MORE MSN0650D 60v(d-s) n-channel enhancement mode power mos fet Datasheet

MSN0650D
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =60V,ID =50A
RDS(ON) <20mΩ @ VGS=10V
● High density cell design for ultra low Rdson
Lead Free
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
●
Power switching application
●
Hard switched and high frequency circuits
●
Uninterruptible Power Supply
Marking and pin assignment
PIN Configuration
Schematic diagram
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
MSN0650D
MSN0650D
TO-252-2L
-
-
Quantity
2500PCS
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
50
A
ID (100℃)
35
A
Pulsed Drain Current
IDM
220
A
Maximum Power Dissipation
PD
80
W
0.53
W/℃
EAS
115
mJ
TJ,TSTG
-55 To 175
℃
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
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MSN0650D
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
℃/W
1.88
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
60
70
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.5
2.0
2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
-
17
20
mΩ
gFS
VDS=25V,ID=20A
24
-
-
S
-
900
-
PF
-
104
-
PF
Crss
-
33
-
PF
Turn-on Delay Time
td(on)
-
25
-
nS
Turn-on Rise Time
tr
VDD=30V,ID=2A,RL=15Ω
-
5
-
nS
td(off)
VGS=10V,RG=2.5Ω
-
50
-
nS
-
6
-
nS
-
30
nC
-
10
nC
-
5
nC
Off Characteristics
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=25V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=30V,ID=50A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
Diode Forward Current
(Note 2)
IS
VGS=0V,IS=40A
-
1.2
V
-
-
50
A
trr
TJ = 25°C, IF = 40A
-
50
-
nS
Reverse Recovery Charge
Qrr
di/dt = 100A/μs(Note3)
-
100
-
nC
Forward Turn-On Time
ton
Reverse Recovery Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω
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MSN0650D
Test Circuit
1) EAS Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
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MSN0650D
ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-Junction Temperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
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Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
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C Capacitance (pF)
MSN0650D
TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BVDSS vs Junction Temperature
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 VGS(th) vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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MSN0650D
TO-252 Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
2.200
2.400
0.087
0.094
A1
0.000
0.127
0.000
0.005
b
0.660
0.860
0.026
0.034
c
0.460
0.580
0.018
0.023
D
6.500
6.700
0.256
0.264
D1
5.100
5.460
0.201
0.215
D2
0.483 TYP.
0.190 TYP.
E
6.000
6.200
0.236
0.244
e
2.186
2.386
0.086
0.094
L
9.800
10.400
0.386
0.409
L1
L2
2.900 TYP.
1.400
L3
0.114 TYP.
1.700
0.055
1.600 TYP.
0.067
0.063 TYP.
L4
0.600
1.000
0.024
0.039
Φ
1.100
1.300
0.043
0.051
θ
0°
8°
0°
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
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0.211 TYP.
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