SavantIC Semiconductor Product Specification BU426 BU426A Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Intended for use in switching-mode color TV supply systems PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BU426 VCBO Collector-base voltage 375 Emitter-base voltage IC V Open base 400 BU426A VEBO V 900 BU426 Collector-emitter voltage UNIT 800 Open emitter BU426A VCEO VALUE Open collector 10 V Collector current (DC) 6 A ICM Collector current (Pulse) 8 A IB Base current 3 A PC Collector power dissipation 113 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BU426 BU426A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS BU426 MIN TYP. MAX UNIT 375 IC=100mA; IB=0 BU426A V 400 VCEsat-1 Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=4A; IB=1.25A 3.0 V VBEsat-1 Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.4 V VBEsat-2 Base-emitter saturation voltage IC=4A; IB=1.25A 1.6 V BU426 VCE=800V ;VBE=0 TC=125 1.0 2.0 BU426A VCE=900V ;VBE=0 TC=125 1.0 2.0 10 ICES Collector cut-off current IEBO Emitter cut-off current VEB=10V; IC=0 hFE DC current gain IC=0.6A ; VCE=5V 30 mA mA 60 Switching times ton Turn-on time tstg Storage time tf Fall time IC=2.5A ; VCC=250V IB1=0.5A IC=2.5A ; VCC=250V IB1=0.5A; IB2=-1A 0.5 µs 3.5 µs 0.5 µs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.1 2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 BU426 BU426A