Am29F200B Data Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary. For More Information Please contact your local sales office for additional information about Spansion memory solutions. Publication Number 21526 Revision D Amendment 4 Issue Date Nobember 1, 2006 THIS PAGE LEFT INTENTIONALLY BLANK. DATA SHEET Am29F200B 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 V for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F200A device ■ High performance — Access times as fast as 45 ns ■ Low power consumption — 20 mA typical active read current (byte mode) ■ Top or bottom boot block configurations available ■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses ■ Minimum 1,000,000 write/erase cycles guaranteed ■ 20-year data retention at 125°C — Reliable operation for the life of the system — 28 mA typical active read current for (word mode) ■ Package options — 30 mA typical program/erase current — 44-pin SO — 1 µA typical standby current — 48-pin TSOP ■ Sector erase architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and three 64 Kbyte sectors (byte mode) — Known Good Die (KGD) (see publication number 21257) ■ Compatible with JEDEC standards — One 8 Kword, two 4 Kword, one 16 Kword, and three 32 Kword sectors (word mode) — Pinout and software compatible with single-power-supply flash — Supports full chip erase — Superior inadvertent write protection — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Data# Polling and Toggle Bit — Detects program or erase cycle completion ■ Ready/Busy# output (RY/BY#) — Hardware method for detection of program or erase cycle completion ■ Erase Suspend/Erase Resume — Supports reading data from a sector not being erased ■ Hardware RESET# pin — Resets internal state machine to the reading array data This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Publication# 21526 Rev: D Amendment: 4 Issue Date: November 1, 2006 D A T A S H E E T GENERAL DESCRIPTION The Am29F200B is a 2 Mbit, 5.0 Volt-only Flash memory organized as 262,144 bytes or 131,072 words. The 8 bits of data appear on DQ0–DQ7; the 16 bits on DQ0–DQ15. The Am29F200B is offered in 44-pin SO and 48-pin TSOP packages. The device is also available in Known Good Die (KGD) form. For more information, refer to publication number 21257. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers. This device is manufactured using AMD’s 0.32 µm process technology, and offers all the features and benefits of the Am29F200A, which was manufactured using 0.5 µm process technology. The standard device offers access times of 45, 50, 55, 70, 90, and 120 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. 2 Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6/DQ2 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved via programming equipment. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The system can place the device into the standby mode. Power consumption is greatly reduced in this mode. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection. Am29F200B 21526D4 November 1, 2006 D A T A S H E E T TABLE OF CONTENTS Product Selector Guide . . . . . . . . . . . . . . . . . . . . . Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ordering Information . . . . . . . . . . . . . . . . . . . . . . . Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 4 4 5 6 6 7 8 Table 1. Am29F200B Device Bus Operations ..................................8 Word/Byte Configuration .......................................................... 8 Requirements for Reading Array Data ..................................... 8 Writing Commands/Command Sequences .............................. 8 Program and Erase Operation Status ...................................... 9 Standby Mode .......................................................................... 9 RESET#: Hardware Reset Pin ................................................. 9 Output Disable Mode ................................................................ 9 Table 2. Am29F200T Top Boot Block Sector Address Table .........10 Table 3. Am29F200B Bottom Boot Block Sector Address Table ....10 DQ2: Toggle Bit II ................................................................... 18 Reading Toggle Bits DQ6/DQ2 ............................................... 18 DQ5: Exceeded Timing Limits ................................................ 19 DQ3: Sector Erase Timer ....................................................... 19 Figure 5. Toggle Bit Algorithm........................................................ 19 Table 6. Write Operation Status ..................................................... 20 Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 21 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 21 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 22 TTL/NMOS Compatible .......................................................... 22 CMOS Compatible .................................................................. 23 Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Figure 8. Test Setup....................................................................... 24 Table 7. Test Specifications ........................................................... 24 Key to Switching Waveforms. . . . . . . . . . . . . . . . 24 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 25 Read Operations .................................................................... 25 Autoselect Mode ..................................................................... 10 Figure 9. Read Operations Timings ............................................... 25 Table 4. Am29F200B Autoselect Codes (High Voltage Method) ....11 Hardware Reset (RESET#) .................................................... 26 Sector Protection/Unprotection ............................................... 11 Temporary Sector Unprotect .................................................. 11 Figure 1. Temporary Sector Unprotect Operation........................... 11 Hardware Data Protection ...................................................... 11 Low VCC Write Inhibit ......................................................................12 Write Pulse “Glitch” Protection ........................................................12 Logical Inhibit ..................................................................................12 Power-Up Write Inhibit ....................................................................12 Command Definitions . . . . . . . . . . . . . . . . . . . . . 