Doc No. TT4-EA-11728 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2143X0L DRA2143X0L Silicon PNP epitaxial planar type Unit: mm For digital circuit Complementary to DRC2143X 2.9 0.4 0.16 3 Features 1.5 2.8 Low collector-emitter saturation voltage Vce(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 1.1 Marking Symbol: L6 (0.95)(0.95) 1.9 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Operating ambient temperature Storage temperature VCBO VCEO IC PT Tj Topr Tstg Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open) VCEO Collector-base cutoff current (Emitter open) ICBO Collector-emitter cutoff current (Base open) ICEO Emitter-base cutoff current (Collector open) IEBO Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) Vi(on) Input voltage Vi(off) Input resistance R1 Resistance ratio R1/R2 Panasonic JEITA Code Rating Unit -50 -50 -100 200 150 -40 to +85 -55 to +150 V V mA mW °C °C °C Conditions IC = -10 μA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = -0.5 mA VCE = -0.2 V, IC = -5 mA VCE = -5 V, IC = -100 μA Mini3-G3-B SC-59A TO-236AA/SOT-23 Internal Connection C R1 B R2 E Resistance value R1 R2 4.7 10 Min Typ Max -50 -50 -0.1 -0.5 -1.0 30 -0.25 -1.7 -0.6 -30% 4.7 +30% 0.37 0.47 0.57 k k Unit V V μA μA mA V V V k - Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Page 1 of 3 Established : 2009-10-29 Revised : 2014-01-23 Doc No. TT4-EA-11728 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2143X0L Technical Data ( reference ) IC - VCE PT - Ta -0.12 250 IB = -800 μA Ta = 25 ℃ Collector current IC (A) Total power dissipation PT (mW) -0.1 200 150 100 50 -700 μA -600 μA -0.08 -500 μA -400 μA -0.06 -300 μA -0.04 -200 μA -0.02 -100 μA -0 0 0 20 40 60 80 -0 100 120 140 160 180 200 -2 -4 Ambient temperature Ta (℃) hFE - IC -10 -12 VCE(sat) - IC VCE = -10 V 200 IC/IB = 20 Ta = 85 ℃ 150 25 ℃ 100 -40 ℃ 50 0 -0.0001 -0.001 -0.01 Collector current IC (A) -0.1 Collector-emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE -8 -10 250 -1 Ta = 85 ℃ 25 ℃ -0.1 -40 ℃ -0.01 -0.0001 -0.001 -0.01 Collector current IC (A) Io - VIN -0.1 VIN - Io -100 -1.0E-02 Vo = -5 V Vo = -0.2 V Ta = 85 ℃ -1.0E-03 -1.0E-04 Input voltage VIN (V) Output current Io (A) -6 Collector-emitter voltage VCE (V) 25 ℃ -1.0E-05 -40 ℃ -0.5 -1 -1.5 Input voltage VIN (V) Ta = -40 ℃ 25 ℃ -1 85 ℃ -1.0E-06 -0 -10 -2 -0.1 -0.0001 -0.001 -0.01 Output current Io (A) -0.1 Page 2 of 3 Established : 2009-10-29 Revised : 2014-01-23 Doc No. TT4-EA-11728 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2143X0L Mini3-G3-B Unit: mm +0.20 2.90-0.05 +0.10 0.16-0.06 +0.10 0.40-0.05 (5°) +0.2 2 1.9±0.1 0.4±0.2 (0.95) (0.95) (0.65) 1 2.8-0.3 +0.25 1.50-0.05 3 +0.3 1.1-0.1 +0.2 0 to 0.1 1.1-0.1 (10°) Land Pattern (Reference) (Unit: mm) 2.4 1.0 1.0 1.9 Page 3 of 3 Established : 2009-10-29 Revised : 2014-01-23 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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