Diodes FMMT6517 Sot23 npn silicon planar high voltage transistor Datasheet

SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – NOVEMBER 1995
FEATURES
* 350 Volt VCEO
* Gain of 15 at IC=100mA
FMMT6517
✪
E
C
APPLICATIONS
* SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS
COMPLEMENTARY TYPE PARTMARKING DETAIL -
B
FMMT6520
517
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
V
Collector-Base Voltage
VCBO
350
Collector-Emitter Voltage
VCEO
350
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb= 25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Breakdown Voltages
V(BR)CBO
V(BR)CEO
V(BR)EBO
MAX.
UNIT
CONDITIONS.
350
V
IC=100µA, IE=0
350
V
IC=1mA, IB=0*
5
V
IE=10µA, IC=0
ICBO
50
nA
VCB=250V, IE=0
IEBO
50
nA
VEB=5V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
0.3
0.35
0.5
1.0
V
V
V
V
IC=10mA, IB=1mA*
IC=20mA, IB=2mA*
IC=30mA, IB=3mA*
IC=50mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.80
0.85
0.90
V
V
V
IC=10mA, IB=1mA*
IC=20mA, IB=2mA*
IC=30mA, IB=3mA*
Base-Emitter Turn-On
Voltage
VBE(on)
2.0
V
IC=100mA, VCE=10V*
Static Forward Current
Transfer Ratio
hFE
Output Capacitance
Cobo
Transition Frequency
fT
Cut-Off Currents
20
30
30
20
15
IC=1mA, VCE=10V
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
200
200
6
50
pF
VCB=20V, f=1MHz
MHz
IC=10mA, VCE=20V, f=20MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 171
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