MOSFET SMD Type N-Channel MOSFET AO3422 (KO3422) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features ● RDS(ON) ＜ 160mΩ (VGS = 4.5V) 1 0.55 ● ID = 2.1 A (VGS = 4.5V) +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● VDS (V) = 55V 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.05 0.1 -0.01 +0.1 -0.1 ● RDS(ON) ＜ 200mΩ (VGS = 2.5V) 0-0.1 +0.1 0.38 -0.1 0.97 D 1. Gate 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 55 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range ID IDM TA=25℃ TA=70℃ t ≤ 10s Steady-State PD RthJA Unit V 2.1 1.7 A 10 1.25 0.8 W 100 150 RthJC 60 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO3422 (KO3422) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions ID=10 mA, VGS=0V Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V VGS(th) VDS=VGS , ID=250μA Gate Threshold Voltage Min Typ RDS(On) VDS=44V, VGS=0V 1 VDS=44V, VGS=0V, TJ=55℃ 5 VGS=4.5V, ID=2.1A 0.6 Forward Transconductance ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge Qg VGS=4.5V, VDS=5V VDS=5V, ID=2.1A 214 VGS=0V, VDS=25V, f=1MHz VGS=4.5V, VDS=27.5V, ID=2.1A VGS=10V, VDS=27.5V, RL=12Ω,RG=3Ω 3 2.6 3.3 trr Maximum Body-Diode Continuous Current IS VSD IF= 2.1A, dI/dt= 100A/us IS=1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking Marking AR** www.kexin.com.cn Ω nC 0.6 2.4 ns 16.5 2 tf Qrr pF 1.3 2.3 Body Diode Reverse Recovery Charge 300 12.6 VGS=0V, VDS=0V, f=1MHz td(on) Body Diode Reverse Recovery Time mΩ S 31 Turn-On DelayTime Diode Forward Voltage 2 11 0.8 Turn-Off Fall Time V A Qgs tr 2 10 Qgd td(off) nA 200 Gate Source Charge Turn-Off DelayTime ±100 210 TJ=125℃ Gate Drain Charge Turn-On Rise Time uA 160 VGS=2.5V, ID=1.5A On state drain current Unit V VGS=4.5V, ID=2.1A Static Drain-Source On-Resistance Max 55 20 30 17 nC 1 A 1 V MOSFET SMD Type N-Channel MOSFET AO3422 (KO3422) ■ Typical Characterisitics 8 10 10V 3.5V 8 6 2.5V ID(A) ID (A) VDS=5V 6 5V 4 4 125°C 2 VGS=2V 2 25°C 0 0 0 1 2 3 4 5 1 1.25 200 2 180 1.8 VGS=2.5V 160 140 120 VGS=4.5V 100 0 1 2 3 1.5 1.75 2 2.25 2.5 VGS(Volts) Figure 2: Transfer Characteristics Normalized On-Resistance RDS(ON) (mΩ) VDS (Volts) Fig 1: On-Region characteristics 4 VGS=4.5 1.6 1.4 VGS=2.5V 1.2 1 0.8 5 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 360 1E+00 ID=2.3A 125°C 260 125°C 1E-01 IS (A) RDS(ON) (mΩ) 310 210 160 1E-02 25°C 1E-03 110 25°C 1E-04 60 1E-05 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO3422 (KO3422) ■ Typical Characterisitics 400 5 360 VDS=27.5V ID=2.1A Ciss 320 Capacitance (pF) VGS (Volts) 4 3 2 280 240 200 160 Coss 120 Crss 80 1 40 0 0 0 1 2 0 3 Qg (nC) Figure 7: Gate-Charge Characteristics 100µs 0.1s 1.0 10ms 1s 10s 1ms DC 0.1 0.1 1 10 100 VDS (Volts) . Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 20 25 30 TJ(Max)=150°C TA=25°C 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 4 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=100°C/W 15 15 TJ(Max)=150°C TA=25°C Power (W) ID (Amps) 10.0 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 5 T Single Pulse 0.0001 www.kexin.com.cn 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000