AVAGO MGA-17516 Low noise, high linearity match pair low noise amplifier Datasheet

MGA-17516
Low Noise, High Linearity Match Pair Low Noise Amplifier
Data Sheet
Description
Features
Avago Technologies’ MGA-17516 is an economical,
easy-to-use GaAs MMIC match pair Low Noise Amplifier
(LNA). The LNA has low noise and high linearity achieved
through the use of Avago Technologies’ proprietary
0.25um GaAs Enhancement-mode pHEMT process. It is
housed in a miniature 4.0 x 4.0 x 0.85mm3 16-pin QuadFlat-Non-Lead (QFN) package. The compact footprint and
low profile coupled with low noise, high gain and high
linearity make the MGA-17516 an ideal choice as a low
noise amplifier for cellular infrastructure for GSM, CDMA
and TDS-CDMA applications. This device is applicable to
both Single and Balance mode. It is designed for optimum
use from 1.7GHz to 2.7GHz. For optimum performance at
lower frequency from 500MHz to 1.7GHz, the MGA-16516
is recommended. Both MGA-17516 and MGA-16516 share
the same package and pinout.
x 4.0 x 4.0 x 0.85 mm3 16-lead QFN
TOP VIEW
BOTTOM VIEW
Note:
Package marking provides orientation and identification
“17516” = Device Code
“YYWW“ = Year and Work Week
“XXXX” = Last 4 digit of Device Lot Number
x GaAs E-pHEMT Technology[1]
x Low cost small package size: 4.0x4.0x0.85 mm3
x Excellent uniformity in product specifications
x Tape-and-Reel packaging option available
Specifications
1.85GHz; 5V, 50mA (typ) per section
x 17.4 dB Gain
x 0.46 dB Noise Figure
x 16.2 dBm Input IP3
Applications
Pin 13
Pin 14
Pin 16
Pin 16
GND
Pin 8
Pin 7
Pin 6
Pin 5
Pin 12
Pin 11
Pin 10
Pin 9
x High linearity performance
x 21 dBm Output Power at 1dB gain compression
Pin Configuration and Package Marking
17516
YYWW
XXXX
x Low noise figure
x Low noise amplifier for cellular infrastructure for GSM,
CDMA and TDS-CDMA.
Pin 1
Pin 2
Pin 3
Pin 4
x Other ultra low noise application.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 40 V
ESD Human Body Model = 350 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
[4]
[3]
[2]
[1]
Pin Configuration
[16]
[15]
[14]
[13]
[9]
[10]
[11]
[12]
[5]
[6]
[7]
[8]
Pin
Use
1
Not Used
2
Not Used
3
Not Used
4
Not Used
5
RFin1
6
Not Used
7
Not Used
8
RFin2
9
Not Used
10
Not Used
11
Not Used
12
Not Used
13
RFout2
14
Not Used
15
Not Used
16
RFout1
Simplified Schematic
Vgg1
Ca7
Vdd1
Ra1
Ca5
Ca11
Ra4
[1]
[2]
[3]
Cb7
Rb1
Vgg2
C2
RFout a
C4
RFout b
L4
L3
Cb5
Ca9
[12]
C3
[16]
[15]
[14]
[13]
[11]
RFin b
[5]
[6]
[7]
[8]
[9]
C1
L2
[10]
RFin a
[4]
L1
Rb4 Cb9
Vdd2
Cb11
Note:
x Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
2
Absolute Maximum Rating [2] TA = 25°C
Symbol
Parameter
Units
Absolute Max.
Thermal Resistance [3]
Vdd
Device Voltage, RF output to ground
V
5.5
Vgg
Gate Voltage
V
1
(Vdd = 5.0V, Idd = 50mA per channel),
Tjc = 49.4°C/W per channel
Pin
CW RF Input Power
(Vdd = 5.0, Idd = 50mA)
dBm
15
Idd
Device Current,
RFout to ground per channel
mA
100
Pdiss
Total Power Dissipation [4]
W
1
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Notes:
2. Operation of this device in excess of any of
these limits may cause permanent damage.