12 Reading Array Data ................................................................ 12 Reset Command ..................................................................... 12 Autoselect Command Sequence ............................................ 12 Word/Byte Program Command Sequence ............................. 13 Figure 2. Program Operation .......................................................... 13 Chip Erase Command Sequence ........................................... 13 Sector Erase Command Sequence ........................................ 14 Erase Suspend/Erase Resume Commands ........................... 14 Figure 3. Erase Operation............................................................... 15 Command Definitions ............................................................. 16 Table 5. Am29F200B Command Definitions ...................................16 DQ7: Data# Polling ................................................................. 17 Figure 4. Data# Polling Algorithm ................................................... 17 Figure 10. RESET# Timings .......................................................... 26 Word/Byte Configuration (BYTE#) ...................................... 27 Figure 11. BYTE# Timings for Read Operations............................ 27 Figure 12. BYTE# Timings for Write Operations............................ 27 Erase/Program Operations ..................................................... 28 Figure 13. Program Operation Timings.......................................... Figure 14. Chip/Sector Erase Operation Timings .......................... Figure 15. Data# Polling Timings (During Embedded Algorithms). Figure 16. Toggle Bit Timings (During Embedded Algorithms)...... Figure 17. DQ2 vs. DQ6................................................................. 29 30 31 31 32 Temporary Sector Unprotect .................................................. 32 Figure 18. Temporary Sector Unprotect Timing Diagram .............. 32 Alternate CE# Controlled Erase/Program Operations ............ 33 Figure 19. Alternate CE# Controlled Write Operation Timings ...... 34 Erase and Programming Performance . . . . . . . . 35 Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 35 TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 35 Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 36 SO 044—44-Pin Small Outline Package ................................ 36 TS 048—48-Pin Standard Thin Small Outline Package ......... 37 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 38 RY/BY#: Ready/Busy# ........................................................... 18 DQ6: Toggle Bit I .................................................................... 18 November 1, 2006 21526D4 Am29F200B 3 D A T A S H E E T PRODUCT SELECTOR GUIDE Family Part Number Am29F200B VCC = 5.0 V ± 5% Speed Option -45 -50 VCC = 5.0 V ± 10% -55 -70 -90 -120 Max access time, ns (tACC) 45 50 55 70 90 120 Max CE# access time, ns (tCE) 45 50 55 70 90 120 Max OE# access time, ns (tOE) 30 30 30 30 35 50 BLOCK DIAGRAM DQ0–DQ15 VCC VSS WE# BYTE# RESET# RY/BY# Buffer RY/BY# Input/Output Buffers Erase Voltage Generator State Control Command Register PGM Voltage Generator Chip Enable Output Enable Logic CE# OE# VCC Detector Timer A0–A16 Address Latch STB STB Data Latch Y-Decoder Y-Gating X-Decoder Cell Matrix A-1 4 Am29F200B 21526D4 November 1, 2006 D A T A S H E E T CONNECTION DIAGRAMS This device is also available in Known Good Die (KGD) form. Refer to publication number 21257 for more information. NC RY/BY# NC A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 November 1, 2006 21526D4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 SO Am29F200B 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 RESET# WE# A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC 5 D A T A S H E E T CONNECTION DIAGRAMS This device is also available in Known Good Die (KGD) form. Refer to publication number 21257 for more information. A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RESET# NC NC RY/BY# NC NC A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Standard TSOP PIN CONFIGURATION A0–A16 = LOGIC SYMBOL 17 addresses 17 DQ0–DQ14 = 15 data inputs/outputs DQ15/A-1 = DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode) BYTE# = Selects 8-bit or 16-bit mode CE# = Chip enable OE# = Output enable WE# = Write enable RESET# RESET# = Hardware reset pin, active low BYTE# RY/BY# = Ready/Busy output VCC = +5.0 V single power supply (see Product Selector Guide for device speed ratings and voltage supply tolerances) VSS = Device ground NC = Pin not connected internally 6 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A0–A16 16 or 8 DQ0–DQ15 (A-1) CE# OE# WE# Am29F200B RY/BY# 21526D4 November 1, 2006 D A T A S H E E T ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29F200B T -45 E C TEMPERATURE RANGE C = Commercial (0°C to +70°C) D = Commercial (0°C to +70°C) with Pb-free package I = Industrial (–40°C to +85°C) F = Industrial (–40°C to +85°C) with Pb-free package E = Extended (–55°C to +125°C) K = Extended (–55°C to +125°C) with Pb-free package PACKAGE TYPE E = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048) S = 44-Pin Small Outline Package (SO 044) This device is also available in Known Good Die (KGD) form. See publication number 21257 for more information. SPEED OPTION See Product Selector Guide and Valid Combinations BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector DEVICE NUMBER/DESCRIPTION Am29F200B 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory 5.0 Volt-only Program and Erase Valid Combinations AM29F200BT-45, AM29F200BB-45 VCC Voltage EC, EI, SC, SI ED, EF, SD, SF 5.0 V ± 5% AM29F200BT-50, AM29F200BB-50 Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. AM29F200BT-55, AM29F200BB-55 AM29F200BT-70, AM29F200BB-70 EC, EI, EE, ED, EF, EK SC, SI, SE, SD, SF, SK AM29F200BT-90, AM29F200BB-90 5.0 V ± 10% AM29F200BT-120, AM29F200BB-120 November 1, 2006 21526D4 Am29F200B 7 D A T A S H E E T DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is composed of latches that store the commands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The appropriate device bus operations table lists the inputs and control levels required, and the resulting output. The following subsections describe each of these operations in further detail. Table 1. Am29F200B Device Bus Operations