Freescale MW6IC1940GNBR1 Rf ldmos wideband integrated power amplifier Datasheet

Freescale Semiconductor
Technical Data
Document Number: MW6IC1940N--1
Rev. 3.1, 12/2009
ARCHIVE INFORMATION
The MW6IC1940GNB wideband integrated circuit is designed with on--chip
matching that makes it usable from 1920 to 2000 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
MW6IC1940GNBR1
Final Application
1920--2000 MHz, 40 W, 28 V
2 x W--CDMA
• Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 200 mA,
IDQ2 = 440 mA, Pout = 4.5 Watts Avg., f = 1922.5 MHz, Channel Bandwidth =
RF LDMOS WIDEBAND
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
INTEGRATED POWER AMPLIFIER
Power Gain — 28.5 dB
Power Added Efficiency — 13.5%
IM3 @ 10 MHz Offset — --43 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — --46 dBc in 3.84 MHz Bandwidth
Driver Applications
• Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 200 mA,
IDQ2 = 350 mA, Pout = 26 dBm, Full Frequency Band (1920--2000 MHz),
Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on
CCDF.
Power Gain — 27 dB
IM3 @ 10 MHz Offset — --59 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — --62 dBc in 3.84 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 1960 MHz, 40 Watts CW
Output Power
CASE 1329A--04
TO--272 WB--16 GULL
• Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 20 W CW
Pout.
PLASTIC
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Scattering Parameters
• On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
RFin
RFout/VDS2
VGS1
Quiescent Current
Temperature Compensation (1)
VGS2
VDS1
GND
VDS1
NC
NC
NC
1
2
3
4
5
16
15
GND
NC
RFin
6
14
NC
VGS1
VGS2
VDS1
GND
7
8
9
10
11
RFout /
VDS2
13
12
NC
GND
ARCHIVE INFORMATION
RF LDMOS Wideband Integrated
Power Amplifier
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2006--2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6IC1940GNBR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +6
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
TC
150
°C
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
TJ
225
°C
Pin
20
dBm
Symbol
Value (2,3)
Table 2. Thermal Characteristics
Thermal Resistance, Junction to Case
W--CDMA Application
(Pout = 4.5 W Avg.)
RθJC
Stage 1, 28 Vdc, IDQ1 = 200 mA
Stage 2, 28 Vdc, IDQ2 = 440 mA
Unit
°C/W
2.1
1.2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Wideband 1920--2000 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 200 mA, IDQ2 = 440 mA,
Pout = 4.5 W Avg., f1 = 1922.5 MHz, f2 = 1932.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in
3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
26
28.5
31.5
dB
Power Added Efficiency
PAE
12.5
13.5
—
%
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
—
--43
--40
dBc
ACPR
—
--46
--43
dBc
IRL
—
--15
--10
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Characteristic
(continued)
MW6IC1940GNBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, 1920--2000 MHz
VBW
Quiescent Current Accuracy over Temperature
with 18 kΩ Gate Feed Resistors (--10 to 85°C) (1)
30
—
∆IQT
—
±5
—
%
Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW
GF
—
0.75
—
dB
Average Deviation from Linear Phase in 30 MHz Bandwidth
@ Pout = 1 W CW
Φ
—
±1
—
°
Delay
—
2.5
—
ns
∆Φ
—
±10
—
°
Average Group Delay @ Pout = 1 W CW Including Output Matching
ARCHIVE INFORMATION
MHz
—
Part--to--Part Insertion Phase Variation @ Pout = 1 W CW,
Six Sigma Window
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 240 mA, IDQ2 = 440 mA, 1920--2000 MHz
Saturated Pulsed Output Power
(12 μsec(on), 1% Duty Cycle)
Psat
—
60
—
W
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or
AN1987.