3. Thermal resistance measured using Infra-Red
Measurement Technique with both channels
turned on hence Idd_total=100mA.
4. Power dissipation with both channels turned
on. Board temperature TB is 25°C. Derate at
20mW/°C for TB>100°C.
Electrical Specifications [7-10]
RF performance at TA = 25°C, Vdd =5V, Idd = 50mA, 1.85 GHz and 1.95 GHz given for each RF channel, measured on demo
board in Figure 5 with component list in Table1 for 1.85GHz matching.
Symbol
Parameter and Test Condition
Vgg
Operational Gate Voltage, Idd=50mA
Gain
Gain
IIP3 [8]
Input Third Order Intercept Point
NF [9]
Noise Figure
OP1dB
Output Power at 1dB Gain Compression
IRL
Input Return Loss, 50Ω source
ORL
Output Return Loss, 50Ω load
REV ISOL
Reverse Isolation
ISOL1-2
Isolation between RFin1 and RFin2
Frequency (GHz)
Units
Min.
Typ.
Max.
V
0.40
0.53
0.65
1.85
dB
1.95
dB
17.4
15.5
16.8
13.5
17
1.85
dBm
1.95
dBm
1.85
dB
0.46
1.95
dB
0.50
1.85
dBm
21
1.95
dBm
21
1.85
dB
6
1.95
dB
6.3
1.85
dB
15
1.95
dB
15
1.85
dB
26
1.95
dB
26
18.5
16.2
1.85
dB
38
1.95
dB
38
0.75
Notes:
7. Measurements at 1.85 GHz obtained using demo board described in Figure 1.
8. IIP3 test condition:
a. FRF1 = 1.85 GHz, FRF2 = 1.851 GHz with input power of -15dBm per tone.
b. FRF1 = 1.95 GHz, FRF2 = 1.951GHz with input power of -15dBm per tone.
9. For NF data, board losses of the input have not been de-embedded.
10. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note for more details.
3
Product Consistency Distribution Charts
Mean : 0.53
Min : 0.40
Max : 0.65
Figure 1. Vgg @ 1.95GHz, 5V, 50mA
Mean = 0.53
Mean : 0.50
Max : 0.75
Figure 2. Noise Figure @ 1.95GHz, 5V, 50mA
Mean = 0.50
Mean : 17.0
Min : 13.5
Figure 3. IIP3 @ 1.95GHz, 5V, 50mA
Mean = 17.0
Mean : 16.8
Min : 15.5
Max : 18.5
Figure 4. Gain @ 1.95GHz, 5V, 50mA
Mean = 16.8
Notes:
1. Distribution data samples size is 500 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits. Circuit losses have not been de-embedded from actual measurement.
4
Demo Board Layout
– Recommended PCB material is 10 mils Rogers RO4350.
– Suggested component values may vary according to
layout and PCB material.
Figure 5. Demo Board Layout Diagram
Demo Board Schematic
Vgg1
Table 1. Component list for 1.85GHz matching.
Vdd1
Ca11
Ca7
Ra1
Ra4
Ca5
C1
RFin a
C3
L2
C2
[5]
[16]
[6]
[15]
[7]
[14]
[8]
[13]
C4
[9]
[10]
[11]
[12]
RFin b
Ca9
[4]
[3]
[2]
[1]
L1
L3
Cb5
L4
Rb1
Rb4
Cb11
Cb7
Vgg2
Vdd2
Figure 6. Demo Board Schematic Diagram
5
Cb9
RFout a
RFout b
Part
Size
Value
Part Number
C1, C2
0402
1000pF (Murata)
GRM155R71H102KA01
C3, C4
0402
1000pF (Murata)
GRM155R71H102KA01
Ca7, Ca11
0805
4.7uF (Murata)
GRM21BR60J475KA11L
Cb7, Cb11
0805
4.7uF (Murata)
GRM21BR60J475KA11L
Ca5, Ca9
0402
9pF (Murata)
GJM1555C1H9R0CB01
Cb5, Cb9
0402
9pF (Murata)
GJM1555C1H9R0CB01
Ra1, Rb1
0402
4.3: (Rohm)
MCR01MZSJ4R3
Ra4, Rb4
0402
9.1: (Rohm)
MCRO1MZSJ9R1
L1, L3
0402
9nH (Coilcraft)
0402CS-9N0XJLU
L2, L4
0402
8.2nH (Toko)
LLP1005-FH8N2C
MGA-17516 Typical Performance
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Fmin (dB)
Fmin (dB)
RF performance for each RF channel at TA = 25°C, Vdd = 5V, Idd = 50mA unless otherwise stated. OIP3 is measured with
input power of -15dBm per tone.
