www.fairchildsemi.com FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Fairchild Power Switch(SPS) Features • • • • • • • • • • • • • • • TO-3P-5L Wide Operating Frequency Range Up to 150Khz Lowest Cost SMPS Solution Lowest External Components Low Start-up Current (max:170uA) Low Operating Current (max:15mA) Internal High Voltage SenseFET Built-in Auto-Restart Circuit Over Voltage Protection (Auto Restart Mode) Over Load Protection (Auto Restart Mode) Over Current Protection With Latch Mode Internal Thermal Protection With Latch Mode Pulse By Pulse Over Current Limiting Internal Burst Mode Controller for Stand-by Mode Under Voltage Lockout With Hysteresis External Sync. Terminal 1 TO-220F-5L 1 1. Drain 2. Gnd 3. VCC 4. FeedBack 5. Sync. Internal Block Diagram 3 1 Vpp=5.8/7.2V + 5 Internal Bias OSC SYNC + Vref UVLO VREF Burst Mode Coltroller VFB - Vth=1V + S VCC - R Vth=11/12V _ QB Ron + Roff - 4 PWM 2.5R Ifb Idelay VREF + R VCC Vfb Offset Rsense + - OCL OLP Vth=7.5V VCC + - S OVP Vth=30V Uvlo Reset (VCC=9V) R Q Q S R Filter (130nsec) + - Vth=1V 2 TSD Power-on Reset (Tj=160℃) (VCC=6.5V) Rev.1.0.1 ©2001 Fairchild Semiconductor Corporation FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit FS6S0965RT/FS6S0965R Drain to PKG Breakdown Voltage BVPKG Maximum Drain Voltage VD,MAX 650 V VDGR 650 V Gate-Source(GND) Voltage VGS ±30 V Drain Current Pulsed(1) IDM 36 ADC Continuous Drain Current (Tc = 25°C) ID 9 ADC Continuous Drain Current (Tc = 100°C) ID 7.2 ADC IAS(EAS) 25(950) A(mJ) VCC,MAX 35 V VFB -0.3 to VCC V VSS -0.3 to 10 V Drain-Gate Voltage(RGS=1MΩ) Single Pulsed Avalanch Current(Energy (2)) Maximum Supply Voltage Input Voltage Range PD (Watt H/S) Total Power Dissipation Derating FS6S0965RT 3500 FS6S0965RT 48 FS6S0965R 170 FS6S0965RT 0.385 FS6S0965R 1.33 V W W / °C Operating Junction Temperature. TJ +160 °C Operating Ambient Temperature. TA -25 to +85 °C TSTG -55 to +150 °C VD,MAX 650 V VDGR 650 V VGS ±30 V IDM 48 ADC ID 12 ADC ID 8.4 ADC IAS(EAS) 30(950) A(mJ) VCC,MAX 35 V Storage Temperature Range. FS6S1265R Maximum Drain Voltage Drain-Gate Voltage(RGS=1MΩ) Gate-Source(GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) Single Pulsed Avalanch Current(Energy Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. 2 (2) ) VFB -0.3 to VCC V VSS -0.3 to 10 V PD (Watt H/S) 240 W Derating 1.92 W / °C TJ +160 °C TA -25 to +85 °C TSTG -55 to +150 °C FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Absolute Maximum Ratings (Continued) (Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit VD,MAX 650 V VDGR 650 V VGS ±30 V IDM 60 ADC ID 15 ADC ID 12.0 ADC IAS(EAS) 37(--) A(mJ) VCC,MAX 35 V FS6S15658R Maximum Drain Voltage Drain-Gate Voltage(RGS=1MΩ) Gate-Source(GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) Single Pulsed Avalanch Current(Energy Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. (2) ) VFB -0.3 to VCC V VSS -0.3 to 10 V PD (Watt H/S) 280 W Derating 2.22 W / °C TJ +160 °C TA -25 to +85 °C TSTG -55 to +150 °C Notes : 1. Repetitive rating : Pulse width limited by maximum junction temperature 2. L = 10mH, VDD =50V, RG = 27Ω, starting Tj = 25°C 3. L = 13uH, starting Tj = 25°C 3 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Electrical Characteristics (SFET Part) (Ta = 25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit 650 - - V VDS=Max., Rating, VGS=0V - - 200 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 300 µA FS6S0965RT/FS6S0965R Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS VGS=0V, ID=50µA Static Drain-Source On Resistance (1) RDS(on) VGS=10V, ID=4.5A - 1.1 1.2 Ω transconductance(1) gfs VDS=50V, ID=4.5A - - - S - 1300 - - 135 - - 25 - - 25 - - 75 - - 130 - - 70 - - 45 - - 8 - - 22 - Forward Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn on delay time td(on) Rise time tr Turn off delay time td(off) Fall time tf Total gate charge (gate-source+gate-drain) Qg Gate-source charge Qgs Gate-drain (Miller) charge Qgd VGS=0V, VDS=25V, f = 1MHz VDD=0.5BVDSS, ID=9.