Filtronic FPD750SOT343CE Low noise high linearity packaged phemt Datasheet

FPD750SOT343
Datasheet v3.0
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
PACKAGE:
ROHS:
FEATURES (1850MHZ):
•
•
•
•
•
9
0.5 dB N.F.min.
20 dBm Output Power (P1dB)
16.5 dB Small-Signal Gain (SSG)
37 dBm Output IP3
RoHS compliant (Directive 2002/95/EC)
GENERAL DESCRIPTION:
The FPD750SOT343 is a packaged depletion
mode pseudomorphic High Electron Mobility
Transistor (pHEMT). It utilizes a 0.25 µm x 750
µm Schottky barrier Gate. The Filtronic
0.25µm process ensures class-leading noise
performance.
The use of a small footprint
plastic package allows for cost effective
system implementation.
TYPICAL APPLICATIONS:
•
•
•
802.11a,b,g and WiMax LNAs
PCS/Cellular High Linearity LNAs
Other types of wireless infrastructure systems.
TYPICAL PERFORMANCE1:
RF PARAMETER
SYMBOL
CONDITIONS
0.9GHZ 1.85GHZ 2.6GHZ
3.5GHZ
UNITS
Power at 1dB Gain Compression
OP1dB
VDS = 3.3 V; IDS = 40mA
20
19
20
20.5
dBm
Small Signal Gain
SSG
VDS = 3.3 V; IDS = 40mA
22
16.5
14
11
dB
Power-Added Efficiency
PAE
VDS = 3.3 V; IDS = 40mA
50
45
45
50
%
POUT = P1dB
Maximum Stable Gain (|S21/S12|)
MSG
VDS = 3.3 V; IDS = 40mA
24
20
18
16
dB
Noise Figure
N.F.
VDS = 3.3 V; IDS = 40mA
0.5
0.6
0.7
0.8
dB
Output Third-Order Intercept Point
OIP3
VDS = 3.3V; IDS = 40mA
32
31
31
32
VDS = 3.3V; IDS = 80mA
35
37
35
38
POUT = 9 dBm per Tone
dBm
ELECTRICAL SPECIFICATIONS2:
RF/DC PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
Frequency
f
Power at 1dB Gain Compression
P1dB
VDS = 3.3 V; IDS = 40mA
17
dBm
Small Signal Gain
SSG
VDS = 3.3 V; IDS = 40mA
16
dB
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
185
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 0.75 mA
0.7
1.0
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.75 mA
13
16
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.75 mA
13
18
V
Thermal Resistivity (see Notes)
θJC
VDS > 3V
143
°C/W
2.0
230
UNITS
GHz
280
200
mA
mS
1.3
V
Note: 1. Based on measured data taken on applications circuits. 2. All devices are 100% RF and DC tested at
2GHz with ZS = ZL = 50 Ohms 3. TAMBIENT = 22°C
1
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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD750SOT343
Datasheet v3.0
1
ABSOLUTE MAXIMUM RATING :
PARAMETER
SYMBOL
TEST CONDITIONS
ABSOLUTE MAXIMUM
Drain-Source Voltage
VDS
-3V < VGS < -0.5V
6V
Gate-Source Voltage
VGS
0V < VDS < +6V
-3V
Drain-Source Current
IDS
For VDS < 2V
IDss
Gate Current
IG
Forward or reverse current
7.5mA
PIN
VDS = 3.3V
22dBm
Channel Operating Temperature
TCH
Under any acceptable bias state
175°C
Storage Temperature
TSTG
Non-Operating Storage
-55°C to 150°C
PTOT
See De-Rating Note below
1.1W
Comp.
Under any bias conditions
5dB
2 or more Max. Limits
80%
RF Input Power
2
Total Power Dissipation
4
Gain Compression
Simultaneous Combination of Limits
3
Notes:
1
TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
4
Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT,
where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22°C:
PTOT= 1.1 - (1/Θjc) x TPACK
where TPACK= source tab lead temperature above 22°C & Θjc = 143ºC/W
BIASING GUIDELINES:
•
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for
additional information.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage
supply for depletion-mode devices.
