ON MJD243T4G Complementary silicon plastic power transistor dpak-3 for surface mount application Datasheet

MJD243 (NPN),
MJD253 (PNP)
Preferred Device
Complementary Silicon
Plastic Power Transistor
DPAK−3 for Surface Mount Applications
http://onsemi.com
Designed for low voltage, low−power, high−gain audio amplifier
applications.
Features
• Collector−Emitter Sustaining Voltage −
•
•
•
•
•
•
•
•
•
VCEO(sus) = 100 Vdc (Min) @ IC
= 10 mAdc
High DC Current Gain −
hFE = 40 (Min) @ IC
= 200 mAdc
= 15 (Min) @ IC = 1.0 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 0.3 Vdc (Max) @ IC
= 500 mAdc
= 0.6 Vdc (Max) @ IC = 1.0 Adc
High Current−Gain − Bandwidth Product −
fT = 40 MHz (Min) @ IC
= 100 mAdc
Annular Construction for Low Leakage −
ICBO = 100 nAdc @ Rated VCB
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Pb−Free Packages are Available
4.0 A, 100 V, 12.5 W
POWER TRANSISTOR
4
4
1 2
Base 1
Collector 2
Emitter 3
3
DPAK−3
CASE 369D
STYLE 1
DPAK−3
CASE 369C
STYLE 1
MARKING DIAGRAMS
YWW
J253G
Y
WW
x
G
YWW
J2x3G
= Year
= Work Week
= 4 or 5
= Pb−Free Package
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 10
1
Publication Order Number:
MJD243/D
MJD243 (NPN), MJD253 (PNP)
MAXIMUM RATINGS
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Rating
Symbol
Value
Unit
VCB
100
Vdc
VCEO
100
Vdc
VEB
7.0
Vdc
IC
4.0
8.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
12.5
0.1
W
W/°C
Total Device Dissipation @ TA = 25°C (Note 1)
Derate above 25°C
PD
1.4
0.011
W
W/°C
TJ, Tstg
−65 to + 150
°C
Symbol
Value
Unit
RqJC
RqJA
10
89.3
°C/W
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
−Continuous
−Peak
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient (Note 2)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. When surface mounted on minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
100
−
−
−
100
100
−
100
40
15
180
−
−
−
0.3
0.6
−
1.8
−
1.5
40
−
−
50
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TJ = 125°C)
ICBO
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
DC Current Gain (Note 3)
(IC = 200 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
Collector−Emitter Saturation Voltage (Note 3)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage (Note 3)
(IC = 2.0 Adc, IB = 200 mAdc)
VBE(sat)
Base−Emitter On Voltage (Note 3)
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
Vdc
nAdc
mAdc
nAdc
−
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2.
3.
4.
MHz
Cob
When surface mounted on minimum pad sizes recommended.
Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
fT = ⎪hFE⎪• ftest.
http://onsemi.com
2
pF
MJD243 (NPN), MJD253 (PNP)
10
IC, COLLECTOR CURRENT (AMPS)
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
2 20
1.5 15
TA (SURFACE MOUNT)
1 10
TC
0.5
500ms
5
100ms
1ms
2
1
5ms
0.5
0.2
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
0.1
0.05
5
0.02
0
0
0.01
25
dc
T, TEMPERATURE (°C)
2
5
10
20
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Power Derating
Figure 2. Active Region Maximum
Safe Operating Area
50
75
100
125
150
1
100
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the
transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on T J(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided T J(pk) v 150°C. T J(pk) may be calculated from the data in Figure 3. At high case
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown.
