Kexin BAR81W Silicon rf switching diode Datasheet

Diodes
SMD Type
Silicon RF Switching Diode
BAR81W
SOT-343
Unit: mm
Features
Design for use in shunt configuration
High shunt signal isolation
Low shunt insertion loss
Absolute Maxim um Ratings Ta = 25
Param eter
Sym bol
Value
Unit
VR
30
V
IF
100
mA
P tot
100
mW
Diode reverse voltage
Forward current
Total power dissipation, T S = 103
Tj
150
Operating tem perature range
T op
-55 to + 125
Storage tem perature range
T stg
-55 to + 150
Junction tem perature
Junction - am bient
1)
Junction - soldering point
R th JA
200
K/W
R th JS
120
K/W
Note
1.Package m ounted on alum ina 15m m
16.7m m
0.7m m
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Condition
Reverse current
IR
VR = 20 V
Forward voltage
VF
IF = 100 mA
Diode capacitance
CT
Forward resistance
rf
Series inductance
trr
Min
Typ
0.93
VR = 1 V, f = 1 MHz
0.6
VR = 3 V, f = 1 MHz
0.57
IF = 5 mA, f = 100 MHz
0.7
0.15
Max
Unit
20
nA
1
V
pF
nH
Marking
Marking
BBs
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