ARCHIVE INFORMATION
Video Bandwidth @ 40 W PEP Pout where IM3 = --30 dBc
(Tone Spacing from 100 kHz to VBW) ∆IMD3 = IMD3 @ VBW
frequency -- IMD3 @ 100 kHz <1 dBc (both sidebands)
MW6IC1940GNBR1
RF Device Data
Freescale Semiconductor
3
VD2
C1
RF
INPUT
Z1
Z2
VG1
R1
VG2
R2
1
2
3 NC
4 NC
5 NC
DUT
14
7 NC
8
9
C10
C2
Z9
6
10
11
16
NC 15
Z3
Z4
C4
Z5
C5
Quiescent Current
Temperature
Compensation
ARCHIVE INFORMATION
Z7
C8
C7
Z8
C9
Z10
NC 13
12
C11
Z1
Z2
Z3
Z4*
Z5*
Z6*
C6 Z6
2.20″ x 0.09″ Microstrip
0.13″ x 0.04″ Microstrip
0.17″ x 0.41″ Microstrip
0.20″ x 0.41″ Microstrip
0.11″ x 0.41″ Microstrip
0.06″ x 0.41″ Microstrip
Z7*
Z8*
Z9, Z10
PCB
C3
0.98″ x 0.082″ Microstrip
0.76″ x 0.082″ Microstrip
0.08″ x 0.079″ Microstrip
Taconic TLX8--0300, 0.030″, εr = 2.55
* Variable for tuning
Figure 3. MW6IC1940GNBR1 Test Circuit Schematic
Table 6. MW6IC1940GNBR1 Test Circuit Component Designations and Values
Part
RF
OUTPUT
Description
Part Number
Manufacturer
C1, C2, C3
2.2 μF Chip Capacitors
C3225X5R1H225MT
TDK
C4, C5, C6, C7
0.5 pF Chip Capacitors
ATC100B0R5BT500XT
ATC
C8
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C9
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
C10, C11
10 pF Chip Capacitors
ATC100B100JT500XT
ATC
R1
4.7 kΩ, 1/4 W Chip Resistor
CRCW12064701FKEA
Vishay
R2
3.3 kΩ, 1/4 W Chip Resistor
CRCW12063301FKEA
Vishay
ARCHIVE INFORMATION
VD1
MW6IC1940GNBR1
4
RF Device Data
Freescale Semiconductor
VD1
C10
VD2
C2
VG1
C4 C6
C8
C9
C5
C7
R1
R2
C11
C3
VG2
Figure 4. MW6IC1940GNBR1 Test Circuit Component Layout
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C1
CUT OUT AREA
MW6IC1940NB Rev. 0
MW6IC1940GNBR1
RF Device Data
Freescale Semiconductor
5
Gps, POWER GAIN (dB)
28
12
VDD = 28 Vdc, Pout = 4.5 W (Avg.)
IDQ1 = 200 mA, IDQ2 = 440 mA, 2--Carrier
W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
27
26
IRL
25
24
23
11
10
--45
IM3
--47
--49
ACPR
22
1920
1940
--51
2000
1980
1960
--14
--16
--18
--20
--22
f, FREQUENCY (MHz)
29
PAE
VDD = 28 Vdc, Pout = 26 dBm (Avg.)
IDQ1 = 200 mA, IDQ2 = 350 mA, 2--Carrier
W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
Gps
28
27
26
2
1
--55
--60
ACPR
IRL
--65
IM3
--70
25
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
ACPR (dBc), IM3 (dBc)
Gps, POWER GAIN (dB)
30
--12
--14
--16
--18
--20
IRL, INPUT RETURN LOSS (dB)
3
31
PAE, POWER ADDED
EFFICIENCY (%)
Figure 5. 2--Carrier W--CDMA Wideband Performance @ Pout = 4.5 Watts Avg.
f, FREQUENCY (MHz)
Figure 6. 2--Carrier W--CDMA Wideband Performance @ Pout = 26 dBm Avg.
