SBD T y p e : C10T04 C10T04QHQH-11A OUTLINE DRAWING FEATURES *Tabless TO-220 *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.45g Symbol C10T04QH-11A Unit Repetitive Peak Reverse Voltage Repetitive Peak Surge Reverse Voltage VRRM VRRSM V V Average Rectified Output Current IO 40 45(pulse width ≤ 1µs duty ≤ 1/50) 50 Hz Full Sine Wave 10 Tc=128°C Resistive Load 11.1 50Hz Full Sine Wave ,1cycle 120 Non-repetitive -40 to +150 -40 to +150 RMS Forward Current IF(RMS) Surge Forward Current IFSM Operating JunctionTemperature Range Storage Temperature Range Tjw Tstg A A A °C °C Electrical • Thermal Characteristics Characteristics Symbol Peak Reverse Current IRM Peak Forward Voltage VFM Thermal Resistance Conditions Tj= 25°C, VRM= VRRM per arm Tj= 25°C, IFM= 5 A per arm Rth(j-c) Junction to Case Min. Typ. Max. Unit - - 1 mA - - 0.61 V - - 3 °C /W C_T_ 11A OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE C10T04QH/C10T04QH-11A (per Arm) INSTANTANEOUS FORWARD CURRENT (A) 20 10 5 2 Tj=25°C Tj=150°C 1 0.5 0 0.2 0.4 0.6 0.8 1.0 INSTANTANEOUS FORWARD VOLTAGE (V) 0° θ 180° AVERAGE FORWARD POWER DISSIPATION CONDUCTION ANGLE C10T04QH/C10T04QH-11A (Total) AVERAGE FORWARD POWER DISSIPATION (W) 8 RECT 180° 7 SINE WAVE 6 5 4 3 2 1 0 0 2 4 6 8 AVERAGE FORWARD CURRENT (A) 10 12 PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 °C C10T04QH/C10T04QH-11A (per Arm) PEAK REVERSE CURRENT (mA) 50 20 10 5 0 10 20 30 40 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION C10T04QH/C10T04QH-11A (Total) AVERAGE REVERSE POWER DISSIPATION (W) 1.4 RECT 180° 1.2 1.0 0.8 SINE WAVE 0.6 0.4 0.2 0 0 10 20 REVERSE VOLTAGE (V) 30 40 0° θ 180° AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE CONDUCTION ANGLE V RM =40 V C10T04QH/C10T04QH-11A (Total) 12 AVERAGE FORWARD CURRENT (A) RECT 180° SINE WAVE 10 8 6 4 2 0 0 25 50 75 100 125 150 CASE TEMPERATURE (°C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load C10T04QH/C10T04QH-11A 140 SURGE FORWARD CURRENT (A) 120 100 80 60 40 I FSM 20 0.02s 0 0.02 0.05 0.1 0.2 TIME (s) 0.5 1 2 JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5° C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C10T04QH/C10T04QH-11A (per Arm) JUNCTION CAPACITANCE (pF) 1000 500 200 100 0.5 1 2 5 REVERSE VOLTAGE (V) 10 20 50