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=9.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) pF nS nC FS6S1265R Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source On Resistance (1) (1) Forward transconductance 650 - - V VDS=Max., Rating, VGS=0V - - 200 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 300 µA RDS(on) VGS=10V, ID=4.5A - 0.7 0.9 Ω gfs VDS=50V, ID=4.5A - - - S - 1820 - - 185 - - 32 - - 38 - - 120 - - 200 - - 100 - - 60 - - 10 - - 30 - IDSS Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn on delay time td(on) Rise time Turn off delay time Fall time 4 BVDSS tr td(off) tf Total gate charge (gate-source+gate-drain) Qg Gate-source charge Qgs Gate-drain (Miller) charge Qgd VGS=0V, ID=50µA VGS=0V, VDS=25V, f = 1MHz VDD=0.5BVDSS, ID=12.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=12.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) pF nS nC FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Electrical Characteristics (SFET Part; Continued) (Ta = 25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit 650 - - V VDS=Max., Rating, VGS=0V - - 200 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 300 µA FS6S15658R Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS VGS=0V, ID=50µA Static Drain-Source On Resistance (1) RDS(on) VGS=10V, ID=4.5A - 0.5 0.65 Ω transconductance(1) gfs VDS=50V, ID=4.5A - - - S - 2590 - - 270 - - 50 - - 50 - - 155 - - 270 - - 125 - - 90 - - 15 - - 45 - Forward Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn on delay time td(on) Rise time Turn off delay time Fall time tr td(off) tf Total gate charge (gate-source+gate-drain) Qg Gate-source charge Qgs Gate-drain (Miller) charge Qgd VGS=0V, VDS=25V, f = 1MHz VDD=0.5BVDSS, ID=15.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=15.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) pF nS nC Note: (1) Pulse Test : Pulse width ≤300uS, Duty Cycle ≤ 2 % 1(2) S = --R 5 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Electrical Characteristics (CONTROL Part) (VCC=16V, Tamb = 25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage VSTART VFB=GND 14 15 16 V Stop Threshold Voltage VSTOP VFB=GND 8 9 10 V 22 25 28 kHz OSCILLATOR SECTION - Initial Frequency FOSC Voltage Stability FSTABLE 12V ≤ VCC ≤ 23V 0 1 3 % Temperature Stability (Note2) ∆FOSC -25°C ≤ Τa≤ 85°C 0 ±5 ±10 % Maximum Duty Cycle DMAX - 92 95 98 % Minimum Duty Cycle DMIN - - - 0 % FEEDBACK SECTION Feedback Source Current IFB VFB=GND 0.7 0.9 1.1 mA Shutdown Feedback Voltage VSD VFB ≥ 6.9V 6.9 7.5 8.1 V IDELAY VFB=5V 1.6 2.0 2.4 µA Softstart Voltage VSS VFB=2V 4.7 5.0 5.3 V Softstart Current ISS VSS=0V 0.8 1.0 1.2 mA Shutdown Delay Current SYNC. & SOFTSTART SECTION Sync High Threshold Voltage(Note3) VSYNCH VCC=16V , VFB=5V - 7.2 - V Sync Low Threshold Voltage(Note3) VSYNCL VCC=16V , VFB=5V - 5.8 - V Burst Mode Low Threshold Voltage VBURL VFB=0V 10.4 11.0 11.6 V Burst Mode High Threshold Voltage VBURH VFB=0V 11.4 12.0 12.6 V VCC=10.5V 0.7 1.0 1.3 V BURST MODE SECTION Burst Mode Enable Feedback Voltage VBEN Burst Mode Peak Current Limit(Note4) IBURPK VCC=10.5V , VFB=0V 0.6 0.85 1.1 A FBUR VCC=10.5V , VFB=0V 40 50 60 kHz FS6S0965R 5.28 6.0 6.72 FS6S1265R 7.04 8.0 8.96 FS6S15658R 7.04 8.0 8.96 Burst Mode Freqency CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit (Note4) IOVER A PROTECTION SECTION VCC ≥ 27V Over Voltage Protcetion VOVP 27 30 33 V Over Current Latch voltage(Note3) VOCL - 0.9 1.0 1.1 V Thermal Shutdown Tempature(Note2) TSD - 140 160 - °C - 0.1 0.17 mA - 10 15 mA TOTAL DEVICE SECTION Start Up Current Operating Supply Current(Note1) ISTART VFB=GND, VCC=14V IOP VFB=GND, VCC=16V IOP(MIN) VFB=GND, VCC=12V IOP(MAX) VFB=GND, VCC=30V Note: 1. These parameters is the Current Flowing in the Control IC. 2. These parameters, although guaranteed, are not 100% tested in production 3. These parameters, although guaranteed, are tested in EDS(wafer test) process 4. These parameters are indicated Inductor Current. 