE
IEM
Pc
Conditions
Item
VGE = 0 V
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Maximum power dissipation
(Note 3)
Unit
Tj = -40 °C
5800
Tj = +25 °C
6300
Tj = +125 °C
6500
V
VCE = 0V, Tj = 25°C
± 20
V
DC, Tc = 80°C
400
A
Pulse
Emitter current
Ratings
(Note 1)
DC
Pulse
(Note 1)
Tc = 25°C, IGBT part
Viso
Isolation voltage
RMS, sinusoidal, f = 60Hz, t = 1 min.
Ve
Partial discharge extinction voltage
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
800
A
400
A
800
A
5900
W
10200
V
5100
V
Tj
Junction temperature
−40 ~ +150
°C
Top
Operating temperature
−40 ~ +125
°C
Tstg
Storage temperature
−40 ~ +125
°C
tpsc
Maximum short circuit pulse width
10
µs
VCC =4500V, VCE ≤ VCES, VGE =15V, Tj =125°C
ELECTRICAL CHARACTERISTICS
Symbol
Item
Limits
Conditions
Unit
Min
Typ
Max
Tj = 25°C
—
—
7
Tj = 125°C
—
20
60
6.0
7.0
V
mA
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
Gate-emitter threshold voltage
VCE = 10 V, IC = 40 mA, Tj = 25°C
5.0
IGES
Gate leakage current
VGE = VGES, VCE = 0V, Tj = 25°C
−0.5
—
0.5
µA
Cies
Input capacitance
—
82.0
—
nF
Coes
Output capacitance
—
5.0
—
nF
Cres
Reverse transfer capacitance
—
1.4
—
nF
—
6.6
—
µC
Tj = 25°C
—
4.5
—
Tj = 125°C
—
4.6
—
—
1.2
—
µs
—
0.35
—
µs
—
3.0
—
J/P
—
8.2
—
µs
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25°C
VCC = 3600 V, IC = 400 A
VGE = ±15 V, Tj = 25 °C
Qg
Total gate charge
VCE(sat)
Collector-emitter saturation voltage
td(on)
Turn-on delay time
IC = 400 A
(Note 4)
VGE = 15 V
VCC = 3600 V, IC = 400 A
VGE = ±15 V, RG(on) = 15 Ω
V
tr
Turn-on rise time
Eon(10%)
Turn-on switching energy
td(off)
Turn-off delay time
VCC = 3600 V, IC = 400 A
tf
Turn-off fall time
VGE = ±15 V, RG(off) = 50 Ω
—
0.5
—
µs
tf2
Turn-off fall time
Tj = 125 °C, Ls = 170 nH
—
3.1
—
µs
Eoff(10%)
Turn-off switching energy
J/P
Tj = 125 °C, Ls = 170 nH
(Note 5)
(Note 5)
(Note 2)
VEC
Emitter-collector voltage
trr
Reverse recovery time
(Note 2)
Reverse recovery time
(Note 2)
trr2
Qrr
Erec(10%)
(Note 6)
, Inductive load
Inductive load
IE = 400 A
(Note 4)
VGE = 0 V
Reverse recovery charge
Reverse recovery energy
t(IGBT_off) = 60 µs
(Note 2)
(Note 2), (Note 5)
—
2.7
—
Tj = 25 °C
—
4.0
—
Tj = 125 °C
—
3.6
—
—
1.0
—
VCC = 3600 V, IE = 400 A
V
µs
VGE = ±15 V, RG(on) = 15 Ω
—
2.4
—
µs
Tj = 125 °C, Ls = 170 nH
—
740
—
µC
—
1.4
—
J/P
t(IGBT_off) = 60 µs
(Note 6)
, Inductive load
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1048-B
2 of 8
MITSUBISHI HVIGBT MODULES
CM400E2G-130H
th
3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Item
Rth(j-c)Q
Thermal resistance
Rth(j-c)R
Thermal resistance
Rth(c-f)
Contact thermal resistance
Conditions
Limits
Unit
Min
Typ
Max
Junction to Case, IGBT part
—
—
21.0
K/kW
Junction to Case, FWDi part
—
—
33.0
K/kW
Junction to Case, Clamp-Di part
—
—
33.0
K/kW
Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm
—
9.0
—
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Mt
Mounting torque
Ms
Mt
Conditions
Limits
Unit
Min
Typ
Max
M8: Main terminals screw
7.0
—
15.0
N·m
M6: Mounting screw
3.0
—
6.0
N·m
M4: Auxiliary terminals screw
1.0
—
3.0
N·m
—
1.35
—
kg
m
Mass
CTI
Comparative tracking index
600
—
—
—
da
Clearance
26.0
—
—
mm
ds
Creepage distance
56.0
—
—
mm
LP CE
Parasitic stray inductance
Collector to Emitter
—
27.0
—
nH
Anode to Cathode
—
54.0
—
nH
RCC’+EE’
Internal lead resistance
Tc = 25°C, Collector to Emitter
—
0.19
—
mΩ
Tc = 25°C, Anode to Cathode
—
0.38
—
mΩ
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi) and the brake chopper,
anode to cathode clamp diode (Clamp-Di).
Junction temperature (Tj) should not exceed Tjmax rating (150°C).
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
t(IGBT_off) definition is shown as follows.
Note 1.
Note 2.
Note 3.
Note 4.
Note 5.
