AOB418 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOB418 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOB418 is Pb-free (meets ROHS & Sony 259 specifications). AOB418L is a Green Product ordering option. AOv and AOB418L are electrically identical. VDS (V) = 30V ID = 110A (VGS = 10V) RDS(ON) < 6mΩ (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 4.5V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TA=25°C G Pulsed Drain Current Avalanche Current C C TC=25°C Power Dissipation B A V Junction and Storage Temperature Range 200 IAR 40 A 220 mJ EAR 100 W 50 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 68 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead ±12 ID IDM PD TC=100°C TA=25°C Power Dissipation Units V 110 TA=100°C B Repetitive avalanche energy L=0.1mH Maximum 30 RθJA RθJL Typ 8.1 33 0.84 °C Max 12 40 1.5 Units °C/W °C/W °C/W AOB418 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 85 TJ=55°C nA 2 V 4.9 6 8.4 10.5 VGS=4.5V, I D=30A 5.9 7.2 VDS=5V, ID=30A 103 TJ=125°C gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, V DS=15V, I D=30A VGS=10V, VDS=15V, RL=0.5Ω, RGEN=3Ω A mΩ mΩ S 0.73 1 V 110 A 2100 pF 536 pF 165 pF 0.95 Ω 19.6 nC 3.6 nC 8 nC 5.9 ns 15.9 ns 34 ns 20 ns ns nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/µs 32.5 Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 26 Qrr µA 100 Static Drain-Source On-Resistance Coss 5 1.5 VGS=10V, I D=30A Crss Units V VDS=24V, VGS=0V Zero Gate Voltage Drain Current IS Max 30 IDSS RDS(ON) Typ A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on steady-state RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOB418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 3.5V 50 50 VDS=5V 3V 40 125°C ID(A) ID (A) 40 30 30 25°C 20 20 VGS=2.5V 10 10 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 7.5 1.8 6.5 Normalized On-Resistance 7 RDS(ON) (mΩ) 2 VGS=4.5V 6 5.5 VGS=10V 5 ID=30A 1.6 VGS=10V 1.4 VGS=4.5V 1.2 1 4.5 0 10 20 30 40 50 0.8 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 20 1.0E+02 1.0E+01 16 125°C 1.0E+00 IS (A) ID=30A RDS(ON) (mΩ) 75 12 1.0E-01 25°C 1.0E-02 125°C 1.0E-03 8 25°C 1.0E-04 1.0E-05 4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOB418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 5 VDS=15V ID=30A 3000 Capacitance (pF) VGS (Volts) 4 3 2 2500 Ciss 2000 1500 Coss 1000 1 500 0 Crss 0 0 5 10 15 20 25 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 100 RDS(ON) limited 100 10µs 1ms 10ms 100µs 0.1s 10 1s 1 0 0.01 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VDS (Volts) 10 40 20 DC 0.1 0.1 60 10s TJ(Max)=150°C TA=25°C 1 TJ(Max)=150°C TA=25°C 80 Power (W) ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 1000 ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 1000 AOB418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 100 Power Dissipation (W) ID(A), Peak Avalanche Current 120 80 60 tA = 40 L⋅ ID BV − V DD 20 80 60 40 20 0 0.00001 0 0.0001 0.001 0.01 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 100 80 60 40 20 0 0 25 50 75 100 125 150 T CASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 T CASE (°C) Figure 13: Power De-rating (Note B) 120 Current rating ID(A) 100 175 175