30
30
IDQ2 = 660 mA
29
28
550 mA
440 mA
27
330 mA
26
220 mA
25
24
VDD = 28 Vdc, IDQ1 = 200 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
23
22
1
10
IDQ1 = 300 mA
29
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
ARCHIVE INFORMATION
Gps
ARCHIVE INFORMATION
13
29
IRL, INPUT RETURN LOSS (dB)
14
PAE
IM3 (dBc), ACPR (dBc)
30
PAE, POWER ADDED
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
28
200 mA
150 mA
27
26
100 mA
25
24
VDD = 28 Vdc, IDQ2 = 440 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
23
22
100
200
250 mA
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Two--Tone Power Gain versus
Output Power @ IDQ1 = 200 mA
Figure 8. Two--Tone Power Gain versus
Output Power @ IDQ2 = 440 mA
200
MW6IC1940GNBR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
--30
655 mA
--35
550 mA
--40
440 mA
330 mA
--45
--50
VDD = 28 Vdc, IDQ1 = 200 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--55
10
1
--25
--35
150 mA
--40
300 mA
--45
200 mA
250 mA
VDD = 28 Vdc, IDQ2 = 440 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--50
--55
--60
100
IDQ1 = 100 mA
--30
1
10
Figure 10. Third Order Intermodulation Distortion
versus Output Power @ IDQ2 = 440 mA
--15
VDD = 28 Vdc, IDQ1 = 200 mA, IDQ2 = 440 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--20
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 9. Third Order Intermodulation Distortion
versus Output Power @ IDQ1 = 200 mA
--10
--30
3rd Order
--40
5th Order
--50
7th Order
--60
10
1
100
VDD = 28 Vdc, Pout = 40 W (PEP), IDQ1 = 200 mA,
IDQ2 = 440 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
--18
--21
--24
--27
IM3--U
--33
--36
Figure 12. Intermodulation Distortion Products
versus Tone Spacing
Ideal
52
P3dB = 47.4 dBm (55 W)
51
50
49
P1dB = 46.9 dBm (49 W)
48
Actual
VDD = 28 Vdc
IDQ1 = 200 mA, IDQ2 = 440 mA
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 1965 MHz
47
46
45
44
18
19
20
21
22
23
24
25
26
27
28
Pin, INPUT POWER (dBm)
Figure 13. Pulsed CW Output Power versus
Input Power
29
PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (dBm)
53
100
10
TWO--TONE SPACING (MHz)
Pout, OUTPUT POWER (WATTS) PEP
P6dB = 47.7 dBm (59 W)
IM3--L
--30
1
Figure 11. Intermodulation Distortion
Products versus Output Power
54
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
45
PAE
VDD = 28 Vdc, IDQ1 = 200 mA, IDQ2 = 440 mA
f1 = 1955 MHz, f2 = 1965 MHz, 2--Carrier
W--CDMA, 10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
40
35
30
--15
IM3 --20
ACPR --25
--30
25
Gps
--35
20
--40
15
--45
10
--50
5
--55
0
0.5
1
10
60
ARCHIVE INFORMATION
IDQ2 = 200 mA
IM3 (dBc), ACPR (dBc)
--25
--60
ARCHIVE INFORMATION
--20
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--20
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 14. 2--Carrier W--CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus
Output Power
MW6IC1940GNBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
60
85_C 40
25_C
26
30
85_C
20
24
22
VDD = 28 Vdc
IDQ1 = 200 mA, IDQ2 = 440 mA
f = 1960 MHz
PAE
1
28
32 V
24
28 V
22
VDD = 24 V
0
20
100
10
26
0
20
10
34
5
32
10
0
0
--5
VDD = 28 Vdc
Pout = 23 dBm CW
IDQ1 = 200 mA
IDQ2 = 440 mA
S11
--20
--30
1000
1500
2000
2500
--10
--15
Gps, POWER GAIN (dB)
S21
10
S11 (dB)
30
--10
60
70
80
30
25_C
28
26
24
--20
3000
TC = --30_C
85_C
VDD = 28 Vdc, Pout = 4.5 W Avg.
IDQ1 = 200 mA, IDQ2 = 440 mA
Two--Tone Measurements
22
1800
1840
1880
f, FREQUENCY (MHz)
1920
1960
2000
f, FREQUENCY (MHz)
Figure 17. Broadband Frequency Response
Figure 18. Power Gain versus Frequency
1010
109
MTTF (HOURS)
50
Figure 16. Power Gain versus Output Power
Figure 15. Power Gain and Power Added
Efficiency versus Output Power
20
40
30
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
S21 (dB)
ARCHIVE INFORMATION
20
10
IDQ1 = 200 mA
IDQ2 = 440 mA
