ON MBRF20200-CT Schottky barrier rectifier 20 amperes, 200 volt Datasheet

MBRF20200CT
Preferred Device
SWITCHMODEt
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low−voltage, high−frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
•
•
•
•
•
•
•
•
•
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Matched Dual Die Construction
High Junction Temperature Capability
High dv/dt Capability
Guardring for Stress Protection
Epoxy Meets UL 94 V−0 @ 0.125 in
Electrically Isolated. No Isolation Hardware Required.
Pb−Free Package is Available*
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SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 200 VOLTS
1
2
3
ISOLATED TO−220
CASE 221D
STYLE 3
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
1
2
3
Leads are Readily Solderable
MARKING DIAGRAM
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
AYWW
B20200G
AKA
A
Y
WW
B20200
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Polarity Designator
ORDERING INFORMATION
Device
Package
Shipping
MBRF20200CT
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
MBRF20200CTG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
August, 2008 − Rev. 7
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBRF20200CT/D
MBRF20200CT
MAXIMUM RATINGS (Per Leg)
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
200
V
IF(AV)
10
20
A
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 125°C
Per Leg
Per Package
Peak Repetitive Forward Current, Per Leg
IFRM
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(Rated VR, Square Wave, 20 kHz) TC = 90°C
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
1.0
A
TJ, Tstg
−65 to +150
°C
dv/dt
10,000
V/ms
Operating Junction Temperature and Storage Temperature
Voltage Rate of Change (Rated VR)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Rating
Symbol
Value
Unit
RqJC
3.5
°C/W
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
ELECTRICAL CHARACTERISTICS (Per Leg)
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 10 Amp, TC = 25°C)
(iF = 10 Amp, TC = 125°C)
(iF = 20 Amp, TC = 25°C)
(iF = 20 Amp, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TC = 25°C)
(Rated dc Voltage, TC = 125°C)
iR
V
0.9
0.8
1.0
0.9
mA
1.0
50
DYNAMIC CHARACTERISTICS (Per Leg)
Capacitance (VR = − 5.0 V, TC = 25°C, Freq. = 1.0 MHz)
CT
500
pF
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
100
10,000
TJ = 1505C
70
1,000
IR , REVERSE CURRENT ( μ A)
IF, INSTANEOUS FORWARD CURRENT (AMP)
50
TJ = 150°C
20
TJ = 125°C
10
7
TJ = 1255C
100
TJ = 1005C
10
1
0.1
TJ = 100°C
5
TJ = 255C
0.01
0
TJ = 25°C
40
60
80
100
120
140
160
180 200
VR, REVERSE CURRENT (VOLTS)
2
1
20
Figure 2. Typical Reverse Current (Per Leg)
0.2
0.4
0.6
0.8
vF, INSTANTANEOUS VOLTAGE (VOLTS)
1
Figure 1. Typical Forward Voltage (Per Leg)
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2
MBRF20200CT
TEST CONDITION FOR ISOLATION TEST*
FULLY ISOLATED PACKAGE
LEADS
HEATSINK
0.110, MIN
Figure 3. Mounting Position
*Measurement made between leads and heatsink with all leads shorted together.
MOUNTING INFORMATION
CLIP
HEATSIN
K
Clip−Mounted
Figure 4. Typical Mounting Technique
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3
MBRF20200CT
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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MBRF20200CT/D
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