For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of
RF gain expansion prior to the onset of compression is normal for this operating point. Class A/B
bias of 25-33% offers an optimised solution for NF and OIP3.
•
•
DC IV Curves FPD750SOT89
0.30
Drain-Source Current (A)
0.25
0.20
VG=-1.50
VG=-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.50V
VG=-0.25V
VG=0V
0.15
0.10
Note:
The recommended method for
measuring IDSS, or any particular IDS, is to set
the Drain-Source voltage (VDS) at 1.3V. This
measurement point avoids the onset of
spurious self-oscillation which would normally
distort the current measurement (this effect has
been filtered from the I-V curves presented
above). Setting the VDS > 1.3V will generally
cause errors in the current measurements,
even in stabilized circuits.
0.05
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
2
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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD750SOT343
Datasheet v3.0
TYPICAL FREQUENCY REPONSE:
MSG & S21 vs Frequency Biased @ 3.3V, 40mA
28
N.F.min vs Frequency Biased @ 3.3V
1.20
S21
1.00
N.F.min (dB)
20
16
Mag S21
&
MSG (dB)
MSG
24
12
8
0.80
0.60
0.40
4
0.20
0
0.00
ID = 80mA
9.5
10.5
6.0
8.5
5.4
7.5
4.8
6.5
4.2
5.5
3.6
4.5
Frequency (GHz)
3.0
3.5
2.4
2.5
1.8
1.5
1.2
0.5
0.6
ID = 40mA
Frequency (GHz)
NOTE: Typical Gain and Noise figure variation against frequency is shown above. The devices were
biased nominally at VDS = 3.3V, IDS = 40mA. The test devices were tuned for minimum noise figure and
maximum gain using tuners at the device input and output ports.
1.85 GHZ:
Power Transfer Characteristic
VDS = 3.3V IDS = 80mA at f = 1.85GHz
23.0
7.00
23.0
21.0
6.00
21.0
19.0
5.00
19.0
5.00
17.0
4.00
17.0
4.00
15.0
3.00
15.0
3.00
13.0
2.00
13.0
2.00
11.0
1.00
11.0
1.00
9.0
0.00
9.0
0.00
7.0
-10.0
-8.0
-6.0
Comp Point
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
Output Power (dBm)
Pout (dBm)
Gain Compression (dB)
Output Power (dBm)
Power Transfer Characteristic
VDS = 3.3V IDS = 40mA at f = 1.85GHz
7.0
-10.0
-1.00
10.0
7.00
Pout (dBm)
-8.0
-6.0
6.00
Comp Point
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
Input Power (dBm)
Input Power (dBm)
NOTE: Typical power transfer curves at two bias conditions are shown above. The data is taken with the
device mounted on evaluation board tuned at 1.85GHz for low noise and gain as shown in the reference
design given on page 6.
3
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Filtronic Compound Semiconductors Ltd
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Email: [email protected]
Website: www.filtronic.com
-1.00
12.0
Gain Compression (dB)
TYPICAL RF PERFORMANCE @
FPD750SOT343
Datasheet v3.0
TYPICAL RF PERFORMANCE @
1.85 GHZ:
Typical Intermodulation Performance
VDS = 3.3V IDS = 80mA at f = 1.85GHz
Typical Intermodulation Performance
VDS = 3.3V IDS = 40mA at f = 1.85GHz
-30
12
3rds (dBc)
8
-50
6
-56
-54
4
-62
-60
2
8
-42
6
-48
4
-11.3
-10.3
-9.3
-8.3
-7.3
-6.3
-5.3
-4.3
3rds (dBc)
-44
-36
-12.3
-38
Pout (dBm)
10
10
2
-32
-3.3
-68
-12.8
-11.8
-10.8
-9.8
Input Power (dBm)
-8.8
-7.8
-6.8
-5.8
-4.9
Input Power (dBm)
NOTE: Typical intermodulation performance is shown above. The data is taken with the device mounted on
evaluation board tuned at 1.85GHz for low noise and gain as shown in the reference design given on page 6.
