NCV8160 250 mA, Ultra-Low Noise and High PSRR LDO Regulator for RF and Analog Circuits www.onsemi.com The NCV8160 is a linear regulator capable of supplying 250 mA output current. Designed to meet the requirements of RF and analog circuits, the NCV8160 device provides low noise, high PSRR, low quiescent current, and very good load/line transients. The device is designed to work with a 1 mF input and a 1 mF output ceramic capacitor. It is available in XDFN−4 0.65P, 1 mm x 1 mm. MARKING DIAGRAM 1 Features • • • • • • • • • • • • XDFN4 CASE 711AJ Operating Input Voltage Range: 1.9 V to 5.5 V Available in Fixed Voltage Option: 1.8 V to 5.14 V ±2% Accuracy Over Temperature Ultra Low Quiescent Current Typ. 18 mA Standby Current: Typ. 0.1 mA Very Low Dropout: 90 mV at 250 mA Ultra High PSRR: Typ. 98 dB at 20 mA, f = 1 kHz Ultra Low Noise: 10 mVRMS Stable with a 1 mF Small Case Size Ceramic Capacitors Available in XDFN4 1 mm x 1 mm x 0.4 mm NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; Grade 1 AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant XX M 1 XX M = Specific Device Code = Date Code PIN CONNECTIONS IN EN 3 4 EPAD 1 2 OUT GND (Top View) ORDERING INFORMATION Typical Applications See detailed ordering, marking and shipping information on page 13 of this data sheet. • ADAS, Infotainment & Cluster, and Telematics • General Purpose Automotive & Industrial • Building & Factory Automation, Smart Meters VOUT VIN IN OUT NCV8160 CIN 1 mF Ceramic EN COUT 1 mF Ceramic ON OFF GND Figure 1. Typical Application Schematics © Semiconductor Components Industries, LLC, 2016 November, 2017 − Rev. 2 1 Publication Order Number: NCV8160/D NCV8160 IN EN ENABLE THERMAL LOGIC SHUTDOWN BANDGAP MOSFET REFERENCE INTEGRATED DRIVER WITH SOFT−START CURRENT LIMIT OUT * ACTIVE DISCHARGE Version A only EN GND Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. Pin Name Description 1 OUT Regulated output voltage. The output should be bypassed with small 1 mF ceramic capacitor. 2 GND Common ground connection 3 EN Chip enable: Applying VEN < 0.4 V disables the regulator, Pulling VEN > 1.2 V enables the LDO. 4 IN Input voltage supply pin EPAD EPAD Expose pad can be tied to ground plane for better power dissipation www.onsemi.com 2 NCV8160 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN −0.3 V to 6 V Output Voltage VOUT −0.3 to VIN + 0.3, max. 6 V V Chip Enable Input VCE −0.3 to VIN + 0.3, max. 6 V V Output Short Circuit Duration tSC unlimited s Operating Ambient Temperature Range TA −40 to +125 °C Input Voltage (Note 1) TJ 150 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Maximum Junction Temperature Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Machine Model tested per EIA/JESD22−A115 Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS Rating Thermal Characteristics, XDFN4 (Note 3) Thermal Resistance, Junction−to−Air Symbol Value Unit RqJA 198.1 °C/W 3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7 RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Input Voltage VIN 1.9 5.5 V Junction Temperature TJ −40 125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 3 NCV8160 ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. VEN = 1.2 V. Typical values are at TJ = +25°C (Note 4). Parameter Test Conditions Operating Input Voltage Output Voltage Accuracy −40°C ≤ TJ ≤ 125°C Symbol Min VIN VOUT Typ Max Unit 1.9 5.5 V −2 +2 % %/mA Line Regulation VOUT(NOM) + 1 V ≤ VIN ≤ 5.5 V LineReg 0.02 Load Regulation IOUT = 1 mA to 250 mA LoadReg 0.001 0.005 VOUT(NOM) = 1.8 V 190 250 VOUT(NOM) = 2.5 V 120 175 105 160 VOUT(NOM) = 3.0 V 100 155 VOUT(NOM) = 3.3 V 90 145 Dropout Voltage (Note 5) VOUT(NOM) = 2.8 V IOUT = 250 mA VDO mV Output Current Limit VOUT = 90% VOUT(NOM) ICL Short Circuit Current VOUT = 0 V ISC 690 Quiescent Current IOUT = 0 mA IQ 18 23 mA Shutdown Current VEN ≤ 0.4 V, VIN = 4.8 V IDIS 0.01 1 mA EN Input Voltage “H” VENH EN Input Voltage “L” VENL VEN = 4.8 V IEN EN Pin Threshold Voltage EN Pull Down Current