f = 1960 MHz
1st Stage
108
ARCHIVE INFORMATION
25_C 50
Gps
28
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
30
30
--30_C
TC = --30_C
Gps, POWER GAIN (dB)
32
2nd Stage
107
106
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 4.5 W Avg., and PAE = 13.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
Figure 19. MTTF versus Junction Temperature
MW6IC1940GNBR1
8
RF Device Data
Freescale Semiconductor
f = 1880 MHz
Zo = 50 Ω
f = 1880 MHz
Zsource
Zload
f = 2040 MHz
VDD = 28 Vdc, IDQ1 = 200 mA, IDQ2 = 440 mA, Pout = 4.5 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1880
69.33 + j26.65
3.65 -- j5.717
1900
65.20 + j19.39
3.55 -- j5.95
1920
61.07 + j12.13
3.45 -- j6.18
1940
56.93 + j4.87
3.35 -- j6.42
1960
52.80 -- j2.39
3.25 -- j6.65
1980
48.67 -- j9.65
3.15 -- j6.88
2000
44.53 -- j16.91
3.05 -- j7.12
2020
40.40 -- j24.17
2.95 -- j7.35
2040
36.27 -- j31.43
2.85 -- j7.583
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f = 2040 MHz
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 20. Series Equivalent Source and Load Impedance
MW6IC1940GNBR1
RF Device Data
Freescale Semiconductor
9
Table 7. Common Source Scattering Parameters (VDD = 28 V, IDQ1 = 200 mA, IDQ2 = 440 mA, TC = 25°C, 50 ohm system)
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
1.00
0.196
--167
0.014
--146
0.001
67
0.994
172
1.05
0.331
--176
0.026
--164
0.001
79
0.991
172
1.10
0.419
170
0.041
178
0.001
67
0.990
171
1.15
0.461
157
0.057
160
0.001
66
0.990
170
1.20
0.474
145
0.068
147
0.001
55
0.990
169
1.25
0.467
134
0.084
144
0.001
56
0.989
168
1.30
0.446
122
0.116
143
0.001
56
0.987
167
1.35
0.411
109
0.171
138
0.001
59
0.987
166
1.40
0.365
94
0.256
131
0.001
39
0.986
165
1.45
0.312
78
0.384
122
0.001
45
0.984
164
1.50
0.255
56
0.580
111
0.001
78
0.982
163
1.55
0.205
29
0.879
98
0.001
116
0.980
161
1.60
0.173
--6
1.345
85
0.001
101
0.977
159
1.65
0.172
--45
2.121
70
0.001
130
0.973
157
1.70
0.191
--80
3.478
53
0.001
125
0.968
153
1.75
0.217
--110
6.197
33
0.002
141
0.958
147
1.80
0.236
--144
13.515
5
0.003
157
0.920
130
1.85
0.154
136
39.126
--69
0.009
129
0.453
23
1.90
0.090
--117
20.507
--160
0.006
66
0.816
--159
1.95
0.081
--143
12.215
170
0.005
54
0.881
--178
2.00
0.026
--151
9.054
147
0.003
47
0.892
175
2.05
0.049
--31
7.340
126
0.003
48
0.894
172
2.10
0.119
--31
6.199
105
0.002
41
0.895
170
2.15
0.198
--42
5.298
85
0.002
57
0.895
169
2.20
0.270
--52
4.537
66
0.002
60
0.896
168
2.25
0.334
--61
3.875
47
0.002
66
0.899
167
2.30
0.391
--70
3.282
29
0.002
68
0.905
167
2.35
0.441
--78
2.771
13
0.002
75
0.913
166
2.40
0.485
--85
2.330
--3
0.002
74
0.921
166
2.45
0.523
--92
1.965
--17
0.002
73
0.930
165
2.50
0.557
--97
1.661
--31
0.002
67
0.937
165
2.55
0.587
--103
1.413
--43
0.002
73
0.944
164
2.60
0.617
--109
1.213
--55
0.003
76
0.950
163
2.65
0.643
--114
1.044
--66
0.002
76
0.955
162
2.70
0.665
--119
0.905
--77
0.003
78
0.959
162
2.75
0.687
--124
0.789
--88
0.003
75
0.961
161
2.80
0.706
--129
0.693
--99
0.003
74
0.963
160
2.85
0.723
--134
0.610
--109
0.003
74
0.966
160
2.90
0.737
--139
0.538
--120
0.003
78
0.967
159
2.95
0.751
--143
0.475
--130
0.003
79
0.969
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f
MHz
158
(continued)
MW6IC1940GNBR1
10
RF Device Data
Freescale Semiconductor
Table 7. Common Source Scattering Parameters (VDD = 28 V, IDQ1 = 200 mA, IDQ2 = 440 mA, TC = 25°C, 50 ohm system) (continued)
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
3.00
0.763
--147
0.418
--141
0.003
80
0.968
158
3.05
0.774
--152
0.367
--152
0.004
75
0.969
157
3.10
0.785
--156
0.319
--162
0.004
80
0.966
157
3.15
0.796
--159
0.278
--173
0.004
75
0.967
156
3.20
0.806
--163
0.239
177
0.004
77
0.965
156
3.25
0.815
--166
0.206
167
0.005
75
0.964
155
3.30
0.825
--170
0.176
157
0.005
73
0.964
155
3.35
0.833
--173