The FPD750SOT343 has enhanced Intermodulation performance with an OIP3 value of up to P1dB+16dBm.
This effect can be seen when the device is biased at ID=80mA by the bough in the 3rd order product plot line .
NOISE PARAMETERS:
Biased at VDS=3.3V, IDS=40mA
Freq.
(GHz)
0.60
0.90
1.20
1.50
1.80
2.10
2.40
2.70
3.00
3.30
3.60
3.90
4.20
4.50
4.80
5.10
5.40
5.70
6.00
N.F.min
(dB)
0.37
0.40
0.43
0.46
0.49
0.52
0.55
0.58
0.61
0.64
0.67
0.70
0.73
0.76
0.78
0.81
0.84
0.87
0.90
Γopt
Mag
0.770
0.689
0.614
0.546
0.485
0.431
0.383
0.342
0.307
0.280
0.258
0.244
0.236
0.236
0.242
0.254
0.273
0.299
0.332
Angle
12.2
21.2
30.6
40.4
50.6
61.1
72.1
83.4
95.1
107.2
119.8
132.7
146.0
159.6
173.7
-171.9
-157.0
-141.8
-126.1
Biased at VDS=3.3V, IDS=80mA
Freq.
(GHz)
0.60
0.90
1.20
1.50
1.80
2.10
2.40
2.70
3.00
3.30
3.60
3.90
4.20
4.50
4.80
5.10
5.40
5.70
6.00
Rn/50
0.108
0.100
0.092
0.084
0.077
0.069
0.063
0.057
0.053
0.049
0.046
0.043
0.042
0.040
0.040
0.041
0.044
0.050
0.061
N.F.min
(dB)
0.39
0.42
0.46
0.50
0.53
0.57
0.60
0.64
0.68
0.71
0.75
0.79
0.83
0.86
0.90
0.94
0.97
1.01
1.05
Γopt
Mag.
0.732
0.644
0.564
0.492
0.428
0.372
0.324
0.283
0.251
0.227
0.210
0.202
0.201
0.208
0.223
0.247
0.277
0.317
0.364
Angle
11.5
22.1
33.0
44.2
55.9
67.9
80.2
93.0
106.2
119.7
133.6
147.9
162.5
177.5
-167.1
-151.4
-135.2
-118.7
-101.8
Rn/50
0.129
0.115
0.102
0.090
0.079
0.070
0.063
0.057
0.053
0.050
0.049
0.048
0.048
0.049
0.051
0.056
0.065
0.080
0.106
4
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Filtronic Compound Semiconductors Ltd
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Email: [email protected]
Website: www.filtronic.com
-3.9
3rd Order IM Products (dBc)
Output Power (dBm)
Pout (dBm)
14
Output Power (dBm)
12
-24
3rd Order IM Products (dBc)
14
FPD750SOT343
Datasheet v3.0
REFERENCE DESIGN (0.9GHZ):
FREQUENCY
GHZ
0.9
Gain
P1dB
OIP31
N.F.
S11
S22
Vd
Vg
Id
dB
dBm
dBm
dB
dB
dB
V
V
mA
22
20
32
0.5
-5
-10
3.3
-0.4 to -0.6
40
1. OIP3 measured at Pout of 9dBm per
tone
Measured Gain and Return Loss
BOARD LAYOUT:
Vg
Vd
15pF
0.01uF
15pF
+ 1.0uF
+
20O
Lg
33pF
0.01uF
Ld
L1
L2
33pF
0.63"
Q1
1.45"
Component Values
Component
Value
Description
Lg
56nH
LL1608 Toko chip inductor
Ld
56nH
LL1608 Toko chip inductor
L1
15nH
LL1608 Toko chip inductor
L2
4.7nH
LL1608 Toko chip inductor
Eval board material - 31mil thick FR4 with 1/2 Ounce Cu on
both sides
FPD750SOT343 EVAL Board -Vg
Schematic
0.01uF
@ 900MHz
15pF
Vd
1.0uF
0.01uF
15pF
20 Ohm
33pF
56 nH
L1
56 nH
L2
RF OUT
RF IN
D.C. Blocking capacitors are ATC series 600S. A tantalum 1.0µF is used at the drain terminal. All
other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 Ohm Chip resistor from
Vishay is used on the gate D.C. bias line for stability.
