Weitron BC848 Npn/pnp dual general purpose transistor Datasheet

BC846BPDW Series
NPN/PNP Dual General Purpose Transistors
P b Lead(Pb)-Free
1
2
3
6 5
1
4
2
4
3
6
5
SOT-363(SC-88)
NPN+PNP
MAXIMUM RATINGS - NPN
Symbol
BC846
BC847
BC848
Unit
Collector-Emitter Voltage
Rating
VCEO
65
45
30
V
Collector-Base Voltage
VCBO
80
50
30
V
Emitter-Base Voltage
VEBO
6.0
6.0
5.0
V
IC
100
100
100
mAdc
BC847
Collector Current - Continuous
MAXIMUM RATINGS - PNP
Symbol
BC846
BC848
Unit
Collector-Emitter Voltage
Rating
VCEO
-65
-45
-30
V
Collector-Base Voltage
VCBO
-80
-50
-30
V
Emitter-Base Voltage
VEBO
-5.0
-5.0
-5.0
V
IC
-100
-100
-100
mAdc
Collector Current - Continuous
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
380
250
mW
3.0
mW/˚C
R θJA
328
˚C/W
Junction Temperature Range
TJ
-55 to +150
˚C
Storage Temperature Range
Tstg
-55 to +150
˚C
Total Device Dissipation
Per Device
FR-5 Board (1)
TA = 25˚C
Derate Above 25˚C
Thermal Resistance Junction to Ambient
1. FR-5 = 1.0 x 0.75 x 0.062 in
Device Marking
BC846BPDW = BB , BC847BPDW = 3F , BC847CPDW = 3G , BC848BPDW = 13K , BC848CPDW = 13L
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BC846BPDW Series
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
65
45
30
—
—
—
—
—
—
80
50
30
—
—
—
—
—
—
80
50
30
—
—
—
—
—
—
6.0
6.0
5.0
—
—
—
—
—
—
—
—
—
—
15
5.0
BC846B, BC847B, BC848B
BC847C, BC848C
—
—
150
270
—
—
BC846B, BC847B, BC848B
BC847C, BC848C
200
420
290
520
475
800
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
Collector–Base Breakdown Voltage
(IC = 10 A)
V(BR)CEO
BC846 Series
BC847 Series
BC848 Series
V
V(BR)CES
BC846 Series
BC847B Only
BC848 Series
V
V(BR)CBO
BC846 Series
BC847 Series
BC848 Series
Emitter–Base Breakdown Voltage
(IE = 1.0 A)
V
V(BR)EBO
BC846 Series
BC847 Series
BC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
V
nA
µA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
hFE
—
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
—
—
—
—
0.25
0.6
V
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
—
—
0.7
0.9
—
—
V
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
—
660
—
700
770
mV
fT
100
—
—
MHz
Cobo
—
—
4.5
pF
NF
—
—
10
dB
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
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BC846BPDW Series
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
–65
–45
–30
—
—
—
—
—
—
–80
–50
–30
—
—
—
—
—
—
–80
–50
–30
—
—
—
—
—
—
–5.0
–5.0
–5.0
—
—
—
—
—
—
—
—
—
—
–15
–4.0
BC846B, BC847B, BC848B
BC847C, BC848C
—
—
150
270
—
—
BC846B, BC847B, BC848B
BC847C, BC848C
200
420
290
520
475
800
—
—
—
—
–0.3
–0.65
—
—
–0.7
–0.9
—
—
–0.6
—
—
—
–0.75
–0.82
fT
100
—
—
MHz
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
Cob
—
—
4.5
pF
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
NF
—
—
10
dB
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
Collector–Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
Collector–Base Breakdown Voltage
(IC = –10 A)
V(BR)CEO
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
V
V(BR)CES
V
V(BR)CBO
BC846 Series
BC847 Series
BC848 Series
Emitter–Base Breakdown Voltage
(IE = –1.0 A)
BC846 Series
BC847 Series
BC848 Series
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current (VCB = –30 V, TA = 150°C)
V
V(BR)EBO
ICBO
V
nA
µA
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µA, VCE = –5.0 V)
(IC = –2.0 mA, VCE = –5.0 V)
hFE
Collector–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VBE(sat)
Base–Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
VBE(on)
—
V
V
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
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BC846BPDW Series
TYPICAL NPN CHARACTERISTICS – BC846
°
°
Figure 2. “On” Voltage
°
°
Figure 1. DC Current Gain
θ
°
θ
°
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
°
°
Figure 5. Capacitance
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Figure 6. Current–Gain – Bandwidth Product
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BC846BPDW Series
TYPICAL PNP CHARACTERISTICS —BC846
°
°
Figure 8. “On” Voltage
°
Figure 7. DC Current Gain
θ
°
°
θ
°
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
°
Figure 11. Capacitance
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Figure 12. Current–Gain – Bandwidth Product
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BC846BPDW Series
TYPICAL NPN CHARACTERISTICS – BC847 SERIES & BC848 SERIES
°
°
Figure 13. Normalized DC Current Gain
Figure 14. “Saturation” and “On” Voltages
°
°
θ
°
°
Figure 15. Collector Saturation Region
Figure 16. Base–Emitter Temperature
Coefficient
°
°
Figure 17. Capacitances
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Figure 18. Current–Gain – Bandwidth Product
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BC846BPDW Series
TYPICAL PNP CHARACTERISTICS — BC847 SERIES & BC848 SERIES
°
°
Figure 20. “Saturation” and “On” Voltages
°
Figure 19. Normalized DC Current Gain
°
°
θ
°
Figure 21. Collector Saturation Region
Figure 22. Base–Emitter Temperature
Coefficient
°
°
Figure 23. Capacitances
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Figure 24. Current–Gain – Bandwidth Product
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BC846BPDW Series
Z JA(t) = r(t) R JA
R JA = 328 C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R JC(t)
Figure 25. Thermal Response
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BC846BPDW Series
SOT-363 Package Outline Dimensions
Unit:mm
A
SOT-363
6
5
4
B C
1
2
D
3
E
H
K
M
L
J
Dim
A
B
C
D
E
H
J
K
L
M
Min
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 REF
0.30
0.40
1.80
2.20
0.10
0.80
1.10
0.25
0.40
0.10
0.25
0.4 mm (min)
0.65 mm 0.65 mm
0.5 mm (min)
1.9 mm
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