Note 6.
IC
time
t(IGBT_off)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1048-B
3 of 8
MITSUBISHI HVIGBT MODULES
CM400E2G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
th
3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
90%VGE
VGE
10%VGE
0
VCC
IC
90%IC
90%IC
di
50%IC
10%IC
10%VCE
10%VCE
VCE
td(on)
tr
ton
Eon =
t1
∫
td(off)
t2
10%IC
dt
0
tf2
ic•vce dt
Eoff =
t1
t2
t3
∫
t4
ic•vce dt
t3
tf = (0.9ic − 0.1ic) / (di/dt)
toff = td(off) + tf
t4
Fig. 2 – Definitions of switching times & energies of IGBT part
Qrr = –
IE (IF)
di/dt
∫
t6
VEC (VR)
trr
di
0
10%IE
Erec = –
∫
ie dt
0
t6
ie•vec dt
t5
Irr
dt
0
10%VEC
trr2
0
t5
t6
Fig. 3 – Definitions of reverse recovery charge & energy of FWDi part
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1048-B
4 of 8
MITSUBISHI HVIGBT MODULES
CM400E2G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
th
3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
800
800
Tj = 125°C
VCE = VGE
VGE = 20V
600
VGE = 15V
VGE = 10V
VGE = 12V
400
VGE = 8V
200
Collector Current [A]
Collector Current [A]
600
0
400
Tj = 125°C
Tj = 25°C
200
0
0
1
2
3
4
5
6
7
8
0
Collector - Emitter Voltage [V]
2
4
6
8
10
12
Gate - Emitter Voltage [V]
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
800
800
VGE = 15V
Tj = 25°C
Tj = 125°C
600
Emitter Current [A]
Collector Current [A]
600
400
200
Tj = 125°C
Tj = 25°C
400
200
0
0
0
2
4
6
8
Collector-Emitter Saturation Voltage [V]
0
2
4
6
8
Emitter-Collector Voltage [V]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1048-B
5 of 8
MITSUBISHI HVIGBT MODULES
CM400E2G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
th
3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
1000
VCE = 3600V, IC = 400A
Tj = 25°C
15
Capacitance [nF]
100
Gate-Emitter Voltage [V]
Cies
10
Coes
Cres
1
10
5
0
-5
-10
VGE = 0V, Tj = 25°C
f = 100kHz
0
-15
0.1
1
10
0
100
2
Collector-Emitter Voltage [V]
6
8
10
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
7
8
VCC = 3600V, VGE = ±15V
RG(on) = 15Ω, RG(off) = 50Ω
LS = 170nH, Tj = 125°C
Inductive load
VCC = 3600V, IC = 400A
VGE = ±15V, LS = 170nH
Tj = 125°C, Inductive load
7
Eon
Switching Energies [J/P]
6
Switching Energies [J/P]
4
5
Eoff
4
3
Erec
2
1
6
Eon
5
4
Eoff
3
2
Erec
1
0
0
0
200
400
600
800
1000
Collector Current [A]
0
20
40
60
80
100
Gate resistor [Ohm]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1048-B
6 of 8
MITSUBISHI HVIGBT MODULES
CM400E2G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
th
3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
100
100
Switching Times [µs]
td(on)
1
tf
tr
Irr
10
1000
trr
1
100
0.1
0.01
10
100
10
1000
10
1000
100
Emitter Current [A]
Collector Current [A]
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
Normalized Transient Thermal impedance
1.2
Rth(j-c)Q = 21.0K/kW
Rth(j-c)R = 33.0K/kW
1
0.8
Z
0.6
0.4
th( j − c )
(t ) =
n
⎧
⎪
i⎨
⎪⎩
∑ R 1− exp
i =1
⎛ t ⎞⎫
⎜− ⎟
⎟⎪
⎜
i ⎠⎬
⎝
τ
⎪⎭
Ri [K/kW] :
1
0.0096
2
0.1893
3
0.4044
4
0.3967
τi [sec] :
0.0001
0.0058
0.0602
0.3512
0.2
0
0.001
0.01
0.1
1
10
Time [s]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1048-B
7 of 8
Reverse Recovery Current [A]
Reverse Recovery Time [µs]
td(off)
10
0.1
10000
VCC = 3600V, VGE = ±15V
RG(on) = 15Ω, LS = 170nH
Tj = 125°C, Inductive load
VCC = 3600V, VGE = ±15V
RG(on) = 15Ω, RG(off) = 50Ω
LS = 170nH, Tj = 125°C
Inductive load
MITSUBISHI HVIGBT MODULES
CM400E2G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
th
3 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
1200
10000
VCC ≤ 4500V, VGE = ±15V
RG(on) = 15Ω, RG(off) = 50Ω
Tj = 125°C
VCC ≤ 4500V, VGE = ±15V
Tj = 125°C, RG(off) = 50Ω
8000
Collector Current [A]
Collector Current [A]
1000
800
600
400
6000
4000
2000
200
0
0
0
2000
4000
6000
8000
Collector-Emitter Voltage [V]
0
2000
4000
6000
8000
Collector-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
1200
Reverse Recovery Current [A]
VCC ≤ 4500V, Tj = 125°C
di/dt < 2000A/µs
1000
800
600
400
200
0
0
2000
4000
6000
8000
Collector-Emitter Voltage [V]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1048-B
8 of 8
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