MBRS2035CT thru MBRS20150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA TO-263AB (D2PAK) Case: TO-263AB (D2PAK) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.37 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) MBRS MBRS MBRS MBRS MBRS MBRS MBRS PARAMETER SYMBOL 2035 2045 2050 2060 2090 20100 20150 CT CT CT CT CT CT CT Unit Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 V Maximum RMS voltage VRMS 24 31 35 42 63 70 105 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 V Maximum average forward rectified current IF(AV) 20 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 20 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF=10A, TJ=25℃ IF=10A, TJ=125℃ IF=20A, TJ=25℃ IF=20A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ VF IR Voltage rate of change (Rated VR) dV/dt Typical thermal resistance RθJC Operating junction temperature range Storage temperature range 1 0.5 A 0.65 0.80 0.85 0.99 0.57 0.70 0.75 0.87 0.84 0.95 0.95 1.23 0.72 0.85 0.85 1.10 0.1 15 10 5 10000 1.5 V mA V/μs 2 O C/W TJ - 55 to +150 O C TSTG - 55 to +150 O C Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Document Number: D1307008 Version: J13 MBRS2035CT thru MBRS20150CT Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND QUALIFIED MBRS20xxCT (Note 1) PACKAGE PACKING D2PAK 800 / 13" Paper reel CODE RN Prefix "H" Suffix "G" C0 2 50 / Tube D PAK Note 1: "xx" defines voltage from 35V (MBRS2035CT) to 150V (MBRS20150CT) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. MBRS2060CT RN MBRS2060CT RN MBRS2060CT RNG MBRS2060CT RN MBRS2060CTHRN MBRS2060CT QUALIFIED PACKING CODE H GREEN COMPOUND DESCRIPTION CODE G Green compound RN AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD A CURRENT (A) 20 15 10 5 RESISTIVE OR INDUCTIVELOAD 0 50 60 70 80 90 100 110 120 CASE TEMPERATURE 130 140 150 PEAK FORWARD SURGE CURRENT (A) 25 FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 150 100 75 50 25 0 1 FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 INSTANTANEOUS REVERSE A CURRENT (mA) INSTANTANEOUS FORWARD A CURRENT (A) Pulse Width=300μs 1% Duty Cycle TJ=125℃ TJ=25℃ 1 MBRS2035CT-2045CT MBRS2050CT-2060CT MBRS2090CT-20150CT 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) 1 MBRS2035CT-2045CT MBRS2050CT-20150CT 10 TJ=125℃ 1 0.1 TJ=75℃ 0.01 0.01 0 100 NUMBER OF CYCLES AT 60 Hz 100 0.1 10 (oC) FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG 10 8.3ms Single Half Sine Wave JEDEC Method 125 1.1 1.2 TJ=25℃ 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: D1307008 Version: J13 MBRS2035CT thru MBRS20150CT Taiwan Semiconductor FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG 10 1000 MBRS2035CT-2045CT MBRS2050CT-20150CT 1 0.1 100 0.1 1 10 0.01 100 0.1 1 10 100 T-PULSE DURATION(s) REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.5 - 0.413 B 14.60 15.88 0.575 0.625 C 2.41 2.67 0.095 0.105 D 0.68 0.94 0.027 0.037 E 2.29 2.79 0.090 0.110 F 4.44 4.70 0.175 0.185 G 1.14 1.40 0.045 0.055 H 1.14 1.40 0.045 0.055 I 8.25 9.25 0.325 0.364 J 0.36 0.53 0.014 0.021 K 2.03 2.79 0.080 0.110 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 10.8 0.425 B 8.3 0.327 C 1.1 0.043 D 3.5 0.138 E 16.9 0.665 F 9.5 0.374 G 2.5 0.098 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: D1307008 Version: J13 MBRS2035CT thru MBRS20150CT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: D1307008 Version: J13