40
50
Idd (mA)
60
20
18
16
14
12
10
8
6
4
2
0
50
Idd (mA)
60
14
12
10
8
6
4
2
50
Idd (mA)
0
60
40
40
35
35
30
30
25
25
20
15
20
15
10
10
5
5
40
50
Idd (mA)
60
Figure 11. OIP3 vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 1.85GHz
40
Figure 10. Gain vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 2GHz
OIP3 (dBm)
OIP3 (dBm)
60
16
Figure 9. Gain vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 1.85GHz
6
50
Idd (mA)
18
40
0
40
Figure 8. Fmin vs Idd at 5V at 2GHz
Gain (dB)
Gain (dB)
Figure 7. Fmin vs Idd at 5V at 1.85GHz
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
40
50
Idd (mA)
60
Figure 12. OIP3 vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 2GHz
MGA-17516 Typical Performance
24
22
20
18
16
14
12
10
8
6
4
2
0
OP1dB (dBm)
OP1dB (dBm)
RF performance for each RF channel at TA = 25°C, Vdd =5V, Idd = 50mA unless otherwise stated. OIP3 is measured with
input power of -15dBm per tone.
40
50
Idd (mA)
60
1.6
100
1.4
90
1.2
80
1
70
0.8
0.6
Idd=40mA
Idd=50mA
Idd=60mA
0.2
0
1.7
1.85
2
2.4
Frequency (GHz)
2.6
Vgg=0.52
Vgg=0.54
Vgg=0.56
Vgg=0.58
Vgg=0.60
Vgg=0.62
Vgg=0.64
60
50
20
1
1.5
2
2.5
3
Vdd (V)
3.5
4
4.5
5
Figure 16. I-V curve
1.60
1.40
1.20
Fmin (dB)
Gain (dB)
60
30
3.5
Figure 15. Fmin vs Frequency and Idd at 5V
1.00
0.80
0.60
-40°C
25°C
85°C
0.40
1.7
1.85
1.9
-40 °C
25 °C
85 °C
0.20
0.00
2
2.4
2.5
2.6
3.5
Frequency (GHz)
Figure 17. Gain vs Frequency and Temperature tuned for Optimum OIP3 and
Fmin at 5V 50mA
7
50
Idd (mA)
40
0.4
20
18
16
14
12
10
8
6
4
2
0
40
Figure 14. OP1dB vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 2GHz
Idd (mA)
Fmin (dB)
Figure 13. OP1dB vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 1.85GHz
24
22
20
18
16
14
12
10
8
6
4
2
0
1.7
1.85
2
2.4
Frequency (GHz)
2.6
3.5
Figure 18. Fmin vs Frequency and Temperature tuned for Optimum OIP3 and
Fmin at 5V 50mA
MGA-17516 Typical Performance
45
24
22
20
18
16
14
12
10
8
6
4
2
0
40
35
OIP3 (dBm)
OP1dB (dBm)
RF performance for each RF channel at TA = 25°C, Vdd = 5V, Idd = 50mA unless otherwise stated. OIP3 is measured with
input power of -15dBm per tone.
30
25
20
15
-40°C
25°C
85°C
1.7
1.85
1.9
2
2.4
2.5
Frequency (GHz)
2.6
3.5
Figure 19. OP1dB vs Frequency and Temperature for Optimum OIP3 and Fmin
at 5V 50mA
10
-40°C
25°C
85°C
5
0
1.7
1.85
1.9
2
2.4
2.5
Frequency (GHz)
2.6
3.5
Figure 20. OIP3 vs Frequency and Temperature for Optimum OIP3 and Fmin
at 5V 50mA
Below is the table showing the MGA-17516 Reflection Coefficient Parameters tuned for Maximum OIP3, Vdd=5V,
Idd=50mA.