DQ8–DQ15 CE# OE# WE# RESET# A0–A16 DQ0–DQ7 BYTE# = VIH BYTE# = VIL Read L L H H AIN DOUT DOUT High-Z Write L H L H AIN DIN DIN High-Z VCC ± 0.5 V X X VCC ± 0.5 V X High-Z High-Z High-Z TTL Standby H X X H X High-Z High-Z High-Z Output Disable L H H H X High-Z High-Z High-Z Hardware Reset X X X L X High-Z High-Z High-Z Temporary Sector Unprotect (See Note) X X X VID AIN DIN DIN X Operation CMOS Standby Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, DIN = Data In, DOUT = Data Out, AIN = Address In Note: See the sections Sector Group Protection and Temporary Sector Unprotect for more information. Word/Byte Configuration The BYTE# pin controls whether the device data I/O pins DQ15–DQ0 operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ15–DQ0 are active and controlled by CE# and OE#. If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ0–DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. On x16 (word-wide) devices, the BYTE# pin determines whether the device outputs array data in words or bytes. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory 8 content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. See “Reading Array Data” for more information. Refer to the AC Read Operations table for timing specifications and to the Read Operations Timings diagram for the timing waveforms. ICC1 in the DC Characteristics table represents the active current specification for reading array data. Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. On x16 (word-wide) devices, for program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to “Word/Byte Configuration” for more information. Am29F200B 21526D4 November 1, 2006 D A T A An erase operation can erase one sector, multiple sectors, or the entire device. The Sector Address Tables indicate the address space that each sector occupies. A “sector address” consists of the address bits required to uniquely select a sector. See the “Command Definitions” section for details on erasing a sector or the entire chip, or suspending/resuming the erase operation. After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to the “Autoselect Mode” and “Autoselect Command Sequence” sections for more information. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The “AC Characteristics” section contains timing specification tables and timing diagrams for write operations. Program and Erase Operation Status During an erase or program operation, the system may check the status of the operation by reading the status bits on DQ7–DQ0. Standard read cycle timings and ICC read specifications apply. Refer to “Write Operation Status” for more information, and to each AC Characteristics section in the appropriate data sheet for timing diagrams. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when CE# and RESET# pins are both held at VCC ± 0.5 V. (Note that this is a more restricted voltage range than VIH.) The device enters the TTL standby mode when CE# and RESET# pins are both held at VIH. The device requires standard access time (tCE) for read access when the device is in either of these standby modes, before it is ready to read data. The device also enters the standby mode when the RESET# pin is driven low. Refer to the next section, “RESET#: Hardware Reset Pin”. November 1, 2006 21526D4 S H E E T If the device is deselected during erasure or programming, the device draws active current until the operation is completed. In the DC Characteristics tables, ICC3 represents the standby current specification. RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the system drives the RESET# pin low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all data output pins, and ignores all read/write attempts for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VIL, the device enters the TTL standby mode; if RESET# is held at VSS ± 0.5 V, the device enters the CMOS standby mode. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data t RH after the RESET# pin returns to VIH. Refer to the AC Characteristics tables for RESET# parameters and timing diagram. Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. Am29F200B 9 D A T A Table 2. S H E E T Am29F200T Top Boot Block Sector Address Table Address Range (in hexadecimal) Sector A16 A15 A14 A13 A12 Sector Size (Kbytes/ Kwords) SA0 0 0 X X X 64/32 00000h–0FFFFh 00000h–07FFFh SA1 0 1 X X X 64/32 10000h–1FFFFh 08000h–0FFFFh SA2 1 0 X X X 64/32 20000h–2FFFFh 10000h–17FFFh SA3 1 1 0 X X 32/16 30000h–37FFFh 18000h–1BFFFh SA4 1 1 1 0 0 8/4 38000h–39FFFh 1C000h–1CFFFh SA5 1 1 1 0 1 8/4 3A000h–3BFFFh 1D000h–1DFFFh SA6 1 1 1 1 X 16/8 3C000h–3FFFFh 1E000h–1FFFFh Table 3. (x8) Address Range (x16) Address Range Am29F200B Bottom Boot Block Sector Address Table Address Range (in hexadecimal) Sector A16 A15 A14 A13 A12 Sector Size (Kbytes/ Kwords) SA0 0 0 0 0 X 16/8 00000h–03FFFh 00000h–01FFFh SA1 0 0 0 1 0 8/4 04000h–05FFFh 02000h–02FFFh SA2 0 0 0 1 1 8/4 06000h–07FFFh 03000h–03FFFh SA3 0 0 1 X X 32/16 08000h–0FFFFh 04000h–07FFFh SA4 0 1 X X X 64/32 10000h–1FFFFh 08000h–0FFFFh SA5 1 0 X X X 64/32 20000h–2FFFFh 10000h–17FFFh SA6 1 1 X X X 64/32 30000h–3FFFFh 18000h–1FFFFh (x8) Address Range (x16) Address Range Note for Tables 2 and 3: Address range is A16:A-1 in byte mode and A16:A0 in word mode. See the “Word/Byte Configuration” sectionfor more information. Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID (11.5 V to 12.5 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in Autoselect Codes (High Voltage Method) table. In addition, when verifying sector protection, the sector 10 address must appear on the appropriate highest order address bits. Refer to the corresponding Sector Address Tables. The Command Definitions table shows the remaining address bits that are don’t care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in the Command Definitions table. This method does not require VID. See “Autoselect Command Sequence” for details on using the autoselect mode. Am29F200B 21526D4 November 1, 2006 D A T A Table 4. Description Mode Manufacturer ID: AMD Am29F200B Autoselect Codes (High Voltage Method) A16 A11 to to WE# A12 A10 CE# OE# L L H L L H Device ID: Am29F200B (Top Boot Block) Word Byte L L H Device ID: Am29F200B (Bottom Boot Block) Word L L H Sector Protection Verification L L L L A6 A5 to A2 A1 A0 DQ8 to DQ15 DQ7 to DQ0 X 01h 22h 51h X 51h 22h 57h X 57h X 01h (protected) X 00h (unprotected) X VID X L X L L X X VID X L X L H VID X X H H