LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN MMBT3904WT1 PNP MMBT3906WT1 NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 Symbol Value Unit V CEO 40 – 40 60 – 40 6.0 – 5.0 200 Vdc V CBO V EBO IC MMBT3906WT1 GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT Vdc Vdc 3 mAdc 1 – 200 2 CASE 419–02, STYLE 3 SOT– 323 / SC–70 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (1) T A =25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 150 mW R θJA T J , T stg 833 –55 to +150 °C/W °C DEVICE MARKING MMBT3904WT1 = AM; MMBT3906WT1 = 2A ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit 40 – 40 — — Vdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (2) (I C = 1.0 mAdc, I B = 0) (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 10 µAdc, I E = 0) (I C = –10 µAdc, I E = 0) Emitter–Base Breakdown Voltage MMBT3904WT1 MMBT3906WT1 V MMBT3904WT1 MMBT3906WT1 V(BR)CBO 60 – 40 — — Vdc (IE= 10 µAdc, I C = 0) MMBT3904WT1 V(BR)EBO 6.0 — Vdc (BR)CEO (I E = –10 µAdc, I C = 0) MMBT3906WT1 – 5.0 — Base Cutoff Current (V CE = 30 Vdc, V EB = 3.0 Vdc) MMBT3904WT1 I BL — 50 (V CE = –30 Vdc, V EB = –3.0 Vdc) MMBT3906WT1 — -50 Collector Cutoff Current (V CE = 30 Vdc, V EB = 3.0 Vdc) MMBT3904WT1 I CEX — 50 (V CE = –30 Vdc, V EB = –3.0 Vdc) MMBT3906WT1 — – 50 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. nAdc nAdc K3–1/9 LESHAN RADIO COMPANY, LTD. NPN MMBT3904WT1 PNP MMBT3906WT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 40 70 100 60 30 60 80 100 60 30 –– –– 300 –– –– –– –– 300 –– –– –– –– –– –– 0.2 0.3 – 0.25 – 0.4 0.65 –– – 0.65 –– 0.85 0.95 – 0.85 – 0.95 Unit ON CHARACTERISTICS (2) DC Current Gain (I C = 0.1 mAdc, V CE = 1.0 Vdc) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 50 mAdc, V CE = 1.0 Vdc) (I C = 100 mAdc, V CE = 1.0 Vdc) (I C = –0.1 mAdc, V CE = –1.0 Vdc) (I C = –1.0 mAdc, V CE = –1.0 Vdc) (I C = –10 mAdc, V CE = –1.0 Vdc) (I C = –50 mAdc, V CE = –1.0 Vdc) (I C = –100 mAdc, V CE = –1.0 Vdc) Collector–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50 mAdc, I B = 5.0 mAdc) (I C = –10 mAdc, I B = –1.0 mAdc) (I C = –50 mAdc, I B = –5.0 mAdc) Base–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50 mAdc, I B = 5.0 mAdc) (I C = –10 mAdc, I B = –1.0 mAdc) (I C = –50 mAdc, I B = –5.0 mAdc) h FE –– MMBT3904WT1 MMBT3906WT1 VCE(sat) Vdc MMBT3904WT1 MMBT3906WT1 V BE(sat) Vdc MMBT3904WT1 MMBT3906WT1 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 10 mAdc, V CE = 20 Vdc, f = 100 MHz) (I C = –10 mAdc, V CE= –20 Vdc, f = 100 MHz) Output Capacitance (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) (V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) (V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Noise Figure (V CE= 5.0Vdc, I C = 100µAdc, R S=1.0 kΩ, f =1.0kHz) (V CE= –5.0Vdc, I C = –100 µAdc, R S=1.0 kΩ, f =1.0kHz) fT MMBT3904WT1 MMBT3906WT1 MHz 300 250 –– –– –– –– 4.0 4.5 –– –– 8.0 10.0 1.0 2.0 10 12 C obo MMBT3904WT1 MMBT3906WT1 pF C ibo MMBT3904WT1 MMBT3906WT1 pF h ie MMBT3904WT1 MMBT3906WT1 kΩ h re MMBT3904WT1 MMBT3906WT1 X 10 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 –– –– 5.0 4.0 h fe MMBT3904WT1 MMBT3906WT1 — µmhos h oe MMBT3904WT1 MMBT3906WT1 NF MMBT3904WT1 MMBT3906WT1 –4 dB K3–2/9 LESHAN RADIO COMPANY, LTD. NPN MMBT3904WT1 PNP MMBT3906WT1 SWITCHING CHARACTERISTICS Delay Time (V CC = 3.0 Vdc, V BE = –0.5 Vdc) (V CC = –3.0 Vdc, V BE = 0.5 Vdc) Rise Time (I C = 10 mAdc, I B1 = 1.0 mAdc) (I C = –10 mAdc, I B1 = –1.0 mAdc) Storage Time (V CC = 3.0 Vdc, I C = 10 mAdc) (V CC = –3.0 Vdc, I C = –10 mAdc) Fall Time (I B1 = I B2 = 1.0 mAdc) (I B1 = I B2 = –1.0 mAdc) MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 td — — — — — — — — tr ts tf 35 35 35 35 200 225 50 75 ns ns ns ns 2. