ON EFC4615R N-channel silicon mosfet general-purpose switching device application Datasheet

Ordering number : ENA1629
ON Semiconductor
DATA SHEET
N-Channel Silicon MOSFET
EFC4615R
General-Purpose Switching Device
Applications
Features
•
•
•
2.5V drive
Best suited for LiB charging and discharging switch
Common-drain type
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Source-to-Source Voltage
Conditions
Ratings
VSSS
VGSS
Gate-to-Source Voltage
Source Current (DC)
IS
ISP
Source Current (Pulse)
Total Dissipation
Channel Temperature
PT
Tch
Storage Temperature
Tstg
Unit
24
V
±12
V
6
A
PW≤10μs, duty cycle≤1%
60
A
When mounted on ceramic substrate (5000mm2×0.8mm)
1.6
W
150
°C
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7067-001
• Package
: EFCP
• JEITA, JEDEC
:• Minimum Packing Quantity : 5,000 pcs./reel
1.46
3
Taping Type : TR
Marking
1.46
4
FQ
TR
LOT No.
2
0.22
1
Electrical Connection
0.37
0.15
1
0.65
Rg
0.65
2
1
2
4
3
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
0.3
Rg
3
SANYO : EFCP1515-4CC-037
Rg=200Ω
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
4
Publication Order Number:
EFC4615R/D
EFC4615R
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Source-to-Source Breakdown Voltage
V(BR)SSS
Zero-Gate Voltage Source Current
ISSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
Forward Transfer Admittance
Ratings
Conditions
min
typ
Unit
max
24
Test Circuit 1
VGS(off)
VGS=±8V, VSS=0V
VSS=10V, IS=1mA
Test Circuit 3
| yfs |
VSS=10V, IS=3A
Test Circuit 4
RSS(on)1
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
Test Circuit 5
19
27
31
mΩ
RSS(on)2
Test Circuit 5
21
28
33
mΩ
RSS(on)3
IS=3A, VGS=3.1V
Test Circuit 5
24
33
44
mΩ
RSS(on)4
IS=3A, VGS=2.5V
Test Circuit 5
28
39
52
mΩ
Turn-ON Delay Time
td(on)
See specified Test Circuit.
Test Circuit 7
13
ns
Rise Time
tr
See specified Test Circuit.
Test Circuit 7
235
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
Test Circuit 7
335
ns
Fall Time
tf
See specified Test Circuit.
Test Circuit 7
360
ns
Total Gate Charge
Qg
VSS=10V, VGS=4.5V, IS=6A
8.8
nC
Forward Source-to-Source Voltage
VF(S-S)
IS=6A, VGS=0V
Static Source-to-Source On-State Resistance
Test Circuit 1
V
IS=1mA, VGS=0V
VSS=20V, VGS=0V
Test Circuit 2
0.5
1
μA
±10
μA
1.3
5.4
1
Test Circuit 6
1.2
Test circuits are example of measuring FET1 side
Test Circuit 1
VSSS / ISSS
Test Circuit 2
IGSS(+) / (--)
S2
S2
G2
G2
G1
G1
S1
S1
IT11565
Test Circuit 3
VGS(off)
IT11566
Test Circuit 4
| yfs |
S2
S2
G2
G2
10V 1mA
G1
G1
S1
S1
IT11567
IT11568
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
Rev. 0 | Page 2 of 4 | www.onsemi.com
V
S
V
EFC4615R
Test Circuit 5
RSS(on)
Test Circuit 6
VF(S-S)
S2
S2
4.5V
G2
G2
G1
G1
S1
S1
IT11569
IT11570
Test Circuit 8
Qg
Test Circuit 7
td(on), tr, td(off), tf
VDD=10V
S2
IS=3A
RL=3.33Ω
V
S2 OUT
VIN
G2
G2
G1
PW=10μs
D.C.≤1%
G1
S1
S1
IT11571
IS -- VGS
5.0
Static Source-to-Source
On-State Resistance, RSS(on) -- mΩ
VSS=10V
4.5
3.5
3.0
2.5
2.0
25°C
1.0
--25°C
Ta=
75°C
0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Gate-to-Source Voltage, VGS -- V
RSS(on) -- Ta
Static Source-to-Source
On-State Resistance, RSS(on) -- mΩ
70
=4.
VGS
3A
, I S=
2.5V
=3A
=
V, I S
VGS
=3.1
S
VG
A
, I S=3
=4.5V
S
VG
30
20
10
0
--60
--40 --20
0
20
40
60
80
50
40
30
20
0
2
4
100
Ambient Temperature, Ta -- °C
120
140
160
6
8
10
Gate-to-Source Voltage, VGS -- V
IT15253
3A
I =
0V, S
40
60
IT15254
| yfs | -- IS
10
60
50
Ta=25°C
IS=3A
70
10
1.6
Forward Transfer Admittance, | yfs | -- S
Source Current, IS -- A
4.0
1.5
IT15409
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
RSS(on) -- VGS
80
VSS=10V
7
5
Ta=
3
°C
--25
C
75°
25
2
°C
1.0
7
0.1
IT15255
Rev. 0 | Page 3 of 4 | www.onsemi.com
2
3
5
7
1.0
2
Source Current, IS -- A
3
5
7
10
IT15256
EFC4615R
IS -- VF(S-S)
Switching Time, SW Time -- ns
0.1
7
5
3
2
0.01
7
5
3
2
0
0.2
0.4
0.6
0.8
1.0
VGS -- Qg
td(off)
3
tf
2
100
tr
7
5
3
2
td(on)
7
0.01
1.2
3.0
2.5
2.0
1.5
1.0
0.5
1
2
3
4
5
6
7
8
Total Gate Charge, Qg -- nC
PT -- Ta
1.8
5 7 0.1
2
9
10
IT15260
3
5 7 1.0
2
3
5 7 10
100
7
5
3
2
10
7
5
3
2
ISP=60A (PW≤10μs)
10
0μ
1m
s
s
IS=6A
10
ms
10
DC
1.0
7
5
3
2
0.1
7
5
3
2
IT15258
ASO
2
3.5
0
3
Source Current, IS -- A
VSS=10V
IS=6A
4.0
2
IT15257
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
4.5
0m
s
op
era
Operation in this area
is limited by RSS(on).
tio
n
Ta=25°C
Single pulse
When mounted on ceramic substrate (5000mm2×0.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Source-to-Source Voltage, VSS -- V
2 3
5
IT15534
When mounted on ceramic substrate
(5000mm2×0.8mm)
1.6
Total Dissipation, PT -- W
5
10
Forward Source-to-Source Voltage, VF(S-S) -- V
0
VSS=10V
VGS=4.5V
7
1.0
7
5
3
2
0.001
SW Time -- IS
1000
VGS=0V
Ta=7
5°C
25°C
--25°C
Source Current, IS -- A
10
7
5
3
2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15535
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