Gamma Load position
Frequency(GHz)
Magnitude
Angle
MAX OIP3 (dBm)
P1dB (dBm)
1.70
0.402
3.5
36.6
19.7
1.85
0.104
40.1
35.1
21.6
1.90
0.512
-9.4
37.6
18.5
2.00
0.153
44.0
34.9
20.5
2.40
0.369
3.5
38.5
20.1
2.50
0.170
143.3
34.7
20.5
2.60
0.566
40.0
37.5
20.0
3.50
0.352
178.8
35.3
21.4
8
[1]
[2]
[14]
[8]
[13]
[12]
[15]
[7]
[11]
[16]
[10]
[5]
[6]
[9]
Figure 21.
[3]
RFout
reference plane
[4]
RFin
reference plane
Notes:
1. The Maximum OIP3 values are calculated based on Load pull
measurements on approximately 100 different impedances using
Maury’s Load pull test system.
2. Measurements are conducted on 0.010 inch thick ROGER 4350. The
input reference plane is at the end of the RFin pin and the output
reference plane is at the end of the RFout pin as shown in Figure 21.
3. Gamma Load for maximum OIP3 with biasing 3V50mA, 3.5V 50mA,
4V 50mA, 4.5V 50mA, 5V 40mA, 5V 50mA and 5V 60mA from 500 MHz
to 3.5 GHz are available upon request.
MGA-17516 Typical Performance
20
18
16
14
12
10
8
6
4
2
0
20
Reverse Isolation (dB)
Gain (dB)
RF performance at TA = 25°C, Vdd = 5V, Idd = 50mA, given for each RF channel, measured on demo board in Figure 5 with
component list in Table1 for 1.85GHz matching. OIP3 is measured with input power of -15dBm per tone.
7
16
6
14
Output Return Loss (dB)
Input Return Loss (dB)
18
5
4
3
2
0
Channel A
Channel B
1.6 1.7 1.8 1.9
2
1.6 1.7 1.8 1.9
12
10
8
6
4
0
Channel A
Channel B
1.6 1.7 1.8 1.9
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7
Frequency (GHz)
Figure 25. Output Return Loss vs Frequency and channel
24
20
20
16
16
IIP3 (dBm)
24
12
12
8
8
Channel A
Channel B
4
0
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7
Frequency (GHz)
2
2.1 2.2 2.3 2.4 2.5 2.6 2.7
Frequency (GHz)
Figure 24. Input Return Loss vs Frequency and channel
OP1dB (dBm)
Channel A
Channel B
Figure 23. Reverse Isolation vs Frequency and channel
8
1
1.6 1.7 1.8 1.9
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7
Frequency (GHz)
Figure 26. OP1dB vs Frequency and channel
9
8
0
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7
Frequency (GHz)
Figure 22. Gain vs Frequency and channel
12
4
Channel A
Channel B
1.6 1.7 1.8 1.9
16
Channel A
Channel B
4
0
1.6 1.7 1.8 1.9
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7
Frequency (GHz)
Figure 27. IIP3 vs Frequency and channel
MGA-17516 Typical Performance
RF performance at TA = 25°C, Vdd = 5V, Idd = 50mA, given for each RF channel, measured on demo board in Figure 5 with
component list in Table1 for 1.85GHz matching. OIP3 is measured with input power of -15dBm per tone.