A9 A8 to A7 X X Byte S H E E T SA X VID X L L X X L H H L L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care. Sector Protection/Unprotection The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. START RESET# = VID (Note 1) Sector protection/unprotection must be implemented using programming equipment. The procedure requires a high voltage (VID) on address pin A9 and the control pins. Details on this method are provided in a supplement, publication number 20551. Contact an AMD representative to obtain a copy of the appropriate document. Perform Erase or Program Operations RESET# = VIH The device is shipped with all sectors unprotected. AMD offers the option of programming and protecting sectors at its factory prior to shipping the device through AMD’s ExpressFlash™ Service. Contact an AMD representative for details. It is possible to determine whether a sector is protected or unprotected. See “Autoselect Mode” for details. Temporary Sector Unprotect This feature allows temporary unprotection of previously protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 1 shows the algorithm, and the Temporary Sector Unprotect diagram (Figure 18) shows the timing waveforms, for this feature. November 1, 2006 21526D4 Temporary Sector Unprotect Completed (Note 2) Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. Figure 1. Temporary Sector Unprotect Operation Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to the Command Definitions table). In addition, the following hardware data protection measures prevent accidental erasure or pro- Am29F200B 11 D A T A S H E E T gramming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. Write Pulse “Glitch” Protection Low VCC Write Inhibit Logical Inhibit When V CC is less than V LKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets. Subsequent writes are ignored until VCC is greater than V LKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. Power-Up Write Inhibit If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up. COMMAND DEFINITIONS Writing specific address and data commands or sequences into the command register initiates device operations. The Command Definitions table defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. ters, and Read Operation Timings diagram shows the timing diagram. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the appropriate timing diagrams in the “AC Characteristics” section. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See “Erase Suspend/Erase Resume Commands” for more information on this mode. The system must issue the reset command to reenable the device for reading array data if DQ5 goes high, or while in the autoselect mode. See the “Reset Command” section, next. See also “Requirements for Reading Array Data” in the “Device Bus Operations” section for more information. The Read Operations table provides the read parame- 12 Reset Command Writing the reset command to the device resets the device to reading array data. Address bits are don’t care for this command. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during Erase Suspend). If DQ5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies dur ing Erase Suspend). Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. The Command Definitions table shows the address and data requirements. This method is an alternative to that shown in the Autoselect Codes (High Voltage Am29F200B 21526D4 November 1, 2006 D A T A S H E E T Method) table, which is intended for PROM programmers and requires VID on address bit A9. START The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode, and the system may read at any address any number of times, without initiating another command sequence. Write Program Command Sequence A read cycle at address XX00h retrieves the manufacturer code. A read cycle at address XX01h in word mode (or 02h in byte mode) returns the device code. A read cycle containing a sector address (SA) and the address 02h in word mode (or 04h in byte mode) returns 01h if that sector is protected, or 00h if it is unprotected. Refer to the Sector Address tables for valid sector addresses. Data Poll from System Embedded Program algorithm in progress Verify Data? The system must write the reset command to exit the autoselect mode and return to reading array data. Yes Word/Byte Program Command Sequence The system may program the device by byte or word, on depending on the state of the BYTE# pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verify the programmed cell margin. The Command Definitions take shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. See “Write Operation Status” for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the programming operation. The program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a “0” back to a “1”. Attempting to do so may halt the operation and set DQ5 to “1”, or cause the Data# Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still “0”. Only erase operations can convert a “0” to a “1”. November 1, 2006 21526D4 No Increment Address No Last Address? Yes Programming Completed Note: See the appropriate Command Definitions table for program command sequence. Figure 2. Program Operation Chip Erase Command Sequence Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. The Command Definitions table shows the address and data requirements for the chip erase command sequence. Any commands wr itten to the chip dur ing the Embedded Erase algorithm are ignored. Note that a hardware reset during the chip erase operation immediately terminates the operation. The Chip Erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. Am29F200B 13 D A T A The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. See “Write Operation Status” for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. Figure 3 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in “AC Characteristics” for parameters, and to the Chip/Sector Erase Operation Timings for timing waveforms. Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. The Command Definitions table shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram the memory prior to erase. The Embedded Erase algorithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50 µs begins. