MGCHIP MDF1921TH Single n-channel trench mosfet 100v, 60a, 4.8m(ohm) Datasheet

Single N-channel Trench MOSFET 100V, 60A, 4.8mΩ
General Description
Features
The MDF1921 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDF1921 is suitable device for Synchronous
Rectification for Server / Adapter and general purpose
applications.
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VDS = 100V
ID = 60A @VGS = 10V
RDS(ON)
< 4.8 mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
D
G
S
TO-220F
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Symbol
Rating
Unit
VDSS
100
V
VGSS
±20
V
o
TC=25 C
Continuous Drain Current (1)
60
ID
o
TC=100 C
38
Pulsed Drain Current
IDM
o
TC=25 C
Power Dissipation
A
240
36
PD
TC=100oC
W
15
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
EAS
200
TJ, Tstg
-55~150
Symbol
Rating
RθJA
62.5
RθJC
3.5
mJ
o
C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
(1)
Thermal Resistance, Junction-to-Case
Mar. 2014. Version 1.1
1
Unit
o
C/W
MagnaChip Semiconductor Ltd.
MDF1921– Single N-Channel Trench MOSFET 100V
MDF1921
Part Number
Temp. Range
Package
Packing
RoHS Status
MDF1921TH
-55~150oC
TO-220F
Tube
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
100
-
-
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
2.0
2.9
4.0
V
Drain Cut-Off Current
IDSS
VDS = 80V, VGS = 0V
-
-
1.0
Gate Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
-
±0.1
RDS(ON)
VGS = 10V, ID = 50A
-
4.5
4.8
mΩ
gfs
VDS = 10V, ID = 50A
-
120
-
S
-
100
-
-
27
-
-
26
-
-
6750
-
-
50
-
Drain-Source ON Resistance
Forward Transconductance
μA
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
VDS = 50V, ID = 50A,
VGS = 10V
VDS = 40V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
-
1300
-
Turn-On Delay Time
td(on)
-
30.4
-
-
28.8
-
-
93.0
-
-
34.2
-
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = 10V, VDS = 50V,
ID = 50A , RG = 3.0Ω
tf
nC
pF
ns
Rg
f=1 MHz
-
2.5
-
Ω
Source-Drain Diode Forward Voltage
VSD
IS = 50A, VGS = 0V
-
0.9
1.2
V
Body Diode Reverse Recovery Time
trr
-
73
ns
Body Diode Reverse Recovery Charge
Qrr
-
150
nC
Gate Resistance
Drain-Source Body Diode Characteristics
IF = 50A, dl/dt = 100A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. EAS is tested at starting Tj = 25℃, L = 1 mH, IAS = 20 A, VGS = 10V.
Mar. 2014. Version 1.1
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MagnaChip Semiconductor Ltd.
MDF1921– Single N-Channel Trench MOSFET 100V
Ordering Information
Drain-Source On-Resistance [mΩ]
6.0V
180
7.0V
ID, Drain Current [A]
160
8.0V
140
5.0V
VGS = 10V
120
100
80
4.5V
60
40
4.7
4.6
VGS = 10V
4.5
4.4
4.0V
20
4.3
0
0
0
1
2
3
4
50
5
100
150
VDS, Drain-Source Voltage [V]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
2.5
20
※ Notes :
※ Notes :
18
RDS(ON) [mΩ ],
Drain-Source On-Resistance
1. VGS = 10 V
2. ID = 10 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
200
ID, Drain Current [A]
2.0
1.5
1.0
0.5
ID = 50A
16
14
12
10
TA = 25℃
8
6
4
2
0.0
-50
0
-25
0
25
50
75
100
125
2
150
3
4
5
6
7
8
9
10
VGS, Gate to Source Volatge [V]
o
TJ, Junction Temperature [ C]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
100
※ Notes :
※ Notes :
90
100
IDR, Reverse Drain Current [A]
VDS = 10V
ID, Drain Current [A]
80
70
60
TA=25℃
50
40
30
20
VGS = 0V
10
TA=25℃
1
10
0
0
1
2
3
4
5
6
7
0.0
8
Fig.5 Transfer Characteristics
Mar. 2014. Version 1.1
0.3
0.6
0.9
1.2
1.5
VSD, Source-Drain voltage [V]
VGS, Gate-Source Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
MagnaChip Semiconductor Ltd.
MDF1921– Single N-Channel Trench MOSFET 100V
4.8
200
※ Note : ID = 50A
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 50V
Capacitance [pF]
VGS, Gate-Source Voltage [V]
Ciss
8000
8
6
4
6000
? Notes ;
1. VGS = 0 V
2. f = 1 MHz
Coss
4000
2000
Crss
2
0
0
0
0
10
20
30
40
50
60
70
80
90
5
10
100
15
20
25
30
35
40
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
80
70
10
2
ID, Drain Current [A]
ID, Drain Current [A]
60
100 us
10
Operation in This Area
is Limited by R DS(on)
1
1 ms
10 ms
10
0
100 ms
10
-1
10
0
10
1
10
30
10
-1
10
40
20
1s
DC
Single Pulse
TJ=Max rated
TC=25℃
50
0
25
2
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.9 Maximum Safe Operating Area
1
10
Zθ JA(t), Thermal Response
D=0.5
0
10 0.2
0.1
0.05
-1
10 0.02
0.01
-2
10
※ Notes :
single pulse
-3
Duty Factor, D=t 1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
10
-4
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
Mar. 2014. Version 1.1
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MagnaChip Semiconductor Ltd.
MDF1921– Single N-Channel Trench MOSFET 100V
10000
10
MDF1921– Single N-Channel Trench MOSFET 100V
Package Dimension
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Mar. 2014. Version 1.1
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MagnaChip Semiconductor Ltd.
MDF1921– Single N-Channel Trench MOSFET 100V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Mar. 2014. Version 1.1
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MagnaChip Semiconductor Ltd.
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