30
IRL
ORL
Gain
REV ISOL
25
IRL, ORL, Gain and REV ISOL (dB)
IRL, ORL, Gain and REV ISOL (dB)
30
20
15
10
5
0
1
2
3
4
Frequency (GHz)
5
15
10
5
Figure 29. Input Return Loss, Output Return Loss, Gain, Reverse Isolation vs
Frequency for channel B
5
4
3
NF (dB)
K-Factor
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency (GHz)
6
Figure 28. Input Return Loss, Output Return Loss, Gain, Reverse Isolation vs
Frequency for channel A
2
1
Channel A
Channel B
0
2
4
6
8
10 12 14
Frequency (GHz)
Figure 30. K-Factor vs Frequency and channel
10
25
0
0
0
IRL
ORL
Gain
REV ISOL
16
18
20
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Channel A
0.1
Channel B
0
1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70
Frequency (GHz)
Figure 31. NF vs Frequency and channel
MGA-17516 Typical Scattering Parameters, Vdd = 5V, Idd = 50mA
Freq
GHz
S11
S21
S12
S22
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.98
-13.0
27.46
23.61
165.1
0.005
86.7
0.39
-25.4
0.5
0.80
-61.6
25.03
17.84
130.3
0.024
58.9
0.26
-57.7
0.9
0.66
-94.7
22.46
13.28
106.8
0.034
47.8
0.19
-87.4
1.0
0.64
-99.7
21.88
12.41
102.5
0.036
45.5
0.18
-90.8
1.5
0.548
-127.9
19.20
9.12
82.6
0.045
38.2
0.13
-125.0
1.9
0.52
-145.4
17.41
7.42
69.6
0.052
33.5
0.12
-155.1
2.0
0.51
-149.2
17.01
7.08
66.6
0.054
31.6
0.12
-162.2
2.5
0.49
-166.2
15.16
5.73
52.7
0.062
25.3
0.14
166.1
3.0
0.48
179.6
13.51
4.74
39.7
0.070
18.6
0.17
144.0
4.0
0.48
157.6
10.90
3.51
16.4
0.085
5.3
0.24
115.5
5.0
0.48
138.2
8.78
2.75
-6.4
0.099
-10.4
0.30
87.1
6.0
0.47
119.7
6.85
2.20
-26.9
0.111
-24.9
0.40
71.2
7.0
0.46
93.9
5.05
1.79
-49.2
0.119
-42.0
0.51
50.6
8.0
0.49
71.3
3.14
1.44
-70.0
0.122
-58.5
0.62
33.4
9.0
0.53
58.2
1.36
1.17
-87.5
0.123
-72.2
0.66
19.2
10.0
0.55
52.8
-0.10
0.99
-102.4
0.127
-84.0
0.69
6.6
11.0
0.56
47.2
-1.41
0.85
-116.8
0.129
-95.3
0.71
-5.9
12.0
0.54
35.1
-2.64
0.74
-131.9
0.131
-107.7
0.76
-15.2
13.0
0.55
18.1
-4.09
0.63
-146.8
0.127
-120.3
0.81
-21.5
14.0
0.59
4.6
-5.34
0.54
-160.4
0.126
-132.0
0.83
-26.4
15.0
0.63
3.3
-6.26
0.49
-172.8
0.127
-142.7
0.82
-36.3
16.0
0.65
7.5
-6.83
0.46
174.6
0.133
-153.4
0.80
-51.0
17.0
0.63
11.0
-7.35
0.43
162.7
0.139
-164.2
0.80
-64.3
18.0
0.62
4.9
-7.88
0.40
151.5
0.145
-174.1
0.82
-66.9
19.0
0.61
-7.4
-8.37
0.38
139.9
0.150
174.7
0.83
-65.0
20.0
0.65
-20.8
-9.02
0.35
126.5
0.150
162.4
0.81
-66.9
11
[1]
[2]
[14]
[8]
[13]
[12]
[15]
[7]
[11]
[16]
[10]
[5]
[6]
[9]
Figure 32.
[3]
RFout
reference plane
[4]
RFin
reference plane
Typical Noise Parameters, Vdd = 5V, Idd = 50mA
Part Number Ordering Information
Freq
GHz
Fmin
*opt
*opt
dB
Mag.
Ang.
