TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices 2N3762 2N3762L Qualified Level 2N3763 2N3763L 2N3764 JAN JANTX JANTXV 2N3765 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 2N3762* 2N3764 2N3763* 2N3765 40 40 60 60 VCEO VCBO VEBO IC Total Power Dissipation @ TA = +250C Operating & Storage Junction Temp. Range THERMAL CHARACTERISTICS Characteristics 5.0 1.5 2N3762* 1 2N3763* 2N3764 2 2N3765 1.0 0.5 PT Symbol TO-39* (TO-205AD) 2N3762, 2N3763 W C Max. 2N3762* 2N3763* Vdc Vdc Vdc Adc 0 -55 to +200 Top, Tstg Unit TO-5* 2N3762L, 2N3763L Unit 2N3764 2N3765 0 Thermal Resistance Junction-to-Case 60 88 C/W RθJC *Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices 1) Derate linearly at 5.71 mW/0C for TA > +250C 2) Derate linearly at 2.86 mW/0C for TA > +250C TO-46* (TO-206AB) 2N3764, 2N3765 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)CEO 40 60 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 20 Vdc VCB = 30 Vdc VCB = 40 Vdc VCB = 60 Vdc 2N3762, 2N3764 2N3763, 2N3765 2N3762, 2N3764 2N3763, 2N3765 2N3762, 2N3764 2N3763, 2N3765 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 ICBO Vdc 100 100 10 10 ηAdc µAdc 120101 Page 1 of 2 2N3762, L, 2N3763, L, 2N3764, 2N3765 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Collector-Emitter Cutoff Current VEB = 2.0 Vdc, VCE = 20 Vdc VEB = 2.0 Vdc, VCE = 30 Vdc Emitter-Base Cutoff Current VEB = 2.0 Vdc VEB = 5.0 Vdc Symbol 2N3762, 2N3764 2N3763, 2N3765 All Types 2N3762, 2N3764 2N3763, 2N3765 Min. Max. Unit ICEX 100 100 ηAdc IEBO 200 10 10 ηAdc µAdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 10 mAdc, VCE = 1.0 Vdc IC = 150 mAdc, VCE = 1.0 Vdc IC = 500 mAdc, VCE = 1.0 Vdc IC = 1.0 Adc, VCE = 1.5 Vdc IC = 1.5 Adc, VCE = 5.0 Vdc 2N3762, 2N3764 2N3763, 2N3765 2N3762, 2N3764 2N3763, 2N3765 Collector-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 150 m Adc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 150 m Adc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc hFE 35 40 40 30 20 30 20 140 120 80 0.1 0.22 0.5 0.9 Vdc Vdc 0.9 0.8 1.0 1.2 1.4 1.8 1.5 6.0 6.0 VCE(sat) VBE(sat) DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz 2N3762, 2N3764 2N3763, 2N3765 Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe Cobo 25 pF Cibo 80 pF 8.0 35 80 35 ηs ηs ηs ηs SWITCHING CHARACTERISTICS Delay Time VCC = 30 Vdc, VEB = 0, Rise Time IC = 1.0 mAdc, IB1 = 100 mAdc Storage Time VCC = 30 Vdc, VEB = 0, Fall Time IC = 1.0 mAdc, IB1 = 100 mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 t d r t s t f t 120101 Page 2 of 2