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 µs, otherwise the last address and command might not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If the time between additional sector erase commands can be assumed to be less than 50 µs, the system need not monitor DQ3. Any command other than Sector Erase or Erase Suspend during the time-out period resets the device to reading array data. The system must rewrite the command sequence and any additional sector addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out. (See the “DQ3: Sector Erase Timer” section.) The time-out begins from the rising edge of the final WE# pulse in the command sequence. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. Note that a hardware reset during the sector erase operation immediately terminates the operation. The Sector Erase command sequence 14 S H E E T should be reinitiated once the device has returned to reading array data, to ensure data integrity. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to “Write Operation Status” for information on these status bits. Figure 3 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the “AC Characteristics” section for parameters, and to the Sector Erase Operations Timing diagram for timing waveforms. Erase Suspend/Erase Resume Commands The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during the Sector Erase time-out immediately terminates the time-out period and suspends the erase operation. Addresses are “don’t-cares” when writing the Erase Suspend command. When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Normal read and write timings and command definitions apply. Reading at any address within erase-suspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See “Write Operation Status” for information on these status bits. After an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. See “Wr ite Operation Status” for more information. The system may also write the autoselect command sequence when the device is in the Erase Suspend Am29F200B 21526D4 November 1, 2006 D A T A S H E E T mode. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. See “Autoselect Command Sequence” for more information. START Write Erase Command Sequence The system must write the Erase Resume command (address bits are “don’t care”) to exit the erase suspend mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the device has resumed erasing. Data Poll from System No Embedded Erase algorithm in progress Data = FFh? Yes Erasure Completed Notes: 1. See the appropriate Command Definitions table for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 3. November 1, 2006 21526D4 Am29F200B Erase Operation 15 D A T A S H E E T Command Definitions Cycles Table 5. Command Sequence (Note 1) Am29F200B Command Definitions Bus Cycles (Notes 2–5) First Second Addr Data Read (Note 6) 1 RA RD Reset (Note 7) 1 XXX F0 Autoselect (Note 8) Manufacturer ID Word Byte Device ID, Top Boot Block Word Device ID, Bottom Boot Block Word Byte Byte 4 4 4 Word Sector Protect Verify (Note 9) Program Chip Erase Sector Erase 555 AAA 555 AAA 555 AAA AA AA AA 555 4 Addr 2AA 555 2AA 555 2AA 555 Third Data 555 55 AAA 555 55 AAA 555 55 AAA 2AA AA Addr 55 555 AAA Word 555 2AA 555 Word Byte Word Byte 6 6 AAA 555 AAA 555 AAA AA AA AA Erase Suspend (Note 10) 1 XXX B0 Erase Resume (Note 11) 1 XXX 30 555 2AA 555 2AA 555 90 90 55 AAA 555 55 AAA 555 55 AAA A0 80 80 Data X00 01 X01 2251 X02 51 X01 2257 X02 57 (SA) X02 XX00 (SA) X04 00 PA PD 90 AAA 4 90 555 Byte Byte Fourth Data Addr 555 AAA 555 AAA Fifth Sixth Addr Data Addr Data XX01 01 AA AA 2AA 555 2AA 555 55 55 555 AAA SA 10 30 Legend: PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. X = Don’t care RA = Address of the memory location to be read. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A16–A12 uniquely select any sector. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. Notes: 1. See Table 1 for description of bus operations. 8. The fourth cycle of the autoselect command sequence is a read cycle. 2. All values are in hexadecimal. 3. Except when reading array or autoselect data, all bus cycles are write operations. 4. Data bits DQ15–DQ8 are don’t cares for unlock and command cycles. 9. The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more information. 5. Address bits A16–A11 are don’t cares for unlock and command cycles, unless SA or PA required. 10. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation. 6. No unlock or command cycles required when reading array data. 11. The Erase Resume command is valid only during the Erase Suspend mode. 7. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high (while the device is providing status data). 16 Am29F200B 21526D4 November 1, 2006 D A T A S H E E T WRITE OPERATION STATUS The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the following subsections describe the functions of these bits. DQ7, RY/BY#, and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first. Table 6 shows the outputs for Data# Polling on DQ7. Figure 4 shows the Data# Polling algorithm. START DQ7: Data# Polling Read DQ7–DQ0 Addr = VA The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the program or erase command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 2 μs, then the device returns to reading array data. DQ7 = Data? No No When the system detects DQ7 has changed from the complement to true data, it can read valid data at DQ7– DQ0 on the following read cycles. This is because DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is asserted low. The Data# Polling Timings (During Embedded Algorithms) figure in the “AC Characteristics” section illustrates this. November 1, 2006 21526D4 DQ5 = 1? Yes Read DQ7–DQ0 Addr = VA During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. This is analogous to the complement/true datum output described for the Embedded Program algorithm: the erase function changes all the bits in a sector to “1”; prior to this, the device outputs the “complement,” or “0.” The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 μs, then the device returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. Yes DQ7 = Data? Yes No FAIL PASS Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for erasure. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Am29F200B Figure 4. Data# Polling Algorithm 17 D A T A RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode. Table 6 shows the outputs for RY/BY#. The timing diagrams for read, reset, program, and erase shows the relationship of RY/BY# to other signals. DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. (The system may use either OE# or CE# to control the read cycles.) When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 μs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on “DQ7: Data# Polling”). If a program address falls within a protected sector, DQ6 toggles for approximately 2 μs after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. 