Turn−On Time Power Supply Rejection Ratio Output Voltage Noise Thermal Shutdown Threshold Active Output Discharge Resistance Line Transient (Note 6) IOUT = 20 mA 700 mA 1.2 0.4 0.2 COUT = 1 mF, From assertion of VEN to VOUT = 95% VOUT(NOM) 0.5 V mA 120 ms f = 100 Hz f = 1 kHz f = 10 kHz f = 100 kHz PSRR 91 98 82 48 dB IOUT = 1 mA IOUT = 250 mA VN 14 10 mVRMS Temperature rising TSDH 160 °C Temperature falling TSDL 140 °C VEN < 0.4 V, Version A only RDIS 280 W f = 10 Hz to 100 kHz VIN = (VOUT(NOM) + 1 V) to (VOUT(NOM) + 1.6 V) in 30 ms, IOUT = 1 mA VIN = (VOUT(NOM) + 1.6 V) to (VOUT(NOM) + 1 V) in 30 ms, IOUT = 1 mA Load Transient (Note 6) 250 %/V IOUT = 1 mA to 200 mA in 10 ms IOUT = 200 mA to 1mA in 10 ms −1 TranLINE mV +1 −40 TranLOAD +40 mV Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. 5. Dropout voltage is characterized when VOUT falls 100 mV below VOUT(NOM). 6. Guaranteed by design. www.onsemi.com 4 NCV8160 TYPICAL CHARACTERISTICS 3.33 1.820 1.815 VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) IOUT = 10 mA 1.810 1.805 IOUT = 250 mA 1.800 1.795 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 1.790 1.785 1.780 −40 −20 0 20 40 60 80 100 120 IOUT = 10 mA 3.30 3.29 IOUT = 250 mA 3.28 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 3.27 3.26 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Output Voltage vs. Temperature − VOUT = 1.8 V − XDFN Package Figure 4. Output Voltage vs. Temperature − VOUT = 3.3 V − XDFN Package REGLINE, LINE REGULATION (%/V) 0.010 0.009 0.008 0.007 0.006 0.005 0.004 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 0.003 0.002 0.001 0 −40 −20 0 20 40 60 80 100 120 140 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 0.001 0 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Line Regulation vs. Temperature − VOUT = 1.8 V Figure 6. Line Regulation vs. Temperature − VOUT = 3.3 V 0.0020 0.0018 0.0016 0.0014 0.0012 0.0010 0.0008 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 0.0006 0.0004 0.0002 0 −40 −20 0 20 40 60 80 100 120 REGLOAD, LOAD REGULATION (%/mA) REGLINE, LINE REGULATION (%/V) 3.31 3.25 −40 −20 140 0.010 REGLOAD, LOAD REGULATION (%/mA) 3.32 0.0020 0.0018 0.0016 0.0014 0.0012 0.0010 0.0008 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.0006 0.0004 0.0002 0 140 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Load Regulation vs. Temperature − VOUT = 1.8 V Figure 8. Load Regulation vs. Temperature − VOUT = 3.3 V www.onsemi.com 5 NCV8160 1.50 1.50 1.35 1.35 IGND, GROUND CURRENT (mA) IGND, GROUND CURRENT (mA) TYPICAL CHARACTERISTICS 1.20 TJ = 125°C 1.05 TJ = 25°C 0.90 0.75 0.60 TJ = −40°C 0.45 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 0.30 0.15 0 0 25 50 75 TJ = 25°C 0.90 0.75 0.60 TJ = −40°C 0.45 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.30 0.15 0 0 25 50 100 125 150 175 200 75 225 250 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 9. Ground Current vs. Load Current − VOUT = 1.8 V Figure 10. Ground Current vs. Load Current − VOUT = 3.3 V 150 VDROP, DROPOUT VOLTAGE (mV) VDROP, DROPOUT VOLTAGE (mV) TJ = 125°C 1.05 100 125 150 175 200 225 250 250 225 200 TJ = 125°C 175 TJ = 25°C 150 125 100 TJ = −40°C 75 VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 50 25 0 0 25 50 75 100 125 150 175 200 135 120 105 90 TJ = 125°C 75 60 TJ = 25°C 45 TJ = −40°C 30 VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 15 0 0 225 250 25 50 75 100 125 150 175 200 225 250 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 11. Dropout Voltage vs. Load Current − VOUT = 1.8 V Figure 12. Dropout Voltage vs. Load Current − VOUT = 3.3 V 250 150 VDROP, DROPOUT VOLTAGE (mV) VDROP, DROPOUT VOLTAGE (mV) 1.20 225 200 175 IOUT = 250 mA 150 VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 125 100 75 IOUT = 0 mA 50 25 0 −40 −20 0 20 40 60 80 100 120 140 135 120 IOUT = 250 mA 105 90 75 60 IOUT = 0 mA 45 VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 30 15 0 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 