5
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Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
33pF
Website: www.filtronic.com
FPD750SOT343
Datasheet v3.0
REFERENCE DESIGN (1.85GHZ):
FREQUENCY
GHZ
1.85
Gain
P1dB
OIP31
N.F.
S11
S22
Vd
Vg
Id
dB
dBm
dBm
dB
dB
dB
V
V
mA
16.5
19
31
0.6
-6
-10
3.3
-0.4 to -0.6
40
1.OIP3 measured at Pout of 9dBm per
tone
Measured Gain and Return Loss
BOARD LAYOUT:
Vg
Vd
15pF
15pF
0.01uF
0.01uF
+ 1.0uF
+
20O
Lg
33pF
Ld
L1
L2
33pF
0.63"
Q1
C2
1.45"
Component Values
Component
Value
Description
Lg
22nH
LL1608 Toko chip inductor
Ld
22nH
LL1608 Toko chip inductor
L1
2.2nH
LL1005 Toko chip inductor
L2
1.8nH
LL1005 Toko chip inductor
C2
1.0pF
FPD750SOT343 EVAL Board -Vg
Schematic
0.01uF
@ 1.85GHz
15pF
Vd
1.0uF
0.01uF
15pF
20 Ohm
33pF
ATC 600S Chip Capacitor
22 nH
L1
RF IN
22 nH
L2
33pF
C2
RF OUT
Eval board material - 31mil thick FR4 with 1/2 Ounce Cu on
both sides
D.C. Blocking capacitors are ATC series 600S. A tantalum 1.0µF is used at the drain terminal. All
other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 Ohm Chip resistor from
Vishay is used on the gate D.C. bias line for stability.
6
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD750SOT343
Datasheet v3.0
REFERENCE DESIGN (2.6GHZ):
FREQUENCY
GHZ
2.5
Gain
P1dB
OIP31
N.F.
S11
S22
Vd
Vg
Id
dB
dBm
dBm
dB
dB
dB
V
V
mA
14.2
20
30.5
0.8
-20
-7
2.6
2.7
14 13.5
21
21
31
31
0.7 0.75
-25 -20
-8
-10
3.3
-0.4 to -0.6
40
1. OIP3 measured at Pout of 9dBm per tone
Measured Gain and Return Loss
BOARD LAYOUT:
Vg
Vd
15pF
0.01uF
15pF
20O
Lg
33pF
+ 1.0uF
+
0.01uF
Ld
L1
C2
33pF
0.63"
Q1
C1
L2
1.45"
Component Values
Component
FPD750SOT343 EVAL Board -Vg
Schematic
0.01uF
Value
Description
Lg
18nH
LL1608 Toko chip inductor
Ld
18nH
LL1608 Toko chip inductor
L1
1.2nH
LL1005 Toko chip inductor
L2
2.7nH
LL1005 Toko chip inductor
C1
1.0pF
ATC 600S Chip Capacitor
C2
1.8pF
ATC 600S Chip Capacitor
2.6GHz
Vd
1.0uF
0.01uF
15pF
15pF
20 Ohm
33pF
RF IN
18nH
L1
18nH
C2
33pF
RF OUT
C1
L2
Eval board material - 31mil thick FR4 with 1/2 Ounce Cu on
both sides
D.C. Blocking capacitors are ATC series 600S. A tantalum 1.0µF is used at the drain terminal. All
other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 Ohm Chip resistor from
Vishay is used on the gate D.C. bias line for stability.
