MC74VHC1GT125 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 5 5 W1 M G G M The MC74VHC1GT125 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The MC74VHC1GT125 requires the 3−state control input (OE) to be set High to place the output into the high impedance state. The device input is compatible with TTL−type input thresholds and the output has a full 5 V CMOS level output swing. The input protection circuitry on this device allows overvoltage tolerance on the input, allowing the device to be used as a logic−level translator from 3 V CMOS logic to 5 V CMOS Logic or from 1.8 V CMOS logic to 3 V CMOS Logic while operating at the high−voltage power supply. The MC74VHC1GT125 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1GT125 to be used to interface 5 V circuits to 3 V circuits. The output structures also provide protection when VCC = 0 V. These input and output structures help prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc. 1 SC−88A/SOT−353/SC−70 DF SUFFIX CASE 419A 1 5 W1 M G G 5 1 TSOP−5/SOT−23/SC−59 DT SUFFIX CASE 483 1 Features • • • • • • • • • W1 M G High Speed: tPD = 3.5 ns (Typ) at VCC = 5 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2 V CMOS−Compatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @Load = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. Power Down Protection Provided on Inputs and Outputs Balanced Propagation Delays PIN ASSIGNMENT Pin and Function Compatible with Other Standard Logic Families 1 Chip Complexity: FETs = 62; Equivalent Gates = 16 Pb−Free Packages are Available OE 1 5 VCC OE 2 IN A 3 GND 4 OUT Y 5 VCC IN A 2 GND 3 FUNCTION TABLE 4 OUT Y Figure 1. Pinout (Top View) OE OUT Y IN A February, 2007 − Rev. 12 OE Input Y Output L H X L L H L H Z ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Figure 2. Logic Symbol © Semiconductor Components Industries, LLC, 2007 A Input 1 Publication Order Number: MC74VHC1GT125/D MC74VHC1GT125 MAXIMUM RATINGS Symbol Characteristics Value Unit VCC DC Supply Voltage −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V −0.5 to 7.0 −0.5 to VCC + 0.5 V −20 mA +20 mA VOUT DC Output Voltage VCC = 0 High or Low State IIK Input Diode Current IOK Output Diode Current IOUT DC Output Current, per Pin +25 mA ICC DC Supply Current, VCC and GND +50 mA VOUT < GND; VOUT > VCC PD Power Dissipation in Still Air qJA Thermal Resistance TL Lead Temperature, 1 mm from Case for 10 s TJ Junction Temperature Under Bias Tstg Storage Temperature VESD ESD Withstand Voltage ILatchup Latchup Performance SC−88A, TSOP−5 200 mW SC−88A, TSOP−5 333 °C/W 260 °C +150 °C −65 to +150 °C > 2000 > 200 N/A V ±500 mA Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) Above VCC and Below GND at 125°C (Note 4) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD22−A114−A 2. Tested to EIA/JESD22−A115−A 3. Tested to JESD22−C101−A 4. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit VCC DC Supply Voltage 3.0 5.5 V VIN DC Input Voltage 0.0 5.5 V DC Output Voltage 0.0 VCC V Operating Temperature Range −55 +125 °C 0 20 ns/V VOUT TA tr , tf VCC = 5.0 V ± 0.5 V Input Rise and Fall Time 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80° C 117.8 TJ = 90 ° C 1,032,200 TJ = 100° C 80 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 110° C Time, Years TJ = 120° C Time, Hours TJ = 130° C Junction Temperature 5C NORMALIZED FAILURE RATE Device Junction Temperature versus Time to 0.1% Bond Failures 1 1 10 100 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 1000 MC74VHC1GT125 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ Î ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ Î ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ DC ELECTRICAL CHARACTERISTICS 1.4 2.0 2.0 Parameter VIH Minimum High−Level Input Voltage 3.0 4.5 5.5 VIL Maximum Low−Level Input