ASI HF150-50F Npn silicon rf power transistor Datasheet

HF150-50F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF150-50F is Designed for
PACKAGE STYLE .500 4L FLG
FEATURES:
.112x45°
L
A
• PG = 14 dB min. at 150 W/30 MHz
• IMD3 = 100 dBc max. at 150 W (PEP)
• Omnigold™ Metalization System
FULL R
C
E
C
B
B
E
H
E
D
G
F
MAXIMUM RATINGS
IC
I J
10 A
VCBO
110 V
VCEO
55 V
VEBO
Ø.125 NOM.
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
.125 / 3.18
E
O
MAXIMUM
.125 / 3.18
B
4.0 V
K
F
.970 / 24.64
.980 / 24.89
PDISS
233 W @ TC = 25 C
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
TJ
-65 OC to +200 OC
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
.980 / 24.89
1.050 / 26.67
O
O
T STG
-65 C to +150 C
θ JC
0.75 OC/W
CHARACTERISTICS
SYMBOL
.280 / 7.11
K
L
ORDER CODE: ASI10612
TC = 25 OC
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV CBO
IC = 100 mA
110
V
BV CES
IC = 100 mA
110
V
BV CEO
IC = 100 mA
55
V
BV EBO
IE = 10 mA
4.0
V
ICEO
VCE = 30 V
5
mA
ICES
VCE = 60 V
5
mA
hFE
VCE = 6 V
43.5
---
Cob
VCB = 50 V
220
pF
GP
IMD3
ηC
VCE = 50 V
-30
dB
dBc
%
IC = 1.4 A
18
f = 1.0 MHz
14
ICQ = 100 mA
POUT = 150 W (PEP)
37
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
ERROR! REFERENCE SOURCE NOT FOUND.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • TELEX: 18-2651 • FAX (818) 765-3004
Similar pages