AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
Advanced Planar Technology
P-Channel MOSFET
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
Package Type
AUIRFI4905
TO-220 Full-Pak
VDSS
-55V
RDS(on) max.
20m
ID (Silicon Limited)
-39A
D
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance
per silicon area. This benefit combined with the fast
switching speed an ruggedized device design that
HEXFET Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
Base Part Number
AUIRFI4905
D
G
S
TO-220 Full-Pak
G
D
S
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
AUIRFI4905
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC (Bottom) = 25°C
Continuous Drain Current, VGS @ -10V (Silicon Limited)
-39
ID @ TC (Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ -10V (Silicon Limited)
Pulsed Drain Current
-27
-155
A
PD @TC (Bottom) = 25°C
Power Dissipation
55
W
VGS
EAS
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
0.37
± 20
1247
See Fig. 14, 15, 22a, 22b
W/°C
V
mJ
A
-55 to + 175
°C
Thermal Resistance
Symbol
RJC
Junction-to-Case
Parameter
Typ.
–––
Max.
2.73
RJA
Junction-to-Ambient
–––
65
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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© 2013 International Rectifier
September 11, 2013
AUIRFI4905
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
–––
V VGS = 0V, ID = -250µA
––– -0.049 ––– V/°C Reference to 25°C, ID = -1.0mA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
–––
20
RDS(on)
Static Drain-to-Source On-Resistance
m VGS = -10V, ID = -23A
V VDS = VGS, ID = -250µA
VGS(th)
Gate Threshold Voltage
-2.0
––– -4.0
gfs
Forward Transconductance
17
–––
–––
S VDS = -10V, ID = -23A
–––
–––
-25
VDS = -55V, VGS = 0V
Drain-to-Source Leakage Current
µA
IDSS
–––
––– -250
VDS = -44V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
nA
Gate-to-Source Reverse Leakage
–––
––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
–––
110
165
ID = -23A
Gate-to-Source Charge
–––
18
–––
Qgs
nC VDS = -44V
VGS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
51
–––
td(on)
Turn-On Delay Time
–––
14
–––
VDD = -55V
Rise Time
–––
45
–––
tr
ns ID = -23A
td(off)
Turn-Off Delay Time
–––
71
–––
RG = 2.7
VGS = -10V
Fall Time
–––
61
–––
tf
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH 6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Ciss
Input Capacitance
––– 3560 –––
VGS = 0V
Output Capacitance
––– 1290 –––
Coss
pF VDS = -25V
ƒ = 1.0 MHz
Crss
Reverse Transfer Capacitance
–––
480
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
–––
–––
-39
MOSFET symbol
A
IS
(Body Diode)
showing the
G
integral reverse
Pulsed Source Current
–––
––– -155
A
ISM
S
(Body Diode)
p-n junction diode.
Diode Forward Voltage
–––
––– -1.6
V TJ = 25°C, IS = -23A, VGS = 0V
VSD
dv/dt
Peak Diode Recovery
–––
2.8
––– V/ns TJ = 175°C, IS= -23A, VDS = -55V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
–––
–––
64
164
–––
–––
ns
nC
TJ = 25°C, IF = -23A, VR = -28V
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 4.7mH, RG = 50, IAS = -23A, VGS =-10V.
ISD -23A, di/dt 1026A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ approximately 90°C.
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© 2013 International Rectifier
September 11, 2013
AUIRFI4905
1000
1000
100
BOTTOM
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
100
10
-4.5V
60µs PULSE WIDTH
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
-4.5V
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
1
0.1
1
10
100
0.1
-V DS, Drain-to-Source Voltage (V)
T J = 25°C
100
T J = 25°C
Gfs, Forward Transconductance (S)
-I D, Drain-to-Source Current (A)
100
40
1000
T J = 175°C
10
1
VDS = -25V
60µs PULSE WIDTH
30
20
T J = 175°C
10
V DS = -5.0V
0
0.1
0
2
4
6
8
10
12
0
10
20
30
40
50
60
70
80
-I D,Drain-to-Source Current (A)
-V GS, Gate-to-Source Voltage (V)
Fig. 4 Typical Forward Transconductance vs Drain Current
Fig. 3 Typical Transfer Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I SD, Reverse Drain Current (A)
10
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
100
T J = 175°C
T J = 25°C
10
VGS = 0V
1.0
1.8
ID = -39A
VGS = -10V
1.6
1.4
1.2
1.0
0.8
0.6
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V SD, Source-to-Drain Voltage (V)
Fig. 5 Typical Source-to-Drain Diode
Forward Voltage
3
1
-V DS, Drain-to-Source Voltage (V)
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© 2013 International Rectifier
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig. 6 Normalized On-Resistance vs. Temperature
September 11, 2013
AUIRFI4905
100000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= -23A
-V GS, Gate-to-Source Voltage (V)
C rss = C gd
C, Capacitance (pF)
C oss = C ds + C gd
10000
Ciss
Coss
1000
Crss
12.0
VDS= -44V
VDS= -28V
VDS= -11V
10.0
8.0
6.0
4.0
2.0
0.0
100
1
10
0
100
25
50
75
100
125
150
-V DS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
40
1000
100
100µsec
-I D, Drain Current (A)
-I D, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1msec
10msec
10
DC
1
30
20
10
Tc = 25°C
Tj = 175°C
Single Pulse
0
0.1
0.1
1
10
25
100
50
75
100
125
150
175
T C , Case Temperature (°C)
-V DS, Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Maximum Drain Current vs. Case Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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© 2013 International Rectifier
September 11, 2013
AUIRFI4905
5000
EAS , Single Pulse Avalanche Energy (mJ)
4.5
4000
-V GS(th) , Gate threshold Voltage (V)
ID
TOP
-8.8A
-13A
BOTTOM -23A
3000
2000
1000
0
4.0
3.5
3.0
2.5
2.0
ID = -250µA
ID = -1.0mA
ID = -1.0A
1.5
25
50
75
100
125
150
-75 -50 -25
Starting T J , Junction Temperature (°C)
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 13. Threshold Voltage vs. Temperature
100
-Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulse Width
1400
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = -23A
EAR , Avalanche Energy (mJ)
1200
1000
800
600
400
200
0
25
50
75
100
125
150
175
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
Starting T J , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
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© 2013 International Rectifier
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
September 11, 2013
AUIRFI4905
Fig 16. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs
Fig 17a. Unclamped Inductive Test Circuit
Fig 18a. Switching Time Test Circuit
Fig 17b. Unclamped Inductive Waveforms
Fig 18b. Switching Time Waveforms
VDD
Fig 19a. Gate Charge Test Circuit
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© 2013 International Rectifier
Fig 19b. Gate Charge Waveform
September 11, 2013
AUIRFI4905
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
Part Number
AUIRFI4905
Date Code
YWWA
IR Logo
XX
Y= Year
WW= Work Week
XX
Lot Code
TO-220AB Full-Pak packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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© 2013 International Rectifier
September 11, 2013
AUIRFI4905
TO-220AB Full-Pak Tube Sketch
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
Machine Model
TO-220 Full-Pak
N/A
Class M4 (+/- 700V)
††
AEC-Q101-002
Human Body Model
ESD
Class H2 (+/- 4000V)††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)††
AEC-Q101-005
Yes
RoHS Compliant
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
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© 2013 International Rectifier
September 11, 2013
AUIRFI4905
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any
product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications
using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and
operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by
all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive
business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all
express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not
responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where
personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer
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costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are
designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge
and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such
requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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© 2013 International Rectifier
September 11, 2013