BCW66F ... BCW66H BCW66F ... BCW66H Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-07-31 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type Code 250 mW 2 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW66F ... BCW66H Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 45 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 75 V Collector-Base-voltage – Kollektor-Basis-Spannung C open VEB0 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 800 mA Peak Collector current – Kollektor-Spitzenstrom ICM 1000 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) DC current gain – Kollektor-Basis-Stromverhältnis 1 2 Min. Typ. Max. 2) VCE = 10 V, IC = 100 µA BCW66F BCW66G BCW66H hFE hFE hFE 35 50 80 – – – – – – VCE = 1 V, IC = 10 mA BCW66F BCW66G BCW66H hFE hFE hFE 75 100 180 – – – – – – VCE = 1 V, IC = 100 mA BCW66F BCW66G BCW66H hFE hFE hFE 100 160 250 160 250 350 250 400 630 VCE = 2 V, IC = 500 mA BCW66F BCW66G BCW66H hFE hFE hFE – – – 35 60 100 – – – Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BCW66F ... BCW66H Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. VCEsat VCEsat – – – – 300 mV 700 mV VBEsat VBEsat – – – – 1.25 V 2.0 V ICB0 ICB0 – – – – 20 nA 20 µA IEB0 – – 20 nA fT – 170 MHz – CCBO – 6 pF – CEBO – 60 pF – Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 45 V, (E open) VCE = 45 V, Tj = 125°C, (E open) Emitter-Base cutoff current VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 50 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking - Stempelung 2 1 2 RthA < 420 K/W 1) BCW68F ... BCW68H BCW66F = EF BCW66G = EG BCW66H = EH Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG