Infineon BSP295 Sipmos small-signal-transistor Datasheet

BSP295
Rev 1.3
SIPMOS Small-Signal-Transistor
Feature
Product Summary
· N-Channel
· Enhancement mode
· dv/dt rated
VDS
60
V
RDS(on)
0.3
W
ID
1.8
A
• Pb-free lead plating; RoHS compliant
PG-SOT-223
4
3
2
1
Type
Package
Tape and Reel Information
Marking
BSP295
PG-SOT-223
L6327: 1000 pcs/reel
BSP295
VPS05163
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
A
TA=25°C
1.8
TA=70°C
1.44
Pulsed drain current
Unit
I D puls
7.2
dv/dt
6
VGS
±20
TA=25°C
Reverse diode dv/dt
kV/µs
IS=1.8A, VDS=40V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Power dissipation
V
Class 1
Ptot
1.8
W
-55... +150
°C
TA=25°C
Operating and storage temperature
T j , Tstg
IEC climatic category; DIN IEC 68-1
55/150/56
Page 1
2007-02-07
BSP295
Rev 1.3
Thermal Characteristics
Symbol
Parameter
Values
Unit
min.
typ.
max.
-
15
25
@ min. footprint
-
80
115
@ 6 cm 2 cooling area 1)
-
48
70
Characteristics
Thermal resistance, junction - soldering point
RthJS
SMD version, device on PCB:
RthJA
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
60
-
-
VGS(th)
0.8
1.1
1.8
Static Characteristics
Drain-source breakdown voltage
V
VGS=0, ID =250µA
Gate threshold voltage, VGS = VDS
ID=400µA
Zero gate voltage drain current
µA
I DSS
VDS=60V, VGS =0, Tj=25°C
-
-
0.1
VDS=60V, VGS =0, Tj=150°C
-
8
50
-
1
10
Gate-source leakage current
I GSS
VGS=20V, VDS=0
Drain-source on-state resistance
nA
W
RDS(on)
VGS=10V, ID=1.8A
-
0.22
0.3
VGS=4.5V, ID=1.8A
-
0.39
0.5
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2007-02-07
BSP295
Rev 1.3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
0.8
1.7
-
S
pF
Dynamic Characteristics
Transconductance
gfs
VDS³2*ID*RDS(on)max,
ID=1.44A
Input capacitance
Ciss
VGS=0, VDS=25V,
-
295
368
Output capacitance
Coss
f=1MHz
-
95
118
Reverse transfer capacitance
Crss
-
45
67
Turn-on delay time
td(on)
VDD=15V, VGS=4.5V,
-
5.4
8.1
Rise time
tr
ID=1.44 A, RG=15W
-
9.9
15
Turn-off delay time
td(off)
-
27
41
Fall time
tf
-
19
28
-
0.9
1.1
-
5.6
8.4
-
14
17
V(plateau) VDD =24V, ID = 1.8 A
-
3.1
3.8
V
IS
-
-
1.8
A
-
-
7.2
ns
Gate Charge Characteristics
Gate to source charge
Q gs
Gate to drain charge
Q gd
Gate charge total
Qg
VDD =24V, ID =1.8A
VDD =24V, ID =1.8A,
nC
VGS =0 to 10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TA=25°C
forward current
Inv. diode direct current, pulsed ISM
Inverse diode forward voltage
VSD
VGS=0, IF = IS
-
0.84
1.3
V
Reverse recovery time
trr
VR=25V, I F=lS ,
-
36
45
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
38
48
nC
Page 3
2007-02-07
BSP295
Rev 1.3
1 Power dissipation
2 Drain current
Ptot = f (TA)
ID = f (TA)
BSP295
1.9
1.9
W
A
1.6
1.6
1.4
1.4
1.2
1.2
ID
P tot
parameter: VGS ³ 10 V
1
1
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
0
20
40
60
80
100
°C
120
0
0
160
BSP295
20
40
60
80
100
120
TA
3 Safe operating area
4 Transient thermal impedance
ID = f ( VDS )
ZthJA = f (tp )
parameter : D = 0 , TA = 25 °C
parameter : D = tp /T
1 BSP295
10
10 2
tp = 150.0µs
/ID
o
S(
BSP295
K/W
S
=
A
160
°C
TA
VD
n)
RD
10 1
0
ID
10
Z thJA
1 ms
10 ms
10 0
D = 0.50
0.20
10
-1
0.10
10 -1
0.05
single pulse
0.02
DC
10 -2 0
10
10
1
0.01
V
10
2
10 -2 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
s
10
4
tp
VDS
Page 4
2007-02-07
BSP295
Rev 1.3
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS)
RDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
parameter: Tj = 25 °C, VGS
3.6
1.8
A 5V
6V
7V
3 10V
W
4.2V
R DS(on)
2.7
3.8V
ID
2.4
2.1
3V
2.4V 2.8V
3.4V
3.8V4.2V
5V
6V
1.4 7V
10V
1.2
1
1.8
3.4V
0.8
1.5
3V
0.6
1.2
0.9
2.8V
0.4
2.4V
0.2
0.6
0.3
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
VDS
A
S
gfs
2.5
1.5
3.6
A
1.5
1
1
0.5
0.5
1.5
2.4
parameter: Tj = 25 °C
2.5
1
1.8
gfs = f(ID)
parameter: Tj = 25 °C
0.5
1.2
8 Typ. forward transconductance
ID = f ( VGS ); VDS³ 2 x ID x RDS(on)max
0
0
0.6
ID
7 Typ. transfer characteristics
ID
0
0
5
2
2.5
3
V
VGS
0
0
4
0.6
1.2
1.8
2.4
3.6
V
ID
Page 5
2007-02-07
BSP295
Rev 1.3
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj )
VGS(th) = f (Tj )
parameter : ID = 1.8 A, VGS = 10 V
parameter: VGS = VDS ; ID = 1 mA
BSP295
W
2.2
0.75
V
98%
1.8
V GS(th)
R DS(on)
0.6
0.55
0.5
0.45
1.6
typ.
1.4
1.2
0.4
0.35
98%
1
2%
0.3
0.8
0.25
typ
0.6
0.2
0.15
0.4
0.1
0.2
0.05
0
-60
-20
20
60
100
°C
0
-60
180
-20
20
60
100
Tj
°C
Tj
160
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD)
parameter: VGS =0, f=1 MHz, Tj = 25 °C
parameter: Tj
10
3
10 1
BSP295
A
Ciss
pF
10 0
C
IF
Coss
10
2
Crss
10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10
1
0
5
10
15
20
V
30
10 -2
0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
VDS
Page 6
2007-02-07
BSP295
Rev 1.3
13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (Tj)
VGS = f (QG ); parameter: VDS ,
par.: ID = 3.9 A, VDD = 25 V, RGS = 25 W
ID = 1.8 A pulsed, Tj = 25 °C
60
16
BSP295
V
mJ
V GS
E AS
12
40
30
10
8
6
20
0.2 VDS max
4
0.5 VDS max
10
0.8 VDS max
2
0
20
40
60
80
100
120
°C
160
0
0
4
8
12
16
nC
24
QG
Tj
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
BSP295
60
V (BR)DSS
V
57
56
55
54
53
52
51
50
49
48
47
46
45
-60
-20
20
60
100
°C
180
Tj
Page 7
2007-02-07
BSP295
Rev 1.3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
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Page 8
2007-02-07
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