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.02
D = 0.5
0.2
0.1
RqJC(t) = r(t) qJC
RqJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
0.05
0.02
0.01
0 (SINGLE PULSE)
0.05
0.1
0.2
0.5
1
2
t, TIME (ms)
5
Figure 3. Thermal Response
http://onsemi.com
3
10
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
20
50
100
200
MJD243 (NPN), MJD253 (PNP)
NPN
MJD243
PNP
MJD253
300
200
200
TJ = 150°C
VCE = 1.0 V
VCE = 2.0 V
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
500
25°C
100
70
50
−55 °C
30
20
10
7.0
5.0
0.04 0.06
0.1
0.2
1.0
0.4 0.6
IC, COLLECTOR CURRENT (AMP)
2.0
25°C
−55 °C
30
20
10
7.0
5.0
3.0
2.0
0.04 0.06
4.0
VCE = 1.0 V
VCE = 2.0 V
TJ = 150°C
100
70
50
0.1
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 4. DC Current Gain
1.4
1.4
TJ = 25°C
1.2
1.2
1.0
1.0
0.8
0.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
IC/IB = 10
0.4
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 1.0 V
0.6
0.4
IC/IB = 10
5.0
5.0
0.2
0.2
VCE(sat)
0
0.04 0.06
0.1
VCE(sat)
0.2
0.4 0.6
1.0
2.0
0
0.04 0.06
4.0
0.1
IC, COLLECTOR CURRENT (AMP)
0.2
0.4
0.6
1.0
2.0
4.0
2.0
4.0
IC, COLLECTOR CURRENT (AMP)
−1.0
25°C to 150°C
−1.5
−2.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 5. “On” Voltages
qVB FOR VBE
−2.5
0.04 0.06
0.1
−55 °C to 25°C
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
+2.5
+2.0
*APPLIES FOR IC/IB ≤ hFE/3
+1.5
+1.0
+0.5
25°C to 150°C
*qVC FOR VCE(sat)
0
−55 °C to 25°C
−0.5
−1.0
−1.5
25°C to 150°C
qVB FOR VBE
−2.5
0.04 0.06
4.0
−55 °C to 25°C
−2.0
0.1
0.2
0.4
0.6
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Temperature Coefficients
http://onsemi.com
4
MJD243 (NPN), MJD253 (PNP)
VCC
+30 V
1K
RC
25 ms
+11 V
SCOPE
RB
t, TIME (ns)
D1
51
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
tr
100
0
−9.0 V
500
300
200
−4 V
50
30
20
td
10
5
3
2
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
1
0.01
NPN MJD243
PNP MJD253
0.02 0.03 0.05 0.1
0.2 0.3 0.5
1
2
IC, COLLECTOR CURRENT (AMPS)
10K
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
TJ = 25°C
C, CAPACITANCE (pF)
ts
1K
500
300
200
100
100
Cib
70
50
30
Cob
20
tf
MJD243 (NPN)
MJD253 (PNP)
NPN MJD243
PNP MJD253
0.2 0.3 0.5
1
2
0.02 0.03 0.05 0.1
IC, COLLECTOR CURRENT (AMPS)
3
5
10
1.0
10
2.0
3.0
5.0 7.0 10
20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Turn−Off Time
Figure 10. Capacitance
200
TJ = 25°C
C, CAPACITANCE (pF)
t, TIME (ns)
5
200
5K
3K
2K
10
0.01
3
Figure 8. Turn−On Time
Figure 7. Switching Time Test Circuit
50
30
20
VCC = 30 V
IC/IB = 10
TJ = 25°C
100
Cib
70
50
30
20
10
Cob
1
2
3
5
7 10
20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
http://onsemi.com
5
50
70 100
50 70 100
MJD243 (NPN), MJD253 (PNP)
ORDERING INFORMATION
Package Type
Package
Shipping †
DPAK−3
369C
75 Units / Rail
MJD243G
DPAK−3
(Pb−Free)
369C
75 Units / Rail
MJD243T4
DPAK−3
369C
2500 / Tape & Reel
DPAK−3
(Pb−Free)
369C
2500 / Tape & Reel
DPAK−3
369D
75 Units / Rail
DPAK−3
(Pb−Free)
369D
75 Units / Rail
DPAK−3
369C
2500 / Tape & Reel
DPAK−3
(Pb−Free)
369C
2500 / Tape & Reel
Device
MJD243
MJD243T4G
MJD253−1
MJD253−1G
MJD253T4
MJD253T4G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
6
MJD243 (NPN), MJD253 (PNP)
PACKAGE DIMENSIONS
DPAK−3
CASE 369C
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
MJD243 (NPN), MJD253 (PNP)
PACKAGE DIMENSIONS
DPAK−3 (SINGLE GAUGE)
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
3 PL
0.13 (0.005)
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
T
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJD243/D
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