18 S H E E T The Write Operation Status table shows the outputs for Toggle Bit I on DQ6. Refer to Figure 5 for the toggle bit algorithm, and to the Toggle Bit Timings figure in the “AC Characteristics” section for the timing diagram. The DQ2 vs. DQ6 figure shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on “DQ2: Toggle Bit II”. DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 6 to compare outputs for DQ2 and DQ6. Figure 5 shows the toggle bit algorithm in flowchart form, and the section “DQ2: Toggle Bit II” explains the algorithm. See also the “DQ6: Toggle Bit I” subsection. Refer to the Toggle Bit Timings figure for the toggle bit timing diagram. The DQ2 vs. DQ6 figure shows the differences between DQ2 and DQ6 in graphical form. Reading Toggle Bits DQ6/DQ2 Refer to Figure 5 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, a system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and Am29F200B 21526D4 November 1, 2006 D A T A the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 5). S H E E T of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 6 shows the outputs for DQ3. START Read DQ7–DQ0 DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1.” This is a failure condition that indicates the program or erase cycle was not successfully completed. The DQ5 failure condition may appear if the system tries to program a “1” to a location that is previously programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a “1.” Read DQ7–DQ0 (Note 1) Toggle Bit = Toggle? No Yes Under both these conditions, the system must issue the reset command to return the device to reading array data. No DQ5 = 1? Yes DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire timeout also applies after each additional sector erase command. When the time-out is complete, DQ3 switches from “0” to “1.” The system may ignore DQ3 if the system can guarantee that the time between additional sector erase commands will always be less than 50 μs. See also the “Sector Erase Command Sequence” section. After the sector erase command sequence is written, the system should read the status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device has accepted the command sequence, and then read DQ3. If DQ3 is “1”, the internally controlled erase cycle has begun; all further commands (other than Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0”, the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status November 1, 2006 21526D4 Read DQ7–DQ0 Twice Toggle Bit = Toggle? (Notes 1, 2) No Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text. Am29F200B Figure 5. Toggle Bit Algorithm 19 D A T A S H E E T Table 6. Write Operation Status DQ7 (Note 1) DQ6 DQ5 (Note 2) DQ3 DQ2 (Note 1) RY/BY# DQ7# Toggle 0 N/A No toggle 0 Embedded Erase Algorithm 0 Toggle 0 1 Toggle 0 Reading within Erase Suspended Sector 1 No toggle 0 N/A Toggle 1 Reading within Non-Erase Suspended Sector Data Data Data Data Data 1 Erase-Suspend-Program DQ7# Toggle 0 N/A N/A 0 Operation Standard Mode Erase Suspend Mode Embedded Program Algorithm Notes: 1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 2. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. See “DQ5: Exceeded Timing Limits” for more information. 20 Am29F200B 21526D4 November 1, 2006 D A T A S H E E T ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied. . . . . . . . . . . . . . –55°C to +125°C 20 ns 20 ns +0.8 V –0.5 V Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . . . . –2.0 V to +7.0 V –2.0 V A9, OE#, and RESET# (Note 2). . . . . . . . . . . .–2.0 V to +12.5 V 20 ns Figure 6. Maximum Negative Overshoot Waveform All other pins (Note 1) . . . . . . . . . –0.5 V to +7.0 V Output Short Circuit Current (Note 3) . . . . . . 200 mA Notes: 1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 6. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 7. 2. Minimum DC input voltage on pins A9, OE#, and RESET# is –0.5 V. During voltage transitions, A9, OE#, and RESET# may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 6. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to +13.5 V for periods up to 20 ns. 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 20 ns 20 ns Figure 7. Maximum Positive Overshoot Waveform Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. OPERATING RANGES Commercial (C) Devices Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C Industrial (I) Devices Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C Extended (E) Devices Ambient Temperature (TA) . . . . . . . . –55°C to +125°C VCC Supply Voltages VCC for ± 5% devices . . . . . . . . . . .+4.75 V to +5.25 V VCC for± 10% devices . . . . . . . . . . . .+4.5 V to +5.5 V Note: Operating ranges define those limits between which the functionality of the device is guaranteed. November 1, 2006 21526D4 Am29F200B 21 D A T A S H E E T DC CHARACTERISTICS TTL/NMOS Compatible Parameter Symbol Parameter Description Test Conditions Min Max Unit ±1.0 µA 50 µA ±1.0 µA ILI Input Load Current VIN = VSS to VCC, VCC = VCC Max ILIT A9, OE# , RESET# Input Load Current VCC = VCC Max, A9, OE# , RESET# = 12.5 V ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC Max ICC1 VCC Active Read Current (Notes 1, 2) CE# = VIL, OE# = VIH ICC2 VCC Active Program/Erase Current (Notes 2, 3, 4) CE# = VIL, OE# = VIH 60 mA ICC3 VCC Standby Current (Note 2) VCC = VCC Max, CE# = VIH, OE# = VIH 1.0 mA VIL Input Low Voltage –0.5 0.8 V VIH Input High Voltage 2.0 VCC + 0.5 V VID Voltage for Autoselect and Temporary VCC = 5.0 V Sector Unprotect 11.5 12.5 V VOL Output Low Voltage IOL = 5.8 mA, VCC = VCC Min 0.45 V VOH Output High Voltage IOH = –2.5 mA, VCC = VCC Min VLKO Low VCC Lock-Out Voltage Byte 40 Word 50 mA 2.4 3.2 V 4.2 V Notes: 1. The ICC current is typically less than 2 mA/MHz, with OE# at VIH. 2. Maximum ICC specifications are tested with VCC = VCCmax. 3. ICC active while Embedded Program or Erase Algorithm is in progress. 4. Not 100% tested. 