FDS9934C Complementary Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. • Q1: 6.5 A, 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 43 mΩ @ VGS = 2.5 V. • Q2: –5 A, –20 V, RDS(ON) = 55 mΩ @ VGS = –4.5 V RDS(ON) = 90 mΩ @ VGS = –2.5 V These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. DD2 D1 D 5 DD2 DD1 Q2 4 6 3 Q1 G2 S2 G SO-8 Pin 1 SO-8 G1 S1 S S 7 2 8 1 S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Parameter Q1 Units Q2 Drain-Source Voltage 20 –20 V VGSS Gate-Source Voltage ±10 ±12 V ID Drain Current 6.5 –5 A 20 –30 VDSS – Continuous (Note 1a) – Pulsed PD Power Dissipation for Dual Operation Power Dissipation for Single Operation TJ, TSTG 2 (Note 1a) (Note 1b) 1 (Note 1c) 0.9 Operating and Storage Junction Temperature Range W 1.6 –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking FDS9934C 2006 Fairchild Semiconductor Corporation Device Reel Size Tape width Quantity FDS9934C 13’’ 12mm 2500 units FDS9934C Rev D(W) FDS9934C March 2006 TA = 25°C unless otherwise noted Symbol Test Conditions Parameter Type Min Typ Max Units Off Characteristics BVDSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = –250 µA ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = 16V, VGS = 0 V VDS = –16V, VGS = 0 V VGS = ±8 V, VDS = 0 V VGS = ±12 V, VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 20 –20 IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS(th) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Q1 Q2 Q1 Q2 Q1 0.6 –0.6 ∆VGS(th) ? ∆TJ RDS(on) VDS = VGS, ID = 250 µA VDS = VGS, ID = 250 µA ID = 250 uA, Referenced to 25°C ID = 250 uA, Referenced to 25°C VGS = 4.5 V, ID = 6.5 A VGS = 2.5 V, ID = 5.4 A VGS = 4.5 V, ID =6.5A, TJ=125°C VGS = –4.5 V, ID = –3.2 A VGS = –2.5 V, ID = –1.0 A VGS = –4.5 V,ID = –3.2 A, TJ=125°C VGS = 4.5V, VDS = 5 V VGS = –4.5 V, VDS = – 5 V VDS = –5 V, ID = 6.5 A VDS = 5 V, ID = – 5.5 A ∆BVDSS ∆TJ IDSS ID(on) On-State Drain Current gFS Forward Transcoductance 14 –14 mV/°C 1 –1 ±100 ±100 Q2 Q1 Q2 Q1 Q2 V 1 –0.9 –3 3 25 35 35 43 64 55 15 –16 1.5 –1.2 µA nA V mV/°C 30 43 50 55 90 76 mΩ mΩ A 22 14 S S 650 955 150 215 85 115 1.4 4.9 pF Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Q1 VDS = 10V, VGS = 0 V, f = 1.0 MHz Output Capacitance Q2 Reverse Transfer Capacitance VDS = –10 V, VGS = 0 V, f = 1.0 MHz Gate Resistance VGS = 15 mV, f = 1.0 MHz Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 pF pF Ω FDS9934C Rev D(W) FDS9934C Electrical Characteristics Symbol (continued) Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units (Note 2) Q1 VDD = 10 V, ID = 1 A, VGS = 4.5V, RGEN = 6Ω Q2 VDD = –6V, ID = –1A, VGS = –4.5V, RGEN = 6Ω Q1 VDS = 10 V, ID = 3 A, VGS = 4.5V Q2 VDS = –6 V, ID = –3.2 A,VGS = –4.5 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8 16 9 9 15 25 4 9 6.2 8.7 1.2 2.1 1.7 2.1 16 29 17 18 26 41 9 19 9 12 ns ns ns ns nC nC nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge trr Qrr VGS = 0 V, VGS = 0 V, Q1 IF = 6.5 A, Q2 IF = -3.2 A, IS = 1.3 A IS = -2.0 A (Note 2) (Note 2) diF/dt = 100 A/µs diF/dt = 100 A/µs Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 0.73 –0.8 15 20 5 7 1.3 –1.3 1.2 –1.2 A V nS nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°C/W when mounted on a .02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS9934C Rev D(W) FDS9934C Electrical Characteristics FDS9934C Typical Characteristics: Q1 (N-Channel) 20 2.4 VGS = 4.5V VGS = 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V ID, DRAIN CURRENT (A) 16 3.5 3.0V 12 8 2.0V 4 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.8 1.6 2.5V 1.4 3.0V 1.2 3.5V 4.0V 4.5V 1 2 0 Figure 1. On-Region Characteristics. 5 10 ID, DIRAIN CURRENT (A) 15 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.11 1.6 ID = 6.5A VGS = 4.5V ID = 3.25A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 0.8 0 1.4 1.2 1 0.8 0.6 0.09 0.07 o TA = 125 C 0.05 0.03 TA = 25oC 0.01 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 1 150 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 100 o TA = -55 C IS, REVERSE DRAIN CURRENT (A) VDS = 5V o 125 C ID, DRAIN CURRENT (A) 2.2 15 25oC 10 5 VGS = 0V 10 o TA = 125 C 1 25oC 0.1 o -55 C 0.01 0.001 0.0001 0 0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS9934C Rev D(W) FDS9934C Typical Characteristics: Q1 (N-Channel) 1000 VDS = 5V ID = 3 A f = 1 MHz VGS = 0 V 15V 800 4 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 600 Ciss 400 Coss 1 200 0 0 Crss 0 1 2 3 4 5 6 7 8 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100 100µs RDS(ON) LIMIT 1ms 10ms 100ms 1s 10 10s DC 1 0.1 20 VGS = 4.5V SINGLE PULSE RθJA = 135oC/W TA = 25oC 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. 100 SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 10. Single Pulse Maximum Power Dissipation. FDS9934C Rev D(W) FDS9934C Typical Characteristics: Q2 (P-Channel) 1.8 30 -4.0V V 20 VGS=-2.5V -3.5V V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5V -3.0V -2.5V 10 -2.0V 0 1.6 1.4 -3.0V -3.5V 1.2 -4.0V -4.5V 1 0.8 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 6 12 18 -ID, DRAIN CURRENT (A) 24 30 Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 0.14 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -2.5A ID = -5A VGS = -4.5V 1.3 1.2 1.1 1 0.9 0.1 0.08 o TA = 125 C 0.06 TA = 25oC 0.04 0.02 0.8 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 0 150 Figure 13. On-Resistance Variation with Temperature. 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 30 VGS =0V o 125 C -IS, REVERSE DRAIN CURRENT (A) TA = -55oC VDS = -5V 25 -ID, DRAIN CURRENT (A) 0.12 25oC 20 15 10 5 10 1 o TA = 125 C 0.1 25oC 0.01 -55oC 0.001 0.0001 0 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics. 5 0 0.4 0.8 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS9934C Rev D(W) FDS9934C Typical Characteristics: Q2 (P-Channel) 1600 ID = -5A VDS = -4V f = 1 MHz VGS = 0 V -8V 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 -6V 3 2 1200 Ciss 800 Coss 400 1 Crss 0 0 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 0 Figure 17. Gate Charge Characteristics. 20 Figure 18. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) 100 100µs RDS(ON) LIMIT 1ms 10ms 10 100ms 1s 10s 1 DC VGS = -4.5V SINGLE PULSE RθJA = 135oC/W 0.1 o TA = 25 C 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 Figure 19. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 20. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 RθJA = 135 C/W 0.1 o 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18