7
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD750SOT343
Datasheet v3.0
REFERENCE DESIGN (3.5GHZ):
FREQUENCY
GHZ
3.5
Gain
P1dB
OIP31
N.F.
S11
S22
Vd
Vg
Id
dB
dBm
dBm
dB
dB
dB
V
V
mA
11
20.5
32
0.75
-11
-11
3.3
-0.4 to -0.6
40
1. OIP3 measured at Pout of 9dBm per
tone
Measured Gain and Return Loss
BOARD LAYOUT:
Vg
Vd
15pF
0.01uF
20O
0.01uF
15pF
Lg
L1
10pF
C1
+ 1.0uF
+
Ld
C2
Q1
10pF
0.63"
L2
1.45"
Component Values
Component
Value
Description
Lg
18nH
LL1608 Toko chip inductor
Ld
18nH
LL1608 Toko chip inductor
L1
1.0nH
0402CS Coil Cr. inductor
L2
2.7nH
0402CS Coil Cr. inductor
C1
0.3pF
ATC 600S Chip Capacitor
ATC 600S Chip Capacitor
C2
0.8pF
Eval board material - 31mil thick Rogers 4003 with
1/2 Ounce Cu on both sides.
FPD750SOT343 EVAL Board -Vg
Schematic
0.01uF
@ 3.5GHz
15pF
Vd
1.0uF
0.01uF
15pF
20 Ohm
10pF
RF IN
18 nH
L1
18 nH
C2
10pF
RF OUT
C1
L2
D.C. Blocking capacitors are ATC series 600S. A tantalum 1.0µF is used at the drain terminal. All
other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 Ohm Chip resistor from
Vishay is used on the gate D.C. bias line for stability.
8
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD750SOT343
Datasheet v3.0
S-PARAMETERS (BIASED @ 3.3V, 40mA)
Freq
(GHz)
0.60
0.90
1.20
1.50
1.80
2.10
2.40
2.70
3.00
3.30
3.60
3.90
4.20
4.50
4.80
5.10
5.40
5.70
6.00
S11
Mag.
0.875
0.788
0.707
0.641
0.590
0.557
0.532
0.515
0.501
0.491
0.484
0.484
0.483
0.489
0.494
0.503
0.515
0.528
0.545
Ang.
-51.0
-72.8
-92.2
-109.4
-124.7
-138.4
-151.0
-162.2
-172.8
178.2
169.6
161.3
153.4
145.3
136.9
128.7
120.5
112.3
104.4
S21
Mag.
12.561
11.024
9.608
8.377
7.354
6.547
5.881
5.341
4.886
4.519
4.202
3.950
3.728
3.525
3.340
3.173
3.020
2.874
2.725
S12
Ang.
139.4
123.3
110.0
98.5
88.5
79.6
71.5
64.0
56.9
50.2
43.6
37.2
30.7
24.1
17.5
11.1
4.5
-2.2
-8.8
Mag.
0.034
0.046
0.057
0.065
0.072
0.079
0.086
0.092
0.099
0.105
0.112
0.118
0.125
0.131
0.137
0.143
0.148
0.153
0.156
S22
Ang.
67.2
59.0
53.0
48.1
44.2
40.6
37.5
34.3
31.2
28.2
24.9
21.5
17.9
14.0
9.8
5.6
1.2
-3.4
-8.0
Mag.
0.294
0.248
0.216
0.186
0.162
0.150
0.138
0.132
0.126
0.119
0.116
0.110
0.107
0.110
0.115
0.125
0.141
0.161
0.185
Ang.
69.0
62.1
57.1
53.2
49.8
46.5
43.5
40.5
37.3
34.3
30.9
27.5
23.9
19.9
15.7
11.5
7.0
2.3
-2.3
Mag.
0.256
0.210
0.180
0.151
0.128
0.115
0.104
0.097
0.090
0.083
0.079
0.073
0.068
0.069
0.071
0.079
0.094
0.113
0.138
Ang.
