BAQ133, BAQ134, BAQ135 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES • Silicon planar diodes • Very low reverse current • Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers MECHANICAL DATA Case: QuadroMELF SOD-80 Weight: approx. 34 mg Cathode band color: black Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS BAQ133 VRRM = 40 V BAQ133-GS18 or BAQ133-GS08 - Single diode Tape and reel BAQ134 VRRM = 70 V BAQ134-GS18 or BAQ134-GS08 - Single diode Tape and reel BAQ135 VRRM = 140 V BAQ135-GS18 or BAQ135-GS08 - Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Repetitve peak reverse voltage Reverse voltage Peak forward surge current PART SYMBOL VALUE UNIT BAQ133 VRRM 40 V BAQ134 VRRM 70 V BAQ135 VRRM 140 V BAQ133 VR 30 V BAQ134 VR 60 V BAQ135 VR 125 V IFSM 2 A IF 200 mA tp = 1 μs Forward continuous current THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Junction temperature Storage temperature range Rev. 1.8, 31-Jul-12 TEST CONDITION SYMBOL VALUE UNIT On PC board 50 mm x 50 mm x 1.6 mm RthJA 500 K/W Tj 175 °C Tstg - 65 to + 175 °C Document Number: 85536 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAQ133, BAQ134, BAQ135 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage PART VF E 300 Ix, rated VR IR E 300 Ix, rated VR, Tj = 125 °C Reverse current MIN. TYP. 1 UNIT 1 V 3 nA 0.5 μA BAQ133 IR 0.5 1 nA E 300 Ix, VR = 30 V BAQ134 IR 0.5 1 nA E 300 Ix, VR = 60 V BAQ135 IR 0.5 1 nA BAQ133 V(BR) 40 V BAQ134 V(BR) 70 V BAQ135 V(BR) 140 Diode capacitance VR = 0, f = 1 MHz IR MAX. E 300 Ix, VR = 15V IR = 5 μA, tp/T = 0.01, tp = 0.3 ms Breakdown voltage SYMBOL IF = 100 mA CD V 3 pF TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 I R - Reverse Current (nA) V R = VRRM 1000 Scattering Limit 100 10 1 0 40 80 120 160 200 Tj - Junction Temperature (°C) 94 9079 Fig. 1 - Reverse Current vs. Junction Temperature I F - Forward Current (mA) 1000 Tj = 25 °C 100 Scattering Limit 10 1 0.1 0 94 9078 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.8, 31-Jul-12 Document Number: 85536 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAQ133, BAQ134, BAQ135 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF SOD-80 1.6 (0.063) 1.4 (0.055) 1. 7 (0 .0 gl as 6 7 ) s Cathode identification > R3 (R0.118) glass 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 2 (0.079) min. 1.25 (0.049) min. 5 (0.197) ref. 96 12071 Rev. 1.8, 31-Jul-12 Document Number: 85536 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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