0.151
148
0.005
74
0.962
154
3.40
0.841
--176
0.128
140
0.005
71
0.961
154
3.45
0.849
--178
0.110
132
0.005
71
0.958
153
3.50
0.856
179
0.095
125
0.005
65
0.957
153
3.55
0.864
177
0.081
117
0.005
63
0.955
152
3.60
0.872
174
0.070
111
0.006
66
0.952
152
3.65
0.877
172
0.061
104
0.006
60
0.950
151
3.70
0.885
170
0.053
99
0.006
61
0.946
151
3.75
0.891
169
0.047
93
0.006
57
0.943
150
3.80
0.898
167
0.041
89
0.006
57
0.941
150
3.85
0.902
166
0.037
84
0.006
52
0.938
149
3.90
0.911
164
0.033
80
0.006
55
0.934
149
3.95
0.915
163
0.030
76
0.007
54
0.932
148
4.00
0.921
162
0.028
72
0.007
55
0.928
148
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f
MHz
MW6IC1940GNBR1
RF Device Data
Freescale Semiconductor
11
ARCHIVE INFORMATION
ARCHIVE INFORMATION
PACKAGE DIMENSIONS
MW6IC1940GNBR1
12
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
MW6IC1940GNBR1
RF Device Data
Freescale Semiconductor
13
ARCHIVE INFORMATION
ARCHIVE INFORMATION
MW6IC1940GNBR1
14
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
Revision
Date
Description
0
Nov. 2006
• Initial Release of Data Sheet
1
Jan. 2007
• Updated verbiage on Typical Performances table, p. 2
• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Added new Figure 13, Pulsed CW Output Power versus Input Power, p. 6
• Added new Figure 18, Power Gain versus Frequency, p. 7
• Replaced Figure 19, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Updated Product Documentation adding AN1907 and AN3263, p. 17
2
Dec. 2008
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Changed 220°C to 225°C in Capable Plastic Package bullet, p. 1
• Added Footnote 1 to Quiescent Current Temperature bullet under Features section and to callout in Fig. 1,
Functional Block Diagram, p. 1
• Changed Storage Temperature Range in Max Ratings table from --65 to +200 to --65 to +150 for
standardization across products, p. 2
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 2
• Updated verbiage on Typical Performances table, p. 3
• Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
• Adjusted scale for Fig. 11, Intermodulation Distortion Products versus Output Power, to show wider
dynamic range, p. 7
• Added new Figure 13, Pulsed CW Output Power versus Input Power, p. 7
• Added new Figure 18, Power Gain versus Frequency, p. 8
• Replaced Figure 19, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 8
ARCHIVE INFORMATION
ARCHIVE INFORMATION
The following table summarizes revisions to this document.
• Replaced Case Outline 1329--09, Issue L, with 1329--09, Issue M, p. 12--14. Added pin numbers 1
through 17.
• Replaced Case Outline 1329A--03 with 1329A--04, Issue F, p. 1, 15--17. Added pin numbers 1 through 17.
Corrected mm dimension L for gull--wing foot from 4.90--5.06 Min--Max to 0.46--0.61 Min--Max. Corrected
L1 mm dimension from .025 BSC to 0.25 BSC. Added JEDEC Standard Package Number.
• Data sheet archived. Part no longer manufactured.
• Updated Product Documentation adding AN1907 and AN3263, p. 18
(continued)
MW6IC1940GNBR1
RF Device Data
Freescale Semiconductor
15
REVISION HISTORY (continued)
Revision
Date
3
Mar. 2009
Description
• Data sheet revised to reflect part status change, p. 1, 4--5, including use of applicable overlay.
• Updated Product Documentation removing AN1907 and AN3263, p. 15
3.1
Dec. 2009
• Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process Change
Notification number, PCN13232, p. 1, 2
ARCHIVE INFORMATION
ARCHIVE INFORMATION
• Rev. 3.1 (MW6IC1940GNBR1) data sheet archived. Part no longer manufactured. See Rev. 4.1 for
MW6IC1940NBR1.
MW6IC1940GNBR1
16
RF Device Data
Freescale Semiconductor
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MW6IC1940GNBR1
Document
Number:
RF
Device
Data MW6IC1940N--1
Rev. 3.1, 12/2009
Freescale
Semiconductor
17