Voltage 3.0 4.5 5.5 VOH Minimum High−Level Output Voltage VIN = VIH or VIL VOL Maximum Low−Level Output Voltage VIN = VIH or VIL Test Conditions Min Symbol TA ≤ 85°C TA = 25°C VCC (V) Typ Max Min Max 1.4 2.0 2.0 0.53 0.8 0.8 VIN = VIH or VIL IOH = − 50 mA 3.0 4.5 2.9 4.4 3.0 4.5 VIN = VIH or VIL IOH = − 4 mA IOH = − 8 mA 3.0 4.5 2.58 3.94 VIN = VIH or VIL IOL = 50 mA 3.0 4.5 VIN = VIH or VIL IOL = 4 mA IOL = 8 mA 0.0 0.0 −55 ≤ TA ≤ 125°C Min Max 1.4 2.0 2.0 0.53 0.8 0.8 V 0.53 0.8 0.8 2.9 4.4 2.9 4.4 2.48 3.80 2.34 3.66 Unit V V 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 V IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ± 0.10 ± 1.0 ± 1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 1.0 20 40 mA ICCT Quiescent Supply Current Input: VIN = 3.4 V Other Input: VCC or GND 5.5 1.35 1.50 1.65 mA IOPD Output Leakage Current VOUT = 5.5 V 0.0 0.5 5.0 10 mA Maximum 3−State Leakage Current VIN = VIH or VIL VOUT = VCC or GND 5.5 ± 0.25 ± 2.5 ± 2.5 mA Output Leakage Current VOUT = 5.5 V 0.0 0.5 5.0 10 mA IOZ IOPD AC ELECTRICAL CHARACTERISTICS Input tr = tf = 3.0 ns TA ≤ 85°C TA = 25°C Symbol tPLH, tPHL tPZL, tPZH tPLZ, tPHZ Typ Max Min Max 5.6 8.1 8.0 11.5 1.0 1.0 9.5 13.0 12.0 16.0 CL = 15pF CL = 50pF 3.8 5.3 5.5 7.5 1.0 1.0 6.5 8.5 8.5 10.5 VCC = 3.3 ± 0.3 V RL = RI = 500 W CL = 15pF CL = 50pF 5.4 7.9 8.0 11.5 1.0 1.0 9.5 13.0 11.5 15.0 VCC = 5.0 ± 0.5 V RL = RI = 500 W CL = 15pF CL = 50pF 3.6 5.1 5.1 7.1 1.0 1.0 6.0 8.0 7.5 9.5 VCC = 3.3 ± 0.3 V RL = RI = 500 W CL = 15pF CL = 50pF 6.5 8.0 9.7 13.2 1.0 1.0 11.5 15.0 14.5 18.0 VCC = 5.0 ± 0.5 V RL = RI = 500 W CL = 15pF CL = 50pF 4.8 7.0 6.8 8.8 1.0 1.0 8.0 10.0 10.0 12.0 10 10 10 Parameter Maximum Propagation Delay, A to Y (Figures 3 and 5.) Test Conditions VCC = 3.3 ± 0.3 V CL = 15pF CL = 50pF VCC = 5.0 ± 0.5 V Maximum Output Enable TIme,OE to Y (Figures 4 and 5) Maximum Output Disable Time,OE to Y (Figures 4 and 5) Min −55 ≤ TA ≤ 125°C Cin Maximum Input Capacitance 4 Cout Maximum Three−State Output Capacitance (Output in High Impedance State) 6 Min Max Unit ns ns ns pF pF Typical @ 25°C, VCC = 5.0 V 14 CPD Power Dissipation Capacitance (Note 5) pF 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per buffer). CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 MC74VHC1GT125 SWITCHING WAVEFORMS VCC 50% A OE tPHL tPLH VCC 50% GND tPZL GND 50% VCC Y 50% VCC tPZH Y tPHZ 50% VCC Y Figure 4. Switching Waveforms HIGH IMPEDANCE VOL + 0.3V VOH − 0.3V HIGH IMPEDANCE Figure 5. TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST tPLZ DEVICE UNDER TEST C L* *Includes all probe and jig capacitance OUTPUT 1 kW CL * CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. *Includes all probe and jig capacitance Figure 6. Test Circuit Figure 7. Test Circuit INPUT Figure 8. Input Equivalent Circuit ORDERING INFORMATION Device Package MC74VHC1GT125DF1 SC−88A / SOT−353 / SC−70 M74VHC1GT125DF1G SC−88A / SOT−353 / SC−70 (Pb−Free) MC74VHC1GT125DF2 SC−88A / SOT−353 / SC−70 M74VHC1GT125DF2G SC−88A / SOT−353 / SC−70 (Pb−Free) MC74VHC1GT125DT1 TSOP−5 / SOT−23 / SC−59 M74VHC1GT125DT1G TSOP−5 / SOT−23 / SC−59 (Pb−Free) Shipping † 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MC74VHC1GT125 PACKAGE DIMENSIONS SC−88A, SOT−353, SC−70 CASE 419A−02 ISSUE J A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) M B M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 mm Ǔ ǒinches MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MC74VHC1GT125 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE F NOTE 5 2X 0.10 T 2X 0.20 T D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. 5X 0.20 C A B 5 1 4 2 3 M B S K L DETAIL Z G A DIM A B C D G H J K L M S DETAIL Z J C 0.05 SEATING PLANE H T MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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