22 Am29F200B 21526D4 November 1, 2006 D A T A S H E E T DC CHARACTERISTICS (Continued) CMOS Compatible Parameter Symbol Parameter Description Test Conditions Min ILI Input Load Current VIN = VSS to VCC, VCC = VCC Max ILIT A9, OE# , RESET# Input Load Current VCC = VCC Max; A9, OE# , RESET# = 12.5 V ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC Max ICC1 VCC Active Read Current (Notes 1, 2) CE# = VIL, OE# = VIH ICC2 VCC Active Program/Erase Current (Notes 2, 3, 4) ICC3 VCC Standby Current Note (Note 5) VIL Input Low Voltage VIH Input High Voltage VID Voltage for Autoselect and Temporary Sector Unprotect VCC = 5.0 V VOL Output Low Voltage IOL = 5.8 mA, VCC = VCC Min VOH1 Output Low Voltage VOH2 VLKO Typ Max Unit ±1.0 µA 50 µA ±1.0 µA Byte 20 40 Word 28 50 CE# = VIL, OE# = VIH 30 50 mA CE# = VCC ± 0.5 V, OE# = VIH 1 5 µA –0.5 0.8 V 0.7 x VCC VCC + 0.3 V 11.5 12.5 V 0.45 V mA IOH = –2.5 mA, VCC = VCC Min 0.85 VCC V IOH = –100 µA, VCC = VCC Min VCC – 0.4 V Low VCC Lock-Out Voltage 3.2 4.2 V Notes: 1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 2. Maximum ICC specifications are tested with VCC = VCCmax. 3. ICC active while Embedded Program or Erase Algorithm is in progress. 4. Not 100% tested. 5. ICC3 for extended temperature is 20 µA max (>+85°C). November 1, 2006 21526D4 Am29F200B 23 D A T A S H E E T TEST CONDITIONS Table 7. Test Specifications 5.0 -45, -50, -55 Test Condition 2.7 kΩ Device Under Test CL Output Load 6.2 kΩ Figure 8. Unit 1 TTL gate Output Load Capacitance, CL (including jig capacitance) 30 100 pF Input Rise and Fall Times 5 20 ns 0.0–3.0 0.45–2.4 V Input timing measurement reference levels 1.5 0.8, 2.0 V Output timing measurement reference levels 1.5 0.8, 2.0 V Input Pulse Levels Note: Diodes are IN3064 or equivalents. All others Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS OUTPUTS Steady Changing from H to L Changing from L to H 24 Don’t Care, Any Change Permitted Changing, State Unknown Does Not Apply Center Line is High Impedance State (High Z) Am29F200B 21526D4 November 1, 2006 D A T A S H E E T AC CHARACTERISTICS Read Operations Parameter Speed Options JEDEC Std Description -45 -50 -55 -70 -90 -120 Unit tAVAV tRC Read Cycle Time (Note 1) Min 45 50 55 70 90 120 ns tAVQV tACC Address to Output Delay CE# = VIL OE# = VIL Max 45 50 55 70 90 120 ns tELQV tCE Chip Enable to Output Delay OE# = VIL Max 45 50 55 70 90 120 ns tGLQV tOE Output Enable to Output Delay (Note 1) Max 30 30 30 30 35 50 ns tEHQZ tDF Chip Enable to Output High Z (Note 1) Max 20 20 20 20 20 30 ns tGHQZ tDF Output Enable to Output High Z (Note 1) Max 20 20 20 20 20 30 ns Output Enable tOEH Hold Time (Note 1) tAXQX tOH Test Setup Read Min 0 ns Toggle and Data# Polling Min 10 ns Min 0 ns Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First (Note 1) Notes: 1. Not 100% tested. 2. See Figure 8 and Table 7 for test specifications tRC Addresses Stable Addresses tACC CE# tDF tOE OE# tOEH WE# tCE tOH HIGH Z HIGH Z Output Valid Outputs RESET# RY/BY# 0V Figure 9. Read Operations Timings November 1, 2006 21526D4 Am29F200B 25 D A T A S H E E T AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description Test Setup All Speed Options Unit tREADY RESET# Pin Low (During Embedded Algorithms) to Read or Write (See Note) Max 20 μs tREADY RESET# Pin Low (NOT During Embedded Algorithms) to Read or Write (See Note) Max 500 ns tRP RESET# Pulse Width Min 500 ns tRH RESET# High Time Before Read (See Note) Min 50 ns tRB RY/BY# Recovery Time Min 0 ns Note: Not 100% tested. RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# RESET# tRP Figure 10. 26 RESET# Timings Am29F200B 21526D4 November 1, 2006 D A T A S H E E T AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std Speed Options Description -45 -50 -55 -70 -90 -120 5 Unit tELFL/tELFH CE# to BYTE# Switching Low or High Max ns tFLQZ BYTE# Switching Low to Output HIGH Z Max 20 20 20 20 20 30 ns tFHQV BYTE# Switching High to Output Active Max 45 50 55 70 90 120 ns CE# OE# BYTE# BYTE# Switching from word to byte mode tELFL Data Output (DQ0–DQ14) DQ0–DQ14 Address Input DQ15 Output DQ15/A-1 Data Output (DQ0–DQ7) tFLQZ tELFH BYTE# BYTE# Switching from byte to word mode Data Output (DQ0–DQ7) DQ0–DQ14 Address Input DQ15/A-1 Data Output (DQ0–DQ14) DQ15 Output tFHQV Figure 11. BYTE# Timings for Read Operations CE# The falling edge of the last WE# signal WE# BYTE# tSET (tAS) tHOLD (tAH) Note: Refer to the Erase/Program Operations table for tAS and tAH specifications. Figure 12. November 1, 2006 21526D4 BYTE# Timings for Write Operations Am29F200B 27 D A T A S H E E T AC CHARACTERISTICS Erase/Program Operations Parameter Speed Options JEDEC Std Description -45 -50 -55 -70 -90 -120 Unit tAVAV tWC Write Cycle Time (Note 1) Min 45 50 55 70 90 120 ns tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 45 45 45 50 ns tDVWH tDS Data Setup Time Min 25 25 25 30 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns 0 ns tGHWL tGHWL tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 20 Typ 7 tWHWH1 Programming Operation (Note 2) Byte tWHWH1 Word Typ 12 tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 1 sec tVCS VCC Setup Time (Note 1) Min 50 µs tRB Recovery Time from RY/BY# Min 0 ns Program/Erase Valid to RY/BY# Delay Max tBUSY 30 30 30 35 45 50 ns ns µs 30 30 30 30 35 50 ns Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. 28 Am29F200B 21526D4 November 1, 2006 D A T A S H E E T AC CHARACTERISTICS Program Command Sequence (last two cycles) tAS tWC Addresses 555h Read Status Data (last two cycles) PA PA PA tAH CE# tCH OE# tWHWH1 tWP WE# tWPH tCS tDS tDH A0h Data PD Status tBUSY DOUT tRB RY/BY# tVCS VCC Notes: 1. PA = program address, PD = program data, DOUT is the true data at the program address. 2. Illustration shows device in word mode. Figure 13. November 1, 2006 21526D4 Program Operation Timings Am29F200B 29 D A T A S H E E T AC CHARACTERISTICS Erase Command Sequence (last two cycles) tAS tWC 2AAh Addresses Read Status Data VA SA VA 555h for chip erase tAH CE# tCH OE# tWP WE# tWPH tCS tWHWH2 tDS tDH Data 55h In Progress 30h Complete 10 for Chip Erase tBUSY tRB RY/BY# tVCS VCC Notes: 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (”see “Write Operation Status”). 2. Illustration shows device in word mode. Figure 14. 