VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS(on) 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, 30 32 120 128 A A A A 30N50Q 32N50Q 30N50Q 32N50Q PLUS 247TM (IXFK) G (TAB) D TO-264 AA (IXFK) pulse width limited by TJM IAR TC = 25°C 32 A EAR TC = 25°C 45 mJ 1500 mJ 5 V/ns 416 W -55 ... + 150 150 -55 ... + 150 °C °C °C 300 °C 1.13/10 Nm/lb.in. 6 4 g g EAS dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-268 G D G = Gate S = Source l l l Test Conditions VDSS VGS = 0 V, ID = 250 uA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2002 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 l l V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 100 1 µA mA 32N50Q 30N50Q 0.15 0.16 Ω Ω S D = Drain TAB = Drain Features l Symbol (TAB) IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l PLUS 247TM package for clip or spring mounting Space savings High power density 98604D (06/02) IXFK 30N50Q IXFX 30N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25 Note 1 28 S 3950 pF 640 pF Crss 210 pF td(on) 35 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 18 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 42 ns td(off) RG = 2 Ω (External), 75 ns 20 ns 150 nC 26 nC 85 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.3 RthJC 0.15 RthCK Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. t rr QRM K/W IF = 25A, -di/dt = 100 A/µs, VR = 100 V 32 A 128 A 1.5 V 250 ns 0.75 µC 7.5 A IRM Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXFK 32N50Q IXFX 32N50Q PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFK 30N50Q IXFX 30N50Q Figure 1. Output Characteristics at 25OC 80 50 TJ = 125OC VGS= 9V 8V 7V 40 ID - Amperes 60 ID - Amperes Figure 2. Output Characteristics at 125OC VGS=10V 9V 8V 7V TJ = 25OC 70 IXFK 32N50Q IXFX 32N50Q 6V 50 40 30 6V 30 5V 20 20 10 5V 10 4V 0 0 4 8 12 16 0 20 0 4 8 VDS - Volts 16 20 VDS - Volts Figure 4. RDS(on) normalized to 15A/25OC vs. TJ Figure 3. RDS(on) normalized to 15A/25OC vs. ID 2.8 2.8 VGS = 10V VGS = 10V 2.4 RDS(ON) - Normalized RDS(ON) - Normalized 12 Tj=1250 C 2.0 1.6 Tj=250 C 1.2 10 20 30 40 50 ID = 32A 2.0 ID = 16A 1.6 1.2 0.8 25 0.8 0 2.4 60 50 75 100 125 150 TJ - Degrees C ID - Amperes Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves 40 50 IXF_32N50Q 40 IXF_30N50Q ID - Amperes ID - Amperes 32 24 16 20 TJ = 25oC TJ = 125oC 8 10 0 -50 30 -25 0 25 50 75 TC - Degrees C © 2002 IXYS All rights reserved 100 125 150 0 2 3 4 VGS - Volts 5 6 IXFK 30N50Q IXFX 30N50Q Figure 7. Gate Charge Figure 8. Capacitance Curves 14 10000 Vds=300V ID=16A IG=10mA 10 F = 1MHz Ciss Capacitance - pF 12 VGS - Volts IXFK 32N50Q IXFX 32N50Q 8 6 4 Coss 1000 Crss 2 0 100 0 50 100 150 200 250 0 Gate Charge - nC 5 10 15 20 25 VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 VGS= 0V ID - Amperes 80 60 TJ=125OC 40 20 TJ=25OC 0 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance 0.40 R(th)JC - K/W 0.20 0.10 0.08 0.06 0.04 0.02 0.01 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1