Transistors IC SMD Type NPN General Purpose Amplifier MMBT5088,MMBT5089 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 NPN general purpose amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol MMBT5088 MMBT5089 Unit Collector-emitter voltage Parameter VCE0 30 25 V Collector-base voltage VCBO 35 30 V Emitter-base voltage VEBO 4.5 V Collector current IC 100 mA Junction temperature Tj 150 Storage temperature Tstg Total device dissipation Derate above 25 -55 to +150 PD 625 5.0 Thermal resistance, junction to case RèJC 83.3 Thermal resistance, junction to ambient RèJA 200 350 2.8 mW mW/ /W 357 /W www.kexin.com.cn 1 Transistors IC SMD Type MMBT5088,MMBT5089 Electrical Characteristics Ta = 25 unless otherwise noted Parameter Symbol MMBT5088 Collector-emitter breakdown voltage V(BR)CEO Testconditons IC = 1.0 mA, IB = 0 MMBT5089 MMBT5088 Collector-base breakdown voltage MMBT5088 V(BR)CBO ICBO IEBO MMBT5088 DC current gain IC = 100 ìA, IE = 0 Unit V 35 V hFE VCB = 20 V, IE = 0 50 nA VCB = 15 V, IE = 0 50 nA VEB = 3.0 V, IC = 0 50 nA VEB = 4.5 V, IC = 0 100 nA IC = 100 ìA, VCE = 5.0 V MMBT5089 300 900 400 1200 Collector-emitter saturation voltage VCE(sat) IC =10 mA, IB = 1.0 mA 0.5 V Base-emitter saturation voltage VBE(on) IC =10 mA, VCE = 5.0 V 0.8 V Current gain - bandwidth product fT IC = 500 ìA, VCE = 5.0mA,f = 20 MHz 50 MHz Collector-base capacitance Ccb VCB = 5.0 V,IE = 0, f = 100 KHz 4.0 pF Emitter-base capacitance Ceb VBE = 0.5 V,IC = 0, f = 100 KHz 10 pF hfe IC = 1.0 mA, VCE = 5.0 V, f = 1.0 KHz Small-signal current gain MMBT5088 MMBT5089 MMBT5088 Noise figure MMBT5089 hFE Classification 2 Max 30 MMBT5089 Emitter-base cut-off current Typ 30 25 MMBT5089 Collector-cutoff current Min TYPE MMBT5088 MMBT5089 Marking 1Q 1R www.kexin.com.cn NF IC = 100 ìA, VCE = 5.0 V, Rs = 10KÙ, f = 10 Hz to 15.7kHz 350 1400 450 1800 3.0 dB 2.0 dB