0.5
0.32
0.56
-18.64
0.7
0.32
0.48
-0.51
0.064
0.9
0.32
0.35
7.71
0.064
1.7
0.39
0.31
24.36
0.066
1.85
0.41
0.29
61.77
0.050
2.0
0.45
0.19
68.44
0.049
2.4
0.52
0.19
95.09
0.047
2.6
0.57
0.23
113.84
0.047
3.5
0.78
0.28
153089
0.037
Part Number
No. of Devices
Container
Rn/50
MGA-17516-BLKG
100
Antistatic Bag
0.069
MGA-17516-TR1G
3000
Tape/reel
Notes:
1. The Fmin values are based on noise figure measurements at 100
different impedances using Focus source pull test system. From
these measurements a true Fmin is calculated.
2. Scattering and noise parameters are measured on 10 mils thick
ROGER 4350 with total board thickness of 62 mils. The input reference
plane is at the end of the RFin pin and the output reference plane is at
the end of the RFout pin as shown in Figure 32.
3. S2P file with scattering and noise parameters for biasing 3V 50mA,
3.5V 50mA, 4V 50mA, 4.5V 50mA, 5V 40mA and 5V 60mA are available
upon request.
SLP4X4 Package Dimension
Pin 1 Dot
by marking
2.70 ± 0.05
Exp.DAP
0.203 Ref.
4.00 ± 0.10
PIN #1 IDENTIFICATION
CHAMFER 0.30 x 45º
0.40 ± 0.05
4.00 ± 0.10
17516
YYWW
XXXX
0.30 ± 0.05
2.70 ± 0.05
Exp.DAP
0.65 Bsc
0.00 - 0.05
1.95
Ref.
0.85 ± 0.10
TOP VIEW
SIDE VIEW
Notes:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold ash and metal burr.
12
BOTTOM VIEW
PCB Land Pattern and Stencil Design
4.00
2.70
3.96
2.16
0.65
2.16
3.96
2.70
4.00
0.65
0.40
0.36
0.30
0.27
Stencil Opening
Land Pattern
2.70
2.16
2.16
2.70
4.00
3.96
0.65
0.36
0.40
0.27
0.30
Combination of Land Pattern & Stencil Opening
Notes:
1. All dimensions are in millimeters.
2. 4 mil stencil thickness recommended
13
Device Orientation
REEL
USER FEED DIRECTION
17516
YYWW
XXXX
CARRIER
TAPE
USER
FEED
DIRECTION
17516
YYWW
XXXX
17516
YYWW
XXXX
TOP VIEW
END VIEW
COVER
TAPE
Tape Dimensions
∅ 1.50 + .10
8.0 ±0.10
2.00 ±0.05
1.75 ±0.10
4.0 ±0.10
+
+
+
+
5.50 ±.05
12.00
+0.30/-0.10
∅ 1.50 +0.25
.279 ±0.02
10º MAX.
10º MAX.
1.13 ±0.10
4.25 ±0.10
Ao
14
Ko
4.25 ±0.10
Bo
Reel Dimension - 7 Inch
A
B
ØE
ØD
SIDE VIEW
BACK VIEW
F
SPECIFICATION
TAPE
WIDTH
A
MAX
B
+1.5–0.0
C1
±0.5
ØD
±0.5
ØE
(max)
F
(min)
ØG
±0.2
ØH
(min)
12mm
18.00
12.4
4.40
55.0
178
1.50
13.50
20.20
G
FRONT VIEW
C1
TAPE SLOT
PLANE VIEW
15
Note: Surface resistivity to be <1012 Ohms/square
ARBOR HOLE
Reel Dimension - 13 Inch
ESD Label
(See Below)
RECYCLE SYMBOL
M
DETAIL “X”
EMBOSSED LINE X2
90.0mm length
LINES 147.0mm AWAY FROM CENTER POINT
EMBOSSED ‘M’ 5.0mm height
FRONT VIEW
11.90–15.40**
13.20±0.50*
Ø20.2
RECYCLE SYMBOL
(MIN.)
+0.5
Ø13.0 –0.2
DETAIL “X”
2.00±0.5
0100.00±0.50
M
SLOT 5.00±0.50
BACK VIEW
For product information and a complete list of distributors, please go to our web site:
16.40”
MAX.
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2010 Avago Technologies. All rights reserved.
AV02-1981EN - August 13, 2010
0331.50 MAX.
DETAIL “X”