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. MMBT3904WT1 +3 V 300 ns DUTY CYCLE = 2% +10.9 V 275 10 < t 1 < 500 µs DUTY CYCLE = 2% t +3 V 1 +10.9 V 275 10 k 10 k – 0.5 V 0 C S < 4.0 pF* <1 ns C S < 4.0 pF* 1N916 – 9.1 V <1.0 ns *Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS T J = 25°C T J = 125°C 5000 10 MMBT3904WT1 V CC = 40 V I C / I B = 10 3000 7.0 2000 MMBT3904WT1 Q, CHARGE (pC) CAPACITANCE (pF) 5.0 C ibo 3.0 C obo 2.0 1000 700 500 QT 300 200 QA 100 70 50 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 200 K3–3/9 LESHAN RADIO COMPANY, LTD. NPN MMBT3904WT1 PNP MMBT3906WT1 MMBT3904WT1 500 500 I C /I B = 10 100 70 t r @V CC=3.0V 50 30 40 V 20 100 70 50 30 20 15 V 10 10 MMBT3904WT1 7 2.0 V t d@V OB=0V 5 1.0 2.0 3.0 5.0 7.0 10 20 30 MMBT3904WT1 7 5 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time 200 500 500 t’s= ts –1/8t f 300 200 I C /I B = 10 I C /I B = 20 V CC=40V I B1 = I B2 300 200 IB1 = IB2 I C /I B = 20 100 100 t f , FALL TIME (ns) t ’ s, STORAGE TIME (ns) V CC = 40 V I C /I B = 10 300 200 t r , RISE TIME (ns) TIME (ns) 300 200 70 I C /I B = 20 50 I C /I B = 10 30 20 10 MMBT3904WT1 7 70 50 I C /I B = 10 30 20 10 MMBT3904WT1 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 200 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 200 TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE = 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz) 12 14 SOURCE RESISTANCE= 200Ω I C = 1.0 mA SOURCE RESISTANCE= 200 Ω I C = 0.5 mA 8 6 SOURCE RESISTANCE =1.0kΩ I C = 50 µA 4 2 0 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 SOURCE RESISTANCE= 500Ω I C = 100 µA 0.1 0.2 0.4 1.0 2.0 4.0 MMBT3904WT1 I C = 1.0 mA I C = 0.5 mA 10 I C = 50 µA 8 I C = 100 µA 6 4 2 MMBT3904WT1 0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) R S , SOURCE RESISTANCE (kΩ) Figure 9. Noise Figure Figure 10. Noise Figure 40 100 K3–4/9 LESHAN RADIO COMPANY, LTD. NPN MMBT3904WT1 PNP MMBT3906WT1 h PARAMETERS (V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C) 300 MMBT3904WT1 100 70 50 30 h ie, INPUT IMPEDANCE (k OHMS) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 10 5 2 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C , COLLECTOR CURRENT (mA) Figure 11. Current Gain Figure 12. Output Admittance 20 10 MMBT3904WT1 5.0 2.0 1.0 0.5 0.2 0.1 MMBT3904WT1 50 I C , COLLECTOR CURRENT (mA) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) h fe, CURRENT GAIN 200 h oe , OUTPUT ADMITTANCE ( µmhos) 100 5.0 10 5.0 10 10 7.0 MMBT3904WT1 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio K3–5/9 LESHAN RADIO COMPANY, LTD. NPN MMBT3904WT1 PNP MMBT3906WT1 h FE , DC CURRENT GAIN (NORMALIZED) MMBT3904WT1 TYPICAL STATIC CHARACTERISTICS 20 T J = +125°C V CE = 1.0 V MMBT3904WT1 +25°C 10 0.7 –55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 15. DC Current Gain 1.0 T J = 25°C MMBT3904WT1 0.8 I C = 1.0 mA 30 mA 10 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B , BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 1.2 T J = 25°C V BE(sat) @ I C /I B =10 0.5 COEFFICIENT (mV/ °C) V, VOLTAGE ( VOLTS ) MMBT3904WT1 MMBT3904WT1 1.0 0.8 V BE @ V CE =1.0 V 0.6 0.4 V CE(sat) @ I C /I B =10 0.2 0 +25°C TO +125°C θ VC for V CE 0 –55°C TO +25°C – 0.5 –55°C TO +25°C –1.0 +25°C TO +125°C θ VB for V BE –1.5 –2.0 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients 200 K3–6/9 LESHAN RADIO COMPANY, LTD. NPN MMBT3904WT1 PNP MMBT3906WT1 MMBT3906WT1 3V +9.1 V 3V < 1 ns 275 < 1 ns 275 10 k 10 k 0 C S < 4 pF* +10.6 V 300 ns DUTY CYCLE = 2% C S < 4 pF* 1N916 10 < t 1 < 500 µs DUTY CYCLE = 2% 10.9 V t1 * Total shunt capacitance of test jig and connectors Figure 19. Delay and Rise Time Figure 20. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS T J = 25°C T J = 125°C 10.0 5000 MMBT3906WT1 7.0 Q, CHARGE (pC) CAPACITANCE (pF) 2000 C obo 5.0 C ibo 3.0 2.0 MMBT3906WT1 V CC = 40 V I C /I B = 10 3000 QT 1000 700 500 300 200 QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 20 30 50 70 100 Figure 21. Capacitance Figure 22. Charge Data 500 I C /I B = 10 100 70 t r @ V CC = 3.0 V 50 15 V 30 20 40 V 2.0 V 10 7 2.0 3.0 5.0 7.0 10 20 30 200 V CC = 40 V I B1 = I B2 I C /I B = 20 100 70 50 I C /I B = 10 30 20 10 7 t d @ V OB = 0 V 5 MMBT3906WT1 300 200 t f , FALL TIME (ns) MMBT3906WT1 300 200 1.0 5.0 7.0 10 I C , COLLECTOR CURRENT (mA) 500 TIME (ns) 2.0 3.0 REVERSE BIAS VOLTAGE (VOLTS) 5 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 23. Turn–On Time Figure 24. Fall Time 200 K3–7/9 LESHAN RADIO COMPANY, LTD. NPN MMBT3904WT1 PNP MMBT3906WT1 MMBT3906WT1 TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE = –5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz) SOURCE RESISTANCE= 200Ω I C = 1.0 mA 4.0 14 SOURCE RESISTANCE= 200 Ω I C = 0.5 mA 3.0 SOURCE RESISTANCE =2.0kΩ I C = 50 µA 2.0 SOURCE RESISTANCE= 2.0kΩ I C = 100 µA 1.0 I C = 1.0 mA f = 1.0 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 MMBT3906WT1 I C = 0.5 mA 10 8 6 I C = 50 µA 4 I C = 100 µA 2 MMBT3906WT1 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0 100 0.1 0.2 0.4 f, FREQUENCY (kHz) 1.0 2.0 4.0 10 20 40 100 R S , SOURCE RESISTANCE (kΩ) Figure 25 Figure 26 h PARAMETERS (V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C) h oe , OUTPUT ADMITTANCE ( µmhos) 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 h ie, INPUT IMPEDANCE (kΩ) MMBT3906WT1 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 27. Current Gain Figure 28. Output Admittance 20 MMBT3906WT1 10 5.0 2.0 1.0 0.5 0.2 0.1 70 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) h fe, CURRENT GAIN MMBT3906WT1 100 7.0 10 10 MMBT3906WT1 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 29. Input Impedance Figure 30. Voltage Feedback Ratio K3–8/9 LESHAN RADIO COMPANY, LTD. NPN MMBT3904WT1 PNP MMBT3906WT1 MMBT3906WT1 h FE , DC CURRENT GAIN (NORMALIZED) STATIC CHARACTERISTICS 20 T J = +125°C V CE = 1.0 V +25°C 10 0.7 –55°C 0.5 0.3 MMBT3906WT1 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 31. DC Current Gain 1.0 T J = 25°C MMBT3906WT1 0.8 I C=1.0 mA 30 mA 10 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B , BASE CURRENT (mA) 1.2 V BE(sat) @ I C /I B =10 T J = 25°C V, VOLTAGE ( VOLTS ) 1.0 V BE @ V CE =1.0 V 0.8 0.6 0.4 V CE(sat) @ I C /I B =10 0 1.0 2.0 5.0 1.0 0.5 10 20 50 C , COLLECTOR CURRENT (mA) Figure 33. “ON” Voltages 100 200 θ VC for V CE(sat) +25°C TO +125°C –55°C TO +25°C 0 – 0.5 MMBT3906WT1 0.2 θ V, TEMPERATURE COEFFICIENT (mV/ °C) Figure 32. Collector Saturation Region MMBT3906WT1 +25°C TO +125°C –1.0 θ VB for V BE(sat) –55°C TO +25°C –1.5 –2.0 0 20 40 60 80 100 120 140 160 180 200 I C , COLLECTOR CURRENT (mA) Figure 34. Temperature Coefficients K3–9/9