13. Dropout Voltage vs. Temperature− VOUT = 1.8 V Figure 14. Dropout Voltage vs. Temperature− VOUT = 3.3 V www.onsemi.com 6 NCV8160 TYPICAL CHARACTERISTICS ISC, SHORT CIRCUIT CURRENT (mA) 750 730 720 710 700 690 680 670 660 650 −40 −20 VEN, ENABLE VOLTAGE THRESHOLD (V) VIN = 4.3 V VOUT = 90% VOUT(nom) CIN = 1 mF COUT = 1 mF 0 20 40 60 80 100 120 140 690 680 670 660 650 640 620 610 600 −40 −20 0.50 0.45 0.8 OFF −> ON 0.7 0.6 ON −> OFF 0.5 0.4 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.3 0.2 0.1 0 −40 −20 0 20 40 60 80 100 120 140 40 60 80 100 120 140 0.40 0.35 0.30 0.25 0.20 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.15 0.10 0.05 0 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 17. Enable Threshold Voltage vs. Temperature Figure 18. Enable Current Temperature RDIS, DISCHARGE RESISTIVITY (W) 70 20 Figure 16. Short Circuit Current vs. Temperature 0.9 90 0 Figure 15. Current Limit vs. Temperature 1.0 80 VIN = 4.3 V VOUT = 0 V (Short) CIN = 1 mF COUT = 1 mF 630 TJ, JUNCTION TEMPERATURE (°C) 100 IDIS, DISABLE CURRENT (nA) 700 TJ, JUNCTION TEMPERATURE (°C) IEN, ENABLE PIN CURRENT (mA) ICL, CURRENT LIMIT (mA) 740 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 60 50 40 30 20 10 0 −40 −20 0 20 40 60 80 100 120 140 300 290 280 270 260 250 240 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 230 220 210 200 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 19. Disable Current vs. Temperature Figure 20. Discharge Resistivity vs. Temperature www.onsemi.com 7 NCV8160 TYPICAL CHARACTERISTICS OUTPUT VOLTAGE NOISE (nV/√Hz) 10,000 IOUT = 250 mA 1000 IOUT = 10 mA RMS Output Noise (mV) IOUT = 1 mA 100 10 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF IOUT 10 Hz − 100 kHz 100 Hz − 100 kHz 1 mA 14.62 14.10 10 mA 11.12 10.48 250 mA 10.37 9.82 1 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 21. Output Voltage Noise Spectral Density − VOUT = 1.8 V 120 120 IOUT = 10 mA 100 RR, RIPPLE REJECTION (dB) VIN = 2.5 V VOUT = 1.8 V COUT = 1 mF 80 60 IOUT = 20 mA 40 20 IOUT = 100 mA IOUT = 250 mA 0 VIN = 3.6 V VOUT = 3.3 V COUT = 1 mF 100 80 60 IOUT = 20 mA 40 IOUT = 100 mA 20 IOUT = 250 mA 0 0.01 0.1 1 10 100 1k 10k 0.01 0.1 1 10 100 1k FREQUENCY (kHz) FREQUENCY (kHz) Figure 22. Power Supply Rejection Ratio, VOUT = 1.8 V Figure 23. Power Supply Rejection Ratio, VOUT = 3.3 V 100 Unstable Operation 10 ESR (W) RR, RIPPLE REJECTION (dB) IOUT = 10 mA 1 Stable Operation 0.1 0 50 100 150 200 IOUT, OUTPUT CURRENT (mA) Figure 24. Stability vs. ESR www.onsemi.com 8 250 300 10k NCV8160 VIN = 2.8 V, VOUT = 1.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 200 mA/div IINPUT VOUT 500 mV/div 200 mA/div VEN VEN IINPUT 1 V/div 1 V/div 500 mV/div TYPICAL CHARACTERISTICS VIN = 2.8 V, VOUT = 1.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VOUT 100 ms/div 100 ms/div Figure 25. Enable Turn−on Response − COUT = 1 mF, IOUT = 10 mA Figure 26. Enable Turn−on Response − COUT = 1 mF, IOUT = 250 mA 500 mV/div 10 mV/div 2.3 V VIN VOUT VOUT = 1.8 V, IOUT = 10 mA CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 3.8 V VIN VOUT VOUT = 3.3 V, IOUT = 10 mA CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 20 ms/div 20 ms/div Figure 27. Line Transient Response − VOUT = 1.8 V Figure 28. Line Transient Response − VOUT = 3.3 V VIN 1 V/div 10 mV/div 500 mV/div 4.8 V 3.3 V VOUT VOUT = 2.8 V, CIN = 1 mF (MLCC), IOUT = 10 mA, COUT = 1 mF (MLCC) 4 ms/div Figure 29. Turn−on/off − Slow Rising VIN www.onsemi.com 9 NCV8160 100 mA/div tRISE = 1 ms IOUT 50 mV/div 50 mV/div 100 mA/div TYPICAL CHARACTERISTICS VOUT IOUT tFALL = 1 ms VOUT VIN = 2.8 V, VOUT = 1.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VIN = 2.8 V, VOUT = 1.