6 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Typical Performance Characteristics [mA] 0.15 Istart [mA] 10.2 Iop 10.0 0.12 9.8 0.09 9.6 0.06 9.4 0.03 9.2 9.0 0.00 -25 0 25 50 75 100 125 -25 150 0 25 50 Figure 1. Start Up Current vs. Temp. [V] 16.0 75 100 125 150 Temp Temp Figure 2. Operating Supply Current vs. Temp. Vstart [V] 9.10 15.6 Vstop 9.06 15.2 9.02 14.8 8.98 14.4 8.94 14.0 13.6 8.90 -25 0 25 50 75 100 125 150 -25 Temp [kHz] 25 50 75 100 125 150 Temp Figure 3. Start Threshold Voltage vs. Temp. 26.0 0 Fosc Figure 4. Stop Threshold Voltage vs. Temp. [%] 96.0 25.2 95.6 24.4 95.2 23.6 94.8 22.8 94.4 22.0 Dmax 94.0 -25 0 25 50 75 100 125 Temp Figure 5. Initial Frequency vs. Temp. 150 -25 0 25 50 75 100 125 150 Temp Figure 6. Maximum Duty vs. Temp. 7 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Typical Performance Characteristics (Continued) [V] Voff 0.50 Ifb [mA] 1.05 1.00 0.95 0.40 0.90 0.30 0.85 0.20 0.80 0.10 0.75 -25 0 25 50 75 100 125 150 -25 Temp [uA] Idelay 50 75 100 125 150 Figure 8. Feedback Source Current vs. Temp. [V] 7.60 2.02 7.56 1.94 7.52 1.86 7.48 1.78 7.44 1.70 Vsd 7.40 -25 0 25 50 75 100 125 150 Temp [V] 5.10 -25 0 25 50 75 100 125 150 Temp Figure 9. Shutdown Delay Current vs. Temp. Vss Figure 10. Shutdown Feedback Voltage vs. Temp. [V] 31.0 5.06 30.6 5.02 30.2 4.98 29.8 4.94 29.4 Vovp 29.0 4.90 -25 0 25 50 75 100 125 Temp Figure 11. Softstart Voltage vs. Temp. 8 25 Temp Figure 7. Feedback Offset Voltage vs. Temp. 2.10 0 150 -25 0 25 50 75 100 125 150 Temp Figure 12. Over Voltage Protection vs. Temp. FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Typical Performance Characteristics (Continued) [V] 11.2 Vburl Vburh [V] 12.3 12.2 11.1 12.1 11.0 12.0 11.9 10.9 11.8 10.8 11.7 -25 0 25 50 75 100 125 150 Temp [kHz] 0 25 50 75 100 125 150 Temp Figure 13. Burst Mode Low Voltage vs. Temp. 53.0 -25 Fbur Figure 14. Burst Mode High Voltage vs. Temp. [V] 1.60 Vben 51.0 1.20 49.0 0.80 47.0 0.40 45.0 0.00 43.0 -25 0 25 50 75 100 125 -25 150 0 25 50 Temp Figure 15. Burst Mode Frequency vs. Temp. [A] 0.98 75 100 125 150 Figure 16. Burst Mode Enable Voltage vs. Temp. Ibur_pk 0.95 6.10 0.92 6.00 0.89 5.90 0.86 5.80 Iover [A] 6.20 5.70 0.83 -25 0 25 50 75 100 125 150 Temp Figure 17. Burst Mode Peak Current vs. Temp. 9 Temp -25 0 25 50 75 100 125 Temp Figure 18. Peak Current Limit vs. Temp. 150 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Package Dimensions TO-3P-5L 10 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Package Dimensions (Continued) TO-3P-5L (Forming) 11 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Package Dimensions (Continued) TO-220F-5L 12 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Package Dimensions (Continued) TO-220F-5L (Forming) 13 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R TOP Mark and Pinout Information F SXXYY MARKING Pin No. Symbol Description 1 Drain SenseFET Drain 2 GND Ground (Source) 3 VCC Control Part Supply Input 4 F/B PWM Non Inverting Input 5 S/S Soft start & External Sync. 1 Device FS6S0965R FS6S0965RT MARKING 6S0965R FS6S1265R 6S1265R FS6S15658R 6S15658R Notes ; (1) F ; Fairchild Semiconductor (2) 6S0965R, 6S1265R, 6S15658R ; Device Marking Name (3) S: Plant Code (SPS: S) (4) XX: Patweek Based on Fairchild Semiconductor Work Month Calender (5) YY: Last Two Digit of Calender Year 14 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Ordering Information Product Number FS6S0965R-TU FS6S0965R-YDTU FS6S0965RT-TU FS6S0965RT-YDTU FS6S1265R-TU FS6S1265R-YDTU FS6S15658R-TU FS6S15658R-YDTU TU : Non Forming Type YDTU : Forming Type 15 Package TO-3P-5L TO-3P-5L(Forming) TO-220F-5L TO-220F-5L(Forming) TO-3P-5L TO-3P-5L(Forming) TO-3P-5L TO-3P-5L(Forming) Marking Code BVdss Rds(on) 6S0965R 650V 1.1Ω 6S0965R 650V 1.1Ω 6S1265R 650V 0.7Ω 6S15658R 650V 0.5Ω FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 2/5/01 0.0m 001 2001 Fairchild Semiconductor Corporation