To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. 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BCR5AS-12B Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0451-0400 Rev.4.00 Dec 19, 2008 Features • Non-Insulated Type • Planar Passivation Type • IT(RMS) : 5 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 30 mA Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 4 12 3 2, 4 3 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 Applications Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, control of household equipment such as washing machine, and other general purpose control applications Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125°C will be supplied. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 REJ03G0451-0400 Rev.4.00 Dec 19, 2008 Page 1 of 7 Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V BCR5AS-12B (The product guaranteed maximum junction temperature of 150°C) Parameter RMS on-state current Symbol IT(RMS) Ratings 5 Unit A Surge on-state current ITSM 50 A I2 t 10.4 A2s PGM PG(AV) VGM IGM Tj Tstg — 3 0.3 10 0.3 – 40 to +150 – 40 to +150 0.26 W W V A °C °C g Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.8 Unit mA V Gate non-trigger voltage VFGT I VRGT I VRGT III IFGT I IRGT I IRGT III VGD — — — — — — 0.2/0.1 — — — — — — — 1.5 1.5 1.5 30 30 30 — V V V mA mA mA V Thermal resistance Rth(j-c) — — 3.0 °C/W Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 5/1 — — V/µs Tj = 125°C/150°C I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine full wave Note3 360° conduction, Tc = 128°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Critical-rate of rise of off-state Note4 commutating voltage I II III I II III Test conditions Tj = 150°C, VDRM applied Tc = 25°C, ITM = 7 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured on the T2 tab. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –2.5 A/ms 3. Peak off-state voltage VD = 400 V REJ03G0451-0400 Rev.4.00 Dec 19, 2008 Page 2 of 7 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR5AS-12B (The product guaranteed maximum junction temperature of 150°C) Performance Curves 100 7 5 90 3 2 101 Tj = 150°C 7 5 3 2 100 7 5 Tj = 25°C 10–1 0.5 1.0 1.5 2.5 3.0 3.5 80 70 60 50 40 30 20 10 0 100 4.0 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V 101 7 5 3 VGT = 1.5V 2 100 7 5 3 2 2.0 PGM = 3W PG(AV) = 0.3W IGM = 2A IFGT I IRGT I IRGT III 10–1 7 VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) 5 3 2 Gate Voltage (V) Surge On-State Current (A) 102 3 2 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Rated Surge On-State Current 103 7 5 3 2 Typical Example IRGT III IRGT I 102 7 5 3 2 IFGT I 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) REJ03G0451-0400 Rev.4.00 Dec 19, 2008 Page 3 of 7 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR5AS-12B (The product guaranteed maximum junction temperature of 150°C) Allowable Case Temperature vs. RMS On-State Current 160 7 140 6 360° Conduction Resistive, 5 inductive loads 4 3 2 1 0 0 1 2 3 4 5 6 7 8 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 1 2 3 4 7 8 Repetitive Peak Off-State Current vs. Junction Temperature Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 100 80 60 40 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS On-State Current (A) 106 7 5 3 2 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Latching Current vs. Junction Temperature 103 Typical Example 101 7 5 4 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) REJ03G0451-0400 Rev.4.00 Dec 19, 2008 Page 4 of 7 Latching Current (mA) VD = 12V Distribution Typical Example 105 Holding Current vs. Junction Temperature Holding Current (mA) 6 Allowable Ambient Temperature vs. RMS On-State Current 120 102 7 5 4 3 2 5 RMS On-State Current (A) 140 0 Curves apply regardless of conduction angle RMS On-State Current (A) 160 Ambient Temperature (°C) Case Temperature (°C) 8 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 7 5 3 2 102 7 5 3 2 T2+, G+ Typical Example T2–, G– Distribution T2+, G– Typical Example 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Commutation Characteristics (Tj=125°C) 160 Typical Example Tj = 150°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) BCR5AS-12B (The product guaranteed maximum junction temperature of 150°C) 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 I Quadrant Minimum Characteristics Value 3 2 100 7 0 10 Rate of Rise of Off-State Voltage (V/µs) 101 7 5 Typical Example Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz III Quadrant I Quadrant 3 2 100 7 0 10 Minimum Characteristics Value 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) REJ03G0451-0400 Rev.4.00 Dec 19, 2008 Page 5 of 7 2 3 5 7 101 2 3 5 7 102 Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time III Quadrant Rate of Decay of On-State Commutating Current (A/ms) Commutation Characteristics (Tj=150°C) 7 5 Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz 103 7 5 4 3 2 Typical Example IRGT III IRGT I 102 7 5 4 3 2 101 0 10 IFGT I 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) BCR5AS-12B (The product guaranteed maximum junction temperature of 150°C) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 A 6V 330Ω V Test Procedure I V A V 330Ω Test Procedure II 6Ω 6V R1 A 6V 330Ω Test Procedure III REJ03G0451-0400 Rev.4.00 Dec 19, 2008 Page 6 of 7 C0 R0 C1 = 0.1 to 0.47µF C0 = 0.1µF R0 = 100Ω R1 = 47 to 100Ω BCR5AS-12B (The product guaranteed maximum junction temperature of 150°C) Package Dimensions Previous Code 1Max Unit: mm 2.3 0.5 ± 0.2 0.1 ± 0.1 2.5Min 6.1 ± 0.2 6.6 5.3 ± 0.2 0.76 ± 0.2 MASS[Typ.] 0.32g 1.4 ± 0.2 RENESAS Code PRSS0004ZG-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.76 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Plastic Magazine (Tube) Type name – T +Direction (1 or 2) +3 Standard order code example BCR5AS-12B-T13 Type name BCR5AS-12B Quantity 3000 75 Standard order code Note : Please confirm the specification about the shipping in detail. REJ03G0451-0400 Rev.4.00 Dec 19, 2008 Page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. 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