MITSUBISHI M68731L

MITSUBISHI RF POWER MODULE
M68731L
SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO
Dimensions in mm
OUTLINE DRAWING
BLOCK DIAGRAM
30±0.2
26.6±0.2
2
21.2±0.2
3
2-R1.5±0.1
1
4
5
5
1
2
3
4
0.45
6±1
PIN:
1 Pin : RF INPUT
2 VGG : GATE BIAS SUPPLY
3 VDD : DRAIN BIAS SUPPLY
4 PO : RF OUTPUT
5 GND: FIN
13.7±1
18.8±1
23.9±1
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
VDD
VGG
Pin
PO
TC (OP)
Tstg
Parameter
Supply voltage
Gate bias voltage
Input power
Output power
Operation case temperature
Storage temperature
Conditions
VGG≤3.5V, ZG=ZL=50Ω
f=135-155MHz, ZG=ZL=50Ω
f=135-155MHz, ZG=ZL=50Ω
f=135-155MHz, ZG=ZL=50Ω
Ratings
9.2
4
70
10
-30 to +100
-40 to +110
Unit
V
V
mW
W
°C
°C
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted)
Symbol
f
PO
ηT
2fO
ρin
Parameter
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
Test conditions
VDD=7.2V,
VGG=3.5V,
Pin=50mW
Limits
Min
135
7
50
Max
155
-20
4
Unit
MHz
W
%
dBc
-
-
Stability
ZG=50Ω, VDD=4-9.2V,
Load VSWR<4:1
No parasitic oscillation
-
-
Load VSWR tolerance
VDD=9.2V, Pin=50mW,
PO=7W (VGG adjust), ZL=20:1
No degradation or
destroy
-
Note. Above parameters, ratings, limits and test conditions are subject to change.
Nov. ´97
MITSUBISHI RF POWER MODULE
M68731L
SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
14
13 VDD=7.2V
12 VGG=3.5V
Pin=50mW
11
10
9
8
7
6
5
4
3
2
1
0
130
140
90
80
PO
70
ηT
OUTPUT POWER, TOTAL EFFICENCY
VS. INPUT POWER
100
VDD=7.2V
VGG=3.5V
f=135MHz
PO
10
60
100
ηT
50
40
ρin
150
1
10
30
160
170
20
180
0.1
0.01
FREQUENCY f (MHz)
1
1
100
10
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICENCY
VS. INPUT POWER
100
VDD=7.2V
VGG=3.5V
f=155MHz
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
16
100
f=135MHz
VGG=3.5V
Pin=50mW
14
90
12
PO
10
0.1
100
ηT
80
10
70
ηT
8
1
10
60
6
50
PO
4
40
2
0.1
0.01
0.1
1
1
100
10
30
0
3
INPUT POWER Pin (mW)
5
6
7
16
20
9
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
100
f=155MHz
VGG=3.5V
Pin=50mW
100
VDD=7.2V
Pin=50mW
f=135MHz
90
12
80
10
70
ηT
8
PO
10
6
50
PO
100
ηT
60
4
8
SUPPLY VOLTAGE VDD (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
14
4
1
10
40
2
30
0
3
4
5
6
7
8
SUPPLY VOLTAGE VDD (V)
20
9
0.1
0.5
1
1.5
2
2.5
3
1
3.5
GATE VOLTAGE VGG (V)
Nov. ´97
MITSUBISHI RF POWER MODULE
M68731L
SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
100
VDD=7.2V
Pin=50mW
f=155MHz
PO
10
100
ηT
1
0.1
0.5
10
1
1.5
2
2.5
3
1
3.5
GATE VOLTAGE VGG (V)
Nov. ´97