UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14Ω Features Description • RDS(on) = 0.12Ω ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 20nC) • Low Crss ( Typ. 24pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant D G G D S TO-220 FDP Series TO-220F FDPF Series GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDP18N20F FDPF18N20FT 200 Units V ±30 V -Continuous (TC = 25oC) 18 18* -Continuous (TC = 100oC) 10.8 10.8* ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 10 mJ dv/dt Peak Diode Recovery dv/dt - Pulsed (Note 1) 72* 324 (Note 3) A mJ 4.5 V/ns (TC = 25oC) 100 41 W - Derate above 25oC 0.83 0.33 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL 72 (Note 2) A -55 to +150 oC 300 oC FDP18N20F FDPF18N20FT Units *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 1.2 3.0 RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. A 1 oC/W www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET September 2009 Device Marking FDP18N20F Device FDP18N20F Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF18N20FT FDPF18N20FT TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ∆BVDSS / ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250µA, VGS = 0V, TJ = 25oC 200 - - V ID = 250µA, Referenced to 25oC - 0.2 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V - - 10 VDS = 160V, TC = 125oC - - 100 µA IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.12 0.14 Ω - 13.6 - S nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 9A gFS Forward Transconductance VDS = 20V, ID = 9A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 160V, ID = 18A VGS = 10V (Note 4, 5) - 885 1180 pF - 200 270 pF - 24 35 pF - 20 26 nC - 5 - nC - 9 - nC - 16 40 ns - 50 110 ns - 50 110 ns - 40 90 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 100V, ID = 18A RG = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 18 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 72 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 18A - - 1.5 V trr Reverse Recovery Time - 80 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 18A dIF/dt = 100A/µs - 240 - nC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2mH, IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP18N20F / FDPF18N20FT Rev. A 2 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 VGS = 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 50 o 10 150 C o 25 C *Notes: 1. 250µs Pulse Test 1 *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 2. TC = 25 C 1 0.1 1 VDS,Drain-Source Voltage[V] 10 4 5 6 VGS,Gate-Source Voltage[V] 0.25 100 IS, Reverse Drain Current [A] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature RDS(ON) [Ω], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.20 VGS = 10V VGS = 20V 0.15 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TJ = 25 C 2. 250µs Pulse Test 0.10 0 10 20 30 ID, Drain Current [A] 40 1 0.0 50 Figure 5. Capacitance Characteristics 2.0 10 1500 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz Ciss 1000 Coss 500 VDS = 40V VDS = 100V VDS = 160V 8 6 4 2 Crss 0 0.1 0.4 0.8 1.2 1.6 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 2000 Capacitances [pF] 7 *Note: ID = 18A 0 1 10 VDS, Drain-Source Voltage [V] FDP18N20F / FDPF18N20FT Rev. A 0 30 3 6 12 18 Qg, Total Gate Charge [nC] 24 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8-1. Maximum Safe Operating Area - FDP18N20F 100 20µs 100µs ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 10 1ms Operation in This Area is Limited by R DS(on) 1 DC *Notes: o 0.1 0.9 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -100 10ms o 2. TJ = 150 C 3. Single Pulse 0.01 -50 0 50 100 o 150 TJ, Junction Temperature [ C] 1 200 Figure 8-2. Maximum Safe Operating Area - FDPF18N20FT 10 100 VDS, Drain-Source Voltage [V] 600 Figure 9. Maximum Drain Current vs. Case Temperature 100 20 10µs 16 1ms Operation in This Area is Limited by R DS(on) 1 ID, Drain Current [A] ID, Drain Current [A] 100µs 10 10ms DC *Notes: o 0.1 1. TC = 25 C 8 4 o 2. TJ = 150 C 3. Single Pulse 0.01 1 12 0 25 600 10 100 VDS, Drain-Source Voltage [V] 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10-1. Transient Thermal Response Curve - FDP18N20F 2 Thermal Response [ZθJC] 1 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 *Notes: t2 o 0.01 -5 10 FDP18N20F / FDPF18N20FT Rev. A 1. ZθJC(t) = 1.2 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 2 10 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Typical Performance Characteristics (Continued) FDP18N20F / FDPF18N20FT N-Channel MOSFET Figure 10-2. Transient Thermal Response Curve - FDPF18N20FT Thermal Response [ZθJC] 2 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 t2 0.01 *Notes: o 0.01 -5 10 FDP18N20F / FDPF18N20FT Rev. A 1. ZθJC(t) = 3.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] 5 1 10 2 10 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP18N20F / FDPF18N20FT Rev. A 6 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + D U T V D S _ I S D L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as D U T V D D • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I S D d i/ d t ( D U T ) IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( D U T ) B o d y D io d e R e c o v e r y d v / d t V V S D D D B o d y D io d e F o r w a r d V o lt a g e D r o p FDP18N20F / FDPF18N20FT Rev. A 7 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Mechanical Dimensions TO-220 FDP18N20F / FDPF18N20FT Rev. A 8 www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET Package Dimensions TO-220F Potted * Front/Back Side Isolation Voltage : 4000V Dimensions in Millimeters FDP18N20F / FDPF18N20FT Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 10 FDP18N20F / FDPF18N20FT Rev. A www.fairchildsemi.com FDP18N20F / FDPF18N20FT N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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