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 4 ms/div 20 ms/div Figure 30. Load Transient Response − 1 mA to 250 mA − VOUT = 1.8 V Figure 31. Load Transient Response − 250 mA to 1 mA − VOUT = 1.8 V VOUT VIN = 4.3 V, VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VOUT VIN = 4.3 V, VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 20 ms/div Figure 32. Load Transient Response − 1 mA to 250 mA − VOUT = 3.3 V Figure 33. Load Transient Response − 250 mA to 1 mA − VOUT = 3.3 V TSD Cycling 500 mV/div 500 mA/div tFALL = 1 ms 4 ms/div Short Circuit Event Overheating 1 V/div 100 mA/div tRISE = 1 ms 50 mV/div IOUT VEN IOUT VOUT VOUT Thermal Shutdown VIN = 5.5 V, VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) COUT = 4.7 mF 1 V/div 50 mV/div 100 mA/div IOUT VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF (MLCC) COUT = 1 mF 10 ms/div 400 ms/div Figure 34. Short Circuit and Thermal Shutdown Figure 35. Enable Turn−off www.onsemi.com 10 NCV8160 APPLICATIONS INFORMATION General transient response or high frequency PSRR. It is not recommended to use tantalum capacitors on the output due to their large ESR. The equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. The NCV8160 is an ultra−low noise 250 mA low dropout regulator designed to meet the requirements of RF applications and high performance analog circuits. The NCV8160 device provides very high PSRR and excellent dynamic response. In connection with low quiescent current this device is well suitable for battery powered application such as cell phones, tablets and other. The NCV8160 is fully protected in case of current overload, output short circuit and overheating. Enable Operation Input capacitor connected as close as possible is necessary for ensure device stability. The X7R or X5R capacitor should be used for reliable performance over temperature range. The value of the input capacitor should be 1 mF or greater to ensure the best dynamic performance. This capacitor will provide a low impedance path for unwanted AC signals or noise modulated onto constant input voltage. There is no requirement for the ESR of the input capacitor but it is recommended to use ceramic capacitors for their low ESR and ESL. A good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. The NCV8160 uses the EN pin to enable/disable its device and to deactivate/activate the active discharge function. If the EN pin voltage is <0.4 V the device is guaranteed to be disabled. The pass transistor is turned−off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND through a 280 W resistor. In the disable state the device consumes as low as typ. 10 nA from the VIN. If the EN pin voltage >1.2 V the device is guaranteed to be enabled. The NCV8160 regulates the output voltage and the active discharge transistor is turned−off. The EN pin has internal pull−down current source with typ. value of 200 nA which assures that the device is turned−off when the EN pin is not connected. In the case where the EN function isn’t required the EN should be tied directly to IN. Output Decoupling (COUT) Output Current Limit The NCV8160 requires an output capacitor connected as close as possible to the output pin of the regulator. The recommended capacitor value is 1 mF and X7R or X5R dielectric due to its low capacitance variations over the specified temperature range. The NCV8160 is designed to remain stable with minimum effective capacitance of 0.7 mF to account for changes with temperature, DC bias and package size. Especially for small package size capacitors such as 0201 the effective capacitance drops rapidly with the applied DC bias. Please refer Figure 36. Output Current is internally limited within the IC to a typical 700 mA. The NCP60 will source this amount of current measured with a voltage drops on the 90% of the nominal VOUT. If the Output Voltage is directly shorted to ground (VOUT = 0 V), the short circuit protection will limit the output current to 690 mA (typ). The current limit and short circuit protection will work properly over whole temperature range and also input voltage range. There is no limitation for the short circuit duration. Input Capacitor Selection (CIN) Thermal Shutdown When the die temperature exceeds the Thermal Shutdown threshold (TSD * 160°C typical), Thermal Shutdown event is detected and the device is disabled. The IC will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (TSDU − 140°C typical). Once the IC temperature falls below the 140°C the LDO is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. Power Dissipation As power dissipated in the NCV8160 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature Figure 36. Capacity vs DC Bias Voltage There is no requirement for the minimum value of Equivalent Series Resistance (ESR) for the COUT but the maximum value of ESR should be less than 2 W. Larger output capacitors and lower ESR could improve the load www.onsemi.com 11 NCV8160 rise for the part. For reliable operation, junction temperature should be limited to +125°C. The maximum power dissipation the NCV8160 can handle is given by: P D [ V IN @ I GND ) I OUTǒV IN * V OUTǓ (eq. 1) q JA 220 1.0 qJA, 1 oz Cu 210 0.9 200 0.8 qJA, 2 oz Cu 190 0.7 PD(MAX), TA = 25°C, 2 oz Cu PD(MAX), TA = 25°C, 1 oz Cu 180 0.6 170 0.5 160 0.4 150 0 100 (eq. 2) 200 300 400 PCB COPPER AREA (mm2) 500 600 PD(MAX), MAXIMUM POWER DISSIPATION (W) qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W) P D(MAX) + ƪ125oC * T Aƫ The power dissipated by the NCV8160 for given application conditions can be calculated from the following equations: 0.3 700 Figure 37. qJA and PD (MAX) vs. Copper Area Reverse Current Turn−On Time The PMOS pass transistor has an inherent body diode which will be forward biased in the case that VOUT > VIN. Due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. The turn−on time is defined as the time period from EN assertion to the point in which VOUT will reach 98% of its nominal value. This time is dependent on various application conditions such as VOUT(NOM), COUT, TA. Power Supply Rejection Ratio To obtain good transient performance and good regulation characteristics place CIN and COUT capacitors close to the device pins and make the PCB traces wide. In order to minimize the solution size, use 0402 or 0201 capacitors with appropriate capacity. Larger copper area connected to the pins will also improve the device thermal resistance. The actual power dissipation can be calculated from the equation above (Equation 2). Expose pad can be tied to the GND pin for improvement power dissipation and lower device temperature. PCB Layout Recommendations The NCV8160 features very high Power Supply Rejection ratio. If desired the PSRR at higher frequencies in the range 100 kHz – 10 MHz can be tuned by the selection of COUT capacitor and proper PCB layout. www.onsemi.com 12 NCV8160 ORDERING INFORMATION Device Nominal Output Voltage Description NCV8160AMX180TBG 1.8 V DF NCV8160AMX250TBG 2.5 V DG NCV8160AMX280TBG 2.8 V DH NCV8160AMX290TBG 2.9 V NCV8160AMX300TBG 3.0 V DK NCV8160AMX330TBG 3.3 V DA NCV8160AMX500TBG 5.0 V DW NCV8160BMX180TBG 1.8 V EF NCV8160BMX250TBG 2.5 V EG NCV8160BMX280TBG 2.8 V NCV8160BMX300TBG 3.0 V NCV8160BMX330TBG 3.3 V EA NCV8160BMX500TBG 5.0 V EW 250 mA, Active Discharge Marking Package Shipping† XDFN4 (Pb-Free) 3000 / Tape & Reel D4 EH 250 mA, Non-Active Discharge EK †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 13 NCV8160 PACKAGE DIMENSIONS XDFN4 1.0x1.0, 0.65P CASE 711AJ ISSUE A PIN ONE REFERENCE 0.05 C 2X 4X A B D ÉÉ ÉÉ E 4X L2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. b2 DETAIL A DIM A A1 A3 b b2 D D2 E e L L2 0.05 C 2X TOP VIEW (A3) 0.05 C A 0.05 C NOTE 4 A1 SIDE VIEW C SEATING PLANE RECOMMENDED MOUNTING FOOTPRINT* e e/2 DETAIL A 1 4X 2 MILLIMETERS MIN MAX 0.33 0.43 0.00 0.05 0.10 REF 0.15 0.25 0.02 0.12 1.00 BSC 0.43 0.53 1.00 BSC 0.65 BSC 0.20 0.30 0.07 0.17 L 2X 0.65 PITCH 0.52 PACKAGE OUTLINE D2 45 5 4X D2 4 4X 3 4X b 0.05 BOTTOM VIEW M C A B 0.39 0.11 4X 4X 0.24 NOTE 3 1.20 0.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Bluetooth is a registered trademark of Bluetooth SIG. ZigBee is a registered trademark of ZigBee Alliance. 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