AP4511GD
RoHS-compliant Product
Advanced Power
Electronics Corp.
MODE POWER MOSFET
D2
▼ Low Gate Charge
▼ Fast Switching Speed
N AND P-CHANNEL ENHANCEMENT
N-CH BVDSS
D2
D1
35V
RDS(ON)
D1
▼ PDIP-8 Package
25mΩ
ID
G2
P-CH BVDSS
S2
PDIP-8
7A
-35V
G1
S1
Description
RDS(ON)
40mΩ
ID
-6.1A
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
D1
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
35
-35
V
±20
±20
V
Continuous Drain Current
3
7
-6.1
A
Continuous Drain Current
3
5.7
-5
A
30
-30
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
200805262
AP4511GD
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
Min.
Typ.
Max. Units
35
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=7A
-
20
25
mΩ
VGS=4.5V, ID=5A
-
30
37
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
9
-
S
IDSS
Drain-Source Leakage Current
VDS=35V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=28V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=7A
-
11
18
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=28V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
2
td(on)
Turn-on Delay Time
VDS=18V
-
12
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=18Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
830
1330
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=7A, VGS=0V
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
nC
2
AP4511GD
P-CH Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient
RDS(ON)
Min.
Typ.
-35
-
-
V
Reference to 25℃,ID=-1mA
-
-0.02
-
V/℃
VGS=-10V, ID=-6A
-
35
40
mΩ
VGS=-4.5V, ID=-4A
-
53
60
mΩ
VGS=0V, ID=-250uA
2
Static Drain-Source On-Resistance
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
9
-
S
IDSS
Drain-Source Leakage Current
VDS=-35V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=-28V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-6A
-
10
16
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-28V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6
-
nC
VDS=-18V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
26
-
ns
tf
Fall Time
RD=18Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
690
1100
pF
Coss
Output Capacitance
VDS=-25V
-
165
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.2
7.8
Ω
Min.
Typ.
IS=-1.7A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-6A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
12
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board , t <10sec ; 90℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4511GD
N-Channel
50
50
T A = 25 o C
40
ID , Drain Current (A)
ID , Drain Current (A)
40
30
4.5V
20
V G =3.0V
10
30
5.0V
20
4.5V
V G =3.0V
10
0
0
0
1
2
3
4
0
5
V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
1.8
ID=5A
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ )
10V
7.0V
T A = 150 o C
10V
7.0V
5.0V
60
40
ID=7A
V G =10V
1.4
1.0
0.6
20
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
Normalized VGS(th) (V)
6
IS(A)
4
T j =150 o C
T j =25 o C
2
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4511GD
N-Channel
f=1.0MHz
1000
C iss
I D =7A
V DS =28V
12
C (pF)
VGS , Gate to Source Voltage (V)
16
8
C oss
C rss
100
4
0
10
0
5
10
15
20
25
1
5
9
Q G , Total Gate Charge (nC)
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
Normalized Thermal Response (Rthja)
100
ID (A)
13
100us
1ms
1
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =90o C/W
DC
0.01
0.001
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
ID , Drain Current (A)
V DS =5V
QG
20
o
4.5V
o
T j =25 C
T j =150 C
QGS
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
AP4511GD
P-Channel
50
50
o
-10V
-7.0V
T A = 25 C
40
-ID , Drain Current (A)
-ID , Drain Current (A)
40
-5.0V
-4.5V
30
20
V G = - 3.0V
-5.0V
30
-4.5V
20
V G = - 3.0V
10
10
0
0
0
1
2
3
4
0
5
-V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
110
1.4
I D =-6A
V G =-10V
I D = -4 A
Normalized RDS(ON)
T A =25 o C
90
RDS(ON) (mΩ)
-10V
-7.0V
o
T A = 150 C
70
1.2
1.0
0.8
50
0.6
30
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6
Normalized -VGS(th) (V)
1.6
-IS(A)
4
T j =150 o C
T j =25 o C
2
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4511GD
P-Channel
f=1.0MHz
10000
I D = -6 A
V DS = - 28V
12
C (pF)
-VGS , Gate to Source Voltage (V)
16
8
1000
C iss
4
C oss
C rss
0
100
0
5
10
15
20
1
25
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
100us
10
1ms
10ms
1
100ms
1s
0.1
T c =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthja)
100
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=90 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
20
QG
T j =150 o C
-4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7
ADVANCED POWER ELECTRONICS CORP.
Package Outline : DIP-8
Millimeters
SYMBOLS
E
A
A2
A1
B2
D
L
B
B1
e
MIN
NOM
MAX
A
3.60
4.50
5.40
A1
0.38
----
----
A2
B
B1
B2
C
D
2.90
3.95
5.00
0.36
0.46
0.56
1.10
1.45
1.80
0.76
0.98
1.20
0.20
0.28
0.36
9.00
9.60
10.20
E
6.10
6.65
7.20
E1
7.62
7.94
8.26
E2
8.30
9.65
11.00
2.540 BSC
e
E1
L
C
3.18
----
----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
E2
Part Marking Information & Packing : DIP-8
4511GD
YWWSSS
Part Number
Package Code
meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
8