30 Chip/Sector Erase Operation Timings Am29F200B 21526D4 November 1, 2006 D A T A S H E E T AC CHARACTERISTICS tRC Addresses VA VA VA tACC tCE CE# tCH tOE OE# tOEH tDF WE# tOH High Z DQ7 Complement Complement DQ0–DQ6 Status Data Status Data Valid Data True High Z Valid Data True tBUSY RY/BY# Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Figure 15. Data# Polling Timings (During Embedded Algorithms) tRC Addresses VA VA VA VA tACC tCE CE# tCH tOE OE# tOEH tDF WE# tOH High Z DQ6/DQ2 tBUSY Valid Status Valid Status (first read) (second read) Valid Status Valid Data (stops toggling) RY/BY# Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle Figure 16. November 1, 2006 21526D4 Toggle Bit Timings (During Embedded Algorithms) Am29F200B 31 D A T A S H E E T AC CHARACTERISTICS Enter Embedded Erasing Erase Suspend Erase WE# Enter Erase Suspend Program Erase Resume Erase Suspend Program Erase Suspend Read Erase Complete Erase Erase Suspend Read DQ6 DQ2 Note: The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the erase-suspended sector. Figure 17. DQ2 vs. DQ6 Temporary Sector Unprotect Parameter JEDEC Std Description tVIDR VID Rise and Fall Time (See Note) tRSP RESET# Setup Time for Temporary Sector Unprotect All Speed Options Unit Min 500 ns Min 4 µs Note: Not 100% tested. 12 V RESET# 0 or 5 V 0 or 5 V tVIDR tVIDR Program or Erase Command Sequence CE# WE# tRSP RY/BY# Figure 18. 32 Temporary Sector Unprotect Timing Diagram Am29F200B 21526D4 November 1, 2006 D A T A S H E E T AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter Speed Options JEDEC Std Description tAVAV tWC Write Cycle Time (Note 1) Min tAVEL tAS Address Setup Time Min tELAX tAH Address Hold Time Min 45 45 45 45 45 50 ns tDVEH tDS Data Setup Time Min 25 25 25 30 45 50 ns tEHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE# Pulse Width Min tEHEL tCPH CE# Pulse Width High Min 20 Byte Typ 7 tWHWH1 tWHWH1 Word Typ 12 tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 1 Programming Operation (Note 2) -45 -50 -55 -70 -90 -120 Unit 45 50 55 70 90 120 ns 0 30 30 30 ns 35 45 50 ns ns µs sec Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. November 1, 2006 21526D4 Am29F200B 33 D A T A S H E E T AC CHARACTERISTICS 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase Data# Polling Addresses PA tWC tAS tAH tWH WE# tGHEL OE# tWHWH1 or 2 tCP CE# tWS tCPH tBUSY tDS tDH DQ7# Data tRH A0 for program 55 for erase DOUT PD for program 30 for sector erase 10 for chip erase RESET# RY/BY# Notes: 1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, DOUT = Array Data. 2. Figure indicates the last two bus cycles of the command sequence, with the device in word mode. Figure 19. 34 Alternate CE# Controlled Write Operation Timings Am29F200B 21526D4 November 1, 2006 D A T A S H E E T ERASE AND PROGRAMMING PERFORMANCE Limits Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 1 8 sec Chip Erase Time 5 Excludes 00h programming prior to erasure (Note 4) Byte Programming Time 7 300 µs Word Programming Time 12 500 µs Chip Programming Time (Note 3) 1.8 5.4 sec sec Excludes system-level overhead (Note 5) Notes: 1. Typical program and erase times assume the following conditions: 25×C, 5.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 4.5 V (VCC = 4.75 V for ±5% devices), 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum byte program time listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 1 for further information on command definitions. 6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Parameter Description Input Voltage with respect to VSS on all I/O pins VCC Current Min Max –1.0 V VCC + 1.0 V –100 mA +100 mA Note: Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time. TSOP AND SO PIN CAPACITANCE Parameter Symbol CIN Parameter Description Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Test Setup Typ Max Unit VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 8 10 pF Test Conditions Min Unit 150°C 10 Years 125°C 20 Years Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. DATA RETENTION Parameter Minimum Pattern Data Retention Time November 1, 2006 21526D4 Am29F200B 35 D A T A S H E E T PHYSICAL DIMENSIONS SO 044—44-Pin Small Outline Package Dwg rev AC; 10/99 36 Am29F200B 21526D4 November 1, 2006 D A T A S H E E T PHYSICAL DIMENSIONS TS 048—48-Pin Standard Thin Small Outline Package Dwg rev AA; 10/99 November 1, 2006 21526D4 Am29F200B 37 D A T A S H E E T REVISION SUMMARY Revision A (July 1998) Physical Dimensions Global Replaced figures with more detailed illustrations. Made formatting and layout consistent with other data sheets. Used updated common tables and diagrams Revision D (November 29, 2000) Added table of contents. Revision B (January 1999) Ordering Information Distinctive Characteristics Deleted burn-in option. Added bullet for 20-year data retention at 125°C Revision D (November 29, 2000) Ordering Information Added table of contents. Optional Processing: Deleted “B = Burn-in”. Ordering Information DC Characteristics—TTL/NMOS Compatible ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC specifications are tested with VCC = VCCmax”. DC Characteristics—CMOS Compatible Deleted burn-in option. Revision D+1 (June 14, 2004) Ordering Information ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC specifications are tested with VCC = VCCmax”. Added Pb-free OPNs. AC Characteristics Revision D+2 (February 16, 2006) Figure 15. Data# Polling Timings (During Embedded Algorithms): Added text to note. Global Figure 16. Toggle Bit Timings (During Embedded Algorithms): Added text to note. Deleted TSR048 48-pin Reverse TSOP option. Revision D3 (May 18, 2006) Added “Not recommended for new designs” note. Revision B+2 (July 2, 1999) AC Characteristics Global Added references to availability of device in Known Good Die (KGD) form. Changed tBUSY specification to maximium value. Revision D4 (November 1, 2006) Deleted “Not recommended for new designs” note. Revision C (November 12, 1999) AC Characteristics—Figure 13. Program Operations Timing and Figure 14. Chip/Sector Erase Operations Deleted tGHWL and changed OE# waveform to start at high. 38 Am29F200B 21526D4 November 1, 2006 D A T A S H E E T The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable ( i.e., submersible repeater and artificial satellite). Please note that FASL will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products. Trademarks Copyright © 2006 Spansion Inc. All rights reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof, are trademarks of Spansion Inc. Other company and product names used in this publication are for identification purposes only and may be trademarks of their respective companies. Copyright © 1998–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. November 1, 2006 21526D4 Am29F200B 39