-40.8
-59.5
-76.2
-91.7
-106.8
-121.3
-133.8
-145.4
-155.7
-164.8
-175.0
176.0
165.7
153.9
142.7
129.9
119.8
110.4
101.6
S-PARAMETERS (BIASED @ 3.3V, 80mA)
Freq
(GHz)
0.60
0.90
1.20
1.50
1.80
2.10
2.40
2.70
3.00
3.30
3.60
3.90
4.20
4.50
4.80
5.10
5.40
5.70
6.00
S11
Mag.
0.852
0.755
0.671
0.605
0.556
0.525
0.502
0.487
0.475
0.465
0.459
0.458
0.459
0.464
0.469
0.479
0.492
0.506
0.524
Ang.
-53.8
-76.0
-95.6
-112.6
-127.8
-141.4
-153.7
-164.7
-175.1
176.1
167.8
159.6
152.1
144.2
136.1
128.2
120.1
112.2
104.4
S21
Mag.
14.400
12.398
10.653
9.200
8.027
7.115
6.372
5.773
5.272
4.868
4.522
4.246
4.006
3.787
3.588
3.408
3.246
3.094
2.937
S12
Ang.
137.0
120.7
107.5
96.4
86.7
78.1
70.3
63.0
56.2
49.6
43.2
37.0
30.6
24.2
17.8
11.5
5.1
-1.5
-8.0
Mag.
0.029
0.039
0.048
0.056
0.063
0.071
0.078
0.085
0.091
0.098
0.105
0.112
0.119
0.126
0.132
0.138
0.144
0.149
0.153
S22
Ang.
-38.6
-55.1
-69.8
-82.8
-96.3
-109.7
-121.0
-132.3
-141.3
-149.7
-159.5
-167.0
-177.9
169.0
154.1
137.9
125.7
114.4
105.2
9
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD750SOT343
Datasheet v3.0
PACKAGE OUTLINE:
(dimensions in millimeters – mm)
SOURCE
DRAIN
GATE
SOURCE
TAPE DIMENSIONS AND PART ORIENTATION
FWYN
FWYN
● Leader tape with empty
Cavities = 350mm(min.)
● Trailer tape with empty
Cavities = 160mm(min.)
● Devices per reel = 3000
10
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD750SOT343
Datasheet v3.0
profile defined within IPC/JEDEC J-STD-020C,
Moisture / Reflow sensitivity classification for
non-hermetic solid state surface mount devices
PCB FOOT PRINT
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters, noise parameters and device
model are available on request.
RELIABILITY:
A MTTF of 4.2 million hours at a channel
temperature of 150°C is achieved for the
process used to manufacture this device.
Units in inches
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
PREFERRED ASSEMBLY INSTRUCTIONS:
ORDERING INFORMATION:
This package is compatible with both lead free
and leaded solder reflow processes as defined
within IPC/JEDEC J-STD-020C. The maximum
package temperature should not exceed
260°C.
HANDLING PRECAUTIONS:
PART NUMBER
DESCRIPTION
FPD750SOT343
Packaged pHEMT
FPD750SOT343E
Lead free Packaged pHEMT
RoHS Compliant Packaged pHEMT
To avoid damage to the devices care should
be exercised during handling.
Proper
Electrostatic Discharge (ESD) precautions
should be observed at all stages of storage,
handling, assembly, and testing.
FPD750SOT343CE
with enhanced passivation
(Recommended for New Designs)
ESD/MSL RATING:
EB750SOT343-BB
0.9 GHz evaluation board
EB750SOT343-BA
1.85 GHz evaluation board
EB750SOT343-BC
2.0 GHz evaluation board
EB750SOT343-BE
2.4 GHz evaluation board
EB750SOT343-BG
2.6 GHz evaluation board
EB750SOT343-AH
3.5 GHz evaluation board
These devices should be treated as Class 1A
(250V - 500V) using the human body model as
defined in JEDEC Standard No. 22-A114.
The device has a MSL rating of Level 1. To
determine this rating, preconditioning was
performed to the device per, the Pb-free solder
11
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com